Conferences related to Carrier confinement

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2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

CLEO®/Europe will showcase the latest developments in a wide range of laser and photonics areas including laser source development, materials, ultrafast science, fibre optics, nonlinear optics, terahertz sources, high-field physics, optical telecommunications, nanophotonics, biophotonics.EQEC will feature the fundamentals of quantum optics, quantum information, atom optics, ultrafast optics, nonlinear phenomena and self-organization, plasmonics and metamaterials, fundamental nanooptics, theoretical and computational photonics.


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Periodicals related to Carrier confinement

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Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Carrier confinement

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Xplore Articles related to Carrier confinement

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Effects of Size and Shape on Electronic States of Quantum Dots

2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2006

A strained-modified, single-band, constant-potential three-dimensional model was applied to study the dependence of electronic states of InAs/GaAs quantum dots (QDs) of different shapes and sizes. The energy trends decrease monotonously with increasing QD size (i.e. E~size<sup>-gamma</sup>) but exhibit an optimum value under aspect ratio variation. The energy dependency gamma for volume is significantly different from that for base length and ...


Single-Chip 40Gb/s Widely-Tunable Transceivers with Integrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest., 2006

We present the first single-chip, widely-tunable 40 Gb/s transceivers. The devices integrate sampled grating DBR lasers with electroabsorption modulators, low optical confinement semiconductor optical amplifiers, and uni- traveling carrier photodiodes


Design and application of ultrathin SOI MOSFETs

IEEE SOS/SOI Technology Conference, 1989

Summary form only given. The fundamental electric properties of ultrathin SOI MOSFETs are reviewed and their prospects are discussed. Ultrathin SOI MOSFETs provide a viable LSI technology where there is a possibility that ultimate performance of MOS devices can be realized. The operation limit of ultrathin SOI MOSFETs should be pursued both theoretically and experimentally. Basic concepts for device optimization ...


Carrier DC and AC capture and escape times in quantum-well lasers

IEEE Photonics Technology Letters, 1995

A theoretical model is proposed to study the carrier DC and AC capture and escape times in the small signal modulation response of quantum-well lasers. We derive the DC and AC capture and escape times by calculating the carrier net capture current. Our numerical results indicate that the AC capture and escape times are smaller than the DC capture and ...


Coherent transport of hole in p type semiconductive carbon nanotube

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC., 2004

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance ...


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Educational Resources on Carrier confinement

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IEEE-USA E-Books

  • Effects of Size and Shape on Electronic States of Quantum Dots

    A strained-modified, single-band, constant-potential three-dimensional model was applied to study the dependence of electronic states of InAs/GaAs quantum dots (QDs) of different shapes and sizes. The energy trends decrease monotonously with increasing QD size (i.e. E~size<sup>-gamma</sup>) but exhibit an optimum value under aspect ratio variation. The energy dependency gamma for volume is significantly different from that for base length and height. The ground state energy for broad tip is always lower than that of narrow tip. This study allows for effective QD bandgap engineering so as to fulfil specific requirements of different QD devices

  • Single-Chip 40Gb/s Widely-Tunable Transceivers with Integrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA

    We present the first single-chip, widely-tunable 40 Gb/s transceivers. The devices integrate sampled grating DBR lasers with electroabsorption modulators, low optical confinement semiconductor optical amplifiers, and uni- traveling carrier photodiodes

  • Design and application of ultrathin SOI MOSFETs

    Summary form only given. The fundamental electric properties of ultrathin SOI MOSFETs are reviewed and their prospects are discussed. Ultrathin SOI MOSFETs provide a viable LSI technology where there is a possibility that ultimate performance of MOS devices can be realized. The operation limit of ultrathin SOI MOSFETs should be pursued both theoretically and experimentally. Basic concepts for device optimization should be established. At the same time, detailed characterization of ultrathin SOI devices should be continued. The development of crystal technology is not crucial for the development of the device technology.<<ETX>>

  • Carrier DC and AC capture and escape times in quantum-well lasers

    A theoretical model is proposed to study the carrier DC and AC capture and escape times in the small signal modulation response of quantum-well lasers. We derive the DC and AC capture and escape times by calculating the carrier net capture current. Our numerical results indicate that the AC capture and escape times are smaller than the DC capture and escape times. In some cases, they may be even smaller by one order of magnitude. We also find that the AC capture/escape time ratio is larger than the DC capture/escape time ratio by a factor of two. Therefore, conventional theoretical models that do not distinguish the differences between the DC and AC capture and escape times may overestimate the resonant frequency and underestimate the damping rate in the modulation response of quantum-well lasers, i.e., the AC capture and escape times limit the modulation bandwidth of quantum-well lasers more severely than that predicted by the DC capture and escape times.<<ETX>>

  • Coherent transport of hole in p type semiconductive carbon nanotube

    In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

  • MOVPE growth of strained 1300 nm InGaAlAsP/InGaAsP quantum well structures

    In this work we propose novel 1.3 /spl mu/m InGaAlAsP/InGaAsP MQW laser structures designed for high-temperature operation. The effects of aluminium on the band offsets and carrier confinement in MQW structures have been investigated. Epitaxial structures exhibited very high photoluminescence (PL) and sharp satellites in high-resolution X-ray diffraction. The carrier transport issues were further investigated using femtosecond time-resolved PL. Broad area lasers exhibited values of threshold current density of 261 A/cm/sup 2/ per quantum well and a slope efficiency of 0.25 W/A. The observed T/sub 0/ values of 69 K for pure InGaAsP barriers increased to about 95 K for an Al content of about 12.5%, in accordance with expectations.

  • Experimental determination of gain compression factors of a DFB laser in the presence of TM light injection

    Compared to direct current modulation, an optical modulation scheme of laser diodes exhibits no rolling off characteristics due to the electrical parasitics existing in the laser diodes. In particular, in the TM light injection scheme, no injection locking phenomena take place. A number of applications of TM light injection have been reported. In relation to these, determining the gain compression factors of laser diodes in the presence of TM light injection is essential. A new technique for determining these factors is presented. The technique is shown to be viable for measuring the gain compression of distributed feedback (DFB) lasers.<<ETX>>

  • A novel compact model of quantum effects in scaled SOI and double-gate MOSFETs

    Quantum-mechanical (QM) confinement of inversion-layer carriers significantly affects the threshold voltage and gate capacitance of highly scaled MOSFETs. In bulk-Si and partially depleted (PD) SOI (n)MOSFETs, the confinement is in the potential well defined by the gate-oxide barrier (which is virtually infinite) and the silicon conduction (or valence) band (the steep gradient of which defines the high transverse electric field, which controls the effect) (Stern, 1972). In ultra-thin-film fully depleted (FD) SOI and double-gate (DG) MOSFETs, the well is defined by the front- and back-gate oxide barriers, but the quantum effect can be significantly influenced by the electric field in the Si film (Majkusiak et al, 1998). Furthermore, as the film thickness (t/sub Si/) is increased, this influence becomes predominant as in the bulk-Si and PD/SOI devices. In this paper, we present a comprehensive compact model for the quantum-confinement effects for arbitrary t/sub Si/. The model, verified by numerical simulation results obtained with a self-consistent Schrodinger- Poisson solver (SCHRED; Vasileska et al, 2000), leads to characterizations of the threshold-voltage increase due to the carrier-energy quantization and the gate-capacitance reduction due to the perturbed carrier distribution.

  • Enhancement of hole mobility due to confinement in small diameter [110] silicon nanowires

    We present results on a detailed computation of electron and hole low-field mobility for [110] axially oriented free standing SiNWs with diameters up to 3.1 nm and at various temperatures, where the principal charge scattering mechanism is through acoustic phonons, and both confined and bulk phonons are considered. The band structure for these SiNWs is determined by using a sp3d5s* TB scheme and the confined acoustic phonon dispersion for each SiNW is obtained by solving the elastic continuum wave equation. Bulk phonon dispersion is considered to be linear and a Debye cut-off energy is used to define the domain of bulk phonon wavevectors. Electron and hole - acoustic phonon scattering rates are calculated from the first order perturbation theory and deformation potential scattering, where TB electron and hole wavefunctions are incorporated. Finally, low-field mobility values are determined through momentum relaxation time approximation, and confirmed for electron-confined phonon interaction through ensemble Monte Carlo simulations.

  • Important carrier loss mechanisms in visible lasers revealed by hydrostatic pressure

    The threshold current, I/sub th/, in Ga/sub 0.5/In/sub 0.5/P visible lasers increases with hydrostatic pressure, at 9.8meV/kbar above 8kbar, indicating thermal excitation and loss to the X minima. Below 8kbar competing effects keep I/sub th/ almost constant.



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