# Electrostatic Discharge (ESD)

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# 5,417 resources related to Electrostatic Discharge (ESD)

### Conferences related to Electrostatic Discharge (ESD)

2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components

2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms

2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

2013 IEEE/AIAA 32nd Digital Avionics Systems Conference (DASC)

DASC is the premier annual conference providing authors an opportunity for publication and presentation to an international audience of papers encompassing the field of avionics systems for aircraft/rotorcraft/unmanned aircraft (commercial, military, general aviation) launch vehicles, missiles, spacecraft, and space transportation systems, navigation, guidance/control of flight, computers, communications, sensors (radar, infrared, visual bands), avionics architectures and data networking, communications networks, software, crew interface, space and ground components needed for the operation of military, commercial, and business aircraft, and avionics electrical power generation and control, Student papers are entered into a judged competition.

2012 13th International Symposium on Quality Electronic Design (ISQED)

The International Symposium on Quality Electronic Design (ISQED) the premier Electronic Design conference bridges the gap between Electronic/Semiconductor ecosystem members providing electronic design tools, integrated circuit technologies, semiconductor technology,packaging, assembly & test to achieve design quality.

### Periodicals related to Electrostatic Discharge (ESD)

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.

### Xplore Articles related to Electrostatic Discharge (ESD)

2009 5th Asia-Pacific Conference on Environmental Electromagnetics, 2009

In this paper, a new ESD testing system was designed and the influence of discharge voltage on ESD parameters, e.g. peak value of discharge current, rise time and peak to peak value of induced voltage in a semi-circular loop antenna, and also the reproducibility of experimental results were analyzed used the system. It was concluded that as the approaching speed ...

2001 Electrical Overstress/Electrostatic Discharge Symposium, 2001

Tests were carried out by real charged human body discharging to the ground. The results show that the peak-to-peak electric field radiated in the distance of several centimeters is in the range of 10<sup>2</sup>-10<sup>3</sup> V/m and the magnetic field strength can be in the range of 10-10<sup>2</sup> A/m in the distance of 10 cm from the discharge. The spectrum of ...

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018

A proto-type ESD generator for system immunity test of wearable devices is proposed. A wearable device is charged up to an ESD test voltage together with the designed ESD generator, and discharged to the ESD current target. The proposed ESD generator for wearable devices is validated with a real ESD measurement.

The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics, 2006

This paper advances an electrostatic discharge displacement current (ESDDC) which will "flow" through the space to all the victim devices on the EUT when discharge occurs and the ESDDC contributes to the failure of the equipment besides the discharge current and the electromagnetic field radiated from the ESD. Experiments were performed to test the ESDDC. The results show that the ...

IEE Colloquium on ESD (Electrostatic Discharge) and ESD Counter Measures (Digest No.1995/061), 1995

This paper describes experimental and numerical results of Electromagnetic (EM) pulses caused by Electrostatic Discharge (ESD) in the IEC802.2 standard set-up. Results obtained by combined Spice-TLM model of the ESD event were compared with E and H field measured by a small optically linked field sensor. They enable the distribution of the EM field above the conductive table to be ...

### Educational Resources on Electrostatic Discharge (ESD)

#### IEEE-USA E-Books

• In this paper, a new ESD testing system was designed and the influence of discharge voltage on ESD parameters, e.g. peak value of discharge current, rise time and peak to peak value of induced voltage in a semi-circular loop antenna, and also the reproducibility of experimental results were analyzed used the system. It was concluded that as the approaching speed was constant, the variations of ESD parameters with discharge voltage were divided into three regions: 'Townsend region' 'Transition region' and 'Streamer region' the field strength generated at low discharge voltage was stronger than that at high discharge voltage, better reproducibility could be also obtained at low discharge voltage.

• Tests were carried out by real charged human body discharging to the ground. The results show that the peak-to-peak electric field radiated in the distance of several centimeters is in the range of 10<sup>2</sup>-10<sup>3</sup> V/m and the magnetic field strength can be in the range of 10-10<sup>2</sup> A/m in the distance of 10 cm from the discharge. The spectrum of the field is extremely wide. The experiments also show that the amplitude of electric field radiated by ESD when human holding a metal tool discharging to the ground is about many times larger than that of the human finger discharging directly to the ground. Electrostatic discharge is one of the most common harmful electromagnetic sources to the electronic equipment in many environments. Tests also show that the captured waveform may be ringing which is stimulated by the fast rise ESD due to capacitance and inductance including any parasitic LC parameter of the probe and cable.

• A proto-type ESD generator for system immunity test of wearable devices is proposed. A wearable device is charged up to an ESD test voltage together with the designed ESD generator, and discharged to the ESD current target. The proposed ESD generator for wearable devices is validated with a real ESD measurement.

• This paper advances an electrostatic discharge displacement current (ESDDC) which will "flow" through the space to all the victim devices on the EUT when discharge occurs and the ESDDC contributes to the failure of the equipment besides the discharge current and the electromagnetic field radiated from the ESD. Experiments were performed to test the ESDDC. The results show that the ESDDC is one of the major characters of the electrostatic discharge

• This paper describes experimental and numerical results of Electromagnetic (EM) pulses caused by Electrostatic Discharge (ESD) in the IEC802.2 standard set-up. Results obtained by combined Spice-TLM model of the ESD event were compared with E and H field measured by a small optically linked field sensor. They enable the distribution of the EM field above the conductive table to be determined. This provides an opportunity to estimate of the induced currents and voltages in sensitive elements during ESD testing.<<ETX>>

• A comparison of the SEM EDX spectra for the metal charge contacts from field- returned cordless phones and for laboratory samples of fixed gap discharge (FGD) tests reveals similar chemical elements, suggesting that electrostatic discharge (ESD) is the possible source for cordless phone field failure.

• A new silicon-controlled rectifier (SCR) fabricated in a 30-V mixed-signal CDMOS (CMOS/DMOS) technology is presented. This device allows for robust electromagnetic interference (EMI) and electrostatic discharge (ESD) voltage clamp for high-speed industrial interface applications operating in variable voltage swing range (e.g., from -7 to +12 V). The device robustness is demonstrated under different pulsewidths, stress, and temperature. Analysis of the device physics is complemented via mixed-mode numerical simulations. The $\text{200} \times \text{200}\ \mu\textrm{m}^{2}$ device designed in an annular configuration achieves > ±8 kV IEC robustness and low clamping voltage at ± 20 A.

• In this paper, we present the analysis of electrostatic discharge (ESD) effects in wireless power transfer (WPT) using magnetic resonance coupling. For analyzing ESD effects, we use the simple equivalent circuit model which consists of self-inductance, mutual inductance, parasitic resistance, and capacitance. The ESD pulse is generated by the model of an ESD generator. The generated ESD pulse is injected to the source coil and the transferred ESD pulse is obtained in the time-domain. In addition, the transferred ESD pulse is analyzed in the frequency-domain. We compare the resonant frequency of the WPT system with the frequency of the transferred ESD pulse, and analyze the relationship between the two frequencies.

• The advent of practical problems associated with electrostatic discharge (ESD) has reawakened a wider interest in static electricity and again brought it to the fore. One of the main practical problems has been as a consequence of electronic circuits getting smaller, since it takes less energy to destroy them. While this paper mainly addresses ESD with respect to electronics, it must not be forgotten that ESD can affect most modern production facilities in one way or another. It can attract dust to surfaces that must be kept clean. It can also be a source of discomfort to personnel and more importantly it can create a fire hazard in combustible environments.<<ETX>>

• Temperature responses of multilevel Cu-graphene heterogeneous interconnects under the impact of an electrostatic discharge are investigated by using our self-developed time-domain finite-element method algorithm. Corresponding to the advanced CMOS processes, all parameters of such multilevel interconnects are assessed by the ITRS. It is numerically shown that when capped with 10-nm- thick multilayer graphene, the maximum temperature of the Cu-graphene interconnect could be suppressed by 45% and 30% for 13.4- and 21-nm nodes, respectively. This study could be useful for improving the reliability of interconnects in the future nanoscale integrated circuits.