Atherosclerosis

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Atherosclerosis (also known as arteriosclerotic vascular disease or ASVD) is a condition in which an artery wall thickens as a result of the accumulation of fatty materials such as cholesterol. (Wikipedia.org)






Conferences related to Atherosclerosis

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2016 38th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invited sessions of the latest significant findings and developments in all the major fields of biomedical engineering. Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2012 25th IEEE International Symposium on Computer-Based Medical Systems (CBMS)

The conference will provide an international forum for discussing the latest developments in the field of computational medicine, biomedical informatics and related fields.


2012 IEEE-EMBS International Conference on Biomedical and Health Informatics (BHI)

BHI devotes to an inter-disciplinary research area intersecting engineering, information technology and computer science with biology, medicine and health. The scope includes but not limited to innovative technologies and applications on acquisition, transmission, processing, storage, retrieval (P-STAR) of biomedical and health information, bio-inspired informatics and informatics in biological systems.


2011 International Conference on Remote Sensing, Environment and Transportation Engineering (RSETE)

Remote sensing and application Energy, Environmental, sustainable development Environment Pollution and Protection Transportation Engineering


2010 15th Conference on Microwave Techniques (COMITE 2010)

Microwave techniques, antennas, optoelectronics, computational electromagnetics.



Periodicals related to Atherosclerosis

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Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Information Technology in Biomedicine, IEEE Transactions on

Telemedicine, teleradiology, telepathology, telemonitoring, telediagnostics, 3D animations in health care, health information networks, clinical information systems, virtual reality applications in medicine, broadband technologies, and global information infrastructure design for health care.


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Most published Xplore authors for Atherosclerosis

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Xplore Articles related to Atherosclerosis

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Interfacial adhesion of copper-low k interconnects

Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), 2001

Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to ...


A 800MT/s Multiprocessor Bus Interface With Strobe Centering Architecture

2006 IEEE Asian Solid-State Circuits Conference, 2006

A 65 nm 1.2 V GTL bus interface achieves 800 MT/s 6.4 GB/S data rate in a 3-load multi-processor (MP) environment. To enable a 20% increase in data rate compared to previous design, it utilizes a staged driver, DLL controlled predriver, Tco compensation, data/strobe time shifter, high gain differential amplifier as well as advanced process, voltage and temperature (PVT) compensation ...


PVD TiN hardmask for copper metallization

2007 International Symposium on Semiconductor Manufacturing, 2007

With shrinking geometries and adoption of lower k dielectrics and thinner barriers to minimize device RC delay, there is a need for advanced patterning schemes. Hardmask technology is on demand as the photoresist(PR) films used in semiconductor fabrication need to be thinner to etch sub-45 nm devices. Hardmask films provide high etch selectivity to low-k dielectrics and photoresist, serve as ...


Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105), 1998

The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found ...


Resistance Increase in Metal Nano-wires

2006 International Symposium on VLSI Technology, Systems, and Applications, 2006

As the dimension of copper interconnect scales into the nano-meter regime, the resistivity of copper rapidly increases, primarily due to an electron scattering effect and other dimensional dependent factors, such as film quality. In this paper, we attempt to use a simplified parameter, dimension impact factor (DIF), which includes both surface and grain boundary scattering, to characterize the dimensional dependency ...


More Xplore Articles

Educational Resources on Atherosclerosis

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Atherosclerosis"

IEEE-USA E-Books

  • Interfacial adhesion of copper-low k interconnects

    Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to low k dielectric films than CVD barriers. Surface treatments of the dielectric film before barrier deposition are found to strongly modulate CVD barrier to spin-on polymer adhesion.

  • A 800MT/s Multiprocessor Bus Interface With Strobe Centering Architecture

    A 65 nm 1.2 V GTL bus interface achieves 800 MT/s 6.4 GB/S data rate in a 3-load multi-processor (MP) environment. To enable a 20% increase in data rate compared to previous design, it utilizes a staged driver, DLL controlled predriver, Tco compensation, data/strobe time shifter, high gain differential amplifier as well as advanced process, voltage and temperature (PVT) compensation design.

  • PVD TiN hardmask for copper metallization

    With shrinking geometries and adoption of lower k dielectrics and thinner barriers to minimize device RC delay, there is a need for advanced patterning schemes. Hardmask technology is on demand as the photoresist(PR) films used in semiconductor fabrication need to be thinner to etch sub-45 nm devices. Hardmask films provide high etch selectivity to low-k dielectrics and photoresist, serve as an anti-reflective coating, allowing partial via etch approach and eliminating ULK damage caused by the resist ash strip process. We have optimized PVD TiN process through hardware, process modifications to meet all the requirements of hardmask technology. We also present preliminary etch rate data and via profiles demonstrating the benefits of TiN hardmask. Further work to characterize adhesion and electrical performance is underway.

  • Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

    The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TIN layers.

  • Resistance Increase in Metal Nano-wires

    As the dimension of copper interconnect scales into the nano-meter regime, the resistivity of copper rapidly increases, primarily due to an electron scattering effect and other dimensional dependent factors, such as film quality. In this paper, we attempt to use a simplified parameter, dimension impact factor (DIF), which includes both surface and grain boundary scattering, to characterize the dimensional dependency of metal resistivity. Among the metal studied, silver has the largest DIF while aluminum has the lowest value. The chief reason is that aluminum has a short electron mean free path (MFP), meaning that it tends to be less affected by dimensional scaling, and has a higher electron specular ratio. In addition to the factor of MFP, resistivity can be affected by other dimensional dependent factors, such as film quality

  • Development of diagnostic system for atherosclerosis based on intrinsic fluorescence using multispectral imaging

    Composition of atherosclerotic arterial walls is rich in lipids such as cholesterol; unlike normal arterial walls. In this study, we aimed to utilize this difference to diagnose atherosclerosis via multispectral imaging, which allows for identification of fluorescence originating from the substance in the arterial wall. The inner surface of extracted arteries (rabbit abdominal aorta, human coronary aorta) was illuminated by an excitation light and multispectral fluorescence images were obtained. The fluorescence spectra in atherosclerotic sites were shown to be different from those in normal sites. A ratio of fluorescence intensity at a wavelength of two significant differences was then calculated for each pixel and ratio images were reconstructed. As a result, we succeeded in “disease mapping”, by which atherosclerotic sites can be discriminated from normal sites. The differences in fluorescence spectra may be attributed to the differences in fluorophores contained in the intima/media of the artery.

  • Peripheral vascular ARFI imaging: phantom and clinical results

    None

  • In-line copper process control using picosecond ultrasonics

    We have made noncontact thickness measurements using picosecond ultrasonics for a series of electrochemically deposited (ECD) copper films, and for a series of PVD copper films deposited on thin films of Ta. For the PVD Cu-Ta bilayers, the thicknesses of both films were obtained simultaneously within the same measurement. The measurement area was less than 30 /spl mu/m in diameter. The measurements were found to be in close numerical agreement with TEM measurements. The results also show that the thickness measurements for all films are highly linear as a function of deposition time, and highly repeatable.

  • Low-loss contact pad with tuned impedance for operation at millimeter wave frequencies

    In this paper an on-chip pad structure with minimized losses and matched impedance is presented. The pads use a metal ground-shield thereunder to minimize the influence from a lossy silicon substrate. A shunt transmission line stub is used to resonate the pad capacitance, thereby providing a matched impedance into a 50 /spl Omega/ on-chip transmission line. A second-tier calibration technique was used to extract their 2-port S-parameter characteristic. The measured performance is compared with simulations of standard pad structures up to 65 GHz.

  • A 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer

    Design of a 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer is proposed. Gate oxide protection was implemented without active voltage degradation, which reduces static and dynamic current levels and improves noise immunity for the low voltage circuit of this kind. Fast removal of stored charge further improves gate oxide protection and circuit recovery from overvoltage condition. A circuit was designed and simulated in 0.25 /spl mu/m technology.



Standards related to Atherosclerosis

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