Conferences related to Semiconductor Detector

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2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.


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Periodicals related to Semiconductor Detector

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Xplore Articles related to Semiconductor Detector

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Optical filter of the window on 0∼25 degree incidence angle 980nm semiconductor detector

2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser TechnologyOptoelectronics Technology (ASOT), 2010

In this paper a window with band-pass filter is used on 980nm semiconductor detector. The window is designed with substrate HW800, materials whose index are Nh=2.4, Nl=1.7, and center wavelength 990nm. Ion Beam Associated Deposition (IBAD) is introduced to film-growing process for improving the film structure and developing the gas' ability of reaction. And all processes are monitored by both ...


IEEE Standard Techniques for Determination of Germanium Semiconductor Detector Gamma-Ray Efficiency Using a Standard Marinelli (Reentrant) Beaker Geometry

ANSI/IEEE Std 680-1978, 1978

This standard for determination of gamma-ray efficiencies of germanium semiconductor detectors was developed in recognition of the increasing number of large-volume, low-activity samples being measured by gamma-ray spectroscopy. The standardized sample geometry and measurement techniques described, when used in conjunction with the relative efficiency measurement standard ANSI/IEEE Std 325-1971 (Reaff 1977), Test Procedures for Germanium Gamma-Ray Detectors, provide a meaningful ...


Three-dimensional data acquisition with a semiconductor detector in SPECT

IEEE Transactions on Nuclear Science, 2003

The purpose of our research is to develop a new data acquisition scheme for myocardial single photon emission CT with a semiconductor detector. A gamma camera with a semiconductor detector enables us to measure projection data with arbitrary angles because the gamma camera with this detector is smaller than ordinary gamma cameras with a scintillation detector. The proposed data acquisition ...


Simulation study on the diverging SPECT system with a semiconductor detector

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009

Single photon emission CT (SPECT) systems with a semiconductor detector have several advantages compared with conventional SPECT systems with a NaI(Tl) scintillation detector in terms of energy resolution and spatial resolution. On the other hand, one of the disadvantages of the detector is a small field- of-view (FOV), and thus we proposed a new SPECT system with a diverging collimator ...


Photon Counting X-ray CT System with a Semiconductor Detector

2006 IEEE Nuclear Science Symposium Conference Record, 2006

In a conventional X-ray CT scanner with Gd<sub>2</sub>O<sub>2</sub>S detectors, the measured data are the whole X-ray energy deposited to each detector bin. The detection of energy is performed in an integration manner, so that the contribution of photons having low energy is smaller than that of those having high energy. But if we use a semiconductor detector such as CdTe ...


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Educational Resources on Semiconductor Detector

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IEEE-USA E-Books

  • Optical filter of the window on 0∼25 degree incidence angle 980nm semiconductor detector

    In this paper a window with band-pass filter is used on 980nm semiconductor detector. The window is designed with substrate HW800, materials whose index are Nh=2.4, Nl=1.7, and center wavelength 990nm. Ion Beam Associated Deposition (IBAD) is introduced to film-growing process for improving the film structure and developing the gas' ability of reaction. And all processes are monitored by both optical and crystal controller. Finally we obtained the experimental results, with good average transmissivity Tavg>90% not only on waveband 960-1030nm at 0 incidence angle, but also on waveband 940-1000nm at 25 incidence angle. This window blocks off other waveband(400-760nm, 1100-1200nm) as noise, and obtains good signal intensity from 0°-25° incidence angle at the same time. At the same time, this design overcomes the shortcomings such as high cost and difficulty in control, in the case when double-side film-growing is necessary in traditional processes.

  • IEEE Standard Techniques for Determination of Germanium Semiconductor Detector Gamma-Ray Efficiency Using a Standard Marinelli (Reentrant) Beaker Geometry

    This standard for determination of gamma-ray efficiencies of germanium semiconductor detectors was developed in recognition of the increasing number of large-volume, low-activity samples being measured by gamma-ray spectroscopy. The standardized sample geometry and measurement techniques described, when used in conjunction with the relative efficiency measurement standard ANSI/IEEE Std 325-1971 (Reaff 1977), Test Procedures for Germanium Gamma-Ray Detectors, provide a meaningful assessment of detector performance. It is recognized that many Marinelli beaker geometries are in use. However, the object of this standard is to specify a single configuration for the sole purpose of characterizing detector performance.

  • Three-dimensional data acquisition with a semiconductor detector in SPECT

    The purpose of our research is to develop a new data acquisition scheme for myocardial single photon emission CT with a semiconductor detector. A gamma camera with a semiconductor detector enables us to measure projection data with arbitrary angles because the gamma camera with this detector is smaller than ordinary gamma cameras with a scintillation detector. The proposed data acquisition scheme is to measure projection data with angles where the signal to noise ratio in projection data is relatively high. We assumed that we could measure the heart with 20 projections. In the x-y plane the positions of the detector were /spl phi/=0/spl deg/,30/spl deg/,60/spl deg/, and 90/spl deg/ (anterior to LAO 90/spl deg/) and they were /spl theta/=30/spl deg/,60/spl deg/,90/spl deg/,120/spl deg/, and 150/spl deg/ to the z-axis. Then we decided the minimum number of projections required for an acceptable quality of images, and selected optimum projection angles. The criterion for selecting the projection angle was an integral value of the power spectrum for each projection. We listed projection data in descending order according to this integral value and made four projection subsets. A subset was composed of two projections, i.e., the projection which had the largest integral value and the other projection which was perpendicular to the former one. In the image reconstruction, we used the ordered subset expectation maximization method and used the above four subsets. As a result, even with only eight projection data we could obtain images of almost the same quality as those obtained with 60 projections.

  • Simulation study on the diverging SPECT system with a semiconductor detector

    Single photon emission CT (SPECT) systems with a semiconductor detector have several advantages compared with conventional SPECT systems with a NaI(Tl) scintillation detector in terms of energy resolution and spatial resolution. On the other hand, one of the disadvantages of the detector is a small field- of-view (FOV), and thus we proposed a new SPECT system with a diverging collimator to enlarge the FOV. In this SPECT system with the diverging collimator, the effect of the shadow zone and a truncation problem in the axial direction should be considered. And to cope with this problem, we adopted an FBP-type cone-beam reconstruction algorithm with Radon space interpolation, which was proposed by Yang et al. This method reconstructs more accurate images than the Feldkamp, Davis, Kress (FDK) method or Grangeat's method. In this study we evaluated the images reconstructed with Yang's method applied to the data acquired with a diverging collimator. The results obtained with simulations showed the feasibility of the SPECT system with a semiconductor detector and a diverging collimator.

  • Photon Counting X-ray CT System with a Semiconductor Detector

    In a conventional X-ray CT scanner with Gd<sub>2</sub>O<sub>2</sub>S detectors, the measured data are the whole X-ray energy deposited to each detector bin. The detection of energy is performed in an integration manner, so that the contribution of photons having low energy is smaller than that of those having high energy. But if we use a semiconductor detector such as CdTe with a photon counting mode, we may obtain valuable information for the medium being imaged. For example, if we obtain some information about energy spectra for detected photons, we can enhance the contrast resolution of media having almost the same linear attenuation coefficient as soft tissues by weighing the counted photons having lower energy. To clarify the validity of our proposed method, we used a CdTe semiconductor detector and reconstructed images with projection data measured with different thresholds in counting X-ray photons.

  • Pulse shape recognition for CdZnTe semiconductor detector by using multi-shaping amplifiers method with neural network algorithm

    A new pulse shape recognition method with multi-shaping amplifiers, combined with a neural network algorithm, has been developed, where four pulse heights are sampled from one signal pulse through four linear amplifiers with different shaping time constants. The four pulse heights are used as characteristic parameters to recognize the pulse shape with a neural network. This method has been applied to signal processing for a CdZnTe semiconductor detector to improve the deteriorated energy spectra caused by pulse height deficits due to the different mobilities of electrons and holes in the detector. The neural network recognizes the pulse shape patterns and provides the corrective magnification factors of the pulse heights. After the corrective procedure, the energy spectrum for /sup 137/Cs gamma-rays is improved from 9.3 keV to 7.4 keV in the energy resolution (FWHM) of the 662 keV gamma rays photopeak. The photopeak becomes a considerably symmetrical shape without a low-energy tail. It has been verified that this method is simple and useful for pulse shape analyses, which can be used for many other applications.

  • Noise considerations for a very low threshold semiconductor detector system

    The search for dark matter motivates development of a semiconductor detector system with a very low noise threshold. The CoGeNT and MAJORANA projects both make use of hyper-pure Ge detectors and are in principle sensitive to the ionization signals produced by dark matter particles scattering from Ge nuclei if sub-keV thresholds can be achieved.We describe progress toward mitigating noise on several fronts: the lIf noise that is inherent in capacitors and may also be present in the depletion layer of pn junctions, and the aliasing noise that is endemic with FFTs taken digitally over a large frequency range. An operating front-end design with an ENC (equivalent noise charge) of 4.5 electrons RMS has been demonstrated.

  • Single-power-supply differential-output circuit-architecture for digitized preamplifiers of semiconductor detector signals

    A new compact circuit architecture is proposed for digitized preamplifiers of semiconductor detector signals, suitable for high-resolution gamma-ray spectroscopy. The circuit features single power supply, active decay time reduction, differential output with precise common mode level setting for ADC matching, auto zeroing of the differential output signal offset. Use of a single power supply minimizes the cable burden and is useful when maximum integration is required. Use of a differential output signal maximizes the voltage range while keeping the power supply and the power consumption low. Reduction of the decay time is useful for pattern recognition and minimizes event-to-event pileup at high counting rates. Automatic zeroing of the output differential voltage and precise setting of the common mode voltage is useful to match the preamplifier to differential flash ADCs, using at best their dynamic range. Experimental data and more details on these and other key design issues will be shown in the paper.

  • Maximum-likelihood estimation for semiconductor detector arrays

    We propose a rigorous statistical treatment of data from semiconductor detector arrays using maximum-likelihood estimation. For pixellated and cross- striped electrodes, a single gamma-ray interaction can produce signals in multiple electrodes. The set of signals generated from a single gamma-ray interaction are random variables with a probability law dependent on the position and energy of the gamma ray. If the signals are fixed then the probability law becomes the likelihood function. The maximum-likelihood estimate is then the position and energy that maximize the likelihood. We applied this estimator to a 48/spl times/48 pixellated CdZnTe array with 125 /spl mu/m pixel spacing. The likelihood law was evaluated with Monte-Carlo integration using a model of all physical processes affecting signal generation. By simplifying the physical model such that each gamma ray can undergo only one scattering process, computation time is greatly reduced with no measurable effect on energy resolution. The energy estimates formed histograms with 7.5 keV full-width-half-maximum (FWHM) at 140 keV, and 6 keV FWHM at 60 keV. Currently used methods show at best 11 keV FWHM at 140 keV and 9 keV FWHM at 60 keV. Comparison with simulations shows that these devices behave close to our model.

  • Development of thyroid diagnostic equipment using semiconductor detector

    Current commercial gamma-ray imaging system are general purpose device designed to support a diagnosis for thyroid cancer. These generally require a reasonably large detector plate and the ability to image the thyroid. Recently, new applications of gamma-ray imaging system have emerged which place different demands on gamma-ray imaging system instrumentation, requiring high spatial resolution and sensitivity, in particular for imaging small volumes. These emerging applications, a large plate is not only not required but also limits the performance that can be achieved when imaging small volumes. Significant research has been undertaken in the development of read out schemes of scintillator crystal configurations in an attempt to improve the spatial resolution of gamma-ray imaging system. Silicon Photomultiplier (SiPM) detectors are attractive candidates for the replacement of Photomultiplier in nuclear imaging. Provide high gain with low voltage and fast response. We are developing a new gamma-ray imaging system detection module with depth of interaction capability. Pixilated scintillation crystals read out by SiPM 4×4 arrays form the basis of the new module. This article concentrates on comparison of the some kind of scintillator performance of the SiPM. In particular we are interested in measuring and quantitative improvement of the detector efficiency, linearity, and energy resolution of the SiPM based detector. Initial characterization of prototype detector consisting of a 4 × 4 SiPM array coupled to either the front surface of a 3mm × 3mm × 15mm × 16pics LYSO crystal. The readout system include SensL preamplifier circuit, anger logic circuit, Notice Scintillate ADC(FADC) and collect & analysis data software root. The parameters that have been measured are: detector efficiency, linearity, and energy resolution. Best energy resolution was experimentally measured 11% for 511keV and spatial resolutions <; 3mm (22Na, 1uCi).




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