Conferences related to Electrostatic Discharge (ESD)

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2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)


2013 IEEE/AIAA 32nd Digital Avionics Systems Conference (DASC)

DASC is the premier annual conference providing authors an opportunity for publication and presentation to an international audience of papers encompassing the field of avionics systems for aircraft/rotorcraft/unmanned aircraft (commercial, military, general aviation) launch vehicles, missiles, spacecraft, and space transportation systems, navigation, guidance/control of flight, computers, communications, sensors (radar, infrared, visual bands), avionics architectures and data networking, communications networks, software, crew interface, space and ground components needed for the operation of military, commercial, and business aircraft, and avionics electrical power generation and control, Student papers are entered into a judged competition.


2012 13th International Symposium on Quality Electronic Design (ISQED)

The International Symposium on Quality Electronic Design (ISQED) the premier Electronic Design conference bridges the gap between Electronic/Semiconductor ecosystem members providing electronic design tools, integrated circuit technologies, semiconductor technology,packaging, assembly & test to achieve design quality.

  • 2011 International Symposium on Quality Electronic Design (ISQED)

    ISQED is a premier Design & Design Automation conference bridges the gap between electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. ISQED is the leading conference for design for manufacturability (DFM) and quality (DFQ) issues. It provides a forum to exchange ideas and promote research, development, and application of design techniques & methods, design processes, and EDA design methodologies and tools that address issues which impa

  • 2010 11th International Symposium on Quality of Electronic Design (ISQED)

    ISQED is the pioneer and leading conference dealing with design for manufacturability and quality issues, front to back.

  • 2009 10th International Symposium on Quality of Electronic Design (ISQED)

    The International Symposium on Quality Electronic Design (ISQED), is a premier Design & Design Automation conference, aimed at bridging the gap between and integration of, electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. ISQED is the pioneer and leading conference dealing with design for manufacturability and quality issues, front to back. The conference provides a forum to present and exchange ideas and to promote the research, de

  • 2008 9th International Symposium on Quality of Electronic Design (ISQED)

    The International Symposium on Quality Electronic Design (ISQED), is a premier Design & Design Automation conference, aimed at bridging the gap between and integration of, electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. ISQED is the pioneer and leading conference dealing with design for manufacturability and quality issues, front to back. The conference provides a forum to present and exchange ideas and to promote the research.


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Periodicals related to Electrostatic Discharge (ESD)

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Electrostatic Discharge (ESD)

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Xplore Articles related to Electrostatic Discharge (ESD)

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The influence of discharge voltage on ESD parameters for air discharge

2009 5th Asia-Pacific Conference on Environmental Electromagnetics, 2009

In this paper, a new ESD testing system was designed and the influence of discharge voltage on ESD parameters, e.g. peak value of discharge current, rise time and peak to peak value of induced voltage in a semi-circular loop antenna, and also the reproducibility of experimental results were analyzed used the system. It was concluded that as the approaching speed ...


Electromagnetic field generated by transient electrostatic discharges (ESD) from person charged with low electrostatic voltage

2001 Electrical Overstress/Electrostatic Discharge Symposium, 2001

Tests were carried out by real charged human body discharging to the ground. The results show that the peak-to-peak electric field radiated in the distance of several centimeters is in the range of 10<sup>2</sup>-10<sup>3</sup> V/m and the magnetic field strength can be in the range of 10-10<sup>2</sup> A/m in the distance of 10 cm from the discharge. The spectrum of ...


A Proto-type ESD Generator for System Immunity Test of Wearable Devices

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018

A proto-type ESD generator for system immunity test of wearable devices is proposed. A wearable device is charged up to an ESD test voltage together with the designed ESD generator, and discharged to the ESD current target. The proposed ESD generator for wearable devices is validated with a real ESD measurement.


Intrinsic Characterization of Human Metal ESD: Current, Electromagnetic Field and Displacement Current

The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics, 2006

This paper advances an electrostatic discharge displacement current (ESDDC) which will "flow" through the space to all the victim devices on the EUT when discharge occurs and the ESDDC contributes to the failure of the equipment besides the discharge current and the electromagnetic field radiated from the ESD. Experiments were performed to test the ESDDC. The results show that the ...


Simulation and measurement of EM fields caused by electrostatic discharges

IEE Colloquium on ESD (Electrostatic Discharge) and ESD Counter Measures (Digest No.1995/061), 1995

This paper describes experimental and numerical results of Electromagnetic (EM) pulses caused by Electrostatic Discharge (ESD) in the IEC802.2 standard set-up. Results obtained by combined Spice-TLM model of the ESD event were compared with E and H field measured by a small optically linked field sensor. They enable the distribution of the EM field above the conductive table to be ...


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Educational Resources on Electrostatic Discharge (ESD)

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IEEE-USA E-Books

  • The influence of discharge voltage on ESD parameters for air discharge

    In this paper, a new ESD testing system was designed and the influence of discharge voltage on ESD parameters, e.g. peak value of discharge current, rise time and peak to peak value of induced voltage in a semi-circular loop antenna, and also the reproducibility of experimental results were analyzed used the system. It was concluded that as the approaching speed was constant, the variations of ESD parameters with discharge voltage were divided into three regions: 'Townsend region' 'Transition region' and 'Streamer region' the field strength generated at low discharge voltage was stronger than that at high discharge voltage, better reproducibility could be also obtained at low discharge voltage.

  • Electromagnetic field generated by transient electrostatic discharges (ESD) from person charged with low electrostatic voltage

    Tests were carried out by real charged human body discharging to the ground. The results show that the peak-to-peak electric field radiated in the distance of several centimeters is in the range of 10<sup>2</sup>-10<sup>3</sup> V/m and the magnetic field strength can be in the range of 10-10<sup>2</sup> A/m in the distance of 10 cm from the discharge. The spectrum of the field is extremely wide. The experiments also show that the amplitude of electric field radiated by ESD when human holding a metal tool discharging to the ground is about many times larger than that of the human finger discharging directly to the ground. Electrostatic discharge is one of the most common harmful electromagnetic sources to the electronic equipment in many environments. Tests also show that the captured waveform may be ringing which is stimulated by the fast rise ESD due to capacitance and inductance including any parasitic LC parameter of the probe and cable.

  • A Proto-type ESD Generator for System Immunity Test of Wearable Devices

    A proto-type ESD generator for system immunity test of wearable devices is proposed. A wearable device is charged up to an ESD test voltage together with the designed ESD generator, and discharged to the ESD current target. The proposed ESD generator for wearable devices is validated with a real ESD measurement.

  • Intrinsic Characterization of Human Metal ESD: Current, Electromagnetic Field and Displacement Current

    This paper advances an electrostatic discharge displacement current (ESDDC) which will "flow" through the space to all the victim devices on the EUT when discharge occurs and the ESDDC contributes to the failure of the equipment besides the discharge current and the electromagnetic field radiated from the ESD. Experiments were performed to test the ESDDC. The results show that the ESDDC is one of the major characters of the electrostatic discharge

  • Simulation and measurement of EM fields caused by electrostatic discharges

    This paper describes experimental and numerical results of Electromagnetic (EM) pulses caused by Electrostatic Discharge (ESD) in the IEC802.2 standard set-up. Results obtained by combined Spice-TLM model of the ESD event were compared with E and H field measured by a small optically linked field sensor. They enable the distribution of the EM field above the conductive table to be determined. This provides an opportunity to estimate of the induced currents and voltages in sensitive elements during ESD testing.<<ETX>>

  • Electrostatic discharge (ESD) mechanism for battery charge contact failure in cordless phones

    A comparison of the SEM EDX spectra for the metal charge contacts from field- returned cordless phones and for laboratory samples of fixed gap discharge (FGD) tests reveals similar chemical elements, suggesting that electrostatic discharge (ESD) is the possible source for cordless phone field failure.

  • Robust Protection Device for Electrostatic Discharge/Electromagnetic Interference in Industrial Interface Applications

    A new silicon-controlled rectifier (SCR) fabricated in a 30-V mixed-signal CDMOS (CMOS/DMOS) technology is presented. This device allows for robust electromagnetic interference (EMI) and electrostatic discharge (ESD) voltage clamp for high-speed industrial interface applications operating in variable voltage swing range (e.g., from -7 to +12 V). The device robustness is demonstrated under different pulsewidths, stress, and temperature. Analysis of the device physics is complemented via mixed-mode numerical simulations. The $\text{200} \times \text{200}\ \mu\textrm{m}^{2}$ device designed in an annular configuration achieves > ±8 kV IEC robustness and low clamping voltage at ± 20 A.

  • Electrostatic discharge (ESD) effects on wireless power transfer using magnetic resonance coupling

    In this paper, we present the analysis of electrostatic discharge (ESD) effects in wireless power transfer (WPT) using magnetic resonance coupling. For analyzing ESD effects, we use the simple equivalent circuit model which consists of self-inductance, mutual inductance, parasitic resistance, and capacitance. The ESD pulse is generated by the model of an ESD generator. The generated ESD pulse is injected to the source coil and the transferred ESD pulse is obtained in the time-domain. In addition, the transferred ESD pulse is analyzed in the frequency-domain. We compare the resonant frequency of the WPT system with the frequency of the transferred ESD pulse, and analyze the relationship between the two frequencies.

  • Electrostatic discharge: a review

    The advent of practical problems associated with electrostatic discharge (ESD) has reawakened a wider interest in static electricity and again brought it to the fore. One of the main practical problems has been as a consequence of electronic circuits getting smaller, since it takes less energy to destroy them. While this paper mainly addresses ESD with respect to electronics, it must not be forgotten that ESD can affect most modern production facilities in one way or another. It can attract dust to surfaces that must be kept clean. It can also be a source of discomfort to personnel and more importantly it can create a fire hazard in combustible environments.<<ETX>>

  • Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

    Temperature responses of multilevel Cu-graphene heterogeneous interconnects under the impact of an electrostatic discharge are investigated by using our self-developed time-domain finite-element method algorithm. Corresponding to the advanced CMOS processes, all parameters of such multilevel interconnects are assessed by the ITRS. It is numerically shown that when capped with 10-nm- thick multilayer graphene, the maximum temperature of the Cu-graphene interconnect could be suppressed by 45% and 30% for 13.4- and 21-nm nodes, respectively. This study could be useful for improving the reliability of interconnects in the future nanoscale integrated circuits.



Standards related to Electrostatic Discharge (ESD)

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American National Standard Dictionary for Technologies of Electromagnetic Compatibility (EMC), Electromagnetic Pulse (EMP) and Electrostatic Discharge (ESD) (Dictionary of EMC/EMP/ESD Terms and Definitions)


American National Standard Guide for Electrostatic Discharge Test Methodologies and Criteria for Electronic Equipment


American National Standard Guide for Electrostatic Discharge Test Methodologies and Criteria for Electronic Equipment


IEEE Standard Electrostatic Discharge Tests for Protective Relays

Specify general requirements for Electrostatic Discharge Tests of protective relays. The object of the type test described in this standard is to conform that the equipment being tested will not misoperate or be damaged when installed, energized, and subjected to a specified electrostatic discharge.



Jobs related to Electrostatic Discharge (ESD)

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