Conferences related to Bipolar transistor circuits

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2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


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Periodicals related to Bipolar transistor circuits

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Bipolar transistor circuits

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Xplore Articles related to Bipolar transistor circuits

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A 150-V multiple up-drain VDMOS, CMOS, and bipolar process in 'direct-bonded' silicon on insulator on silicon

IEEE Electron Device Letters, 1992

Silicon on insulator on silicon (SOIS) has been produced with silicon direct bonding (SDB). Within a silicon film of 15- mu m thickness, islands with ubiquitous oxide isolation have been formed for the simultaneous integration of 150-V power VDMOS transistors, CMOS circuits in a channelless sea-of-gates array with 2- mu m gates, and bipolar transistors. The up-drain VDMOS transistors with ...


Chip-level electro-thermal simulation of bipolar transistor circuits

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1994

This paper presents accurate electro-thermal circuit-level modeling of both self and mutual heating for bipolar transistor IC devices. In addition, thermal transmission line network models are used to characterize the important mutual heating among devices on a chip. The models have been implemented in a new electro-thermal analog circuit simulator, Sframe, with robust convergence due to parameter continuation methodology.


Transistor equivalent circuits

Proceedings of the IEEE, 1998

This paper surveys the history of the electric-circuit representation of the transistor over the past fifty years. During the first two decades after the transistor was announced in 1948, primary emphasis was on small-signal equivalent circuits, which could be used for linear-circuit analysis and design. In addition, parameters of many of these equivalent circuits for the bipolar junction transistor, which ...


A Highly Efficient p-n Junction Model for use in Harmonic-Balance Simulation

1989 19th European Microwave Conference, 1989

The paper proposes a new numerical formulation of the classic p-n junction model which is particularly suitable for harmonic-balance applications. Making use of a state-variable approach and of a non conventional choice of the state variable, the numerical difficulties related to the highly nonlinear junction equations are completely waived, and a well-conditioned, fast-converging Newton iteration is obtained in all cases.


Integrated injection logic-present and future

IEEE Journal of Solid-State Circuits, 1974

Integrated injection logic (I/SUP 2/L) or merged transistor logic (MTL) incorporating lateral p-n-p transistors as current sources and multicollector n-p-n transistors as invertors, are discussed. Speed-power products of 0.13 pJ per gate have been measured in a five-stage closed-loop invertor chain, and packing densities of 400 gates/mm/SUP 2/ have been achieved. A layout comparison with MOS logic is presented. A ...


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Educational Resources on Bipolar transistor circuits

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IEEE.tv Videos

Bell Labs: The Transistor Milestone Event
Interview with Marcel J.M. Pelgrom - The Pelgrom Law: IEEE Gustav Robert Kirchhoff Award Recipient
Micro-Apps 2013: Integrated Electro-Thermal Design of a SiGe PA
IEEE Custom Integrated Circuits Conference
Multi-Level Optical Weights in Integrated Circuits - IEEE Rebooting Computing 2017
Alice Wang - SSCS Chip Chat Podcast, Episode 6
Physical Restraints on Quantum Circuits - IEEE Rebooting Computing 2017
ISSCC 2012 - Awards Ceremony
Molecular Cellular Networks: A Non von Neumann Architecture for Molecular Electronics - Craig Lent: 2016 International Conference on Rebooting Computing
On the Characterization of Thermal Coupling Resistance in a Current Mirror: RFIC Industry Showcase 2016
2011 IEEE Jun-ichi Nishizawa Medal - Bernard J. Lechner, T. Peter Brody and Fang-Chen Luo
IMS 2011 Microapps - Memory Effects in RF Circuits: Definition, Manifestations and Fast, Accurate Simulation
IMS 2011 Microapps - STAN Tool: A New Method for Linear and Nonlinear Stability Analysis of Microwave Circuits
Starting Your Own Company - The Challenges and the Rewards
2017 IEEE Donald O. Pederson Award in Solid-State Circuits: Takao Nishitani and John S. Thompson
THz Transistors: Present and Future
Shantanu Chakrabartty - SSCS Chip Chat Podcast, Episode 5
Multi-Level Optimization for Large Fan-In Optical Logic Circuits - Takumi Egawa - ICRC 2018
William S. Carter and Stephen Trimberger - 2018 Donald O. Pederson Award in Solid-State Circuits at IEEE ISSCC
ISSCC 2012 - David Perlmutter Plenary

IEEE-USA E-Books

  • A 150-V multiple up-drain VDMOS, CMOS, and bipolar process in 'direct-bonded' silicon on insulator on silicon

    Silicon on insulator on silicon (SOIS) has been produced with silicon direct bonding (SDB). Within a silicon film of 15- mu m thickness, islands with ubiquitous oxide isolation have been formed for the simultaneous integration of 150-V power VDMOS transistors, CMOS circuits in a channelless sea-of-gates array with 2- mu m gates, and bipolar transistors. The up-drain VDMOS transistors with 2- Omega -mm/sup 2/ specific on-resistance allow multiple isolated outputs, so high-voltage push-pull drivers can be fabricated in a single chip. The bipolar transistors are comparable to those of a 60-V standard process with vertical n-p-n and lateral p-n-p current gains of 80.<<ETX>>

  • Chip-level electro-thermal simulation of bipolar transistor circuits

    This paper presents accurate electro-thermal circuit-level modeling of both self and mutual heating for bipolar transistor IC devices. In addition, thermal transmission line network models are used to characterize the important mutual heating among devices on a chip. The models have been implemented in a new electro-thermal analog circuit simulator, Sframe, with robust convergence due to parameter continuation methodology.

  • Transistor equivalent circuits

    This paper surveys the history of the electric-circuit representation of the transistor over the past fifty years. During the first two decades after the transistor was announced in 1948, primary emphasis was on small-signal equivalent circuits, which could be used for linear-circuit analysis and design. In addition, parameters of many of these equivalent circuits for the bipolar junction transistor, which are described, were related to the physical construction of the device. Approximately two-thirds of the paper is devoted to this period, when the writer personally contributed to this effort. By the beginning of the third decade, transistor circuits had became more complex, and circuit analysis was carried out with the help of digital computers. Interest then shifted away from small-signal equivalent circuits to "models" for computer-aided circuit design (CACD). This transition, including the models used in the widely used CACD program SPICE, is described. MOS transistors are treated only briefly; by the time MOS transistors became commercially viable devices, emphasis then also had shifted to "models" for CACD. In conclusion, the writer notes that there is still hope for us aficionados of small-signal equivalent circuits; new types of transistors are still being characterized in this manner.

  • A Highly Efficient p-n Junction Model for use in Harmonic-Balance Simulation

    The paper proposes a new numerical formulation of the classic p-n junction model which is particularly suitable for harmonic-balance applications. Making use of a state-variable approach and of a non conventional choice of the state variable, the numerical difficulties related to the highly nonlinear junction equations are completely waived, and a well-conditioned, fast-converging Newton iteration is obtained in all cases.

  • Integrated injection logic-present and future

    Integrated injection logic (I/SUP 2/L) or merged transistor logic (MTL) incorporating lateral p-n-p transistors as current sources and multicollector n-p-n transistors as invertors, are discussed. Speed-power products of 0.13 pJ per gate have been measured in a five-stage closed-loop invertor chain, and packing densities of 400 gates/mm/SUP 2/ have been achieved. A layout comparison with MOS logic is presented. A possible way of producing faster circuits is proposed.

  • Development of a silicon BJT integrated circuit chip performance simulator

    For integrated circuit chips based on the silicon bipolar junction transistor (BJT) technology, computer efficient models of the various chip performance indicators have been developed and a user-friendly computer program called "BCHIPSIM" suitable for the simulation of the chip performance indicators for a microprocessor or a gate-array chip has been developed. In addition to predicting the various chip performance indicators such as its maximum clock frequency, power consumption, computational capacity, power efficiency, fabrication yield, functional throughput rate and the size of the chip with the given technology parameters, the program has also been used to simulate the dependences the various chip performance indicators on the technology feature sizes in the range 0.1-5 /spl mu/m and the chip integration levels in the range 100-1,000,000 logic gates on the chip.<<ETX>>

  • Boron-doped emitters for high-performance vertical pnp transistors

    The fabrication of pnp transistors is described, and their characteristics are studied as a function of the emitter process. Ideal polysilicon-emitter and LTE-emitter devices have been obtained, and the temperature dependences of the base saturation and collector saturation permit an understanding of the differences in their characteristics. For the polysilicon emitter, it appears that relatively low annealing temperatures are adequate to achieve ideal device characteristics and low emitter resistance. This will allow maximum flexibility for the integration of the vertical pnp into a complementary bipolar process and shallower emitter-base junctions (for the poly-emitter devices) than attempted here. The feasibility of the epitaxial emitter has also been demonstrated in a double-polysilicon self-aligned transistor, offering the possibility of achieving a very thin, ion-implanted base. Some performance tradeoffs may have to be made to improve the gain of the device.<<ETX>>

  • THz Bipolar Transistor Circuits: Technical Feasibility, Technology Development, Integrated Circuit Results

    We examine the feasibility of developing bipolar transistors with current-gain and power-gain cutoff frequencies of 1-3 THz. High bandwidths are obtained by scaling; the critical limits to such scaling are the requirements that the current density increase in proportion to the square of bandwidth and that the metal-semiconductor contact resistivities vary as the inverse square of device bandwidth. Transistors with 755 GHz f<sub>max</sub> and 324 GHz amplifiers have been demonstrated. Contacts with resistivity sufficient for the 64 nm scaling generation (1 THz f<sub>tau</sub>2 THz f<sub>max</sub>) have been developed.

  • The water-cooled heavy-current power supply units

    Heavy-current power supply units with 400 A and 800 A load currents and 2 V and 5 V output voltages are presented. The general power consumption of a computer is 100 kW. Both in computer assemblies and in power supply units, water cooling is used. During computer power supply development, the following principal problems are solved: minimal power supply components and assembly losses for optimal efficiency; intensive heating elements cooling; power supply unit parallel operation; and the use of "hot" redundancy to improve power supply reliability.

  • An analysis of self-heating and collector-current-collapse on RF power transistor

    This paper examines the influences of the self-heating behavior of Silicon-on- Insulator (SOI) MOSFET transistors and multi-finger Hetero-junction Bipolar Transistors (HBT) on a range of primitive Radio Frequency Integrated Circuits (RFIC) cells. In addition to the more well-known self-heating effect (SHE), Collector Current Collapse effects (CCCE) are examined. Particular emphasis is given to the impact of these effects on drain current mismatch due to localized temperature differences. Simulations and analyses are presented for a simple cascode amplifier stage. Anomalies due to self-heating are also clearly visible in the small-signal characteristics of the cascode stage. The paper demonstrates how circuit-level simulations can be used to predict undesirable nonisothermal operating condition during the design stage.



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