IEEE Organizations related to Silicon Avalanche Diodes (sads)

Back to Top


Conferences related to Silicon Avalanche Diodes (sads)

Back to Top

No conferences are currently tagged "Silicon Avalanche Diodes (sads)"


Periodicals related to Silicon Avalanche Diodes (sads)

Back to Top

No periodicals are currently tagged "Silicon Avalanche Diodes (sads)"


Most published Xplore authors for Silicon Avalanche Diodes (sads)

Back to Top

No authors for "Silicon Avalanche Diodes (sads)"


Xplore Articles related to Silicon Avalanche Diodes (sads)

Back to Top

IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

IEEE Std C62.35- 2010 (Revision of IEEE Std C62.35-1987), 2010

Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-l characteristic. This component is a single package, which may ...


IEEE Approved Draft Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components - Corrigendum 1

IEEE PC62.35/D1, April 2018, 2018

Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may ...


IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1

IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010), 2018

Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may ...


The application of silicon avalanche diodes on low-voltage power systems

IEEE Transactions on Industry Applications, 2005

Application guidelines are presented for silicon avalanche diodes (SADs) for use as surge protection on low-voltage power networks. The advantages of SADs are low clamping voltage and negligible aging, with a disadvantage of low energy-handling capability. For an SAD to be used successfully in a certain situation, three conditions need to be met: 1) the equipment must require a low ...


The effect of silicon avalanche diodes on fuse behaviour in LV power networks

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248), 2001

The effect of silicon avalanche diodes (SADs) on the behaviour of fuses in low voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium voltage fuses was adapted for LV fuses operating in the presence of SADs. A ...


More Xplore Articles

Educational Resources on Silicon Avalanche Diodes (sads)

Back to Top

IEEE.tv Videos

GaN HEMTs and Schottky Diodes
ITRI: Technology Advances in Flexible Displays and Substrates
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017
Silicon Labs' Thunderboard Sense (SLTB001A): Mouser Engineering Bench Talk
Silicon THz: an Opportunity for Innovation
IEEE Patent Presentation
IMS MicroApps: Silicon Technology Solutions for Wireless Front End Modules
Silicon Photonics: An IPC Keynote with Michal Lipson
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
IMS 2015: Jonas Zmuidzinas - John Tucker Special Tribute - The High-Frequency Limits of SIS Receivers
Neuromorphic computing with integrated photonics and superconductors - Jeffrey Shainline: 2016 International Conference on Rebooting Computing
Ching W. Tang, Stephen R. Forrest and Mark E. Thompson receive the IEEE Jun-Ichi Nishizawa Medal - Honors Ceremony 2017
A 200um x 200um x 100um, 63nW, 2.4GHz Injectable Fully-Monolithic Wireless BioSensing System: RFIC Industry Showcase 2017
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Moving from Si to SiC from the End User’s Perspective - Muhammad Nawaz, APEC 2018
The Evolution and Future of RF Silicon Technologies for THz Applications
2011 IEEE Awards Ernst Weber Engineering Leadership Recognition - Tze-Chiang Chen

IEEE-USA E-Books

  • IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

    Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-l characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.

  • IEEE Approved Draft Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components - Corrigendum 1

    Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.

  • IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1

    Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.

  • The application of silicon avalanche diodes on low-voltage power systems

    Application guidelines are presented for silicon avalanche diodes (SADs) for use as surge protection on low-voltage power networks. The advantages of SADs are low clamping voltage and negligible aging, with a disadvantage of low energy-handling capability. For an SAD to be used successfully in a certain situation, three conditions need to be met: 1) the equipment must require a low clamping voltage; 2) the SAD must be able to survive in the particular environment; and 3) the SAD must be installed in such a way as not to compromise the protection level.

  • The effect of silicon avalanche diodes on fuse behaviour in LV power networks

    The effect of silicon avalanche diodes (SADs) on the behaviour of fuses in low voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium voltage fuses was adapted for LV fuses operating in the presence of SADs. A SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived.

  • The effect of silicon avalanche diodes on fuse behavior in LV power networks

    The effect of silicon avalanche diodes (SADs) on the behavior of fuses in low- voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium-voltage fuses was adapted for LV fuses operating in the presence of SADs. An SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived.

  • The application of silicon avalanche diodes on low-voltage power systems

    Application guidelines are presented for silicon avalanche diodes (SADs) for use as surge protection on low-voltage power networks. The advantages of SADs are low clamping voltage and negligible aging, with a disadvantage of low energy-handling capability. For an SAD to be used successfully in a certain situation, three conditions need to be met: the equipment must require a low clamping voltage, the SAD must be able to survive in the particular environment, and the SAD must be installed in such a way as not to compromise the protection level.

  • IEEE Draft Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

    This standard applies to the avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.

  • IEEE Draft Guide for the Application of Surge-Protective Devices for Use on the Load Side of the Service Equipment in Low Voltage (1000 V or Less, 50 or 60 Hz) AC Power Circuits

    Guidance is provided to specifiers, users and manufacturers of surge- protective devices (SPDs) about the application considerations of SPDs to power distribution systems and associated equipment. This guide applies to SPDs to be connected to the load side of the service equipment (and main over current protective device) of 50 Hz or 60 Hz ac power circuits rated 1000 V ac or less. This guide provides information on surge origins, effects of surges, number and magnitude of surge events, location categories, power distribution system (PDS) configurations, grounding and bonding, SPD specifications, SPD ratings,SPD characteristics, SPD lifetime, interactions of SPDs with a PDS, and SPD coordination considerations.

  • IEEE Draft Guide for the Application of Surge-Protective Devices for Use on the Load Side of the Service Equipment in Low Voltage (1000 V or Less, 50 or 60 Hz) AC Power Circuits

    Guidance is provided to specifiers, users and manufacturers of surge- protective devices (SPDs) about the application considerations of SPDs to power distribution systems and associated equipment. This guide applies to SPDs to be connected to the load side of the service equipment (and main over current protective device) of 50 Hz or 60 Hz ac power circuits rated 1000 V ac or less. This guide provides information on surge origins, effects of surges, number and magnitude of surge events, location categories, power distribution system (PDS) configurations, grounding and bonding, SPD specifications, SPD ratings,SPD characteristics, SPD lifetime, interactions of SPDs with a PDS, and SPD coordination considerations.



Standards related to Silicon Avalanche Diodes (sads)

Back to Top

IEEE Guide for the Application of Surge Protective Devices for Low Voltage (1000 Volts or Less) AC Power Circuits


IEEE Guide on Interactions Between Power System Disturbances and Surge Protective Devices

This guide applies to surge-protective devices (SPDs) manufactured to be connected to 50 Hz or 60 Hz ac power circuits rated at 100–1000 V rms. This guide describes the effects on SPDs of power system disturbances occurring in these low-voltage ac power circuits. The disturbances are not limited to surges. The effects of the presence and operation of SPDs on ...



Jobs related to Silicon Avalanche Diodes (sads)

Back to Top