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The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.
Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies
The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.
IECON is focusing on industrial and manufacturing theory and applications of electronics, controls, communications, instrumentation and computational intelligence.
APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
1994 Proceedings of Canadian Conference on Electrical and Computer Engineering, 1994
In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain experimental results over the entire Smith chart. Fine and repeatable variation of the loading is achieved. High power transistors with low impedances are readily measured. The system presently covers the ...
29th European Solid-State Device Research Conference, 1999
IEEE Transactions on Electron Devices, 2002
A large-signal modeling of power heterojunction bipolar transistor (HBT) is demonstrated for an accurate simulation of self-heating and ambient temperature effects and nonlinear behaviors such as output power, gain expansion, intermodulation distortion (IMD), and adjacent channel power ratio (ACPR). The physical relationship between the device current and the rate of change in the built-in potential with respect to the device ...
IEE Colloquium on Power Semiconductor Devices, 1994
The heterojunction bipolar transistors (HBTs) based on AlGaAs/GaAs are the most wildly investigated and have shown good RF performance. However, this structure has many well known disadvantages. An alternative to this structure is to use the aluminium-free InGaP/GaAs HBTs which are lattice matched to GaAs substrates. We have used DLTS measurements, on the emitter/base junction of InGaP/GaAs and AlGaAs/GaAs N-p-n ...
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992
The authors present measurements of InP/InGaAs double-heterojunction bipolar transistors (DHBTs) where the design has been guided by simulation results from energy-band and small-signal models. Both the energy-band model and small-signal model commence with the material parameters, process parameters, and device geometry. The energy-band model is used to investigate the insertion of layers to reduce the electron-blocking effect at the base- ...
THz Transistors: Present and Future
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
Interview with Marcel J.M. Pelgrom - The Pelgrom Law: IEEE Gustav Robert Kirchhoff Award Recipient
Transistors for THz Systems
BSIM Spice Model Enables FinFET and UTB IC Design
Neuromorphic Chips - Kwabena Boahen: 2016 International Conference on Rebooting Computing
Silicon THz: an Opportunity for Innovation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Micro-Apps 2013: Integrated Electro-Thermal Design of a SiGe PA
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
IMS 2014: A 600 GHz Low-Noise Amplifier Module
CASS Lecture "Deep-Subthreshold Operation of ADPLLs, Transmitters and ADCs"
The Evolution and Future of RF Silicon Technologies for THz Applications
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
A CMOS Qubit: Quantum & Probabilistic Computing - Mark Sanquer at INC 2019
ITRI: Technology Advances in Flexible Displays and Substrates
In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain experimental results over the entire Smith chart. Fine and repeatable variation of the loading is achieved. High power transistors with low impedances are readily measured. The system presently covers the 2-18 GHz and 26.4-40 GHz frequency bands.<<ETX>>
A large-signal modeling of power heterojunction bipolar transistor (HBT) is demonstrated for an accurate simulation of self-heating and ambient temperature effects and nonlinear behaviors such as output power, gain expansion, intermodulation distortion (IMD), and adjacent channel power ratio (ACPR). The physical relationship between the device current and the rate of change in the built-in potential with respect to the device temperature has been utilized for a fully electrothermal modeling. To enable an immediate use for a circuit design, the model extraction was done for in-situ output-stage device from two-stage power amplifier (PA) circuit. In each parameter extraction step, measurement data obtained under a consistent environment, which are current-voltage (I-V) at various temperatures and small-signal S-parameters under various bias conditions, have been carefully examined and utilized to relate the meaning of each parameter to the physical principle of the device. Measurements and simulations are compared for the verification of the model under dc condition at various temperatures.
The heterojunction bipolar transistors (HBTs) based on AlGaAs/GaAs are the most wildly investigated and have shown good RF performance. However, this structure has many well known disadvantages. An alternative to this structure is to use the aluminium-free InGaP/GaAs HBTs which are lattice matched to GaAs substrates. We have used DLTS measurements, on the emitter/base junction of InGaP/GaAs and AlGaAs/GaAs N-p-n HBTs, to compare the presence of as-grown defect levels by MOCVD in these two heterojunctions. It is shown that although the DX-centre, with an apparent activation energy of 0.42 eV, is present in the AlGaAs emitter region no electron trapping defect levels are observed in the InGaP emitter. In addition, the temperature dependencies of current gains are investigated for both AlGaAs/GaAs and InGaP/GaAs HBTs, fabricated with identical processing steps. Measured results show that base bulk recombination current plays an important role in maintaining the current gain at high temperature. Theoretical modelling of current gains with temperature on these two HBTs was also presented which explains well the experimental data.<<ETX>>
The authors present measurements of InP/InGaAs double-heterojunction bipolar transistors (DHBTs) where the design has been guided by simulation results from energy-band and small-signal models. Both the energy-band model and small-signal model commence with the material parameters, process parameters, and device geometry. The energy-band model is used to investigate the insertion of layers to reduce the electron-blocking effect at the base- collector conduction-band discontinuity. The small-signal model is used to optimize the layer structure to provide a high unity-gain bandwidth, f/sub T/. The fabricated devices range in size from 60 mu m*60 mu m to 9 mu m*9 mu m (emitter size). The 9- mu m*9- mu m devices exhibit a small-signal current- gain in excess of 400 and a maximum f/sub T/ of 39 GHz. The measured high- frequency performance agrees closely with the simulation results of the small- signal model.<<ETX>>
Al/sub 0.11/Ga/sub 0.89/As was used in the base, next to the GaInP collector of a DHBT, to eliminate the conduction band spike. The DHBT's demonstrated high breakdown voltages, BV/sub CEO/ and BV/sub CBO/ of 44.5 V and 54.5 V (gain/spl ap/20), respectively, for a 1-/spl mu/m-thick collector doped to 2/spl times/10/sup 16/ cm/sup -3/ with no voltage dependence of the current gain. Magneto-transport measurements were made on the AlGaAs bases and indicated limitations on the maximum practical base doping due to the inferior minority electron mobility and lifetime when compared with equivalently doped GaAs. Grading in the base from Al/sub 0.11/Ga/sub 0.89/As at the collector to Al/sub 0.21/Ga/sub 0.79/As at the emitter introduced a quasielectric field in the base, reduced the base transit time by a factor of /spl sim/2.5, and improved the gain over ungraded devices with the same average Al concentration.
An historial reriew of heterojunction device technology is presented.
The dc characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBTs) are studied under high-energy (/spl sim/1 MeV) electron irradiation up to a fluence of 14.8/spl times/10/sup 15/ electrons/cm/sup 2/. The devices show an increase in common-emitter current gain (h/sub fe/) at low levels of dose (<10/sup 15/ electrons/cm/sup 2/) and a gradual decrease in h/sub fe/ and an increase in output conductance for higher doses. The decrease in h/sub fe/ is as much as /spl sim/80% at low base currents (/spl sim/10 /spl mu/A) after a cumulative dose of 14.8/spl times/10/sup 15/ electrons/cm/sup 2/. The observed degradation effects in collector current-voltage (I-V) characteristics are studied quantitatively using a simple SPICE-like device model. The overall decrease in h/sub fe/ is attributed to increased recombination in the emitter-base junction region caused by radiation-induced defects. The defects introduced in the collector-base junction region are believed to be responsible for the observed increase in the output conductance.
Temperature-dependent collector breakdown behavior in InP HBTs with an InGaAs/InP composite collector has been investigated. We have found that, in the layer structures studied, the device shows a positive temperature dependence of common-emitter breakdown at temperatures lower than 330 K due to the negative temperature dependence of impact ionization coefficient in InP. However, at higher temperatures, the contribution of InGaAs layer becomes important and a negative temperature dependence of collector breakdown is observed.
We have calculated the threshold current density of the Kirk effect in bipolar transistors with a nonuniform doping concentration in the collector. The threshold current is enhanced by more than 50% compared to the uniform doping case if the dopant profile is weighed toward the base and if velocity overshoot is small. Significant velocity overshoot restores the threshold value obtained with uniform doping.
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