Conferences related to Electron Sources

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


ICC 2021 - IEEE International Conference on Communications

IEEE ICC is one of the two flagship IEEE conferences in the field of communications; Montreal is to host this conference in 2021. Each annual IEEE ICC conference typically attracts approximately 1,500-2,000 attendees, and will present over 1,000 research works over its duration. As well as being an opportunity to share pioneering research ideas and developments, the conference is also an excellent networking and publicity event, giving the opportunity for businesses and clients to link together, and presenting the scope for companies to publicize themselves and their products among the leaders of communications industries from all over the world.


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


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Periodicals related to Electron Sources

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


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Most published Xplore authors for Electron Sources

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Xplore Articles related to Electron Sources

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Modelling of field emission from electron sources with prolate spheroidal shape

2014 Tenth International Vacuum Electron Sources Conference (IVESC), 2014

Field emission characteristics: transmission coefficient, energy distribution, field emission current and IV-curve are derived analytically for a prolate spheroidal emitter model.


Applications of electron sources and other influence of process parameter on the cathode characteristics during CRT manufacturing

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839), 2004

The gas ratio of aging process during CRT manufacturing was studied to clarify the influence of the residual gases on the cathode characteristics. According to the experimental results, by proper controlling the gas ratio, the cathode damage or contamination can be avoided. In addition, by using the electron beam simulation software the electron beam trajectory of aging process can be ...


Electron sources for MAPPER maskless lithography

2014 Tenth International Vacuum Electron Sources Conference (IVESC), 2014

MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,260 electron beams further on split in 49 sub beams, each sub beam delivering a current of 0.3nA on the wafer, a throughput of 10 wafers per hour (wph) is realized for 22nm ...


CNTs and CNT/ZnO nanostructures for use as electron sources

2010 8th International Vacuum Electron Sources Conference and Nanocarbon, 2010

The paper presents the growth and optimization of carbon nanotube (CNT) and CNT/zinc oxide nanostructures to produce novel electron sources. The emitters studied in this project are based on regular array of vertically aligned 5 μm height and 50 nm diameter CNTs with a pitch of 10 μm. Such a cathode design allows to minimize electric field shielding effects and ...


Cooling systems for advanced vacuum electron sources

2014 Tenth International Vacuum Electron Sources Conference (IVESC), 2014

The precise and reliable cooling system for Vacuum Electron Sources at AREAL linear accelerator has been developed. The cooling system provides high accuracy temperature stability for accelerator components.


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Educational Resources on Electron Sources

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IEEE-USA E-Books

  • Modelling of field emission from electron sources with prolate spheroidal shape

    Field emission characteristics: transmission coefficient, energy distribution, field emission current and IV-curve are derived analytically for a prolate spheroidal emitter model.

  • Applications of electron sources and other influence of process parameter on the cathode characteristics during CRT manufacturing

    The gas ratio of aging process during CRT manufacturing was studied to clarify the influence of the residual gases on the cathode characteristics. According to the experimental results, by proper controlling the gas ratio, the cathode damage or contamination can be avoided. In addition, by using the electron beam simulation software the electron beam trajectory of aging process can be quantitatively realized and an optimum aging parameter can be achieved.

  • Electron sources for MAPPER maskless lithography

    MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,260 electron beams further on split in 49 sub beams, each sub beam delivering a current of 0.3nA on the wafer, a throughput of 10 wafers per hour (wph) is realized for 22nm node lithography. In total a current of 175μA on the wafer is required. By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV.

  • CNTs and CNT/ZnO nanostructures for use as electron sources

    The paper presents the growth and optimization of carbon nanotube (CNT) and CNT/zinc oxide nanostructures to produce novel electron sources. The emitters studied in this project are based on regular array of vertically aligned 5 μm height and 50 nm diameter CNTs with a pitch of 10 μm. Such a cathode design allows to minimize electric field shielding effects and thus help in optimizing the emitted current density.

  • Cooling systems for advanced vacuum electron sources

    The precise and reliable cooling system for Vacuum Electron Sources at AREAL linear accelerator has been developed. The cooling system provides high accuracy temperature stability for accelerator components.

  • A General Thermal-Field Emission Equation

    A general emission equation, which contains as its asymptotic limits both the Richardson (thermal emission) and the Fowler Nordheim (field emission) equations, is developed. The general thermal-field equation performs over a range of temperatures, fields, and work function values where the asymptotes are degraded

  • Special features of electron sources with CNT field emitter and micro grid

    A micro-sized electron source has been developed for new vacuum triode applications. The miniaturisation of the electron source was achieved by the use of a carbon nanotube (CNT) field emitter and a micro grid, with a distance of only some micrometers. Because of the threshold field strength for field emission of CNTs being in the range 1 to 5 V//spl mu/m, the grid voltage can be lower than 100 V. In our contribution, we discuss the influence of the micro grid on electron source properties, especially anode field penetration through the micro grid, and micro-lensing effect.

  • To the effect of space-charge field of the emitted electrons on a thermal field electron sources

    This paper presents theoretical current-voltage characteristic (CVC) calculations for the diode with a thermal field cathode bearing in mind the possible SCF effect on the emission process in high electric field (F ≥ 4 -5 V/nm) region.

  • Electron Beam Treatment Of Dielectrics By Forevacuum Plasma Electron Sources

    Summary form only given. The paper reviews results of further development and applications the so called fore-vacuum plasma electron sources for electron beam treatment of dielectrics. Because of low electrical conductivity the electron beam charges dielectric surface to the rather high negative potential. Without special procedure for electron beam charge neutralization that could provide repelling of electron beams. The fore-vacuum plasma-cathode electron sources operates under rather high pressure from few to tens Pa. Important advantages of such approach are that because of inherent charge neutralization of the non-conducting target by low energy positive ions formed in the beam plasma, there is essentially no limit to the delivered electron beam power. Because of the use of a plasma-cathode electron source the system is compatible with quite modest vacuum such as provided by mechanical pumping only. That case opens possibility for direct electron beam modification of any dielectrics materials, such as ceramics, polymers and many others. The following applications of electrons beam treatments are presented and discussed: evaporation of boron with subsequent deposition of boron-containing coatings on a titanium substrate, evaporation and deposition of aluminum oxide ceramic, deposition of Mg and Al oxide films on Si substrates by electron beam evaporation of metal target in an oxygen atmosphere as well as some other applications.

  • Special features of plasma generation and beam formation for fore-vacuum plasma electron sources

    Summary form only given. The paper reviews results of further development and applications of so called fore-vacuum plasma electron sources. The fore-vacuum pressure plasma-cathode electron sources provide efficient generation of continuous and pulsed electron beams in the otherwise inaccessible pressure range from several Pa to about one hundred Pa. Interest in the generation of electron beams at fore-vacuum pressures is dominated by the possibility of their use for surface treatment of dielectric (insulating) materials, ceramics, polymers and some others. This kind of e-beam sources utilizes either a hollow-cathode glow discharge or a cathodic arc discharge for formation of emission plasmas. Arc is mainly used for pulsed mode of electron source operation. Transition of hollow cathode glow to cathodic arc, with its associated cathode spots, follows from the need to increase the electron beam current. The papers presents some of the characteristics and parameters of a pulsed cathodic arc discharge as configured for use in a forevacuum-pressure plasma-cathode electron source for the generation of broad electron beams. Main goal of such research was achievement an uniform distribution of electron beam current density. Another subject to report is demonstration the possibility to obtain homogeneous dense beam plasma in a closed dielectric cavity using a dc forevacuum plasma electron source based on hollow cathode glow. At optimum electron energy and gas pressure, the plasma density distribution lengthwise the cavity is inhomogeneous to no more than 10 %.



Standards related to Electron Sources

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(Replaced) IEEE Standard VHDL Language Reference Manual

his standard revises and enhances the VHDL language reference manual (LRM) by including a standard C language interface specification; specifications from previously separate, but related, standards IEEE Std 1164 -1993,1 IEEE Std 1076.2 -1996, and IEEE Std 1076.3-1997; and general language enhancements in the areas of design and verification of electronic systems.


IEEE Application Guide for Distributed Digital Control and Monitoring for Power Plants


IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for System Identification in Nuclear Power Plants and Related Facilities


IEEE Standard for Radio-Frequency Energy and Current-Flow Symbols

Description of warning symbols for radio frequency radiation and radio frequency induced and contact currents in the frequency range of 3 kHz to 300 GHz.


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Jobs related to Electron Sources

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