Conferences related to Cmos Integrated Circuits

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2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006


2020 IEEE Frontiers in Education Conference (FIE)

The Frontiers in Education (FIE) Conference is a major international conference focusing on educational innovations and research in engineering and computing education. FIE 2019 continues a long tradition of disseminating results in engineering and computing education. It is an ideal forum for sharing ideas, learning about developments and interacting with colleagues inthese fields.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


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Periodicals related to Cmos Integrated Circuits

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Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Most published Xplore authors for Cmos Integrated Circuits

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Xplore Articles related to Cmos Integrated Circuits

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The manufacture of CMOS integrated circuits in a university microelectronics laboratory

Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301), 1999

The manufacture of CMOS integrated circuits in a university laboratory course is difficult because the process is complicated and time consuming. At RIT we have developed an approach that allows the manufacture of CMOS integrated circuits similar to manufacturing in a semiconductor factory. This allows the student to learn about semiconductor manufacturing in addition to fabrication technology for CMOS integrated ...


ESD latency effects in CMOS integrated circuits

Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting, 1990

Measurements were performed on two types of commercially available and custom- made CMOS integrated circuits to investigate the latent mode of failure due to ESD (electrostatic discharge). The current injection test method is used for both polarities of discharge. Test parameters studied include threshold failure, constant amplitude multiple stress, step stress, and the stress hardening effect. Statistical analyses of the ...


Latchup current self-stop circuit for whole-chip latchup prevention in bulk CMOS integrated circuits

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353), 2002

A latchup current self-stop methodology and circuit design, which are used to prevent damage in the bulk CMOS integrated circuits due to latchup, are proposed in this paper. In a bulk CMOS chip, the core circuit blocks are always latchup sensitive due to a low holding voltage of the parasitic SCR path. The proposed latchup prevention methodology and circuit design ...


Confocal imaging by turning antennas with CMOS integrated circuits for breast cancer detection

2016 International Symposium on Antennas and Propagation (ISAP), 2016

Confocal imaging for breast cancer detection by turning an antenna array with CMOS integrated circuits is presented. The detection system consists of 65 nm technology CMOS integrated circuits such as a Gaussian monocycle pulse (GMP) generation circuits, antenna array switching (SW) matrix circuits, equivalent- time sampling circuits, and a 4×4 flat antenna array. By turning the array antennas, reference signals ...


Post-irradiation effects in CMOS integrated circuits (SRAMs)

IEEE Transactions on Nuclear Science, 1988

The postirradiation response of CMOS integrated circuits from three vendors was measured as a function of temperature and irradiation bias. It was found that a worst-case anneal temperature for rebound testing is highly process- dependent. At an anneal temperature of 80 degrees C, the timing parameters of a 16 K SRAM from vendor A quickly saturate at maximum values and ...


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Educational Resources on Cmos Integrated Circuits

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IEEE.tv Videos

"Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology"
R. Jacob Baker - SSCS Chip Chat Podcast, Episode 4
IEEE Custom Integrated Circuits Conference
A High Efficiency 39GHz CMOS Cascode Amplifier for 5G Applications - H.C. Park - RFIC 2019 Showcase
A 39GHz 64-Element Phased-Array CMOS Transceiver - Yun Wang - RFIC 2019 Showcase
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
X-band NMOS & CMOS Cross-Coupled DCO’s with “Folded” Common Mode Resonators - Run Levinger - RFIC 2019 Showcase
Multi-Level Optical Weights in Integrated Circuits - IEEE Rebooting Computing 2017
Reconfigurable 60-GHz Radar Transmitter SoC - Wooram Lee - RFIC 2019 Showcase
Pt. 2: Limits & Prospects of Mixed-Signal Electronics - Tomislav Drenski - Industry Panel 2, IEEE Globecom, 2019
ON-CHIP VOLTAGE AND TIMING DIAGNOSTIC CIRCUITS
Brooklyn 5G Summit: Going the Distance with CMOs: mm-Waves and Beyond
1.04 - 4V Digital-Intensive Dual-Mode BLE5.0/IEEE802.15.4 Transceiver SOC - N.S. Kim - RFIC 2019 Showcase
95uW 802.11g/n compliant fully-integrated wake-up receiver with -72dBm sensitivity in 14nm FinFET CMOS: RFIC Industry Showcase 2017
A Direct-Conversion Transmitter for Small-Cell Cellular Base Stations with Integrated Digital Predistortion in 65nm CMOS: RFIC Industry Showcase
Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum
Superconductive Energy-Efficient Computing - ASC-2014 Plenary-series - 6 of 13 - Wednesday 2014/8/13
Education for Analog ICs
A Low Power High Performance PLL with Temperature Compensated VCO in 65nm CMOS: RFIC Interactive Forum
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver

IEEE-USA E-Books

  • The manufacture of CMOS integrated circuits in a university microelectronics laboratory

    The manufacture of CMOS integrated circuits in a university laboratory course is difficult because the process is complicated and time consuming. At RIT we have developed an approach that allows the manufacture of CMOS integrated circuits similar to manufacturing in a semiconductor factory. This allows the student to learn about semiconductor manufacturing in addition to fabrication technology for CMOS integrated circuits.

  • ESD latency effects in CMOS integrated circuits

    Measurements were performed on two types of commercially available and custom- made CMOS integrated circuits to investigate the latent mode of failure due to ESD (electrostatic discharge). The current injection test method is used for both polarities of discharge. Test parameters studied include threshold failure, constant amplitude multiple stress, step stress, and the stress hardening effect. Statistical analyses of the results demonstrate the presence of latent failure in CMOS integrated circuits due to ESD. The work is used to further expand a charge injection model for latent failures.<<ETX>>

  • Latchup current self-stop circuit for whole-chip latchup prevention in bulk CMOS integrated circuits

    A latchup current self-stop methodology and circuit design, which are used to prevent damage in the bulk CMOS integrated circuits due to latchup, are proposed in this paper. In a bulk CMOS chip, the core circuit blocks are always latchup sensitive due to a low holding voltage of the parasitic SCR path. The proposed latchup prevention methodology and circuit design can detect and stop the occurrence of latchup without any process modification or extra fabrication cost. It is suitable for whole-chip latchup prevention of bulk CMOS integrated circuits. This proposed latchup current self-stop methodology and circuit have been verified in a 0.5-/spl mu/m 1P3M bulk CMOS process.

  • Confocal imaging by turning antennas with CMOS integrated circuits for breast cancer detection

    Confocal imaging for breast cancer detection by turning an antenna array with CMOS integrated circuits is presented. The detection system consists of 65 nm technology CMOS integrated circuits such as a Gaussian monocycle pulse (GMP) generation circuits, antenna array switching (SW) matrix circuits, equivalent- time sampling circuits, and a 4×4 flat antenna array. By turning the array antennas, reference signals can be obtained to extract the tumor response from the received signals. An alignment method is employed to compensate the phase shift caused by the jitter of the system. Using the detection system and turning antenna method, successful detection of a 1-cm tumor target is demonstrated.

  • Post-irradiation effects in CMOS integrated circuits (SRAMs)

    The postirradiation response of CMOS integrated circuits from three vendors was measured as a function of temperature and irradiation bias. It was found that a worst-case anneal temperature for rebound testing is highly process- dependent. At an anneal temperature of 80 degrees C, the timing parameters of a 16 K SRAM from vendor A quickly saturate at maximum values and display no further changes at this temperature. At higher temperatures, evidence for the anneal of the interface-state charge is observed. Dynamic bias during irradiation results in the same saturation value for the timing parameters, but the anneal time required to reach this value is no longer. CMOS/SOS integrated circuits (vendor B) showed similar behavior, except that the saturation value for the timing parameters was stable up to 105 degrees C. After irradiation to 10 Mrad(Si), a 16 K SRAM (vendor C) was annealed at 80 degrees C, and the access time decreased toward prerad values during the anneal.<<ETX>>

  • Hybrid integration of VCSEL's to CMOS integrated circuits

    Three hybrid integration techniques for bonding vertical-cavity surface- emitting lasers (VCSELs) to CMOS integrated circuit chips have been developed and compared in order to determine the optimum method of fabricating VCSEL based smart pixels for optical interconnects and free-space optical processing. Each of the three bonding techniques used different ways of attaching the VCSEL to the integrated circuit and making electrical contacts to the n- and p-mirrors. All three techniques remove the substrate from the VCSEL wafer leaving an array of individual VCSELs bonded to individual pixels. The 4/spl times/4 and/or 8/spl times/8 arrays of bonded VCSELs produced electrical and optical characteristics typical of unbonded VCSELs. Threshold voltages down to 1.5 V and dynamic resistance as low as 30 /spl Omega/ were measured, indicating good electrical contact was obtained. Optical power as high as /spl sim/10 mW for a VCSEL with a 20-/spl mu/m aperture and 0.7 mW with a 6-/spl mu/m aperture were observed. The VCSELs were operated at 200 Mb/s (our equipment limit) with the rise and fall times of the optical output <1 nS.

  • Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

    The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC' elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors' parameters is carried out.

  • A study of ESD-induced latent damage in CMOS integrated circuits

    ESD-induced latent damage in CMOS integrated circuits has been thoroughly investigated after cumulative low-level ESD stress. A study of the latent damage for transistors at the package level has been performed with various kinds of ESD stress modes. The impact of latent damage on circuit performance degradation was also evaluated using a 64 Mb DRAM chip as a DUT.

  • Application of IR-OBIRCH to the failure analysis of CMOS integrated circuits

    IR-OBIRCH (Infra-Red Optical Beam Induced Resistance Change) is a revolutionary new method for the localization of leakage current paths and detection of abnormal resistance in interconnects of ULSI devices. Application of this technique to the actual failure analysis of 0.25 /spl mu/m, 0.22 /spl mu/m & 0.18 /spl mu/m CMOS integrated circuits in volume production was demonstrated. It was found that IR-OBIRCH is a powerful fault isolation technique. Process defects detectable using this technique in our experience are: 1) Short circuits due to interconnect bridging. 2) Short circuits due to poly-gate bridging or poly-gate to source/drain bridging. 3) Resistive Vias due to the presence of micro-voids or residue at via/metal interface.

  • Influence of GAMMA-irradiation on elements of submicron cmos integrated circuits

    The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits at influence of gamma-irradiation Co60are submitted.




Jobs related to Cmos Integrated Circuits

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