Conferences related to Diodes

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2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA)

Artificial Intelligence, Control and Systems, Cyber-physical Systems, Energy and Environment, Industrial Informatics and Computational Intelligence, Robotics, Network and Communication Technologies, Power Electronics, Signal and Information Processing


2019 20th International Symposium on Quality Electronic Design (ISQED)

20th International Symposium on Quality Electronic Design (ISQED 2019) is the premier interdisciplinary and multidisciplinary Electronic Design conference?bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools, integrated circuit technologies, semiconductor technology,packaging, assembly & test to achieve design quality.


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


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Periodicals related to Diodes

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Surveys & Tutorials, IEEE

Each tutorial reviews currents communications topics in network management and computer and wireless communications. Available tutorials, which are 2.5 to 5 hours in length contains the original visuals and voice-over by the presenter. IEEE Communications Surveys & Tutorials features two distinct types of articles: original articles and reprints. The original articles are exclusively written for IEEE Communications Surveys & Tutorials ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Xplore Articles related to Diodes

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Submillimeter-wave and Terahertz Diodes, Components and Subsystems

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006

Nonlinear diodes are used to extend the functionality of microwave electronics into the terahertz frequency band. Systems using this technology achieve useful transmitter power and receiver sensitivity throughout the frequency range from about 100 GHz through several terahertz. This talk will review this nonlinear diode technology, with emphasis on the ongoing research and development that will enable this terahertz technology ...


Avalanche Ruggedness of parallel connected diodes: SiC Schottky diodes vs silicon PiN diodes

8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), 2016

The impact of junction temperature variation between parallel connected SiC Schottky diodes and PiN diodes on the electrothermal ruggedness of the parallel pair have been studied. Parallel connected 600V SiC Schottky diodes and silicon PiN diodes have been subjected to electrothermal stress tests. The electrothermal robustness of the parallel connected pair have been studied as a function of 3 parameters: ...


Changes in output characteristics of broad-band superluminescent diodes in the process of long-term operation

2011 11th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM), 2011

Methods and results of reliability tests of SQW broad-band superluminescent diodes (SLD-37 series), widely used in optical coherence tomography (OCT) are presented. Main attention was paid to the alteration of SLD spectral characteristics in the aging process. It is shown that the usage of these methods in the input control of processed epiwafers deployed in the production of active elements ...


Novel high-power superluminescent diodes with wide active channels

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling, 2010

Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).


10kV SiC MPS diodes for high temperature applications

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016

This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and low reverse recovery charge with increasing temperature. Results of numerical simulation are shown ...


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Educational Resources on Diodes

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IEEE-USA E-Books

  • Submillimeter-wave and Terahertz Diodes, Components and Subsystems

    Nonlinear diodes are used to extend the functionality of microwave electronics into the terahertz frequency band. Systems using this technology achieve useful transmitter power and receiver sensitivity throughout the frequency range from about 100 GHz through several terahertz. This talk will review this nonlinear diode technology, with emphasis on the ongoing research and development that will enable this terahertz technology to transition from a tool for basic science into broader applications will also be discussed.

  • Avalanche Ruggedness of parallel connected diodes: SiC Schottky diodes vs silicon PiN diodes

    The impact of junction temperature variation between parallel connected SiC Schottky diodes and PiN diodes on the electrothermal ruggedness of the parallel pair have been studied. Parallel connected 600V SiC Schottky diodes and silicon PiN diodes have been subjected to electrothermal stress tests. The electrothermal robustness of the parallel connected pair have been studied as a function of 3 parameters: (i) The junction temperature difference between the device under test (DUTs). (ii). The avalanche duration of the UIS pulse (inductor size) and (iii). The current rating of the diodes. The results show that the maximum avalanche energy (E<sub>AV</sub><sup>MAX</sup>) sustainable by the parallel connected DUTs exhibits the following characteristics: i) E<sub>AV</sub><sup>MAX</sup> increases with the current rating (active area) of the diodes; ii) E<sub>AV</sub><sup>MAX</sup> is 370% higher for the SiC Schottky diodes compared to the silicon PiN diodes in spite of the SiC diodes having a smaller current rating and hence smaller active area; iii) E<sub>AV</sub><sup>MAX</sup> increases with the avalanche duration. This means that the safe operating area of the diodes is smaller for high current low duration UIS pulses than for low current high duration UIS pulses; iv) E<sub>AV</sub><sup>MAX</sup> reduces with increasing variation in junction temperature (T<sub>J2</sub>-T<sub>J1</sub>) between the DUTs. This reduction is smaller for SiC diodes than for silicon PiN diodes, meaning that the SiC diodes are more avalanche rugged under electrothermal imbalance between parallel connected diodes.

  • Changes in output characteristics of broad-band superluminescent diodes in the process of long-term operation

    Methods and results of reliability tests of SQW broad-band superluminescent diodes (SLD-37 series), widely used in optical coherence tomography (OCT) are presented. Main attention was paid to the alteration of SLD spectral characteristics in the aging process. It is shown that the usage of these methods in the input control of processed epiwafers deployed in the production of active elements for SLD-modules ensures the estimation of their expected life time (MTTF).

  • Novel high-power superluminescent diodes with wide active channels

    Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).

  • 10kV SiC MPS diodes for high temperature applications

    This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and low reverse recovery charge with increasing temperature. Results of numerical simulation are shown to explain the behavior of MPS diodes.

  • Spatially single-mode reliable superluminescent diodes with CW output power of up to 100 mW

    Highly efficient and reliable single-mode superluminescent diodes (SLDs) with median wavelengths of 795, 840, 960 and 1060 nm and free-space output optical power (P<sub>FS</sub>) of up to 100 mW are developed. Main parameters of lighte-mitting modules based on these SLDs are presented.

  • Schottky barrier diodes for millimeter wave detection in a foundry CMOS process

    CoSi2-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16×0.32×0.32 μm2achieve cutoff frequencies of /spl sim/1.5 and /spl sim/1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.

  • New aspects in elaboration of microwave diodes based on A/sub 3/B/sub 5/ compounds

    Development of solid-state electronics for millimeter and sub-millimeter wavelength range directly connected with solution of two physico-technological problems: manufacturing highly reliable, thermo- and radiation-resistant ohmic and Schottky contacts to submicrometer layers of A/sub 3/B/sub 5/ based semiconductors; growth of perfect sub-micrometer homo- and hetero-epitaxial films based on A/sub 3/B/sub 5/ semiconductors. In this communication we present our approach to solution of these problems. First, high quality ohmic and Schottky contacts to IMPATT and Gunn diodes have been fabricated using amorphous alloys of nitrides and borides of the refractory metals. Second, we have developed method for obtaining epitaxial structures and microwave devices based on them with low level of internal mechanical strains The main idea consists in using of so called "porous" substrates, i.e., substrates containing porous layer on the surface. Diode structures with Schottky barrier as well as Gunn diodes grown on GaAs and InP "porous" substrates have been fabricated and studied. Microwave generation has been obtained in frequency range of 120-150 GHz in pulse regime.

  • TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon

    Analytical electron microscopy is employed to study the structural properties of NiFe Schottky diodes and NiFe/MgO tunneling diodes after annealing up to 400° C. Electrical characterization revealed a drop of the barrier height for the Schottky diodes, while the tunneling diodes are thermally stable. From the cross-sectional TEM images of the Schottky diodes, metal diffusion into Si substrate was found. Investigations of the diffusion using energy dispersive spectroscopy and energy filtered transmission electron microscopy revealed that Ni diffused into the Si substrate to form nickel silicide. Moreover, in some cases, the gold capping layer also diffused into the substrate even deeper than Ni. In the case of the tunneling diodes, metal diffusion was inhibited by the presence of MgO.

  • Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes

    The concept of the RESURF DI lateral merged PiN Schottky (LMPS) diodes is introduced and experimentally demonstrated. The LMPS diode combines the advantages of fast switching times of Schottky diodes with the low forward drops exhibited by LPiN diodes. An increase in the ratio of Schottky area relative to the p-n junction area is shown to result in superior reverse recovery characteristics at the expense of an increase in the forward voltage drop. This tradeoff between forward drop and switching speed is achieved in a simple manner by varying the relative areas of the Schottky and p-n junction regions during device design. Since lifetime control is not a viable option in integrated diodes used in power IC's, the LMPS concept allows tailoring the characteristics of integrated power diodes to the application frequency for the first time.



Standards related to Diodes

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IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers


IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices



Jobs related to Diodes

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