IEEE Organizations related to Mosfet

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Conferences related to Mosfet

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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)

ISIE focuses on advancements in knowledge, new methods, and technologies relevant to industrial electronics, along with their applications and future developments.


2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID)

This conference is a forum for researchers and designers to present and discuss variousaspects of VLSI design, EDA, embedded systems, and enabling technologies. The program willconsist of regular paper sessions, special sessions, embedded tutorials, panel discussions,design contest, industrial exhibits and tutorials. This is the premier conference/exhibition in thisarea in India, attracting designers, EDA professionals, and EDA tool users. The programcommittee for the conference has a significant representation from the EDA researchcommunity and a large fraction of the papers published in this conference are EDA-related


2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Computer in Technical Systems, Intelligent Systems, Distributed Computing and VisualizationSystems, Communication Systems, Information Systems Security, Digital Economy, Computersin Education, Microelectronics, Electronic Technology, Education


2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This is a set of five conferences with a focus on wireless components, applications and systems that affect both now and our future lifestyle. The main niche of these conferences is to bring together technologists, circuit designers, system designers and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems. This is also an area where today's design compromises can trigger tomorrow's advanced technologies, where dreams can become a reality.


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Periodicals related to Mosfet

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Xplore Articles related to Mosfet

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A smart power IC for high side driver applications

Euro ASIC '91, 1991

New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure ...


Power n-MOSFET Design for a 40-V 192-Element Thermal ink Jet IC

50th Annual Device Research Conference, 1992

None


Charge Pumping Technique

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It ...


Monolithic IC power switch for automotive applications

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1986

None


Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

2013 23rd International Crimean Conference "Microwave & Telecommunication Technology", 2013

The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC' elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors' parameters is carried out.


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Educational Resources on Mosfet

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IEEE-USA E-Books

  • A smart power IC for high side driver applications

    New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure at system level. This paper also presents the new power BICMOS technology used for this design.<>

  • Power n-MOSFET Design for a 40-V 192-Element Thermal ink Jet IC

    None

  • Charge Pumping Technique

    This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily anticipated that the impact of Lubistor operation on the charge pumping phenomenon is most critical when the SOI layer thickness is less than 10 nm because the energy levels of the SOI layer are definitely quantized. This is one of the challenging research issues with the charge pumping technique. In the following, we examine how to apply the charge pumping technique to the characterization of the two interfaces of an SOI MOSFET with a thick SOI layer.

  • Monolithic IC power switch for automotive applications

    None

  • Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

    The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC' elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors' parameters is carried out.

  • Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs

    This paper discusses issues concerning single-event burnout (SEB) and single- event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs' SEB susceptibilities, describes how to correctly identify SEB and SEGR failure modes to derive the most feasible failure mechanisms.

  • A low-voltage power MOSFET with a fast-recovery body diode for synchronous rectification

    A power MOSFET suitable for synchronous rectification in 1-10 MHz switching power supplies is presented. Three device structures are compared to find the lowest on-state resistance, off-state capacitance product. The lightly doped drain region typical of most power MOSFETs is removed to give a body diode with a 1 ns reverse recovery time. Both of these types are needed for efficient operation at high frequencies. Process details and experimental results are also discussed.<>

  • An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)

    The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of the anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits and for different IGBT base lifetimes. The effective output capacitance of the IGBT at turn-off is several orders of magnitude larger than that of the structurally equivalent power MOSFET and depends upon the device base lifetime because the base charge at turn-off depends upon the device base lifetime. However, the gate drain feedback capacitance is unchanged from the value for the structurally equivalent power MOSFET. Thus, the minimum gate resistance that influences the anode voltage rate-of-rise at turn-off is several orders of magnitude larger than that for the power MOSFET and varies with device base lifetime.<>

  • How to include the dependency of the R/sub DS(on/) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters

    In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors.

  • Performance requirements for power MOSFET models

    The power MOSFET model performance required for accurate waveform simulation is evaluated for most power converter circuits. Three models are thoroughly evaluated through C-V plots, gate charge plots and power converter data. A procedure is given for evaluating any proprietary model using data book information with three simple simulations.



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