Conferences related to Aluminum Oxide Films

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 11th International Memory Workshop (IMW)

The IMW is a unique forum for specialists in all aspects of memory (nonvolatile & volatile)microelectronics and people with different backgrounds who wish to gain a better understandingof the field. The morning and afternoon technical sessions are organized in a manner thatprovides ample time for informal exchanges amongst presenters and attendees. The eveningpanel discussions will address hot topics in the memory and memory system field. Papers aresolicited in all aspects of semiconductor memory technology (Flash, DRAM, SRAM, PCRAM,RRAM, MRAM, embedded memory, and other NV memories).


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Periodicals related to Aluminum Oxide Films

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Aluminum Oxide Films

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Xplore Articles related to Aluminum Oxide Films

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Recent developments on formation of ordered aluminum oxide films for photonic crystals application

Proceedings of 2005 7th International Conference Transparent Optical Networks, 2005., 2005

The latest results on fabrication of ordered aluminum oxide nanopore arrays with interpore distance of submicrometer and micrometer scale - prerequisites for two dimensional photonic crystals - formed by prepatterning via interference lithography and subsequent electrochemical anodization are presented. Two illustrative samples of the range of 700-800 nm and 1.5 /spl mu/m were analysed. The view of prepatterned surface together ...


In situ XPS investigation of the chemical surface composition during the ALD of ultra-thin aluminum oxide films

2011 Semiconductor Conference Dresden, 2011

Atomic layer deposition (ALD) is the most advanced technique for the fabrication of ultra-thin conformal films. To yield high quality films, the knowledge of chemical reactions and interactions between the substrate surface and the precursors is becoming increasingly important, especially within the very first ALD cycles. In this work, the ALD process of aluminum oxide with trimethylaluminum (TMA) and water ...


Optical switching of porous anodic aluminum oxide films embedded with silver nanoparticles

10th IEEE International Conference on Nanotechnology, 2010

Dielectric films embedded with two-dimensional (2-D) arrays of metal nanoparticles have been fabricated by electro deposition of silver into nanopores of anodic aluminum oxide (AAO) films. Their pore diameter and inter- pore spacing are 80 nm and 20 nm, respectively. With its photoconductivity, the specimen has a higher conductance when being illuminated by a 514 nm wavelength laser. This photoconductivity ...


Effect of Deposition Temperature on Plasma Grown Aluminum Oxide Films

ESSDERC '88: 18th European Solid State Device Research Conference, 1988

The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films, The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up ...


Effect of ALD reactants on blistering of aluminum oxide films on crystalline silicon

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013

Atomic layer deposited aluminum oxide (Al2O3) has in recent years proven to be a promising surface passivation material for crystalline silicon solar cells. However, blistering in Al2O3films is a common problem deteriorating the surface passivation quality. Here, blistering is studied from material aspects including film thickness, film composition and postdeposition heat treatment. We show how thicker films, higher annealing temperatures ...


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Educational Resources on Aluminum Oxide Films

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IEEE.tv Videos

ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 1 of 7 - Gordon Donaldson: A Memory - part I - John Clarke
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 2 of 7 - Gordon Donaldson: A Memory - part II - Colin Pegrum
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Resistive Coupled VO2 Oscillators for Image Recognition - Elisabetta Corti - ICRC 2018
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
Perpendicular magnetic anisotropy: From ultralow power spintronics to cancer therapy
The Josephson Effect: The Observations of Josephson's Effects
Fast Scale Prototyping for Folded Millirobots
Millimeter-Wave Bandpass Filter Using High-Q Conical Inductors and MOM Capacitors: RFIC Interactive Forum
35 Years of Magnetic Heterostructures
IEEE Magnetics Distinguished Lecture - Alison B. Flatau
The Josephson Effect: The Original SQUIDs
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
International Broadcast Conference(IBC) News: Segment 4
Magnetic Materials and Magnetic Devices - Josep Fontcuberta: IEEE Magnetics Distinguished Lecture 2016
Nanotechnology For Electrical Engineers
IEEE-HKN presents: Engineering - The Challenge of the Future
Brooklyn 5G Summit: Expanding the Human Possibilities with 5G
Is the Future of Humanity Bionic? - IEEE TechEthics Virtual Panel
Robot Storytelling for Ethical Origins, Services, and Futures: IEEE TechEthics Featured Talk with Heather Knight

IEEE-USA E-Books

  • Recent developments on formation of ordered aluminum oxide films for photonic crystals application

    The latest results on fabrication of ordered aluminum oxide nanopore arrays with interpore distance of submicrometer and micrometer scale - prerequisites for two dimensional photonic crystals - formed by prepatterning via interference lithography and subsequent electrochemical anodization are presented. Two illustrative samples of the range of 700-800 nm and 1.5 /spl mu/m were analysed. The view of prepatterned surface together with the bottom view revealed formation of perfectly ordered structure of aluminum oxide. In comparison to our successful former method via two-step imprint by gratings, the technique of interference lithography developed in this work demonstrated less qualitative results.

  • In situ XPS investigation of the chemical surface composition during the ALD of ultra-thin aluminum oxide films

    Atomic layer deposition (ALD) is the most advanced technique for the fabrication of ultra-thin conformal films. To yield high quality films, the knowledge of chemical reactions and interactions between the substrate surface and the precursors is becoming increasingly important, especially within the very first ALD cycles. In this work, the ALD process of aluminum oxide with trimethylaluminum (TMA) and water is studied by using X-ray photoelectron spectroscopy (XPS) without vacuum break. This allows the investigation of the initial gaseous-solid-reactions, i. e. the chemisorption mechanism of the precursor molecules, with sub-monolayer resolution. The results show the ligand exchange during the ALD reactions and the dependence of the growth mode on the presence of hydroxyl groups and oxygen as adsorption sites on the substrate surface.

  • Optical switching of porous anodic aluminum oxide films embedded with silver nanoparticles

    Dielectric films embedded with two-dimensional (2-D) arrays of metal nanoparticles have been fabricated by electro deposition of silver into nanopores of anodic aluminum oxide (AAO) films. Their pore diameter and inter- pore spacing are 80 nm and 20 nm, respectively. With its photoconductivity, the specimen has a higher conductance when being illuminated by a 514 nm wavelength laser. This photoconductivity can be explained by improved electron transport due to plasmonic coupling among neighboring silver nanoparticles induced by light illumination. The 2-D photoconductivity is expected to enable applications which are not suitable for one-dimensional photoconductivity induced by plasmonic coupling of nanoparticles embedded in nanowires. The 2-D photoconductivity of metal-nanoparticle-embedded dielectric films are expected to facilitate optoelectronic integrated circuits in the future.

  • Effect of Deposition Temperature on Plasma Grown Aluminum Oxide Films

    The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films, The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up to 300°C) gives lower flat band voltage, lower hysteresis which indicates a lowering of the free charges in the oxide.

  • Effect of ALD reactants on blistering of aluminum oxide films on crystalline silicon

    Atomic layer deposited aluminum oxide (Al2O3) has in recent years proven to be a promising surface passivation material for crystalline silicon solar cells. However, blistering in Al2O3films is a common problem deteriorating the surface passivation quality. Here, blistering is studied from material aspects including film thickness, film composition and postdeposition heat treatment. We show how thicker films, higher annealing temperatures and longer annealing times lead to more severe blistering and demonstrate how blistering can be avoided by using either O3as the oxidant or depositing a thin TiO2layer at the silicon interface.

  • RF magnetron sputtered aluminum oxide films for MEMS

    In the present work, aluminum oxide (AL<sub>2</sub>O<sub>3</sub>) films have been investigated as an alternative structural material for micro-electro- mechanical-systems (MEMS). The AL<sub>2</sub>O<sub>3</sub> films were prepared by RF magnetron sputtering process and characterized. These were used as structural layers for fabricating basic microstructure elements such as cantilever beams, micro-bridges etc. XRD study of films revealed that annealing of films significantly changed their crystal structure and formed both alpha- and gamma- crystalline phases simultaneously. Stress in AL<sub>2</sub>O<sub>3</sub> film deposited at optimized parameters, was measured to be compressive in nature. Atomic force microscopy (AFM) revealed the RMS value of the surface roughness of as-deposited films to be 1.04 nm, which increased to 5.49 nm on post-deposition annealing at 1000 degC. To show the feasibility of this material for MEMS applications, 2 mum thick single cantilever beams as well as array of cantilever beams were fabricated successfully using bulk micromachining process. These basic microstructures can be used in different applications for MEMS.

  • Low Cost, High Density Interposers in Aluminum Oxide Films

    In this paper, anodic aluminum oxide (AAO) is introduced as a potential new material for making interposers, and a low cost process for building high density interposers is demonstrated. Hard anodic process was used to create thick anodic aluminum oxide (AAO) films containing high density vertical nanopores on aluminum substrates. Silicon dioxide (SiO<sub>2</sub>) deposition by plasma enhanced chemical vapor deposition (PECVD) was performed to form a hard mask against deep etching by a hydroxide based solution. Wet hydroxide etch produced nearly vertical openings in the AAO due to the highly anisotropic nature of the AAO material. Vias were metallized by bottom-up copper electroplating directly from the aluminum substrate, which acted as both a structural material and a seed layer for electroplating. After via plating, the top surface was polished to reach submicron surface roughness, the bottom surface was polished after etching away the aluminum carrier substrate to produce a final AAO interposer. This interposer benefits from high density vertical vias, low cost, and ease of manufacture.

  • RF sputter-deposited aluminum-oxide films as high quality artificial tunnel barriers

    We report on the results of fabricating artificial tunnel barriers by the simple method of direct sputtering of an aluminum-oxide (Al2O3) target. These barriers have been studied by preparing tunnel junctions of the form: Cu/AlOx/C.E., with aluminum-oxide layers ranging in thickness from 8 to 20 Å and counter-electrodes (C.E.) of Cu, Pb and PbBi. We have found that barriers with exceptionally large effective barrier heights, in excess of 2eV, and low zero-bias conduction, less than 0.4% leakage, can be reliably obtained by this method. We discuss the fabrication of these barriers and the systematics of both the effective (WKB) barrier shape, and superconducting and normal-state tunneling characteristics as a function of the measured barrier film thickness. X-ray photoelectron spectroscopy (XPS) studies on sputter-deposited aluminum-oxide films indicate the single composition, namely Al2O3. This method should prove universally applicable for depositing very high quality tunnel barriers.

  • Intermodulation generation by electron tunneling through aluminum-oxide films

    The generation of intermodulation (IM) interference by nonlinear conduction mechanisms in normally passive hardware components can lead to severe degradation in the performance of multi-carrier communication systems in satellites, space probes, and ship-board systems. This paper describes an investigation of the generation of IM due to nonlinear conduction by electron tunneling through aluminum-oxide films. Details are presented regarding the fabrication of Al-Al<inf>2</inf>O<inf>3</inf>-Al junctions, the current- voltage and capacitance characteristics, and the measurement of IM power levels. The IM is correlated with the junction circuit parameters and with tunneling theory. Results are also presented on preliminary experiments to beneficially modify such nonlinear conduction by implantation of metallic ions in the oxide film.

  • Advanced electrical characterization of atomic layer deposited Al2O3MIS-based structures

    The electrical properties of Al2O3-based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as aluminum and oxygen precursors, respectively. The use of aluminum as the gate electrode prevents the formation of defects inside the oxide layers that could trap charge as has been found for W and TiN gate electrodes using C-V curves and flat band voltage transients. The use of TiN or W as gate electrodes increases the interfacial trap density. However, the leakage current, that follows a Fowler-Nordheim behavior, is low when using TiN electrodes due to a higher cathode barrier height.



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