IEEE Organizations related to Nano-crystal Memory

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Conferences related to Nano-crystal Memory

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 Silicon Nanoelectronics Workshop (SNW)

-Sub-10 nm transistors employing conventional and novel architecture including non-classical structures, novel channel and source/drain materials, non-thermal injection mechanisms- Device physics of nanodevices including quantum effects, nonequilibrium and ballistic transport- Modeling and simulation of nanoscale devices- Device scaling issues including doping fluctuations and atomic granularity- Novel devices and architectures for quantum and neuromorphic computing - Optoelectronics using silicon nanostructures- Devices for heterogeneous integration on silicon, including 2D materials, Ge and III-V, CNT, spin-based devices, MEMS and NEMS- Environmental devices which contributes to low-carbon society (wireless sensors, energy harvesters, steep slope devices)


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM


2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

Covers all electronic materials and devices fields that involve nanotechnology

  • 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)

    This conference serves as a perfect platform on which scientists and engineers can present and highlight some of the key advances in the research topics relevant to nanoscience and nanotechnology.

  • 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE NMDC 2016 aims to foster communication between physicists, chemists, microbiologists and engineers from academics and industry, interested in nanodevices and nanostructured materials, advanced preparation techniques, new material properties, standards and safety issues of nanotechnology, in computer simulations and theoretical work. Interdisciplinary exchange between scientists and contributions from industrial researchers will stimulate gather knowledge and help inspire a new perspective in industrial applications on this exciting area.

  • 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2015 is the 10th Nanotechnology Materials and Devices Conference. Published papers in the conference will be indexed at IEEExplore. A contest for the best paper award will be held and awards will be given at the end of the conference. Authors of the best papers of each track will be invited to submit their extended article version to: IEEE Transactions on Nanobioscience, IEEE Nanotechnology Magazine, and IEEE Transaction on Nanotechnology.

  • 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2014 wants to be a forum of discussion about nanotechnology, with a special focus on materials and devices. Topics:-Graphene and carbon nanotubes based materials and devices-Materials and devices for nanoelectronics-Materials and devices for energy and environmental applications-Nanostructures for future generation solar cells-Ion beam synthesis and modification of nanostructures-Advanced characterization of nanomaterials and nanostructures-Modeling and simulation of nanomaterials, structures, and devices-Metamaterials and plasmonic devices-Photonic materials and devices-Organic semiconductor materials, devices and applications-Nanostructures of oxide semiconductor materials-III-V semiconductors nanomaterials-Nanostructures for water purification-Nanomaterials and devices for biomedical applications-Standards and safety issues of nanotechnology-Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

  • 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)

  • 2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

    Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


2018 International Conference on Network Infrastructure and Digital Content (IC-NIDC)

Themed as "AI & ICT Drive New Growth", IC-NIDC 2018 will feature a comprehensive technical program including several Symposia and a number of Tutorials and Workshops. This conference provides a high-quality forum for researchers and practitioners to present their latest theoretical and practical work on the cutting edge technologies and hot topics in the areas of Artificial Intelligence & Computational Intelligence, Cloud Communications & Cybersecurity, and Innovative Multimedia Systems.

  • 2016 IEEE International Conference on Network Infrastructure and Digital Content (IC-NIDC)

    A.Software Defined Networking (SDN) and Network Function Virtualization (NFV)Centralized vs Distributed control of SDN/NFV-based systemsSDN switch/router architectures/designsNetwork Softwarization for 5GMobility/Security/Safety support for SDNResource management and Orchestration for SDN/NFV-based systemsB.Broadband Wireless CommunicationsCommunication QoS, Reliability & ModelingSensor array and multichannel signal processingSignal processing for communications and networkingScalable and flexible energy efficiency network architecturesTraffic measurement, analysis and controlC.Big Data & Cloud ComputingCloud computing programming and application developmentClient-cloud computing challengesPerformance and QoS in Cloud ComputingAudio and acoustic signal processingImage, video and multidimensional signal processingD.Sensing, Smart Spaces, and Internet of Things (IoT)IoT paradigms, systems, components, architectures, applicationsM2M and D2D communications in smart spac

  • 2014 4th IEEE International Conference on Network Infrastructure and Digital Content (IC-NIDC)

    Research and development on wireless communication technology have been carried out in last few years and some of them have been successfully deployed and used in people

  • 2012 3rd IEEE International Conference on Network Infrastructure and Digital Content (IC-NIDC 2012)

    Prospective authors are invited to submit original technical papers in, but not limited to, the following areas: A. Network convergence B. Internet of things C. Digital content technology D. Semiconductor and intelligent display E. Broadband network

  • 2010 2nd IEEE International Conference on Network Infrastructure and Digital Content (IC-NIDC 2010)

    This conference is dedicated to addressing an in-depth study on the cutting edge technologies and hot topics in the areas of network infrastructure and digital content. It will provide a high-quality forum for researchers and practitioners to present their latest theoretical and practical work in this rapidly-changing area.

  • 2009 IEEE International Conference on Network Infrastructure and Digital Content (IC-NIDC 2009)

    This conference is dedicated to addressing an in-depth study on the cutting edge technologies and hot topics in the areas of network infrastructure and digital content. It will provide a high-quality forum for researchers and practitioners to present their latest theoretical and practical work in this rapidly-changing area.


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Periodicals related to Nano-crystal Memory

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Nano-crystal Memory

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Xplore Articles related to Nano-crystal Memory

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Integration of fluorinated nano-crystal memory cells with 4.6F/sup 2/ size by landing plug polysilicon contact and direct-tungsten bitline

IEEE International Electron Devices Meeting 2003, 2003

This paper reports the first full process integration of nano-crystal memory (NCM) with 4.6F/sup 2/ cell (size: 0.0777 /spl mu/m/sup 2/) based on NOR type, which is achieved by landing plug polysilicon contact (LPC) and direct tungsten (W) bitline (BL). Robust 4-threshold voltage (VT) states for 2 bits operation per cell are verified. Also, the comparable characteristics to NCM with ...


Characteristics of P-channel Si nano-crystal memory

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030), 1999

The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics, since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, N-channel nano-crystal memory has been reported to have good characteristics compared to EEPROM. In this paper, the characteristics of the P-channel nano-crystal memory, which stores holes as information, ...


Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361), 1999

The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, p-channel nano-crystal memory, which stores holes instead of electrons as the information, has been reported to have good characteristics compared with EEPROM. In this paper, the characteristics of ...


Room temperature single electron effects in a Si nano-crystal memory

IEEE Electron Device Letters, 1999

An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano- crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5/spl times/10/sup 11//cm/sup 2/ were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For ...


The p-channel Si nano-crystal memory

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001

The feasibility of p-channel nano-crystal memory is demonstrated. The programming mechanism of p-channel nano-crystal memory was investigated by charge separation measurement. For small programming voltage, hole tunneling is dominant. However, valence band electron tunneling becomes dominant for large voltage.


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Educational Resources on Nano-crystal Memory

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IEEE-USA E-Books

  • Integration of fluorinated nano-crystal memory cells with 4.6F/sup 2/ size by landing plug polysilicon contact and direct-tungsten bitline

    This paper reports the first full process integration of nano-crystal memory (NCM) with 4.6F/sup 2/ cell (size: 0.0777 /spl mu/m/sup 2/) based on NOR type, which is achieved by landing plug polysilicon contact (LPC) and direct tungsten (W) bitline (BL). Robust 4-threshold voltage (VT) states for 2 bits operation per cell are verified. Also, the comparable characteristics to NCM with conventional silicide BL contact are obtained and NCM reliability is significantly improved by properly fluorinated effect while still keeping process compatibility and controllability, which is the only alternative for volume manufacture of high density NCM.

  • Characteristics of P-channel Si nano-crystal memory

    The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics, since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, N-channel nano-crystal memory has been reported to have good characteristics compared to EEPROM. In this paper, the characteristics of the P-channel nano-crystal memory, which stores holes as information, is presented for the first time.

  • Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory

    The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, p-channel nano-crystal memory, which stores holes instead of electrons as the information, has been reported to have good characteristics compared with EEPROM. In this paper, the characteristics of tunneling oxide and tunneling ON is compared for p-channel nano-crystal memory.

  • Room temperature single electron effects in a Si nano-crystal memory

    An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano- crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5/spl times/10/sup 11//cm/sup 2/ were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.

  • The p-channel Si nano-crystal memory

    The feasibility of p-channel nano-crystal memory is demonstrated. The programming mechanism of p-channel nano-crystal memory was investigated by charge separation measurement. For small programming voltage, hole tunneling is dominant. However, valence band electron tunneling becomes dominant for large voltage.

  • Characteristics of p-channel Si nano-crystal memory

    The feasibility of p-channel nano-crystal memory is demonstrated. The programming mechanism of p-channel nano-crystal memory was investigated by charge separation measurement. For small programming voltage, hole tunneling is dominant. However, valence band electron tunneling becomes dominant for large voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

  • Programming characteristics of p-channel Si nano-crystal memory

    In this work, the programming characteristics of a p-channel nano-crystal memory is studied. The hole tunneling component from the inversion layer and the electron tunneling component from the valence band in the nano-crystal were separated successfully by independent measurement of the current at the body terminal and at the source/drain terminal of the memory. For small gate voltage, the hole tunneling current is dominant during programming. However, for large programming voltage, the valence band electron tunneling from the dot into the substrate becomes dominant. Finally, the comparison of retention characteristics between programmed holes and electrons shows that holes have longer retention time.

  • Characteristics of p-channel Si nano-crystal memory

    In this work, the feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. By comparing the programming characteristics of devices with nano-crystals and devices without nano- crystals, the role of dots as storage node is presented. The programming and erasing mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. In case of erasing, the electron tunneling occurs from either the conduction band or the valence band. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

  • Nano Crystal Memory Devices Characterization Using the Charge Pumping Technique

    None

  • Technology And Power-speed Trade-offs In Quantum-dot And Nano-crystal Memory Devices

    None



Standards related to Nano-crystal Memory

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