Conferences related to Ballistic magnetoresistance

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 IEEE Workshop on Microelectronics and Electron Devices (WMED)

WMED 2019 will provide a forum for reviewing and discussing all aspects of micro- and nanoelectronicsincluding processing, electrical characterization, design, and new devicetechnologies. This workshop will consist of invited talks, contributed papers, and a postersession throughout the day. Faculty, students, and researchers in industry are encouraged tocontribute presentations on either completed research or work-in-progress.

  • 2018 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    WMED 2018 will provide a forum for reviewing and discussing all aspects of micro- and nano-electronics including processing, electrical characterization, design, and new device technologies. This workshop will consist of invited talks, contributed papers, and a poster session throughout the day. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work-in-progress.

  • 2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    WMED 2017 will provide a forum for reviewing and discussing all aspects of micro- and nano-electronics including processing, electrical characterization, design, and new device technologies. This workshop will consist of invited talks, contributed papers, and a poster session throughout the day. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work-in-progres

  • 2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The Fourteenth Annual IEEE Workshop on Microelectronics and Electron Devices (WMED) will provide a forum for reviewing and discussing all aspects of micro- and nano-electronics including processing, electrical characterization, design, and new device technologies. This workshop will consist of invited and contributed talks, papers and a poster session throughout the day. Faculty, students, and researchers in industry are encouraged to contribute papers on either completed research or work in progress.

  • 2015 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers as well as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work in progress.

  • 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED)

    The Annual IEEE Workshop on Microelectronics and Electron Devices will provide aforum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization,design and new device technologies. This symposium will consist of both invited and contributed talks and papers aswell as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentationson either completed research or work in progress.

  • 2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The Eleventh Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics, including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers, as well as a poster session. Faculty, students and industry researchers are encouraged to contribute presentations on either completed research or work in progress.

  • 2012 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The Tenth Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers as well as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work in progress.

  • 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The ninth Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers as well as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work -in-progress.

  • 2010 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The eighth annual IEEE Workshop on Microelectronics and Electron devices will provide a forum for reviewing and discussing all aspects of microlectronics including processing, electrical characterization, design, and new device technologies. The workshop will consist of invited and contributed talks and papers as well as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentations on completed work or work in progress

  • 2009 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The seventh Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers as well as a poster session. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work-in-progress.

  • 2008 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The sixth Annual IEEE Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies. This symposium will consist of both invited and contributed talks and papers as well as a poster session throughout the afternoon. Faculty, students, and researchers in industry are encouraged to contribute presentations on either completed research or work-in-progress

  • 2007 IEEE Workshop on Microelectronics and Electron Devices (WMED)

    The Fifth Annual Workshop on Microelectronics and Electron Devices will provide a forum for reviewing and discussing all aspects of microelectronics including processing, electrical characterization, design and new device technologies.

  • 2006 IEEE Workshop on Microelectronics and Electron Devices (WMED)

  • 2005 IEEE Workshop on Microelectronics and Electron Devices (WMED)

  • 2004 IEEE Workshop on Microelectronics and Electron Devices (WMED)

  • 2002 IEEE Workshop on Microelectronics and Electron Devices (WMED)


2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

The fifth joint EUROSOI-ULIS event will be hosted by IMEP-LaHC in Grenoble, France. The focus of the sessions is on advanced nanoscale devices, including SOI technology.Papers in the following areas are solicited:-Physical mechanisms and innovative SOI-like devices.-New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.-Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.-New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc. Advanced test structures and characterization techniques, reliability and variability assessment techniques for new materials and novel devices.

  • 2018 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The fourth joint EUROSOI-ULIS event will be hosted by the University of Granada in Granada, Spain. The focus of the sessions is on advanced nanoscale devices, including SOI technology. Papers in the following areas are solicited:Physical mechanisms and innovative SOI-like devices.New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.

  • 2017 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    EUROSOI-ULIS is a European Conference that resulted from the merging in 2015 of the two sister Conferences: EUROSOI and ULIS. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers related to the More Moore, More than Moore and Beyond CMOS research fields (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2016 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    In order to further increase audience and scientific impact, the two sister conferences ULIS and EUROSOI have decided to merge in 2015 and the first joint EUROSOI-ULIS event was a sucess. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The future landscape of the micro-nano-electronics will essentially contain extremely miniaturized fully depleted devices such as planar SOI or narrow FinFETs and nanowires. These aspects were covered in both ULIS and EuroSOI conferences, leading to significant overlap. In order to further increase audience and scientific impact, the two sister conferences have decided to merge in 2015. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2014 15th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices for More Moore (CMOS, Memories), More than Moore (Nanosensing, Energy Harvesting, RF, ...) and Beyond-CMOS (Nanowires, CNT, Graphene, Tunnel FET, ...) applications.

  • 2013 14th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)

    ULIS is an annual conference that regroups the European research community working on advanced silicon devices and nanodevices. It has been held annually since 2000. The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2009 10th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2008 9th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices for switches, memory and novel applications such as sensors and bioelectronics.


2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

Covers all electronic materials and devices fields that involve nanotechnology

  • 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)

    This conference serves as a perfect platform on which scientists and engineers can present and highlight some of the key advances in the research topics relevant to nanoscience and nanotechnology.

  • 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE NMDC 2016 aims to foster communication between physicists, chemists, microbiologists and engineers from academics and industry, interested in nanodevices and nanostructured materials, advanced preparation techniques, new material properties, standards and safety issues of nanotechnology, in computer simulations and theoretical work. Interdisciplinary exchange between scientists and contributions from industrial researchers will stimulate gather knowledge and help inspire a new perspective in industrial applications on this exciting area.

  • 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2015 is the 10th Nanotechnology Materials and Devices Conference. Published papers in the conference will be indexed at IEEExplore. A contest for the best paper award will be held and awards will be given at the end of the conference. Authors of the best papers of each track will be invited to submit their extended article version to: IEEE Transactions on Nanobioscience, IEEE Nanotechnology Magazine, and IEEE Transaction on Nanotechnology.

  • 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2014 wants to be a forum of discussion about nanotechnology, with a special focus on materials and devices. Topics:-Graphene and carbon nanotubes based materials and devices-Materials and devices for nanoelectronics-Materials and devices for energy and environmental applications-Nanostructures for future generation solar cells-Ion beam synthesis and modification of nanostructures-Advanced characterization of nanomaterials and nanostructures-Modeling and simulation of nanomaterials, structures, and devices-Metamaterials and plasmonic devices-Photonic materials and devices-Organic semiconductor materials, devices and applications-Nanostructures of oxide semiconductor materials-III-V semiconductors nanomaterials-Nanostructures for water purification-Nanomaterials and devices for biomedical applications-Standards and safety issues of nanotechnology-Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

  • 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)

  • 2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

    Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


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Periodicals related to Ballistic magnetoresistance

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Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Most published Xplore authors for Ballistic magnetoresistance

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Xplore Articles related to Ballistic magnetoresistance

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Theory of domain wall and resistivity in nanoscale magnets and contacts

2000 IEEE International Magnetics Conference (INTERMAG), 2000

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Influence of ballistic and pocket effects on electron mobility in Si MOSFETs

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 2005

Room temperature magnetoresistance of nanometer bulk Si n-type MOSFETs was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 nm to 1000 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic motion ...


Magnetization Reversal of Micron-Scale Cobalt Structures With a Nanoconstriction

IEEE Transactions on Magnetics, 2007

The magnetization reversal behavior of 20 nm thick cobalt microstructures with a nanoconstriction of variable size has been studied using magnetoresistance measurements and micromagnetic simulations. Depending on the direction of the applied field relative to the current, reversible and irreversible switching events are observed, which can be explained using micromagnetic simulations. Anisotropic magnetoresistance (AMR) is the dominant resistance contribution in ...


On the Apparent Mobility in Nanometric n-MOSFETs

IEEE Electron Device Letters, 2007

This letter investigates the definition and determination of mobility in nanometric metal-oxide-semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano- MOSFETs, even for very small V<sub>DS</sub>, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to ...


First-Principles Calculation of atomic-sized Ni nanocontacts

2006 IEEE International Magnetics Conference (INTERMAG), 2006

We calculated the electronic structures of Ni nanocontact by using the first- principles band calculation, and investigated the dependence of the electronic structure on the nanocontact shape. It is expected that the large spin polarization at the center of nanocontact can be obtained in the large contact length. The small contact length can easily switch from parallel state to anti-parallel ...


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Educational Resources on Ballistic magnetoresistance

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IEEE-USA E-Books

  • Theory of domain wall and resistivity in nanoscale magnets and contacts

    None

  • Influence of ballistic and pocket effects on electron mobility in Si MOSFETs

    Room temperature magnetoresistance of nanometer bulk Si n-type MOSFETs was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 nm to 1000 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic motion and the pocket effect and that for the strong inversion the influence of both limitations on the mobility is comparable.

  • Magnetization Reversal of Micron-Scale Cobalt Structures With a Nanoconstriction

    The magnetization reversal behavior of 20 nm thick cobalt microstructures with a nanoconstriction of variable size has been studied using magnetoresistance measurements and micromagnetic simulations. Depending on the direction of the applied field relative to the current, reversible and irreversible switching events are observed, which can be explained using micromagnetic simulations. Anisotropic magnetoresistance (AMR) is the dominant resistance contribution in the systems measured. The simulations show that instead of one sharp domain wall, which may lead to ballistic magnetoresistance (BMR), two domain walls on each side of the nanocontact precede the complete reversal

  • On the Apparent Mobility in Nanometric n-MOSFETs

    This letter investigates the definition and determination of mobility in nanometric metal-oxide-semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano- MOSFETs, even for very small V<sub>DS</sub>, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.

  • First-Principles Calculation of atomic-sized Ni nanocontacts

    We calculated the electronic structures of Ni nanocontact by using the first- principles band calculation, and investigated the dependence of the electronic structure on the nanocontact shape. It is expected that the large spin polarization at the center of nanocontact can be obtained in the large contact length. The small contact length can easily switch from parallel state to anti-parallel state in spin configuration of two ferromagnetic electrodes.

  • Transport of Carbon Nanotubes Coupled to Ferromagnetic Electrodes

    We calculate the magnetoresistance of the single-walled carbon nanotube biasing by using ferromagnetic electrodes in different alignments of magnetic polarization. In large polarization of the ferromagnetic electrodes, the magnetoresistance is significant and easily reaches saturation at small bias, which suggests spintronic devices are possible by using carbon nanotubes.

  • Spin filter behaviour of atomic NiO chains in Ni nanocontacts

    Contrary to the antiferromagnetic and insulating character of bulk NiO, we show by means of ab initio quantum transport calculations that short atomic NiO chains suspended between Ni nanocontacts can become strongly spin- polarized conductors. They could thus serve as nanoscopic spin filters. Here we study the stability of our results against geometrical distortions of the atomic chain and the nanocontact.

  • Temperature and bias voltage dependence of Co-Fe-AlO/sub x/-Py-AlO/sub x/-Co-Fe double-barrier junctions

    Exchange-biased magnetic tunnel junctions with single and double barriers are investigated with respect to the temperature and bias voltage dependence of the tunneling magnetoresistance. The single-barrier junctions show a tunneling magnetoresistance ratio of up to 49% at room temperature (72% at 10 K), the double-barrier systems up to 38% (57%), respectively, with three clearly separated magnetic states. The temperature and bias voltage dependence of the double-barrier junctions is explained as a serial connection of two single junctions. Theoretical studies of the tunneling magnetoresistance exhibit that the magnetoresistance ratio can be enhanced by ballistic electrons in double- barrier junctions, but only if the potential of the middle electrode can be shifted.

  • Magnetoresistance and Current-driven Resistance Change Measurements in NiFe films with a Nanoconstriction

    Ballistic magnetoresistance (MR) measurements with large magnetic field were performed using sputtered NiFe film as the MR layer. The origin of MR is deduced from current-driven resistance change measurements. The nanoscale point contact (PC) was formed at the junction of the pinned area, which is covered with a CoPt hard magnetic film, and the free area. Results show that the resistance increased (decreased) with positive (negative) sense current. This asymmetry might be due to the domain wall (DW) state, which was pinned at or depinned from the PC by a spin transfer effect.

  • Magnetoresistance of ferromagnetic point junctions from tunneling to direct contact regimes

    The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from 10/sup 8/ /spl Omega/-10/sup 3/ /spl Omega/. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 k/spl Omega/ to either the diffusive regime or the tunneling regime, as supported by independent theories on spin-dependent transport. The suppression of magnetoresistance with incorporation of a 35-nm-thick Au barrier was observed, as well as the dependence of magnetoresistance on the relative orientations of the electrodes.



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