Conferences related to Quantum Devices

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2021 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2017 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


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Periodicals related to Quantum Devices

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Quantum Devices

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Xplore Articles related to Quantum Devices

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New frontiers in InP based quantum devices

2008 20th International Conference on Indium Phosphide and Related Materials, 2008

Recent research activities taking place at center for quantum devices (CQD) based on InP material system, especially the exploration and demonstration of the state-of-art high performance quantum cascade lasers (QCL), greatly facilitate the understanding of the underlining physical principles governing the device operation. Thanks to the endless effort putting into the semiconductor epitaxy technologies, including the Molecular Beam Epitaxy (MBE) ...


Current Status of High Performance Quantum Cascade Lasers at the Center for Quantum Devices

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007

Mid-infrared laser sources are highly desired for laser-based trace chemical sensors, military countermeasures, free-space communications, as well as developing medical applications. While application development has been limited by the availability of adequate mid-infrared sources, InP-based quantum cascade lasers (QCLs) hold promise as inexpensive, miniature, portable solutions capable of producing high powers and operating at high temperatures with excellent beam quality ...


Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material

2009 IEEE Nanotechnology Materials and Devices Conference, 2009

Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and ...


Stability of Al-Mn Transition Edge Sensors for Frequency Domain Multiplexing

IEEE Transactions on Applied Superconductivity, 2011

We are developing arrays of 150 GHz transition edge sensor (TES) polarimeters for the South Pole Telescope polarimeter (SPTpol). Prototype devices use an aluminum manganese (Al-Mn) alloy TES with a normal resistance R<sub>n</sub> suited to frequency domain multiplexing (fMUX) used in SPTpol. Using the fMUX readout, the devices exhibit noise performance consistent with expectations when R &gt;; 0.8R<sub>n</sub>. Below 0.8R<sub>n</sub>, ...


Highly reliable high performance waveguide-integrated InP/InGaAs pin photodiodes for 40 Gbit/s fibre-optical communication application

Electronics Letters, 2003

Waveguide-integrated pin photodiodes (WGpinPDs) planar-embedded by a semi- insulating (SI) InP buried layer exhibit very stable dark current characteristics after aging tests for over 8000 h at 175/spl deg/C with a bias voltage of -10 V. A wear-out failure rate of much less than 1 failure in time (FIT) after 25 years of operation at 40/spl deg/C was primarily estimated. ...


More Xplore Articles

Educational Resources on Quantum Devices

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IEEE.tv Videos

Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Part 2: Workshop on Benchmarking Quantum Computational Devices and Systems - ICRC 2018
Quantum Technologies in Europe: The Quantum Flagship Initiative - Applied Superconductivity Conference 2018
Developing Our Quantum Future - Krysta Svore Keynote - ICRC San Mateo, 2019
Discussion: Workshop on Benchmarking Quantum Computational Devices and Systems - ICRC 2018
Electric-field Bit Write-in for Molecular Quantum-dot Cellular Automata - Enrique Blair - ICRC 2018
D-Wave Quantum Computer: Technology Update - Fabio Altomare - ICRC San Mateo, 2019
Part 3: Workshop on Benchmarking Quantum Computational Devices and Systems - ICRC 2018
Q&A with Anastasiia Butko: IEEE Rebooting Computing Podcast, Episode 25
Quantum Annealing: Current Status and Future Directions - Applied Superconductivity Conference 2018
Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
Shaping the Future of Quantum Computing - Suhare Nur - ICRC San Mateo, 2019
Part 1: Workshop on Benchmarking Quantum Computational Devices & Systems - ICRC 2018
SDRJ: Small to Large Scale Quantum Computational Systems - Kae Nemoto at INC 2019
Cryogenic Electronics & Quantum Information Processing: International Roadmap for Devices and Systems
IRDS: IFT Cryogenic Electronics & Quantum Information Processing - Scott Holmes at INC 2019
Demonstrating Scalable Benchmarking for Quantum Computing - Timothy Proctor - ICRC San Mateo, 2019
IEEE Industry Summit Welcoming Remarks & ICRC Readout - ICRC San Mateo, 2019
IRDS Highlights & Future Directions - Paolo Gargini - ICRC San Mateo, 2019
Overview of SDRJ - Yoshihiro Hayashi at INC 2019

IEEE-USA E-Books

  • New frontiers in InP based quantum devices

    Recent research activities taking place at center for quantum devices (CQD) based on InP material system, especially the exploration and demonstration of the state-of-art high performance quantum cascade lasers (QCL), greatly facilitate the understanding of the underlining physical principles governing the device operation. Thanks to the endless effort putting into the semiconductor epitaxy technologies, including the Molecular Beam Epitaxy (MBE) and low pressure metal organic chemical vapor deposition (LP-MOCVD), the world has seen a close approaching to the ultimate ldquoband gap engineeringrdquo. Highly sophisticated manmade heterostructure, which incorporates hundreds of alternating layers of GaInAs/AlInAs with each layer thickness and composition specifically designed, can be created within a single growth. The material quality is evidenced by the atomically abrupt interfaces. The versatility of the ldquoband gap engineeringrdquo is greatly enhanced by the strain-balanced technique, which allows for growing structures with continuously tunable conduction band offset with little defects. As a result, the room temperature continuous wave (cw) wall plug efficiency (WPE) and the maximum achievable output optical power from a single device have been constantly improving. Novel waveguide incorporating the photonic crystal distributed feedback (PCDFB) mechanism is also investigated with satisfactory preliminary results.

  • Current Status of High Performance Quantum Cascade Lasers at the Center for Quantum Devices

    Mid-infrared laser sources are highly desired for laser-based trace chemical sensors, military countermeasures, free-space communications, as well as developing medical applications. While application development has been limited by the availability of adequate mid-infrared sources, InP-based quantum cascade lasers (QCLs) hold promise as inexpensive, miniature, portable solutions capable of producing high powers and operating at high temperatures with excellent beam quality and superior reliability. This paper discusses the most recent developments of application-ready high power (&gt; 100 mW), continuous-wave (cw), mid-infrared QCLs operating above room temperature with lifetimes exceeding 13,000 hours.

  • Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material

    Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.

  • Stability of Al-Mn Transition Edge Sensors for Frequency Domain Multiplexing

    We are developing arrays of 150 GHz transition edge sensor (TES) polarimeters for the South Pole Telescope polarimeter (SPTpol). Prototype devices use an aluminum manganese (Al-Mn) alloy TES with a normal resistance R<sub>n</sub> suited to frequency domain multiplexing (fMUX) used in SPTpol. Using the fMUX readout, the devices exhibit noise performance consistent with expectations when R &gt;; 0.8R<sub>n</sub>. Below 0.8R<sub>n</sub>, the detectors have high loopgain and become unstable, which is predicted by use of a compound TES model. We address this issue in a recent fabrication with increased TES heat capacity and normal metal structures on the TES to tune the temperature sensitivity.

  • Highly reliable high performance waveguide-integrated InP/InGaAs pin photodiodes for 40 Gbit/s fibre-optical communication application

    Waveguide-integrated pin photodiodes (WGpinPDs) planar-embedded by a semi- insulating (SI) InP buried layer exhibit very stable dark current characteristics after aging tests for over 8000 h at 175/spl deg/C with a bias voltage of -10 V. A wear-out failure rate of much less than 1 failure in time (FIT) after 25 years of operation at 40/spl deg/C was primarily estimated. Stable operation for over 5000 h were also confirmed under high power optical input aging test at an atmosphere temperature of 85/spl deg/C. For the optical receiver module using the WGpinPD and a GaAs pHEMT travelling wave amplifier (TWA), a recorded minimum received power of -11.2 dBm at 40 Gbit/s was obtained for the first time.

  • Wide bandwidth, high performance waveguide-integrated P-I-N photodiodes for 40 Gbits/s receiver modules

    A side-illuminated waveguide integrated PIN photodiode (WG PIN PD) has been developed and modeled for use in 40 Gb/s PIN/preamp receiver module. The WG PIN PD exhibited a wide bandwidth over 40 GHz with a high responsivity. For the PIN/preamp modules with a GaAs pHEMT traveling wave amplifier (TWA), a clear eye-opening was observed and a recorded minimum received power of -11.2 dBm at 40 Gb/s was obtained for the first time.

  • Design and Performance of Kilo-Pixel TES Arrays for ACTPol

    ACTPol, a polarization sensitive receiver for the Atacama Cosmology Telescope, is designed to make sensitive maps of the cosmic microwave background anisotropies at arcminute scales and millimeter wavelengths by employing three arrays of superconducting transition edge sensor (TES) detectors. The ACTPol TES bolometers have a target superconducting transition temperature of 150 mK and will be cooled to a bath temperature of 100 mK with a dilution refrigerator enabling increased array sensitivity. Each array will consist of ~1000 TES detectors coupled to a micromachined silicon feedhorn stack via superconducting ortho-mode transducers and transmission lines. The superconducting detectors of the first ACTPol array have been characterized in their final receiver configuration with measurements of key TES parameters including the transition temperature, saturation power, and thermal conductance.

  • A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications

    A high power and high gain packaged power MMIC module for Ka-band applications operating under a single polarity bias supply has been developed for the first time. This PA module consists of two pseudomorphic HEMT MMICs, with Lg=0.25um, packaged in a single power module. These MMICs operate without a gate bias control voltage when the gate bias is shunted in the package. This PA module provides 30dBm output power and approximately 30dB of gain in the 27-31GHz range. The single bias supply operation provides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate control bias network.

  • A time multiplexed architecture for neural networks using quantum devices

    An architecture is proposed which addresses the interconnection problem associated with large scale hardware-based neural networks. A design using silicon based quantum devices with MOS/CMOS devices is described and compared to a design based on conventional devices. The time multiplexed architecture sequentially connects each of the inputs to the next layer in a fully connected neural network.

  • Branching, coexistence and collapse of inversion states in solid-state microwave quantum devices

    Investigation of dynamical processes in microwave laser-like quantum devices is of great interest because of extremely low level of intrinsic noises (spontaneous emission) in their active media. One of the most interesting features of laser dynamics is branching of nonequilibrium states in dissipative system, which includes active medium and resonators, tuned to the frequencies of pumping and signal fields. The pointed branching leads to coexistence of various, sometimes very complex forms of regular, chaotic and transient inversion states. Understanding of the nature of inversion formation and evolution is of vital importance to the quantum electronics. In this report, we present results of investigations of microwave power spectra (MPS) and spatiotemporal dynamics (STD) concerning on the relationship between complex fine structure of MPS and corresponding evolution of patterns in STD.



Standards related to Quantum Devices

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Health Informatics - Personal Health Device Communication - Part 10441: Device Specialization - Cardiovascular Fitness and Activity Monitor

Within the context of the ISO/IEEE 11073 family of standards for device communication, this standard establishes a normative definition of the communication between personal cardiovascular fitness and activity monitoring devices and managers (e.g. cell phones, personal computers, personal health appliances, set top boxes) in a manner that enables plug-and-play interoperability. It leverages appropriate portions of existing standards including ISO/IEEE 11073 ...


IEEE Application Guide for Low-Voltage AC Power Circuit Breakers Applied with Separately-Mounted Current-Limiting Fuses

This guide applies to low-voltage ac power circuit breakers of the 635 V maximum voltage class with separately-mounted current-limiting fuses for use on ac circuits with available short-circuit currents of 200 000 A (rms symmetrical) or less. Low-voltage ac fused power circuit breakers and combinations of fuses and molded-case circuit breakers are not covered by this guide. This guide sets ...


IEEE Standard for Information Technology - POSIX Ada Language Interfaces - Part 1: Binding for System Application Program Interface (API)

This document is part of the POSIX series of standards for applications and user interfaces to open systems. It defines the Ada language bindings as package specifications and accompanying textual descriptions of the applications program interface (API). This standard supports application portability at the source code level through the binding between ISO 8652:1995 (Ada) and ISO/IEC 9945-1:1990 (IEEE Std 1003.1-1990 ...


IEEE Standard for Local and metropolitan area networks - Secure Device Identity

This standard specifies unique per-device identifiers (DevID) and the management and cryptographic binding of a device to its identifiers, the relationship between an initially installed identity and subsequent locally significant identities, and interfaces and methods for use of DevIDs with existing and new provisioning and authentication protocols.


IEEE Standard for Low-Voltage AC Power Circuit Breakers Used in Enclosures

The scope of this standard includes the following enclosed low-voltage ac power circuit breakers: a) Stationary or drawout type of two-, three-, or four-pole construction with one or more rated maximum voltages of 635 V (600 V for units incorporating fuses), 508 V, and 254 V for application on systems having nominal voltages of 600 V, 480 V, and 240 ...


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Jobs related to Quantum Devices

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