Conferences related to Compound Semiconductor

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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


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Periodicals related to Compound Semiconductor

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Education, IEEE Transactions on

Educational methods, technology, and programs; history of technology; impact of evolving research on education.


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Most published Xplore authors for Compound Semiconductor

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Xplore Articles related to Compound Semiconductor

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The DARPA COmpound Semiconductor Materials On Silicon (COSMOS) Program

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008

The DARPA COmpound semiconductor materials on silicon (COSMOS) program is developing processes to enable transistor-scale heterogeneous integration of advanced compound semiconductor (CS) devices with state of the art silicon circuits. The approaches to achieve this program goal include micro assembly, monolithic epitaxial growth, and epitaxy layer bonding processes. In Phase I of the program, performers have demonstrated high quality selective ...


Ultra Linear 3.5GHz RF Front-End for OFDM System

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006

This paper presents the design and performance of chips suitable for an RF front-end module, for WiMAX applications. The chips include a low cost single pole double throw (SPDT) switch and low noise amplifier as well as a 10-Watt 3.5GHz power amplifier MMIC implemented in a plastic air cavity QFN 8times6 mm<sup>2</sup> package. Plastic packaging is used for the switch ...


Artificial neural networks for compound semiconductor device modeling and characterization

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017

This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal- model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations of device properties and parameters are also ...


Incorporation of a Curved Mirror into GaN-Based VCSEL

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018

The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.


IEE Colloquium on 'III-V Compound Semiconductor Materials Growth' (Digest No.062)

IEE Colloquium on III-V Compound Semiconductor Materials Growth, 1992

None


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Educational Resources on Compound Semiconductor

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IEEE-USA E-Books

  • The DARPA COmpound Semiconductor Materials On Silicon (COSMOS) Program

    The DARPA COmpound semiconductor materials on silicon (COSMOS) program is developing processes to enable transistor-scale heterogeneous integration of advanced compound semiconductor (CS) devices with state of the art silicon circuits. The approaches to achieve this program goal include micro assembly, monolithic epitaxial growth, and epitaxy layer bonding processes. In Phase I of the program, performers have demonstrated high quality selective growth of CS materials on CMOS wafers, as well as successful heterogeneous integration of InP heterojunction bipolar transistors (HBT) with commercially fabricated complementary-metal-oxide- semiconductor (CMOS) transistors and demonstrated a fully functional heterogeneous differential amplifier circuit. This paper will review the program goals, discuss its implications, and present recent results.

  • Ultra Linear 3.5GHz RF Front-End for OFDM System

    This paper presents the design and performance of chips suitable for an RF front-end module, for WiMAX applications. The chips include a low cost single pole double throw (SPDT) switch and low noise amplifier as well as a 10-Watt 3.5GHz power amplifier MMIC implemented in a plastic air cavity QFN 8times6 mm<sup>2</sup> package. Plastic packaging is used for the switch and the low noise amplifier. The broadband performance of these parts allow coverage from 3.3 GHz up to 3.8 GHz, over temperature range and process spread. The transmit path exhibits over 15dB of gain, thanks to very low insertion loss on the switch, manufactured on a high yield and reliable process. The error vector magnitude (EVM) is maintained below 2.5% up to 30dBm transmit power, for OFDM signal with PAR=10dB. On the receive path, the LNA provides 2 modes: a low noise operation with NF of 2.5dB and a bypass mode with 28dBm output PldB

  • Artificial neural networks for compound semiconductor device modeling and characterization

    This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal- model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations of device properties and parameters are also illustrated based on unique properties of ANNs. Finally, it is suggested that ANN technology can be quite helpful as a device characterization tool, over and above the obvious utility for multi-dimensional data fitting.

  • Incorporation of a Curved Mirror into GaN-Based VCSEL

    The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.

  • IEE Colloquium on 'III-V Compound Semiconductor Materials Growth' (Digest No.062)

    None

  • Challenges and opportunities for compound semiconductor devices in next generation wireless base station power amplifiers

    Power amplifiers for cellular base stations represent a major commercial market opportunity for GaAs, SiC and GaN FET devices. As carriers upgrade their networks to 3G services in the coming years, it is expected that the market for base station power amplifiers will grow to well over /spl Theta//year. These amplifiers typically produce 20- 80 W of RF power, have exacting linearity requirements and extreme price sensitivity. Compound semiconductor devices have a clear potential performance advantage over silicon LDMOS devices for this application, but today LDMOS remains the "technology-of choice" for most base stations. This paper will summarize the commercial market, system requirements, linearization techniques, and technology choices for 3G base stations.

  • A low-power 6GS/s track and hold circuit implemented with antimonide based compound semiconductor HBTs

    A track-and-hold (T/H) circuit which was implemented with antimonide based compound semiconductor (ABCS) HBTs operated at 6 GS/s and consumed 478 mW. With a 600 MHz, 300 mV peak-to-peak input, the fundamental to 3/sup rd/ harmonic ratio was measured to be 43 dB. It represents a power saving of at least a factor of 2 for the T/Hs of similar performance as compared with any other semiconductor technology.

  • A novel temperature analysis method for compound semiconductor integrated circuits based on iterative algorithm

    A novel temperature analysis method for compound semiconductor integrated circuits based on iteration algorithm has been presented. The iteration algorithm has been developed with efficient numerical calculation in MATLAB. This method has been applied to a simple module including 9 devices and the calculated temperature distribution has been compared to the simulated result by 3D simulation tool. The obtained results demonstrate that the novel algorithm has the ability to calculate the junction temperature of the devices in a compound semiconductor integrated circuit with high accuracy, high speed and low computation.

  • Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

    In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm2. These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.

  • DARPA MMW System Programs and How They Drive Can Compound Semiconductor Technology Needs

    DARPA has been investing in the development of compound semiconductors significantly since the MMIC program was initiated in the 1980's. This has resulted in the maturation of MMW systems for use in both commercial and military enterprises. Subsequently, Silicon technologies have matured significantly and are supplanting them in a variety of uses, such as automotive radar and indoor communications. This plenary presentation will discuss several DARPA programs that are dependent upon extending the performance of compound semiconductors beyond what Silicon appears to be able to achieve.



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