Conferences related to CNTFETs

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2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 Design, Automation & Test in Europe Conference & Exhibition (DATE)

The DATE conference addresses all aspects of research into technologies for electronic andembedded system engineering. It covers the design process, test, and automation tools forelectronics ranging from integrated circuits to distributed embedded systems. This includes bothhardware and embedded software design issues. The conference scope also includes theelaboration of design requirements and new architectures for challenging application fields suchas telecoms, wireless communications, multimedia, healthcare, smart energy and automotivesystems. Companies also present innovative industrial designs to foster the feedback fromrealworld design to research. DATE also hosts a number of special sessions, events within themain technical programme such as panels, hot-topic sessions, tutorials and workshopstechnical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback fromrealworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback fromrealworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic andembedded system engineering. It covers the design process, test, and automation tools forelectronics ranging from integrated circuits to distributed embedded systems. This includes bothhardware and embedded software design issues. The conference scope also includes theelaboration of design requirements and new architectures for challenging application fields suchas telecoms, wireless communications, multimedia, healthcare, smart energy and automotivesystems. Companies also present innovative industrial designs to foster the feedback from realworlddesign to research. DATE also hosts a number of special sessions, events within the maintechnical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops

  • 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback from realworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback from real-world design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops

  • 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE 2013)

    DATE is the complete event for the European electronic and test community. A leading world conference and exhibition, DATE unites 2,000 professionals with approximately 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE 2012)

    DATE is the complete event for the European electronic system and test community. A leading world conference and exhibition, DATE unites 2,000 professionals with some 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2011 Design, Automation & Test in Europe Conference & Exhibition (DATE 2011)

    DATE is the complete event for the European electronic system and test community. A world leading conference and exhibition, DATE unites 2,000 professionals with some 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010)

    All aspects of research into technologies for electronic and (embedded) systems engineering. It covers the design process, test, and tools for design automation of electronic products ranging from integrated circuits to distributed large-scale systems.

  • 2009 Design, Automation & Test in Europe Conference & Exhibition (DATE 2009)

    The Design, Automation, and Test in Europe (DATE) conference is the world's premier conference dedicated to electronics system design & test. The technical programme features: Four distinctive and integrated themes, covering all aspects of systems design and engineering. Two special days are focusing on SoC Development Strategies and Multicore Applications.

  • 2008 Design, Automation & Test in Europe Conference & Exhibition (DATE 2008)

    The 11th DATE conference and exhibition is the main European event bringing together designers and design automation users, researchers and vendors, as well as specialists in the hardware and software design, test and manufacturing of electronic circuits and systems. It puts strong emphasis on ICs/SoCs, reconfigurable hardware and embedded systems, including embedded software. The five-day event consists of a conference with plenary invited papers, regular papers, panels, hot-topic sessions, tutorials.

  • 2007 Design, Automation & Test in Europe Conference & Exhibition (DATE 2007)

    DATE is the main European event bringing together designers and design automation users, researchers and vendors, as well as specialists in the hardware and software design, test and manufacturing of electronic circuits and systems. It puts strong emphasis on both ICs/SoCs, reconfigurable hardware and embedded systems, including embedded software.

  • 2006 Design, Automation & Test in Europe Conference & Exhibition (DATE 2006)

  • 2005 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2004 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2003 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2002 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2001 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2000 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 1999 Design, Automation & Test in Europe Conference & Exhibition (DATE)


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Periodicals related to CNTFETs

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Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to CNTFETs

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Design and electrical simulation of on-chip neural learning based on nanocomponents

Electronics Letters, 2008

None


Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

IEEE Transactions on Nanotechnology, 2003

The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube field-effect transistors (FETs) are computed via a self-consistent solution to the two-dimensional potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of- equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and ...


A systems approach to computing in beyond CMOS fabrics

2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC), 2017

Emerging applications require computing platforms to extract task-relevant information from increasingly large amounts of data. These requirements place stringent constraints on energy efficiency, throughput, latency, and for certain data types, security and privacy of computing platforms. Traditionally, silicon CMOS scaling has been relied upon to meet these energy and delay constraints. However, the energy and delay benefits achievable via scaling ...


Modeling and performance analysis of ballistic carbon nanotube field effect transistor (CNTFET)

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010

In this paper, we have proposed the compact modeling of ballistic CNTFET and the performance analysis of the developed model using various characteristics. The carbon nanotube transistors (CNTFET) are currently considered and most promising component to replace the generation of MOSFET transistor, especially in order to surpass the short channel effects in the component. For this new generation of transistor ...


Coherent transport of hole in p type semiconductive carbon nanotube

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC., 2004

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance ...


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Educational Resources on CNTFETs

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IEEE.tv Videos

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IEEE-USA E-Books

  • Design and electrical simulation of on-chip neural learning based on nanocomponents

    None

  • Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

    The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube field-effect transistors (FETs) are computed via a self-consistent solution to the two-dimensional potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of- equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain contacts to the tube, respectively. The interesting phenomena of bipolar conduction in a FET, and of drain-induced barrier thinning (DIBT) are observed. These phenomena are shown to add a breakdown-like feature to the drain I-V characteristic. It is also shown that a more traditional, saturating-type characteristic can be obtained by workfunction engineering of the source and drain contacts.

  • A systems approach to computing in beyond CMOS fabrics

    Emerging applications require computing platforms to extract task-relevant information from increasingly large amounts of data. These requirements place stringent constraints on energy efficiency, throughput, latency, and for certain data types, security and privacy of computing platforms. Traditionally, silicon CMOS scaling has been relied upon to meet these energy and delay constraints. However, the energy and delay benefits achievable via scaling are diminishing. Increased vulnerability to various sources of variations (e.g., process, voltage) further exacerbates these energy and speed challenges.

  • Modeling and performance analysis of ballistic carbon nanotube field effect transistor (CNTFET)

    In this paper, we have proposed the compact modeling of ballistic CNTFET and the performance analysis of the developed model using various characteristics. The carbon nanotube transistors (CNTFET) are currently considered and most promising component to replace the generation of MOSFET transistor, especially in order to surpass the short channel effects in the component. For this new generation of transistor (CNTFET) with very short channel, the majority of models describing electrical conduction based on the process of ballistic transport. We propose design-oriented compact models for ballistic CNTFET. We are interested more particularly to the drain current and the quantum capacitance as a function of the gate voltage (VGS), for various values of the nanotube diameter and the oxide thickness. These models have been simulated and the results that are obtained were in excellent agreement with the theoretical calculations.

  • Coherent transport of hole in p type semiconductive carbon nanotube

    In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

  • A two port network model of CNT-FET for RF characterization

    In this paper, we propose a two-port network model of a single walled (SW) carbon nanotube field effect transistor (CNT-FET) which includes contacts for analyzing S-parameter measurement results. The radio frequency (RF) transmission properties of single walled CNT-FETs have been characterized up to 12 GHz using the proposed two-port network model. The analytical results are in good agreement with the published experimental results.

  • Investigating the performance of CNFET using 10T SET D-Flip flop

    This paper investigates the performance of Single Edge Triggered D-Flip flop (SET D-FF) using Carbon Nanotube Field Effect Transistors (CNFETs). The circuit performance of CNFET model has been compared with that of silicon based MOSFET model. CNFET circuit models are tested for various substrate bias voltages in sub threshold region. A 10 Transistor version of SET D-FF is implemented using PTM 32nm CMOS model and Stanford single-walled CNFET model and simulated using HSPICE. The performance parameter under investigation is Power Delay Product (PDP). The comparative simulation result at various frequencies show that CNFET SET DFFs have superior Power Delay Product over MOSFET SET DFFs.

  • Modeling and Performance Investigation of the Double-Gate Carbon Nanotube Transistor

    In this letter, we propose a semiclassical model for the performance investigation and optimization of the double-gate carbon nanotube field-effect transistor (DG-CNTFET). The DG-CNTFET is effective in controlling the ambipolar conduction that is inherent to Schottky barrier (SB) CNTFETs using two independent gates, namely, the primary gate and the polarity gate. Whereas the primary gate serves to turn the device on and off, the polarity gate can be used to configure the device in either the p-type or the n-type mode of operation. The DG-CNTFET exhibits unipolar conduction and can achieve a large ratio of over six orders of magnitude. Since the proposed model is physics based and does not rely on fitting parameters, it can be used to study the effect of parameters such as CNT chirality, SB height, and gate dielectric thickness on the DG-CNTFET performance.

  • Ballistic transistors entrance to nanoscale electronics

    Nanoscale devices in near future are going to be less than the mean free path of carriers. The ballistic conduction is highly probable in these devices. We have investigated the physics of the ballistic field effect transistors (FETs). The I-V characteristics of the ballistic silicon MOSFET is shown, and the mechanism of device operation was discussed. The performance limit of the MOSFET is discussed by means of the ballistic MOSFET characteristics derived. Performance of the experimental device is compared to the ballistic limit in some fabricated samples. The carbon nanotube FET is introduced as the other example of the ballistic FET. The device was found to be of exceedingly high performance if the ballistic conduction was actually realized.

  • Low leakage CNTFET full adders

    As the technology scales down to 32nm or below, the leakage power starts dominating the total power. Reduction of this leakage problem is the major problem, today's CMOS technology is facing. Hence researchers are looking for alternate technologies. The Carbon Nanotubes FET (CNTFET) is found to be a most promising device that becomes alternative or replacement for present CMOS technology. As the full adder is one of the major units of the ALU, it plays important role in speed and power consumption. In this paper several CNTFET full adder circuits are designed by applying different leakage power reduction techniques to reduce leakage power and to enhance the performance of the full adder circuit. Finally the full adder circuit with the proposed stacked single transistor leakage feedback technique was designed and proved that the proposed stacked single transistor leakage feedback CNTFET Full adder will reduce more leakage power with the same performance compared to all other techniques.



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