Conferences related to Acoustic Resonators

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This is a set of five conferences with a focus on wireless components, applications and systems that affect both now and our future lifestyle. The main niche of these conferences is to bring together technologists, circuit designers, system designers and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems. This is also an area where today's design compromises can trigger tomorrow's advanced technologies, where dreams can become a reality.


2019 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2019 IEEE International Ultrasonics Symposium (IUS)

The conference covers all aspects of the technology associated with ultrasound generation and detection and their applications.


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Periodicals related to Acoustic Resonators

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Audio, Speech, and Language Processing, IEEE Transactions on

Speech analysis, synthesis, coding speech recognition, speaker recognition, language modeling, speech production and perception, speech enhancement. In audio, transducers, room acoustics, active sound control, human audition, analysis/synthesis/coding of music, and consumer audio. (8) (IEEE Guide for Authors) The scope for the proposed transactions includes SPEECH PROCESSING - Transmission and storage of Speech signals; speech coding; speech enhancement and noise reduction; ...


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Acoustic Resonators

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Xplore Articles related to Acoustic Resonators

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Single crystal aluminum nitride film bulk acoustic resonators

2016 IEEE Radio and Wireless Symposium (RWS), 2016

In recent years, film bulk acoustic resonators (FBARs) have become important in the mobile handset market for their small size compared to surface acoustic wave resonators, their compatibility with existing integrated circuit processes, and their usage in synthesizing components such as filters and duplexers. In this work, we demonstrate through finite element simulation using COMSOL MultiPhysics and experimental data, that ...


Oscillatory <formula formulatype="inline"><tex Notation="TeX">$Q$</tex> </formula> Factor in Film Bulk Acoustic Resonators With Integrated Microfluidic Channels

IEEE Sensors Journal, 2011

When a film bulk acoustic resonator (FBAR) is coupled to a liquid layer with thickness comparable to the acoustic wavelength, the Q factor varies in a damped oscillatory pattern with the liquid thickness. This letter reports an analytical modeling and experimental demonstration of this behavior by integrating microfluidic channels to MEMS-based FBARs. It is found that Q assumes its maxima ...


High Q<inf>m</inf>×K<sup>2</sup><inf>t</inf>intrinsically switchable BST thin film bulk acoustic resonators

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017

A high Qm×K2tfundamental mode intrinsically switchable thin film bulk acoustic resonator (FBAR) based on Bao.sSro.sTiOa is designed and fabricated at 2 GHz. High Qm×K2tBST FBARs are required for the design of low insertion loss switchable BAW filters. Measurement results for the BST FBAR show a resonator mechanical quality factor (Qm) of 360 with an electromechanical coupling coefficient (K2t) of 8.6%. ...


In-Liquid Quality Factor Improvement for Film Bulk Acoustic Resonators by Integration of Microfluidic Channels

IEEE Electron Device Letters, 2009

We demonstrate a significant improvement in the quality factor (<i>Q</i>) of film bulk acoustic resonators (FBARs) in liquid environments via the integration of microfluidic channels. Our device consists of a longitudinal- mode excited zinc oxide (ZnO) FBAR and parylene-encapsulated microfluidic channels. Considerable enhancement in the <i>Q</i> of the resonant system is obtained by confining the liquid in the microfluidic channels ...


Hysteresis properties of Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ thin-film bulk acoustic resonators

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002., 2002

Applying ferroelectric materials for bulk acoustic resonators, the field dependency of piezoelectric properties has to be considered. In this work, to our knowledge for the first time, the electro-acoustic hysteresis properties of integrated PZT thin-film bulk acoustic resonators are comprehensively investigated. PZT thin film resonators with resonance frequencies around 1.8 GHz and Zr content ranging from 25% to 60% have ...


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Educational Resources on Acoustic Resonators

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IEEE-USA E-Books

  • Single crystal aluminum nitride film bulk acoustic resonators

    In recent years, film bulk acoustic resonators (FBARs) have become important in the mobile handset market for their small size compared to surface acoustic wave resonators, their compatibility with existing integrated circuit processes, and their usage in synthesizing components such as filters and duplexers. In this work, we demonstrate through finite element simulation using COMSOL MultiPhysics and experimental data, that single crystal FBARs outperform current polycrystalline devices with their higher mechanical coupling efficiency and quality factor. We also present elasticity coefficients extracted from experimental data on fabricated devices.

  • Oscillatory <formula formulatype="inline"><tex Notation="TeX">$Q$</tex> </formula> Factor in Film Bulk Acoustic Resonators With Integrated Microfluidic Channels

    When a film bulk acoustic resonator (FBAR) is coupled to a liquid layer with thickness comparable to the acoustic wavelength, the Q factor varies in a damped oscillatory pattern with the liquid thickness. This letter reports an analytical modeling and experimental demonstration of this behavior by integrating microfluidic channels to MEMS-based FBARs. It is found that Q assumes its maxima and minima when the channel thickness is an odd multiple of quarter-wavelength and a multiple of half-wave-length, respectively. The microfluidics integrated FBARs achieve a 10 × improvement of Q over fully immersed FBARs, showing the potential of use as high-resolution sensors involving liquids.

  • High Q<inf>m</inf>×K<sup>2</sup><inf>t</inf>intrinsically switchable BST thin film bulk acoustic resonators

    A high Qm×K2tfundamental mode intrinsically switchable thin film bulk acoustic resonator (FBAR) based on Bao.sSro.sTiOa is designed and fabricated at 2 GHz. High Qm×K2tBST FBARs are required for the design of low insertion loss switchable BAW filters. Measurement results for the BST FBAR show a resonator mechanical quality factor (Qm) of 360 with an electromechanical coupling coefficient (K2t) of 8.6%. Qm×K2tis 30.8, and to the best of authors' knowledge, it is the highest among the previously reported switchable BST resonators. The measured temperature coefficients of frequency (TCF) for the series and parallel resonance frequencies are -65 and -68 ppm/K, respectively.

  • In-Liquid Quality Factor Improvement for Film Bulk Acoustic Resonators by Integration of Microfluidic Channels

    We demonstrate a significant improvement in the quality factor (<i>Q</i>) of film bulk acoustic resonators (FBARs) in liquid environments via the integration of microfluidic channels. Our device consists of a longitudinal- mode excited zinc oxide (ZnO) FBAR and parylene-encapsulated microfluidic channels. Considerable enhancement in the <i>Q</i> of the resonant system is obtained by confining the liquid in the microfluidic channels of thickness comparable to the acoustic wavelength. The improved FBAR achieves <i>Q</i> values of up to 120, which represents an improvement of a factor of eight over those of current state-of-the-art devices.

  • Hysteresis properties of Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ thin-film bulk acoustic resonators

    Applying ferroelectric materials for bulk acoustic resonators, the field dependency of piezoelectric properties has to be considered. In this work, to our knowledge for the first time, the electro-acoustic hysteresis properties of integrated PZT thin-film bulk acoustic resonators are comprehensively investigated. PZT thin film resonators with resonance frequencies around 1.8 GHz and Zr content ranging from 25% to 60% have been fabricated employing multi-target sputtering. The couple coefficient and the impedance characteristics are found to show a hysteresis behaviour particularly dependent on the Zr content. For PZT resonators with low Zr content we observe a distinctive dependence of anti-resonance on the applied field while the series resonance is mostly unaffected. This behaviour changes completely for samples with high Zr content where primarily the series resonance is found to vary dependent on the applied field, a dependence which is supposed to be the consequence of 109/spl deg//71/spl deg/ domain switching in the rhombohedral phase. As potential application making use of this field dependence of acoustic properties a band-width tuneable PZT FBAR based filter will be proposed.

  • 12E-2 X-Band Filters Utilizing AlN Thin Film Bulk Acoustic Resonators

    A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a k<sub>eff</sub> <sup>2</sup> of 6.40%, a resonance Q of 246, and anti- resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of -1.7 dB, and an out-of-band rejection of -21 dB.

  • Solidly mounted ZnO shear mode film bulk acoustic resonators for sensing applications in liquids

    Solidly mounted film bulk acoustic resonators (FBAR) operating at 850 MHz in the shear vibration mode have been fabricated. C-axis inclined zinc oxide (ZnO) thin films realized by modified reactive magnetron sputtering were used. Coupling factors k/sup 2/ of 1.7% and Q-factors of 312 were determined in air. Q-factors of 192 were measured in water, making these devices attractive for sensing applications in liquids, e.g., biosensing.

  • 4E-1 Quantitative Determination of Lateral Mode Dispersion in Film Bulk Acoustic Resonators through Laser Acoustic Imaging

    Film bulk acoustic resonators are useful for many signal processing applications. Detailed knowledge of their properties is needed to optimize their design for specific applications. The finite size of these resonators precludes their use in single acoustic modes; rather, multiple wave modes, such as, lateral wave modes are always excited concurrently. In order to determine the contributions of these modes, we have been using a newly developed full-field laser acoustic imaging approach to directly measure their amplitude and phase throughout the resonator. This paper describes new results comparing modeling including both elastic and piezoelectric effects in the active material with imaging measurement of all excited modes. Fourier transformation of the acoustic amplitude and phase displacement images provides a quantitative determination of excited mode amplitude and wavenumber at any frequency. Images combined at several frequencies form a direct visualization of lateral mode excitation and dispersion for the device under test allowing mode identification and comparison with predicted operational properties. Discussion and analysis are presented for modes near the first longitudinal thickness resonance (~900 MHz) in an AlN thin film resonator. Plate wave modeling, taking account of material crystalline orientation, elastic and piezoelectric properties and overlayer metallic films, is discussed in relation to direct image measurements

  • Accurate Formula for Quality Factor Q of Thin Film Bulk Acoustic Resonators with Close Series and Parallel Resonance Frequencies

    This paper presents improved formula accuracy for quality factor Q of thin film bulk acoustic resonators (FBARs) with close series and parallel resonance frequencies. Traditionally, the series and parallel resonance behaviors are treated independently. The FBAR piezoelectric coupling coefficient is only a few percentages with the series and parallel frequencies close enough to influence each other. The FBARs with two-port configuration are fabricated using silicon bulk micro-machining technology. Including the FBAR transmission lines are analyzed to probe their characteristics using a network analyzer. The signal power loss of the transmission lines is modeled to characterize the FBARs using two-port S parameter measurement data.

  • Method of Fabricating Multiple-Frequency Film Bulk Acoustic Resonators in a Single Chip

    We report experimental results of a novel approach to integrate multiple- frequency film bulk acoustic resonators (FBAR) in a single chip. An additional tuning layer was deposited and patterned on a conventional Metal/AlN/Metal FBAR film stack. By controlling in-plane dimensions of the periodic tuning patterns, resonance frequencies are modulated according to the corresponding loading percentages. To obtain a desirable frequency response of the modulated resonance peaks (a pure frequency shift), the pitch of the tuning patterns needs to be smaller than the membrane thickness. Three thicknesses of the tuning layers are fabricated to demonstrate different tuning ranges and sensitivities. This approach provides a potential solution to integrate multiple-frequency FBAR filters of adjacent bands by only one additional lithographic patterning step



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