IEEE Organizations related to Ballistic Transport

Back to Top

No organizations are currently tagged "Ballistic Transport"



Conferences related to Ballistic Transport

Back to Top

2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The ITherm Conference series is the leading international venue for scientific and engineering exploration of thermal, thermomechanical, and emerging technology issues associated with electronic devices, packages, and systems.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

electronic components, materials, packaging, integration, microfluidics, mems, sensors


2019 20th International Symposium on Quality Electronic Design (ISQED)

20th International Symposium on Quality Electronic Design (ISQED 2019) is the premier interdisciplinary and multidisciplinary Electronic Design conference?bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools, integrated circuit technologies, semiconductor technology,packaging, assembly & test to achieve design quality.


More Conferences

Periodicals related to Ballistic Transport

Back to Top

No periodicals are currently tagged "Ballistic Transport"


Most published Xplore authors for Ballistic Transport

Back to Top

Xplore Articles related to Ballistic Transport

Back to Top

Model of 1D Schottky Barrier transistors operating far from equilibrium

2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), 2009

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. An analytical model capable to describe the operation of transistors in FFE conditions would then be required in order to swiftly assess their performance and limitations. In addition, in carbon-based nanotransistors, source and drain contacts are often characterized by the formation ...


Coherent transport of hole in p type semiconductive carbon nanotube

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC., 2004

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance ...


Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

2016 IEEE Region 10 Conference (TENCON), 2016

This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano- dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained ...


Potential future generation nanoscale MOS device: Trigate (TG) or Double Gate (DG) FinFETs?

2010 3rd International Nanoelectronics Conference (INEC), 2010

Performance limit of Tri-Gate (TG) and Double Gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for ...


Influence of metallic spikes and non-uniform density of two-dimensional electron gas (2DEG) on the contact resistance to AlGaAs/GaAs heterostructures

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159), 1998

An expression for the series resistance of an HEMT has been derived, taking into account for the first time the nonuniformity of the ohmic contact interface. The penetration of the AuGeNi metallization into the 2DEG in the subcontract area (in the form deep penetrating "spikes") has been investigated and the model has been elaborated in order to determine the correct ...


More Xplore Articles

Educational Resources on Ballistic Transport

Back to Top

IEEE.tv Videos

Asynchronous Ballistic Reversible Computing: IEEE Rebooting Computing 2017
Mobile Transport for 5G RAN - Rajesh Chundury - IEEE Sarnoff Symposium, 2019
2011 IEEE Dennis J. Picard Medal for Radar Technologies and Applications - James M. Headrick
Transportation Electrification: New Stage, New Demand: Transportation in China
IEEE Themes - Efficient networking services underpin social networks
Evolution of Optical and Transport Technologies for 5G Crosshaul Networks - IEEE Future Networks Initiative webinar
The Truth About the JFK Assassination. Signal Processing Tells The Story.
IEEE in the North and South Poles (INSP) - Tony Milne - Ignite: Sections Congress 2017
An Optical Co-Processor for Large-Scale Machine Learning - Laurent Daudet at INC 2019
Airship Renaissance
Integrated Access and Backhaul - Future X Transport Panel - Brooklyn 5G Summit 2018
Interaction of ferromagnetic and superconducting permanent magnets - superconducting levitation
Ethical Considerations: A Key to Technological Advancement - IEEE TechEthics Virtual Panel
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Making of a Virtual Reality Roller Coaster
BSIM Spice Model Enables FinFET and UTB IC Design
Shaping the Future of Quantum Computing - Suhare Nur - ICRC San Mateo, 2019
Day 2, PM Sessions - Brooklyn 5G Summit 2018
Lightning Talk On Regional Status, Technologies And The Unconnected - Global Connect Stakeholders: Advancing Solutions
The Intergrid - Safe, Dependable, Sustainable: IECON 2018

IEEE-USA E-Books

  • Model of 1D Schottky Barrier transistors operating far from equilibrium

    Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. An analytical model capable to describe the operation of transistors in FFE conditions would then be required in order to swiftly assess their performance and limitations. In addition, in carbon-based nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for one-dimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Our model represents a significant advancement with respect to the currently available ideal or semi-ideal transport models. We show that the interplay of SB and ambipolar FFE transport gives rise to a number of features in device characteristics, often detected in experiments.

  • Coherent transport of hole in p type semiconductive carbon nanotube

    In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

  • Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

    This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano- dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.

  • Potential future generation nanoscale MOS device: Trigate (TG) or Double Gate (DG) FinFETs?

    Performance limit of Tri-Gate (TG) and Double Gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin thickness, strong quantum mechanical confinement degrades the ballistic current. The simulation result presented here contradicts with the previously reported result that TG FinFETs show better performance than DG FinFET and reveals that DG FinFET shows slightly better performance below 5 nm fin thickness. This result indicates that in terms of ballistic drive current the tri-gate device is not always favorable than double gate device especially when the device dimension is scaled down deeply.

  • Influence of metallic spikes and non-uniform density of two-dimensional electron gas (2DEG) on the contact resistance to AlGaAs/GaAs heterostructures

    An expression for the series resistance of an HEMT has been derived, taking into account for the first time the nonuniformity of the ohmic contact interface. The penetration of the AuGeNi metallization into the 2DEG in the subcontract area (in the form deep penetrating "spikes") has been investigated and the model has been elaborated in order to determine the correct value of the contact resistance depending on the fraction of the area of penetration. Simulation of the growth of the spikes depending on the thermal processes has been made. The prediction of the shape "spikes" and their density makes it possible to calculate the value of the area of penetration. Therefore, a correlation between the dependence has been experimentally verified and it gave good agreement with the model. It has established the optimum parameters of thermal processing to obtain the minimum value of series resistance. The model of nonuniformity of interface may also be used to solve the problem of the influence of a periodic electrical potential on ballistic transport in mesoscopic devices.

  • Quasi Ballistic Transport in Advanced MOSFET Devices

    The Physics and understanding of ballistic and quasi ballistic transport in nanoMOSFET is reviewed, underlying main concepts, analytical models and open questions in this area.

  • Ballistic transistors entrance to nanoscale electronics

    Nanoscale devices in near future are going to be less than the mean free path of carriers. The ballistic conduction is highly probable in these devices. We have investigated the physics of the ballistic field effect transistors (FETs). The I-V characteristics of the ballistic silicon MOSFET is shown, and the mechanism of device operation was discussed. The performance limit of the MOSFET is discussed by means of the ballistic MOSFET characteristics derived. Performance of the experimental device is compared to the ballistic limit in some fabricated samples. The carbon nanotube FET is introduced as the other example of the ballistic FET. The device was found to be of exceedingly high performance if the ballistic conduction was actually realized.

  • MOSFET modeling into the ballistic regime

    Physically-based full band Monte-Carlo simulations are compared with drift- diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.

  • High-field initiated ballistic transport in carbon nanotubes

    In this paper, the carrier statistics in the carbon nanotube with nonparabolic energy spectrum was investigated to predict the ultimate (intrinsic) drift velocity using Arora's formalism, as a function of temperature, concentration, and chirality. Quantum emission factor was also explored. Results stated that the quantum emission does not affect the CNT mobility but lowered the saturation velocity. Results on ballistic and scattering-limited transport were also presented in order to identify experimental planning for the correct mechanisms of CNT or graphene nanostructure.

  • Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method

    Electrical properties in germanium and performances of GeOI devices have been studied using MC simulations. We have shown an ion improvement increasing when the channel length is shrinked that is not the case in strained-Si based NFET. The results clearly demonstrate that the germanium may be a promising material for the future CMOS technology.



Standards related to Ballistic Transport

Back to Top

No standards are currently tagged "Ballistic Transport"


Jobs related to Ballistic Transport

Back to Top