Capacitance

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In electromagnetism and electronics, capacitance is the ability of a body to hold an electrical charge. Capacitance is also a measure of the amount of electrical energy stored (or separated) for a given electric potential. (Wikipedia.org)






Conferences related to Capacitance

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2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE/PES Transmission and Distribution Conference and Exposition (T&D)

Bi-Annual IEEE PES T&D conference. Largest T&D conference in North America.


2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA)

Artificial Intelligence, Control and Systems, Cyber-physical Systems, Energy and Environment, Industrial Informatics and Computational Intelligence, Robotics, Network and Communication Technologies, Power Electronics, Signal and Information Processing


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Most published Xplore authors for Capacitance

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Xplore Articles related to Capacitance

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Apparatus for measuring the capacitance-voltage characteristics of semiconductor devices with an extended frequency range

2014 International Conference on Actual Problems of Electron Devices Engineering (APEDE), 2014

An upgraded automated installation for higher capacity resolution measuring the capacitance-voltage characteristics of semiconductor devices is described. The system is based on the principle of converting the measured capacitance to the frequency of the LC generator. Measurement capacity is in the range of three frequencies: 100 kHz, 500 kHz, 1 MHz.


A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503), 2000

A simple and accurate extraction of the effective channel length is carried out by utilizing the slope information of the the intrinsic gate-to-channel capacitance versus the mask gate length of ultra short-channel devices. The measurement setup where the gate is connected to a RF signal is used to remove the discrepancy problem between conventional I-V and C-V methods. In order ...


A direct measurement technique for small geometry MOS transistor capacitances

IEEE Electron Device Letters, 1985

Accurate representation of MOS transistor capacitances is important for accurate circuit simulation. Due to the difficulties of direct measurement with meters, MOS intrinsic capacitances have not been studied extensively. Although several "on-chip" methods have been developed, the need for measurement circuits fabricated alongside the devices of interest seems to be impractical for statistical data generation. In addition, the characterization of ...


Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017

In this work, we investigated the photocapacitive effect of the metal- ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.


Characterization of the Back Channel Interface in SOI MOSFET's

28th European Solid-State Device Research Conference, 1998

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Educational Resources on Capacitance

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IEEE-USA E-Books

  • Apparatus for measuring the capacitance-voltage characteristics of semiconductor devices with an extended frequency range

    An upgraded automated installation for higher capacity resolution measuring the capacitance-voltage characteristics of semiconductor devices is described. The system is based on the principle of converting the measured capacitance to the frequency of the LC generator. Measurement capacity is in the range of three frequencies: 100 kHz, 500 kHz, 1 MHz.

  • A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

    A simple and accurate extraction of the effective channel length is carried out by utilizing the slope information of the the intrinsic gate-to-channel capacitance versus the mask gate length of ultra short-channel devices. The measurement setup where the gate is connected to a RF signal is used to remove the discrepancy problem between conventional I-V and C-V methods. In order to increase the measurement accuracy, the intrinsic gate-to-channel capacitance data are determined by calibrating S-parameter sets measured at GHz using zero-bias data, instead of low-frequency C-V measurements. Contrary to the conventional C-V method, this new RF C-V method results in much smaller deviation from the I-V method.

  • A direct measurement technique for small geometry MOS transistor capacitances

    Accurate representation of MOS transistor capacitances is important for accurate circuit simulation. Due to the difficulties of direct measurement with meters, MOS intrinsic capacitances have not been studied extensively. Although several "on-chip" methods have been developed, the need for measurement circuits fabricated alongside the devices of interest seems to be impractical for statistical data generation. In addition, the characterization of both current-voltage (I-V) and capacitance-voltage (CV) relationships is not as convenient by using the "on-chip" configurations. Consequently, the direct measurement technique is more desirable than the "on-chip" methods. A direct measurement technique for the intrinsic gate capacitances in a small geometry MOS transistor has been developed and is presented in this letter. By using this method, n-channel transistors withW_{eff}/L_{eff}of, 11/11, 11/2.2, and 11/1.65 µm have been measured. The difference between the long- and short- channel devices can be clearly observed in the measured curves. The results show that the small MOSFET intrinsic capacitances can be accurately determined using off the self meters, and the use of "on-chip" circuitry is unnecessary.

  • Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

    In this work, we investigated the photocapacitive effect of the metal- ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.

  • Characterization of the Back Channel Interface in SOI MOSFET's

    None

  • Electrical capacitance tomography system for monitoring process flow in pipe

    This paper presents the development system for monitoring process flow in pipe. The system consists of a cylindrical sensor with 8 surrounding electrodes attached on external surface. An electronic circuit has been realized for injecting charges into the object and collecting the node potentials around the sensor. Then the node potentials and the dielectric of small elements of cross section are calculated. The cross-section image reconstruction of dielectric distribution in pipe is based on the finite element method and linear back-projection algorithm (LBP) method. The iterative algorithm and threshold method also have been used to improve the image quality. Experimental results of the sensor filled with two different permittivity test phantoms have been displayed in gray level. The reconstructed images are closely resemble with the cross-section of the real object in pipe.

  • Characterization of gate overlap capacitances and effective channel size in MOSFETs

    Characterization of MOSFET gate overlap capacitances is briefly discussed. A new approach for extraction of the gate overlap capacitances and of the channel width and length variation with respect to the design of the planar MOSFETs is presented and illustrated using experimental data.

  • Quantum Capacitance Measurement for SWNT FET with Thin ALD High-k Dielectric

    The thin conformal HfO<sub>2</sub> dielectric, which could provide very large geometric top-gate-capacitance C<sub>gg</sub> comparable to SWNT quantum capacitance C<sub>q</sub>, and the capacitance measurement technique developed by us, which could reduce the background capacitance down to C<sub>0</sub> ~30aF, are two key promising factors for us to study the quantum capacitance of the SWNT FET. We successfully got the pronounced oscillating peaks in the C<sub>q</sub> vs. top-gate V<sub>TG</sub>, which will be very usefully for us to better characterize the performance of the SWNT FETs and to further study the low-dimensional electronic structure.

  • A Consistent Parameter Extraction Method for Deep Submicron MOSFETs

    None

  • A capacitance method to determine the gate-to-drain/Source overlap length of MOSFET's

    A method is described which uses accurate measurement of gate-to-drain/source overlap capacitances to determine the gate-to-drain/ source overlap length for process control as well as device characterization. The method might also be a useful analytical tool in studying lateral dopant diffusion. Using this technique, the variation in overlap length of MOSFET's in a 4-in wafer is mapped. It is found that a significant spread of the overlap exits and is attributable to the implant shadowing by the polysilicon gate.