Conferences related to Bipolar Integrated Circuits

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2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This is a set of five conferences with a focus on wireless components, applications and systems that affect both now and our future lifestyle. The main niche of these conferences is to bring together technologists, circuit designers, system designers and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems. This is also an area where today's design compromises can trigger tomorrow's advanced technologies, where dreams can become a reality.


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Periodicals related to Bipolar Integrated Circuits

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Most published Xplore authors for Bipolar Integrated Circuits

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Xplore Articles related to Bipolar Integrated Circuits

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SiC bipolar integrated circuits on semi-insulating substrates

2009 Device Research Conference, 2009

Because of its wide bandgap, silicon carbide is attractive for applications in harsh environments, especially high temperature applications. Thermal generation currents are negligible in SiC, even at high temperatures, and the intrinsic temperature of SiC is above 900<sup>¿</sup>C. As a result, the upper temperature of SiC devices is limited by the stability of the associated metallurgy or dielectrics, rather than ...


Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

IEEE Transactions on Nuclear Science, 1998

The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.


A systems approach to electromigration prevention in bipolar integrated circuits

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,, 1988

A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining ...


Forecasting of bipolar integrated circuits hardness for various kinds of penetrating radiations

2013 23rd International Crimean Conference "Microwave & Telecommunication Technology", 2013

Experimental equipment for registration of parameters variation of integrated circuits (IC's) which are in operation mode and influenced by a flux of electrons with 4 MeV energy is considered. It's shown possibility of high energy electrons application for forecasting IC hardness to neutron and proton radiation.


Low cost technology for high frequency bipolar integrated circuits

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172), 1998

A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical "LISA" (Local Implantation Self Aligned) technology using a 14 masks process. The "basic" npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means ...


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Educational Resources on Bipolar Integrated Circuits

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IEEE.tv Videos

IEEE Custom Integrated Circuits Conference
Multi-Level Optical Weights in Integrated Circuits - IEEE Rebooting Computing 2017
Interview with Marcel J.M. Pelgrom - The Pelgrom Law: IEEE Gustav Robert Kirchhoff Award Recipient
Micro-Apps 2013: Integrated Electro-Thermal Design of a SiGe PA
IEEE Photonics Conference 2017 Recap
Education for Analog ICs
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
"Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology"
R. Jacob Baker - SSCS Chip Chat Podcast, Episode 4
Multi-Level Optimization for Large Fan-In Optical Logic Circuits - Takumi Egawa - ICRC 2018
IMS 2014:Active 600GHz Frequency Multiplier-by-Six S-MMICs for Submillimeter-Wave Generation
Interview with Takao Nishitani - IEEE Donald O. Pederson Award in Solid-State Circuits Co-Recipient 2017
2011 IEEE Medal of Honor: Morris Chang
Pt. 2: Electronic & Photonic (Co)Packaging Technologies - Bill Bottoms - Industry Panel 2, IEEE Globecom, 2019
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
BSIM Spice Model Enables FinFET and UTB IC Design
Robust Qubit Manipulation with Integrated Circuits: Optical Computing - Pérola Milman at INC 2019
Pt. 2: Limits & Prospects of Mixed-Signal Electronics - Tomislav Drenski - Industry Panel 2, IEEE Globecom, 2019
A Low-Power Fully Integrated 76-81GHz ADPLL for Automotive Applications - Ahmed R. Fridi - RFIC 2019 Showcase
ON-CHIP VOLTAGE AND TIMING DIAGNOSTIC CIRCUITS

IEEE-USA E-Books

  • SiC bipolar integrated circuits on semi-insulating substrates

    Because of its wide bandgap, silicon carbide is attractive for applications in harsh environments, especially high temperature applications. Thermal generation currents are negligible in SiC, even at high temperatures, and the intrinsic temperature of SiC is above 900<sup>¿</sup>C. As a result, the upper temperature of SiC devices is limited by the stability of the associated metallurgy or dielectrics, rather than by the semiconductor. One of the most severe limitations is imposed by the SiO<sub>2</sub> gate insulator in MOS devices, which limits their maximum operating temperature to about 200 <sup>¿</sup>C. For applications above 200 <sup>¿</sup>C, bipolar devices are required. In this work we report the performance of second-generation bipolar integrated circuits in 4H-SiC. These circuits are suitable for smallscale integration applications in smart power, aerospace, automotive, and well logging applications.

  • Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

    The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.

  • A systems approach to electromigration prevention in bipolar integrated circuits

    A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<<ETX>>

  • Forecasting of bipolar integrated circuits hardness for various kinds of penetrating radiations

    Experimental equipment for registration of parameters variation of integrated circuits (IC's) which are in operation mode and influenced by a flux of electrons with 4 MeV energy is considered. It's shown possibility of high energy electrons application for forecasting IC hardness to neutron and proton radiation.

  • Low cost technology for high frequency bipolar integrated circuits

    A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical "LISA" (Local Implantation Self Aligned) technology using a 14 masks process. The "basic" npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means of some demonstrator circuits: a "Gilbert" cell with a bandwidth of 700 MHz, and some broadband, high frequency amplifiers.

  • Supply-current analysis (scan) as a screen for bipolar integrated circuits

    A novel technique utilising the analysis of supply-current variations is proposed as a screen for digital integrated circuits. The application of the method to a simple m.s.i. circuit is used to demonstrate its capability of indicating the presence of flaws at internal circuit nodes.

  • Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits

    A circuit model for an existing silicon integrated bipolar junction transistor is exercised to evaluate presently available high frequency circuit performance. The relationship among circuit model and processing parameters are semi-quantitatively explored to offer predictions on the frequency response which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced to quantify optimized performance levels.

  • Thermal design and simulation of bipolar integrated circuits

    Keeping device operating temperatures within reasonable limits is necessary for reliability of all ICs and important for achieving the expected performance for many ICs. GaAs heterojunction bipolar transistors (HBTs) offer high speed and good device matching characteristics that are attractive for many high-speed circuits, but they are more susceptible than other IC technologies to the unexpected generation of very high junction temperatures. The reasons for this tendency are discussed, and an HBT sample-and-hold (S/H) circuit that had device temperature rises of over 300 degrees C is described. To address this problem, a new thermal simulation tool called ThCalc was created. ThCalc calculates the temperature profile of an IC and runs fast enough to allow calculations on a whole chip. ThCalc was used to redesign the S/H IC to reduce the largest temperature rise by a factor of 2.7 with a minimal impact on circuit size.<<ETX>>

  • Silicon bipolar integrated circuits for multi-Gb/second optical communication systems

    The authors discuss several important circuits for fiber-optic transmission, implemented in an advanced silicon bipolar integrated circuit technology. Specifically, the authors discuss the design considerations and measured performance of a 2:1 multiplexer, front end receiver, limiting amplifier, and decision circuit IC. Also discussed are three hybrid circuit modules: a 2:1 multiplexer, 1:2 demultiplexer, and parallel processing decision circuit. These ICs and hybrid circuit modules operate at multi-Gb/s data rates. The performance of these ICs indicates that advanced silicon bipolar integrated circuits with their high speed, functionality and low cost potential could play an important role in alleviating the electronic bottleneck in future multigigabit optical communication systems.<<ETX>>

  • Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

    An accelerated irradiation technique is used to study dose-ASET synergy effects. The impact of TID on SET is found to be identical when the dose rate is switched from high to low or from low to high.



Standards related to Bipolar Integrated Circuits

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