Conferences related to Baseband Amplifiers

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2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


2020 IEEE Radio and Wireless Symposium (RWS)

RWW2020 will be an international conference covering all aspects of radio and wireless. RWW2020's multidisciplinary events will bring together innovations that are happening across the broad wireless spectrum. RWS2020, this conference application, acts as the main conference for the entire RWW of events that includes the following conferences: PAWR2020, SiRF2020, WiSNet2020, and TWiOS2020 (IEEE Topical Conference on RF/microwave Power Amplifiers, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE Topical Conference on Wireless Sensors and Sensor Networks, and IEEE Topical Workshop on the Internet of Space IoS, respectively). In addition to traditional podium presentations and poster sessions, tracks for IEEE Distinguished Lectures, Sunday half-day workshops, Monday panels, and a demo session are planned. A RWW2020 plenary talk are a parallel IoT Summit are planned. A student competition is also planned.

  • 2019 IEEE Radio and Wireless Symposium (RWS)

    This is a conference with a focus on wireless components, applications, and systems that impact both our current and future life style. The conference's main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today's design compromises can trigger tomorrow's advanced technologies. Where dreams can become a reality. RWS is the cornerstone conference for Radio Wireless Week.

  • 2018 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today’s design compromises can trigger tomorrow’s advanced technologies. Where dreams can become a reality.

  • 2017 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today’s design compromises can trigger tomorrow’s advanced technologies. Where dreams can become a reality.

  • 2016 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be bench-marked against the needs of circuit designers at the bleeding edge of RF systems, where today

  • 2015 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today

  • 2014 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state -of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2013 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state-of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2012 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state-of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2011 IEEE Radio and Wireless Symposium (RWS)

    All aspects of components and systems related to radio and wireless networks.

  • 2010 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss various aspects of wireless communication systems and the state-of-the-art in both fields by exploring the connections between hardware design and system performance.

  • 2009 IEEE Radio and Wireless Symposium (RWS)

    This symposium highlights the state of the art of hardware and systems of radio and wireless

  • 2008 IEEE Radio and Wireless Symposium (RWS)

  • 2007 IEEE Radio and Wireless Symposium (RWS)

  • 2006 IEEE Radio and Wireless Symposium (RWS)

  • 2004 IEEE Radio and Wireless Conference - (RAWCON 2004)

  • 2003 IEEE Radio and Wireless Conference - (RAWCON 2003)

  • 2002 IEEE Radio and Wireless Conference - (RAWCON 2002)

  • 2001 IEEE Radio and Wireless Conference - (RAWCON 2001)

  • 2000 IEEE Radio and Wireless Conference - (RAWCON 2000)

  • 1999 IEEE Radio and Wireless Conference - (RAWCON '99)

  • 1998 IEEE Radio and Wireless Conference - (RAWCON '98)


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Periodicals related to Baseband Amplifiers

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Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


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Most published Xplore authors for Baseband Amplifiers

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Xplore Articles related to Baseband Amplifiers

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Baseband amplifiers in transferred-substrate HBT technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260), 1998

Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.


Baseband amplifiers in a-IGZO TFT technology for flexible audio systems

2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 2015

This work shows two baseband amplifiers, which are suitable for audio system applications. The amplifiers are implemented in a flexible a-IGZO thin-film transistor (TFT) technology. They should be capable of driving printed piezoelectric loudspeakers. One of these circuits is a two-stage cascode amplifier, which is operating at 6 V DC supply voltage (VDD). It has a voltage gain of 31 ...


48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT's

IEEE Journal of Solid-State Circuits, 1999

Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicrometer emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 500 GHz. The process also provides a microstrip wiring environment on a low-/spl epsiv//sub r/ dielectric substrate. First design iterations of emitter-coupled-logic master- slave flip-flops exhibit 48 GHz maximum clock frequency when connected as static frequency ...


50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs

IEEE Journal of Solid-State Circuits, 1998

Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown base contacts, have been demonstrated. The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were of 49.3-GHz bandwidth with a 43.7-dB/spl Omega/ transimpedance gain. The resistive and mirror Darlington feedback amplifiers, respectively, achieved a bandwidth of 54.7 GHz with a ...


Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through<inline-formula><tex-math notation="LaTeX">$IM_{2}$</tex-math></inline-formula>Cancellation

IEEE Transactions on Circuits and Systems I: Regular Papers, 2016

The effect of second-order intermodulation (IM2) distortion produced by out- of-band, high-frequency interference on baseband/IF amplifiers is analyzed using the Volterra series. It is shown that a compensation loop designed to trap nonlinear currents improves the immunity of differential stages to IM2distortion generated by local feedback. Measurements of a single-ended amplifier example implementing the proposed method demonstrate an IP2increase of ...


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Educational Resources on Baseband Amplifiers

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IEEE.tv Videos

IMS 2012 Microapps - Optimizing the Design and Verification of 4G RF Power Amplifiers
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - K. R. Varian
IMS 2011 Microapps - Power Amplifier Design Utilizing the NVNA and X-Parameters
Gigabit Baseband Modem Technology for 5G millimetre wave applications - Mark Barrett: Brooklyn 5G Summit 2017
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - E. C. Niehenke
IMS 2015: Allen Katz - The Evolution of Linearizers for High Power Amplifiers
CASS Lecture by Dr. Chris Hull, "Millimeter-Wave Power Amplifiers in FinFET Technology"
An 8-10GHz Upconversion Mixer, with a Low-Frequency Calibration Loop Resulting in Better Than -73dBc In-Band Spurs: RFIC Interactive Forum
Co-design of Power Amplifier and Dynamic Power Supplies for Radar and Communications Transmitters
Enhancing 5G+ Performance: ML & DL for 5G - Tim O'Shea - B5GS 2019
Envelope Tracking and Energy Recovery Concepts for RF Switch-mode Power Amplifiers
Intermodulation Distortion Mitigation in Microwave Amplifiers and Frequency Converters
An FTNC Receiver with +32.5dBm Effective OB-IIP3 Using Baseband IM3 Cancellation: RFIC Interactive Forum 2017
IMS 2014: Broadband Continuous-mode Power Amplifiers
Design Considerations for Wideband Envelope Tracking Power Amplifiers
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
RF Induced Communication Errors in RFFE MIPI Controlled Power Amplifiers: RFIC Interactive Forum
Micro-Apps 2013: Class F Power Amplifier Design, Including System-to-Circuit-to-EM Simulation
Envelope Time-Domain Characterizations to Assess In-Band Linearity Performances of Pre-Matched MASMOS Power Amplifier: RFIC Interactive Forum 2017
A 4mW-RX 7mW-TX IEEE 802.11ah Fully-Integrated RF Transceiver: RFIC Industry Showcase 2017

IEEE-USA E-Books

  • Baseband amplifiers in transferred-substrate HBT technology

    Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.

  • Baseband amplifiers in a-IGZO TFT technology for flexible audio systems

    This work shows two baseband amplifiers, which are suitable for audio system applications. The amplifiers are implemented in a flexible a-IGZO thin-film transistor (TFT) technology. They should be capable of driving printed piezoelectric loudspeakers. One of these circuits is a two-stage cascode amplifier, which is operating at 6 V DC supply voltage (VDD). It has a voltage gain of 31 dB over a 3 dB bandwidth of 252 kHz with a DC power consumption as low as 1.5 mW. This amplifier is used as a pre-audio amplifier for driving the audio amplifier. The audio amplifier is a two-stage common-source (CS) circuit with a source-follower stage as a buffer, and is characterized with an 18 V VDD. The measured voltage gain of audio amplifier is 21.5 dB with a 3 dB bandwidth of 55 kHz from a DC power of 30 mW. The simulation of frequency responses of these circuits shows that the amplifiers can drive the loudspeakers with areas of 16 cm2 and 128 cm2. The load of this audio system is the model of printed loudspeaker with specific characterizations of manufacturer.

  • 48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT's

    Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicrometer emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 500 GHz. The process also provides a microstrip wiring environment on a low-/spl epsiv//sub r/ dielectric substrate. First design iterations of emitter-coupled-logic master- slave flip-flops exhibit 48 GHz maximum clock frequency when connected as static frequency dividers. Baseband amplifiers have been demonstrated with bandwidths up to 85 GHz.

  • 50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs

    Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown base contacts, have been demonstrated. The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were of 49.3-GHz bandwidth with a 43.7-dB/spl Omega/ transimpedance gain. The resistive and mirror Darlington feedback amplifiers, respectively, achieved a bandwidth of 54.7 GHz with a gain of 8.2 dB and a bandwidth of more than 60.0 GHz with a gain of 6.3 dB. To date, these are the widest bandwidths reported for lumped-circuit-design amplifiers. These results suggest the great potential of these amplifiers for use in future optical communication, microwave and millimeter-wave applications.

  • Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through<inline-formula><tex-math notation="LaTeX">$IM_{2}$</tex-math></inline-formula>Cancellation

    The effect of second-order intermodulation (IM2) distortion produced by out- of-band, high-frequency interference on baseband/IF amplifiers is analyzed using the Volterra series. It is shown that a compensation loop designed to trap nonlinear currents improves the immunity of differential stages to IM2distortion generated by local feedback. Measurements of a single-ended amplifier example implementing the proposed method demonstrate an IP2increase of more than 30 dB.

  • A 5 GHz dual-mode WiMAX/WLAN direct-conversion receiver

    A 5 GHz direct-conversion receiver for the IEEE 802.16 wirelessHUMAN/IEEE 802.11a WLAN standard has been designed and fabricated in a 0.25-mum SiGe BiCMOS technology. It contains a complete receiver chain including low noise amplifier, mixers, gain-programmable baseband amplifiers and tunable baseband low-pass filters. The frequency synthesizer and VCO work at either WiMAX or WLAN mode in 5 GHz unlicensed band. The chip has 5.88 dB overall chain noise figure, and consumes 360 mW with a 3 V power supply

  • Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication

    GaAs MESFET baseband amplifiers using novel distributed amplification schemes have been developed. The key feature of their design is a direct coupling architecture employing two new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed SCFL level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a DC-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer can be directly coupled with a GaAs SCFL circuit. This IC also has a DC-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broadband characteristics.

  • A low power 2.4/5.2GHz concurrent receiver using current-reused architecture

    This paper presents a low-power 2.4/5.2GHz concurrent receiver for emerging wireless sensing applications. The RF front-end design includes a concurrent dual-band low noise amplifier (LNA), a stacked mixer and VCO architecture, and variable-gain baseband amplifiers (VGA). Current-reused techniques, by sharing gain stages and stacked components, are explored in the receiver design for the further reduction of power consumption. The prototype chip, which was fabricated in a 0.18μm CMOS process, occupies a chip area of 3.67mm2, including pads and impedance matching networks. At the 2.4GHz band, the proposed receiver achieves a maximum gain of 43dB, a noise figure of 8.9dB, and a 1-dB compression point (P1dB) larger than -34dBm. At the 5.2GHz band, the proposed receiver achieves a maximum gain of 31dB, a noise figure of 16.3dB, and a P1dB larger than -27dBm. The total power consumption is 7.3mW at a supply voltage of 1.2V.

  • A flexible 500MHz to 3.6GHz wireless receiver with configurable DT FIR and IIR filter embedded in a 7b 21MS/s SAR ADC

    A flexible, digital-dominant wireless receiver in implemented in 65nm CMOS. The receive chain consists of a wide-band LNA, mixers, and baseband amplifiers. A 7b 21MS/s SAR ADC with embedded, configurable DT FIR/IIR filtering rejects aliasing interferers. Interleaving of sampling and SAR in the ADC maximizes conversion rate. The receiver achieves -92 dBm sensitivity, +33dB and +39dB adjacent and alternate channel interferer rejection with 802.15.4 packets, respectively, and -83dBm sensitivity, +41dB, +20MHz interferer rejection with 802.11 packets.

  • 20.3 A 64-QAM 60GHz CMOS transceiver with 4-channel bonding

    This paper presents a 64-QAM 60GHz CMOS transceiver, which achieves a TX-to-RX EVM of -26.3dB and can transmit 10.56Gb/s in all four channels defined in IEEE802.11ad/WiGig. By using a 4-bonded channel, 28.16Gb/s can be transmitted in 16QAM. The front-end consumes 251mW and 220mW from a 1.2-V supply in transmitting and receiving mode, respectively. Figure 20.3.1 shows the 60GHz direct-conversion front-end design. The transmitter consists of a 6-stage PA, differential preamplifiers, I/Q passive mixers and a quadrature injection- locked oscillator (QILO). The receiver consists of a 4-stage LNA, differential amplifiers, I/Q double-balanced mixers, a QILO, and baseband amplifiers. A direct-conversion architecture is employed for both TX and RX because of wide- bandwidth capability [1]. The LO consists of the 60GHz QILO and a 20GHz PLL. The 60GHz QILO works as a frequency tripler with the integrated 20GHz PLL. It can generate 7 carrier frequencies with a 36/40MHz reference, 58.32GHz(ch.1), 60.48GHz(ch.2), 62.64GHz(ch.3), and 64.80GHz(ch.4) defined in IEEE802.11ad/WiGig, 59.40GHz(ch.1-2), 61.56GHz(ch.2-3), and 63.72GHz(ch.3-4) for the channel bonding.



Standards related to Baseband Amplifiers

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Jobs related to Baseband Amplifiers

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