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IEEE Global Communications Conference (GLOBECOM) is one of the IEEE Communications Society’s two flagship conferences dedicated to driving innovation in nearly every aspect of communications. Each year, more than 2,900 scientific researchers and their management submit proposals for program sessions to be held at the annual conference. After extensive peer review, the best of the proposals are selected for the conference program, which includes technical papers, tutorials, workshops and industry sessions designed specifically to advance technologies, systems and infrastructure that are continuing to reshape the world and provide all users with access to an unprecedented spectrum of high-speed, seamless and cost-effective global telecommunications services.
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
Ferroelectric materials and applications
The Annual IEEE PES General Meeting will bring together over 2900 attendees for technical sessions, administrative sessions, super sessions, poster sessions, student programs, awards ceremonies, committee meetings, tutorials and more
ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
1991 Symposium on VLSI Technology, 1991
 49th Annual Device Research Conference Digest, 1991
IEEE Electron Device Letters, 1985
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2000
This paper presents the results of an investigation into the turn-off performance of planar and trench gate IGBTs under conditions of soft and hard switching topologies. Voltage and current waveforms, power losses, electric field distributions, and carrier behaviors inside the chips are studied through simulation and experiment. It is noted that the trench gate IGBT has advantage over the planar ...
IEEE Journal of Quantum Electronics, 2005
A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes (MM- PINPD) grown on GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 /spl mu/m are 13 pA, 0.6 A/W, 3.4/spl times/10/sup ...
IMS 2014:Active 600GHz Frequency Multiplier-by-Six S-MMICs for Submillimeter-Wave Generation
Kiana Pitch: Fog Tank - Fog World Congress
Materials Challenges for Next-Generation, High-Density Magnetic Recording - Kazuhiro Hono: IEEE Magnetics Distinguished Lecture 2016
ICASSP 2012 Plenary-Dr. Chin-Hui Lee
Achieving Low Latency Mobile Edge Cloud Services - Dipankar Raychaudhuri - IEEE Sarnoff Symposium, 2019
5G Millimeter Wave Cellular Systems - Sundeep Rangan - IEEE Sarnoff Symposium, 2019
A Highly-Efficient 138?170GHz SiGe HBT Frequency Doubler for PowerConstrained Applications: RFIC Interactive Forum
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
Superconductive Energy-Efficient Computing - ASC-2014 Plenary-series - 6 of 13 - Wednesday 2014/8/13
This paper presents the results of an investigation into the turn-off performance of planar and trench gate IGBTs under conditions of soft and hard switching topologies. Voltage and current waveforms, power losses, electric field distributions, and carrier behaviors inside the chips are studied through simulation and experiment. It is noted that the trench gate IGBT has advantage over the planar gate IGBT for hard switching application. On the other hand, the turn-off loss of the planar gate IGBT under soft switching application is slightly lower than that of the trench gate IGBT.
A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes (MM- PINPD) grown on GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 /spl mu/m are 13 pA, 0.6 A/W, 3.4/spl times/10/sup -15/ W/Hz/sup 1/2/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
CoFe-/Cu-based multilayers with two different types of a buffer layer, NiFeCr, and Ta/NiFeCr have been produced by magnetron sputtering. The crystal structure of the superlattice layers has been studied. A correlation between the features of the microstructure and the magnitude of the magnetoresistance has been found. Superlattices with giant magnetoresistive effect reaching up to 83% have been fabricated.
A special PLD-setup for large area deposition of homogeneous YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) thin films and buffer layers as large as 7 cm/spl times/20 cm is presented. A new concept for homogeneous large area substrate heating and the influence of the deposition rate on the film properties is discussed. YBCO is deposited on r-plane sapphire substrates (10 cm/spl times/10 cm) as well as on smaller (2 inch O, 1 cm/spl times/1 cm) SrTiO/sub 3/, MgO, LaAlO/sub 3/, and on yttria stabilized ZrO/sub 2/ substrates distributed over the deposition area. The homogeneity of the deposited YBCO films concerning structural and electrical properties is investigated by XRD, RBS/channeling, and spatially resolved inductive measurements of T/sub c/ and J/sub c/. The variation of J/sub c/ on a 2 inch MgO wafer is less than /spl plusmn/9%, the mean c-axis length is 11.681 /spl Aring/, the FWHMs of the  rocking curves are 0.40 and the channeling minimum yield /spl chi//sub min/ varies between 3.7% and 4.9% over the 2 inch wafer. The J/sub c/ values of YBCO on 7 cm x 20 cm in situ buffered sapphire substrates are (2.0/spl plusmn/0.4 MA/cm/sup 2/) at T=77 K and B=0 T.
We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an InxGar1-xSb graded buffer layer.
MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO3ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO3on SiC, ABO3on SiC with a SiO2buffer (10 nm and 40 nm) and ABO3on SiC with an Al2O3buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al2O3buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm2in the accumulation region indicating a dielectric constant of ~120.
The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure and morphology of YSZ buffer layers. It is shown, that III-V films received on YSZ substrates and buffer layers have single crystalline structure, good morphology and high electrophysical and photoluminescent properties. The use of the two-layer buffer in comparison with the single YSZ buffer improves adhesion of III-V films and raises its structural and electric homogeneity.
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