5,252 resources related to Dielectric Breakdown
- Topics related to Dielectric Breakdown
- IEEE Organizations related to Dielectric Breakdown
- Conferences related to Dielectric Breakdown
- Periodicals related to Dielectric Breakdown
- Most published Xplore authors for Dielectric Breakdown
2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting
The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science
Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.
IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.
The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.
This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.
Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.
2017 International Symposium on Electrical Insulating Materials (ISEIM), 2017
Many research works have been reported on space charge accumulation characteristic in polyethylene based materials, which are used as a power cable insulating material. In these reports, some of them show the relationship between the space charge accumulation and dielectric breakdown under DC high electric field. For example, Matsui et al, showed that the packet-like charges injected into Low-Density Polyethylene ...
2016 Conference on Design of Circuits and Integrated Systems (DCIS), 2016
One of the major wearout mechanisms in modern microprocessors is time- dependent dielectric breakdown. Beyond the 28 nm technology node, time- dependent dielectric breakdown from not only the frontend-of-line and backend- of-line, but also the middle-of-line, yields a significant number of failures in VLSI circuits. In this paper, we investigate the impact of time-dependent dielectric breakdown in all phases of ...
2010 10th IEEE International Conference on Solid Dielectrics, 2010
The AC 50 Hz sine dielectric breakdown of alumina ceramics versus thickness (0.127 to 2.54 mm) and purity (92%, 96% and 99.5%) was investigated. The results have shown that the dielectric strength decreases with the thickness and increases with the purity. Furthermore, the investigation of the failure morphology using the scanning electron microscopy (SEM) show for each specimens submitted to ...
2009 IEEE 9th International Conference on the Properties and Applications of Dielectric Materials, 2009
This paper describes the effects of magnetic field and low pressure on dielectric breakdown of gamma-ray irradiated epoxy resin. The experiment was carried out by applying a dc pulse voltage with the intervals adjusted from 5 ms to 10 ms. The samples were irradiated in air up to 100 kGy and then up to 1000 kGy with a dose rate ...
2017 International Electrical Engineering Congress (iEECON), 2017
This paper proposes the techniques for evaluating power transformer condition based on frequently updated test results. According to planned maintenance, insulation oil is regularly sampled and analyzed in laboratory to determine problems inside main tank by dissolved gas analysis as well as dielectric breakdown voltage test to determine dielectric property of the oil. The dissolved gas analysis is firstly compared ...
IMS 2011 Microapps - Understanding the Proper Dielectric Constant of High Frequency Laminates to Be Used for Circuit Modeling and Design
Micro-Apps 2013: Determining Circuit Material Dielectric Constant from Phase Measurements
GaN HEMTs and Schottky Diodes
IMS 2014: Broadband Continuous-mode Power Amplifiers
Optimizing Service Delivery at the Mobile Network Edge - Leandros Tassliuas - IEEE Sarnoff Symposium, 2019
PCB Fabrication Influences on Microwave Performance: MicroApps 2015 - Rogers Corporation
IMS 2014: LNA Modules for the WR4 (170-260 GHz) Frequency Range
Larson Collection interview with John V. Atanasoff
Many research works have been reported on space charge accumulation characteristic in polyethylene based materials, which are used as a power cable insulating material. In these reports, some of them show the relationship between the space charge accumulation and dielectric breakdown under DC high electric field. For example, Matsui et al, showed that the packet-like charges injected into Low-Density Polyethylene (LDPE) film with thickness of ca.150 μm lead to the dielectric breakdown under DC high electric field. The report said that the dielectric breakdown occurred within 30 minutes under various applied DC electric field of more than 200 kV/mm. Furthermore, the electric field in the material reached to about 550 kV/mm. It is considered that the dielectric breakdown in the LDPE is caused by an enhancement of the electric field locally. However, in our research, the dielectric breakdown was not observed in relatively thin LDPE film with a 30 μm-thick. In this study, we measured the space charge distribution in thin LDPE film of 30 μm-thick. The measurement was carried out using an improved PEA (Pulsed Electro-Acoustic) system with the positional resolution of less than 3 μm. Using this improved system, we investigated the influence of sample thickness on packet-like charges behavior and dielectric breakdown. As the results, we found while the packet-like charges behavior in 30 μm LDPE films showed a similar tendency to Matsui's results, the dielectric breakdown was not observed in the thin sample. In this report, we tried to understand the influence of the sample thickness on the dielectric breakdown.
One of the major wearout mechanisms in modern microprocessors is time- dependent dielectric breakdown. Beyond the 28 nm technology node, time- dependent dielectric breakdown from not only the frontend-of-line and backend- of-line, but also the middle-of-line, yields a significant number of failures in VLSI circuits. In this paper, we investigate the impact of time-dependent dielectric breakdown in all phases of fabrication processes (i.e., frontend/middle/backend-of-line) on static random access memory in modern microprocessors. With the analysis of potential resistive short defect locations in a memory cell, we propose a methodology for accurately estimating memory reliability degraded by time-dependent dielectric breakdown. Using activity profiles and device-level wearout models, we also propose a method for statistically estimating the lifetime of a memory cell. Using the simulation methodology, we investigate the lifetime degradation of a memory system while taking all three time-dependent dielectric breakdown mechanisms into account.
The AC 50 Hz sine dielectric breakdown of alumina ceramics versus thickness (0.127 to 2.54 mm) and purity (92%, 96% and 99.5%) was investigated. The results have shown that the dielectric strength decreases with the thickness and increases with the purity. Furthermore, the investigation of the failure morphology using the scanning electron microscopy (SEM) show for each specimens submitted to breakdown the presence of a canal terminated by a crater at the surface. This crater is resulting from the extraction and ejection of the matter during the breakdown process caused by the intensification of the local electric stress. An evolution of the crater size versus the sample thickness have also been observed. The analysis of the experimental results and the SEM observations confirm that the built up of the crater is a crucial step in dielectric breakdown process and the mechanism best suited to describe the dielectric breakdown in these materials is based on an electromechanical one.
This paper describes the effects of magnetic field and low pressure on dielectric breakdown of gamma-ray irradiated epoxy resin. The experiment was carried out by applying a dc pulse voltage with the intervals adjusted from 5 ms to 10 ms. The samples were irradiated in air up to 100 kGy and then up to 1000 kGy with a dose rate of 10 kGy/h by using a <sup>60</sup>Co gamma-source. The magnetic flux density of the magnetic filed was 495 mT and the pressure was reduced to 1 kPa. The effects of the pressure, magnetic filed and gamma- ray irradiation on the time to dielectric breakdown and discharge quantity were studied. Obtained results revealed that the time to dielectric breakdown increased with increasing the total dose of radiation and was delayed by decreasing the pressure and increasing the magnetic field. The discharge quantity decreased with increasing the total dose of gamma-ray irradiation and increasing the magnetic field, but increased with decreasing the pressure.
This paper proposes the techniques for evaluating power transformer condition based on frequently updated test results. According to planned maintenance, insulation oil is regularly sampled and analyzed in laboratory to determine problems inside main tank by dissolved gas analysis as well as dielectric breakdown voltage test to determine dielectric property of the oil. The dissolved gas analysis is firstly compared with limit values of gases in IEC standard. If values of gases exceed normal condition, the dissolved gases are analyzed by using Duval triangle while dielectric breakdown voltage criterion is reference with the IEC standard. These two methods are subsequently implemented in Microsoft Excel and Visual Basic for Application to evaluate the condition of power transformer and dielectric strength of insulating oil.
In this work, epoxy based nanocomposites was prepared to investigate the effect of relative humidity on surface dielectric breakdown under repeated pulses. Two kinds of inorganic nano particles, i.e. silica and alumina, were used as fillers. The experiment was carried out at room temperature with relative humidity varied from 50% to 90%. A pair of needle-plate electrodes that was tightly pressed on the sample surface made the electrode pattern. By applying repeated pulses with voltage magnitude of -30 kV at a frequency of 100 Hz between the electrodes, surface discharge was initiated and thereby the dielectric breakdown was allowed. The time from voltage application to the formation of the breakdown was measured. Obtained results indicated that the time to the breakdown was strongly dependent upon the concentration of nano particle, which was also varied as a function of the relative humidity. It is suggested that behaviors of water absorption and charge transportation are changed as a consequence of the addition of nano particles as compared to the neat epoxy, which results in the variation in the resistance to the breakdown of epoxy resin.
Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2 , dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of TBD and stress- induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.
Microcomposites epoxies are widely used as high voltage insulation. A new way to improve such materials is to add nanoparticles to the epoxy matrix, thus forming a nanostructured microcomposite. For this study, epoxy composites films filled with 60% wt of quartz microparticles were prepared, reinforced or not by 0.45% wt of organically modified Montmorillonite C30B. The dielectric breakdown strength of the samples was studied using two types of electrode and the statistical analysis of the breakdown data was performed using the Weibull distribution. The use of different electrode geometries implied a different distribution of the electrical field magnitude both in the dielectric sample and in the surrounding medium. Rigid films with a typical thickness of 1 mm are set between electrodes embedded in oil and AC voltage was increased at a constant rate until breakdown occurs. No significant difference was found in the breakdown data for microcomposites and nanostructured composites. The use of a more uniform electrical field decreases slightly the measured dielectric breakdown strength. The shape factor associated with the distribution dispersion is unchanged for both studied cases, but very low compared to classical industrial materials. Finally, the thus obtained results warrant the use of smaller-area samples if non-uniform field conditions are used.
Magnetic tunnel junctions (MTJs) with partially oxidized 9-Aring AlO<sub>x</sub>-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized MTJs, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown)
Huge magnetoresistance switching phenomenon, whose MR ratio exceeded 300%, was observed in a nano-conduction path (NCP). The ferromagnetic NCP was formed by the use of dielectric breakdown of insulator (SiO<sub>2</sub>) concomitant with an introduction of ferromagnetic atoms into NCP by electromigration.
Revision to incorporate both 1000V and 1200V maximum design voltage ratings. Review and revise as necessary the requirements for peak current design testing. Revise for metrification requirement.