Conferences related to Si Based Devices

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Si Based Devices

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Si Based Devices

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Xplore Articles related to Si Based Devices

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Status and trends in nanoscale Si-based devices and materials

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008

An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper. Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.


Atomically controlled processing for future Si-based devices

2004 IEEE Workshop on Microelectronics and Electron Devices, 2004

One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the concept of atomically controlled processing, based on atomic-order surface reaction control. Self- limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH/sub 4/, GeH/sub 4/, NH/sub 3/, PH/sub 3/, ...


Atomically controlled CVD processing for future Si-based devices

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si<sub>1-x</sub>Ge<sub>x</sub>, it is suggested that nitridation of Si atoms proceeds by transfer of N atoms ...


Atomically controlled impurity doping for future Si-based devices

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2004

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self- limiting formation of 1-3 monolayers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH/sub 4/, GeH/sub 4/, NH/sub 3/, PH/sub 3/, CH/sub ...


Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices

2017 Spanish Conference on Electron Devices (CDE), 2017

In this work, an in-depth electrical characterization of the resistive switching phenomena in HfO2/n+Si-based RRAM devices with two different top electrode (TE) materials, Ni and Cu, is performed. The results show that when Ni is employed a significantly lower cycle-to-cycle variability and an enhanced performance are obtained compared to Cu-based devices.


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Educational Resources on Si Based Devices

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IEEE.tv Videos

Heterogeneous Photonic Packaging - John Osenbach - IPC 2018
Moving from Si to SiC from the End User’s Perspective - Muhammad Nawaz, APEC 2018
Uncovering the Neural Code of Learning Control - Jennie Si - WCCI 2012 invited lecture
APEC 2011-GaN Based Power Devices in Power Electronics
FinSAL: A Novel FinFET Based Secure Adiabatic Logic for Energy-Efficient and DPA Resistant IoT Devices - Himanshu Thapliyal: 2016 International Conference on Rebooting Computing
The Long Term Reliability of Gallium Nitride
Transistors for THz Systems
Discussion: Workshop on Benchmarking Quantum Computational Devices and Systems - ICRC 2018
Building IoT Projects Faster - Ed Hemphill at Fog World Congress 2018
IMS 2014: Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material
2D Nanodevices - Paul Hurley at INC 2019
2011 IEEE Awards Edison Medal - Isamu Akasaki
The Josephson Effect: Josephson Digital Electronics in the Soviet Union
Heterogeneous Technology Configurable Fabrics for Field Programmable Co-design of CMOS and Spin-based Devices: IEEE Rebooting Computing 2017
"Approximation- Beyond the Tyranny of Digital Computing," (Rebooting Computing)
A Transformer-Based Inverted Complementary Cross-Coupled VCO with a 193.3dBc/Hz FoM and 13kHz 1/f3 Noise Corner: RFIC Interactive Forum
One HTS Josephson Junction, An Array of Applications: Has anything come from HTS devices in the last 30 years?
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 7 of 7 - SQUID-based noise thermometers for sub-Kelvin thermometry
Takuo Sugano receives the IEEE Robert N. Noyce Medal - Honors Ceremony 2016
Non-Volatile Memory Array Based Quantization - Wen Ma - ICRC San Mateo, 2019

IEEE-USA E-Books

  • Status and trends in nanoscale Si-based devices and materials

    An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper. Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.

  • Atomically controlled processing for future Si-based devices

    One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the concept of atomically controlled processing, based on atomic-order surface reaction control. Self- limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH/sub 4/, GeH/sub 4/, NH/sub 3/, PH/sub 3/, CH/sub 4/ and SiH/sub 3/CH/sub 3/) on Si(100) and Ge(100) are generalized, based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on the Si(100) surface is achieved. It is found that a higher level of electrical P atoms exist in such films, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.

  • Atomically controlled CVD processing for future Si-based devices

    One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si<sub>1-x</sub>Ge<sub>x</sub>, it is suggested that nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms at the surface by heat-treatment. The B atomic-layer doping result suggests that atomic-order Si capping on the B atomic layer already-formed on (100) surface at low temperatures such as 180-300°C improves the electrical activity even with the subsequent Si capping at 500 °C. Additionally, it is confirmed that the band engineering for group IV semiconductors becomes possible by the strain control of the Si<sub>1-x</sub>Ge<sub>x</sub>/Si heterostructure due to striped patterning. These results demonstrate the capability of the atomically controlled CVD processing approach for future Si-based devices.

  • Atomically controlled impurity doping for future Si-based devices

    One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self- limiting formation of 1-3 monolayers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH/sub 4/, GeH/sub 4/, NH/sub 3/, PH/sub 3/, CH/sub 4/ and SiH/sub 3/CH/sub 3/) on Si(100) and Ge (100) are generalized based on the Langmuir-type model. Epitaxial Si or SiGe grown on N, P or B layers already-formed on Si(100) or SiGe(100) surface is achieved. It is found that higher level of electrical active P atoms exist in such film, compared with doping under thermal equilibrium conditions. Furthermore, the capability of atomically controlled processing for doping of advanced devices with critical requirements for dopant dose and location control is demonstrated for the base doping of SiGe:C heterojunction bipolar transistors (HBTs). These results open the way to atomically controlled technology for ultra-large-scale integrations.

  • Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices

    In this work, an in-depth electrical characterization of the resistive switching phenomena in HfO2/n+Si-based RRAM devices with two different top electrode (TE) materials, Ni and Cu, is performed. The results show that when Ni is employed a significantly lower cycle-to-cycle variability and an enhanced performance are obtained compared to Cu-based devices.

  • A Metal Interconnection Using a Direct Imaging Method for HySiF (Hybrid System in Flexible) Devices

    Organic based materials and devices for flexible electronics are recognized as a promising field and application while they also have significant disadvantages such as low charge transport, process temperature limitation, and etc. Those limitations, based on material itself, make the flexible electronic device very difficult to compete with Si-based rigid electronics that have excellent device performance and much advanced design rule. However, the rigid Si based devices are also vulnerable to any types of mechanical stress when they are in use for the flexible applications. Thus, we strongly feel the need to combine benefits from the organic based flexible devices and from the Si based rigid devices by attaching the rigid thin chips on the flexible substrates such as PI (Polyimide), PET (Polyethylene phthalate) and PDMS (Polydimethylsiloxane) which is accepted as a new or future trend for the next generation of the electronic devices. In order to achieve this new concept, thin device (≤ 50μm) showing high device performance needs to be attached on the surface of deformable substrates to construct flexible electronic device circuits and it is required to interconnect the thin Si based chip with the flexible polymer substrate. For this specific interconnection, we utilized an ElectroHydroDynamic (EHD) micro-patterning system which is not damaging the flexible substrate unlike the conventional wire bonding method that mechanically damages during the bonding process. To form narrow Ag based metal interconnections, we optimized various experimental parameters (flow rate [μl/min], applying voltage [kV], working distance [], jetting velocity and acceleration [mm/s, mm/s2]) and the metal lines were sintered at 150 °C for 30 mins to remove any solvent contained in the solution based Ag ink. As a result, we expect that this work will contribute to the fabrication of 3D devices on the flexible substrate that uses the Si based thin chip interconnected by the narrow Ag based metal lines.

  • Recent Achievements and Future Development Trends of High Voltage Si-based Devices

    This paper gives an overview of the latest achievements in the area of Si- based turn-off devices for high voltage applications in the power range beyond 10MW. Today, two device technologies are available in this power range depending on the application demands: The Integrated Gate Commutated Thyristor (IGCT) and the Insulated Gate Bipolar Transistor (IGBT). In this paper, we will show the latest development trends of these two devices, including some relevant packaging results.

  • MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide

    The attractiveness of negative capacitance field-effect transistors (NC-FETs) stems from their ability to enable a subthreshold swing (SS) below the 60 mV/decade thermal limit at room temperature - a direct effect of the step-up voltage amplifier behavior of the ferroelectric [1]. This effect has been shown to yield sub-60 mV/dec SS in several Si-based NC-FETs [2-4]; however, as Si-based devices become increasingly difficult to scale, it is pertinent to explore alternative materials for NC-FETs that offer scalability in voltage as well as size [5]. One promising alternative channel material is the 2D transition metal dichalcogenide (TMD, such as MoS2), which offer sub-nm thinness and a more stable channel capacitance that, when coupled with the NC- effect, could produce steep switching over a broad range of current. To date, the only demonstration of an NC-FET with a 2D channel used a polymeric ferroelectric, resulting in a lack of stability and CMOS-compatibility despite superb low-voltage switching [6]. In this work, we demonstrate 2D NC-FETs using MoS2 with CMOS-compatible hafnium zirconium oxide (HfZrO2 or HZO) as the ferroelectric to achieve repeatable and sustained sub-60 mV/dec switching.

  • Spatial and electronic manipulation of silicon nanocrystals by atomic force microscopy

    Summary form only given. As Si-based devices shrink, interest is increasing in fast, low-power devices sensitive to small numbers of electrons. MOS structures with large Si nanocrystal arrays comprising a floating gate can be extremely fast, reliable and nonvolatile relative to conventional floating gate memories. Approximately one electron is stored per nanocrystal. Despite promising initial results, current devices have a charge transit time distribution during nanocrystal ensemble writing which limits speed. This behaviour is not completely understood, but may be due to dispersion in oxide thicknesses, nanocrystal interface states, or electronic bound state shifts due to size variations. To address these limitations, we developed an aerosol vapor synthesis/deposition technique for Si nanocrystals with active size classification, enabling narrow nanocrystal size distributions (/spl sim/10-15% of particles in 2-10 nm range). The first goal of the experiments was to use scanning probe techniques for particle manipulation and to characterize particle electronic properties and charging on a single-particle basis. Si nanocrystal structures were formed by contact mode operation and imaged in noncontact mode without further particle motion. Single nanocrystal charging by a conducting AFM tip was observed, detected as an apparent height change due to electrostatic force, followed by slow relaxation as the stored charge dissipates. Ongoing and future efforts are discussed, including nanocrystal size distribution narrowing, nanocrystal oxide thickness control, and measurement of electron transport through individual particles and ensembles.

  • Evaluations of GaN-on-Si devices for Power Electronics Applications

    As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects.



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