Conferences related to Transmission Line Pulse

Back to Top

2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE Power & Energy Society General Meeting (PESGM)

The Annual IEEE PES General Meeting will bring together over 2900 attendees for technical sessions, administrative sessions, super sessions, poster sessions, student programs, awards ceremonies, committee meetings, tutorials and more


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.



Periodicals related to Transmission Line Pulse

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes



Most published Xplore authors for Transmission Line Pulse

Back to Top

Xplore Articles related to Transmission Line Pulse

Back to Top

Analysis and modeling of a Low Voltage Triggered SCR ESD protection clamp with the very fast Transmission Line Pulse measurement

2010 11th International Symposium on Quality Electronic Design (ISQED), 2010

The analysis and the modeling of a Low Voltage Triggered SCR (Silicon Controlled Rectifier) under vf-TLP (very-fast Transmission Line Pulse) measurements are reported. The results measured by vf-TLP system showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the results measured by a standard 100ns TLP (Transmission Line Pulse) system. A ...


Simulation of factors influencing on waveform of transmission line pulse

2015 7th Asia-Pacific Conference on Environmental Electromagnetics (CEEM), 2015

Transmission line pulse (TLP) can be used in immunity test of electrostatic discharge. Waveform of TLP especially its rising time is very important to the test. In the paper, Factors influencing on waveform of TLP are studied. A model based on principle of TLP is established. It's then simulated. Influences of transmission line, relay, load and grounding wire on waveform ...


Analytical Model of Correlation Factor for Human-Body Model to Transmission-Line Pulse ESD Testing

IEEE Electron Device Letters, 2017

Physics of correlation between standard ESD testing and transmission line pulse test results on semiconductor devices using a simple resistor (R) inductor (L) capacitor (C) circuit model approach is presented. The correlation is not a constant factor, however, it can be used to evaluate the time to failure for the device during the human-body model event and is attributed to ...


Simulation of transmission line pulse coupling and the study of protective capacitance

2017 IEEE 5th International Symposium on Electromagnetic Compatibility (EMC-Beijing), 2017

Electrostatic discharge is a common interference problem. In the test of electrostatic discharge, the injection of pulse is the critical and important part. The probe is a key device in the entire electrostatic discharge pulse test, which has been studied by many professional people. Transmission line pulse (TLP) is now widely used in the test of electrostatic discharge, which is ...


Calibration problem of Transmission Line Pulse for ESD protection design

2016 IEEE International Nanoelectronics Conference (INEC), 2016

The degree of leaning of the Electro-Static Discharge (ESD) wave form (hereinafter referred as RON) of ESD protection parameters is closely related to the internal core circuit damage. Accurate measurement of RON requires stable short calibration with Transmission Line Pulse (TLP). In particular, for the high-precision ESD design of the thin gate oxide transistor in the most advanced technology, the ...



Educational Resources on Transmission Line Pulse

Back to Top

IEEE.tv Videos

Analysis and Implementation of Quick-Start Pulse Generator by CMOS Flipped on Quartz Substrate: RFIC Interactive Forum
Innovative Transmission Line Measurement and Characterization Reduce Time to Repair for Complex Communication Systems: MicroApps 2015 - Keysight Technologies
Micro-Apps 2013: Precision RF/MW Cable and Antenna Test in the Field
Micro-Apps 2013: Determining Circuit Material Dielectric Constant from Phase Measurements
A Damping Pulse Generator Based on Regenerated Trigger Switch: RFIC Interactive Forum
Neuromorphic Mixed-Signal Circuitry for Asynchronous Pulse Processing Neuromorphic Mixed-Signal Circuitry for Asynchronous Pulse Processing - Peter Petre: 2016 International Conference on Rebooting Computing
The R&D History of On-Line Electric Vehicles (OLEV)
Rogers at APEC 2016
1st and 10 Tutorial
IMS 2011 Microapps - Prediction of RF Breakdown in Combine Filters with FEST3D
IMS 2014: MIMO and Beamforming Solutions for 5G Technology
Keynote: Ted Rappaport - Terahertz Communication - B5GS 2019
What Publishers are Looking for in an Author: John B. Anderson
Lionel O. Barthold - IEEE Medal in Power Engineering, 2019 IEEE Honors Ceremony
APEC 2011-PSMA Power Technology Roadmap 2011 Summary
Where's my electric car?
2015 IEEE Honors: IEEE Medal for Innovations in Healthcare Technology - Takuo Aoyagi
Technologies for 5G course, Part 4 - IEEE Smart Tech Workshop
An IEEE IPC Special Session with Rafael Rios-Mueller of Nokia Bell Labs
PES-Scholarship Plus: Building the Power Workforce

IEEE-USA E-Books

  • Analysis and modeling of a Low Voltage Triggered SCR ESD protection clamp with the very fast Transmission Line Pulse measurement

    The analysis and the modeling of a Low Voltage Triggered SCR (Silicon Controlled Rectifier) under vf-TLP (very-fast Transmission Line Pulse) measurements are reported. The results measured by vf-TLP system showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the results measured by a standard 100ns TLP (Transmission Line Pulse) system. A compact model based on the vf-TLP measured characteristics is presented. The measurement result and the simulation data of the behavior approached model indicate a good correlation.

  • Simulation of factors influencing on waveform of transmission line pulse

    Transmission line pulse (TLP) can be used in immunity test of electrostatic discharge. Waveform of TLP especially its rising time is very important to the test. In the paper, Factors influencing on waveform of TLP are studied. A model based on principle of TLP is established. It's then simulated. Influences of transmission line, relay, load and grounding wire on waveform of TLP are studied respectively. Two typical factors have been tested in a real TLP model to verify the simulation results. And suggestions improving waveform of TLP are given.

  • Analytical Model of Correlation Factor for Human-Body Model to Transmission-Line Pulse ESD Testing

    Physics of correlation between standard ESD testing and transmission line pulse test results on semiconductor devices using a simple resistor (R) inductor (L) capacitor (C) circuit model approach is presented. The correlation is not a constant factor, however, it can be used to evaluate the time to failure for the device during the human-body model event and is attributed to the time to induce the thermal runaway of the device during the electrostatic-discharge event.

  • Simulation of transmission line pulse coupling and the study of protective capacitance

    Electrostatic discharge is a common interference problem. In the test of electrostatic discharge, the injection of pulse is the critical and important part. The probe is a key device in the entire electrostatic discharge pulse test, which has been studied by many professional people. Transmission line pulse (TLP) is now widely used in the test of electrostatic discharge, which is used for the simulation of the TLP pulse production and the coupling of the probe. In this article, the protective effect of the capacitance and magnetic beads are verified by simulation. Furthermore, a proposed method is given to improve the protective properties of electrostatic discharge. Some convenient selection principles are provided for the solution when a problem occurs in the actual test.

  • Calibration problem of Transmission Line Pulse for ESD protection design

    The degree of leaning of the Electro-Static Discharge (ESD) wave form (hereinafter referred as RON) of ESD protection parameters is closely related to the internal core circuit damage. Accurate measurement of RON requires stable short calibration with Transmission Line Pulse (TLP). In particular, for the high-precision ESD design of the thin gate oxide transistor in the most advanced technology, the high accuracy RON measurement of TLP is required. During short calibration, we found the contact resistance between the packaged sample and integrated circuit (IC) socket varied depending on the calibration current. Scanning Electron Microscope (SEM) analysis of contacts made it clear.

  • Modelling of a transmission line pulse measurement setup

    A mixed lumped-distributed model of a transmission line pulse (TLP) measurement setup is presented. The model of the TLP generator, rise-time filter and probing needles is extracted based on the TLP measurements of open, short and matched loads in the voltage range up to 650 V. A behavioural model of an ESD protection device is built based on the measured quasi-static TLP characteristic and on the small-signal S-parameters of the device. The presented TLP generator and DUT models are verified by comparing the measured time-domain waveforms with the simulation results.

  • ESD-reliability influence on LV/HV MOSFET devices by different zapping-voltage steps in the transmission-line pulse testing

    Impacts of zapping-voltage step (ΔV) setting on the final fault-diagnostic measurement of transmission-line pulse (TLP) testing are presented in this paper. In order to identify the influence on electrostatic-discharge (ESD) immunity evaluation, three kinds of MOSFET devices are employed, which are the LV nMOSFET (0.6-μm/5-V), HV nMOSFET and HV pMOSFET (1.8-μm/12-V) technologies devices, respectively. After a series of systematic TLP measurement, it can be found that the above mentioned variable (ΔV) has a very serious repercussion on the It2-value decision of LV nMOSFET and HV nMOSFET (the deviation caused by a maximum ΔV was up to 13.6% in the LV nMOSFET DUT, 185.4% in the HV nMOSFET DUT as compared with the corresponding Reference ΔV group), but the impact on HV pMOSFET DUTs is very weak about 0.14%. Therefore, in order to get a true It2data of DUTs, the zapping-voltage step (ΔV) setting during the TLP testing should not too small.

  • Impacts of Leakage-Biasing Failure-Mode Identification in the Transmission-Line Pulse Testing for Low-/High-Voltage MOSFET Components

    The effects of leakage-biased voltage (VLB) levels are investigated in this paper, which are set for failure-mode identification on the final fault diagnostic measurement in transmission line pulse (TLP) testing. To identify the effect on electrostatic discharge (ESD) robustness, three types of MOSFET components were employed; namely, low-voltage n-channel MOSFET (LVnMOS) (5 V/0.6 μm), high-voltage n-channel MOSFET (HVnMOS), and high-voltage p-channel MOSFET (HVpMOS) (12 V/1.8 μm) devices under test (DUTs), respectively. After a series of systematic TLP measurements, this study determined that the set VLBlevel substantially influenced the failure mode identification and It2value decision on the LVnMOS and HVnMOS DUTs, but its effect on the HVpMOS DUT was extremely weak. According to the secondary breakdown current (It2) values, the error caused by a maximum VLBlevel was up to 55.6% in the LVnMOS DUT, 81% in the HVnMOS DUT, and only 3.38% in the HVpMOS DUT. Consequently, this engendered a considerable deviation in most data derived from testing DUTs through TLP compared with those derived from a human-body model (HBM). Hence, to ensure a high correlation between values measured through TLP testing and an HBM for the same DUTs, the VLBlevel should be considered during TLP testing. The lack of correlation is demonstrated to be due to a moderate soft and hard failure during TLP measurement especially for the LVnMOS and HVnMOS samples. Therefore, to obtain accurate It2values for DUTs, the VLBlevel for the failuremode identification in TLP testing should be within a low-biasing range (such as kept VLB≤ 5 V).

  • Core and copper loss effects on the stepped impedance transmission line pulse generator

    The effect of core and copper losses on a novel magnetic compression based stepped impedance transmission line pulse generator circuit is presented. Design equations are derived and presented which take into account the current leakage into neighboring cells, losses due to magnetizing inductance currents, losses due to saturable cores and copper losses in the saturated inductance windings. It is shown that discharging an initially charged lumped element transmission line with saturable inductor switches in each cell can result in optimized energy transfer between cells of different capacitances provided the cell capacitances are in a certain fixed sequence independent of the cell inductances, but dependent on the cell losses and leakage currents. The use of pre-charge voltage in such stepped impedance magnetic compression line provides voltage multiplication in addition to pulse compression without the use of transformers, but in practice the voltage multiplication effect is limited by the losses leading to saturation and a relatively short line, containing not more than approximately 4 cells.

  • Contributions to standardization of Transmission Line Pulse testing methodology

    When characterizing semiconductor components to determine their ESD robustness using a transmission line pulse test system, there is no universally accepted standard procedure for performing the test available at present. In this paper, we address this issue whereby we study the impact of the following TLP characterization related variables: failure criterion, influence of stress step-size and cumulative stress effects. We show that the failure criterion, `any increase in leakage', yields the most reproducible and reliable results in the devices tested.



Standards related to Transmission Line Pulse

Back to Top

(Replaced) IEEE Standard VHDL Language Reference Manual

his standard revises and enhances the VHDL language reference manual (LRM) by including a standard C language interface specification; specifications from previously separate, but related, standards IEEE Std 1164 -1993,1 IEEE Std 1076.2 -1996, and IEEE Std 1076.3-1997; and general language enhancements in the areas of design and verification of electronic systems.


IEEE Recommended Practice for Determining Safe Distances From Radio Frequency Transmitting Antennas When Using Electric Blasting Caps During Explosive Operations

This project provides recommended practices for the prediction and practical determination of safe distances from radio and radar transmitting antennas when using electric initiators to remotely detonate an explosive charge. Specifically, this document includes mathematical formulas, tables, and charts that allow the user to determine safe distances from RF transmitters with spectrum bands from 0.5 MHz to 300 GHz, including ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers