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Theoretical and experimental study of ScAlN/Sapphire structure based SAW sensor

2017 IEEE SENSORS, 2017

Several SAW devices based on Sc0.1Al0.9N/Sapphire bilayer structures were fabricated using various wavelengths and film thicknesses. The acoustic velocity, electromechanical coupling coefficient and temperature coefficient of frequency (TCF) of each device was then measured and the results were compared with calculations using several sets of elastic, piezoelectric and dielectric constants available in the literature. We have shown that the accuracy ...


Field-effect transistor with diphthalocyanine thin film

Electronics Letters, 1988

A field effect transistor has been fabricated with organic semiconductors: scandium diphthalocyanine and nickel phthalocyanine. The electrical characteristics are studied in air atmosphere. The influence of the diphthalocyanine film thickness has been detected.<>


Electron emission microscopy of scandate cathode emission sites

2016 29th International Vacuum Nanoelectronics Conference (IVNC), 2016

Emission Microscopy demonstrates that electron emission from an impregnated scandate cathode arises mainly from a random array of patches averaging about 100 nm in diameter.


Investigation of Sc2O3contents for nano-sized Scandia doped dispenser cathode

2018 IEEE International Vacuum Electronics Conference (IVEC), 2018

Nano-sized Scandia Doped Dispenser cathode made from Scandia doped tungsten powder has been paid worldwide attention due to its high emission and satisfactory emission uniformity. Among the adopted doping techniques the liquid-liquid doping by Sol-Gel process is the most favorable for the performance of this kind of cathode. A further searching on the details of the processes is necessary for ...


The effect of scandia doping on the structure and electron emission capacity of the 512 aluminate

2018 IEEE International Vacuum Electronics Conference (IVEC), 2018

Driven by the demands of thermionic cathode working in the vacuum electron devices with high power or/and frequencies, small amount of scandia were added into the 512 aluminate. All the samples are synthesized with the solid state mixing followed by the sintering. Powder X-ray diffraction (XRD) measurements revealed that the main phase of the samples is Ba5CaAl4O12and the scandium presents ...


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  • Theoretical and experimental study of ScAlN/Sapphire structure based SAW sensor

    Several SAW devices based on Sc0.1Al0.9N/Sapphire bilayer structures were fabricated using various wavelengths and film thicknesses. The acoustic velocity, electromechanical coupling coefficient and temperature coefficient of frequency (TCF) of each device was then measured and the results were compared with calculations using several sets of elastic, piezoelectric and dielectric constants available in the literature. We have shown that the accuracy of available constants is not enough to permit a reliable optimization and design of SAW devices for signal processing and sensors applications.

  • Field-effect transistor with diphthalocyanine thin film

    A field effect transistor has been fabricated with organic semiconductors: scandium diphthalocyanine and nickel phthalocyanine. The electrical characteristics are studied in air atmosphere. The influence of the diphthalocyanine film thickness has been detected.<>

  • Electron emission microscopy of scandate cathode emission sites

    Emission Microscopy demonstrates that electron emission from an impregnated scandate cathode arises mainly from a random array of patches averaging about 100 nm in diameter.

  • Investigation of Sc2O3contents for nano-sized Scandia doped dispenser cathode

    Nano-sized Scandia Doped Dispenser cathode made from Scandia doped tungsten powder has been paid worldwide attention due to its high emission and satisfactory emission uniformity. Among the adopted doping techniques the liquid-liquid doping by Sol-Gel process is the most favorable for the performance of this kind of cathode. A further searching on the details of the processes is necessary for cathode manufacturing. In this study, Sc2O3contents of 1%wt., 3%wt., 5%wt. and 7%wt. (named Sc1, Sc3, Sc5 and Sc7) were added to the tungsten powder; their effects on microstructures and emission performance of the produced cathodes were investigated. The study proved that the nano- sized Sc2O3particles are getting richer from Sc1 to Sc7 but cover on the W grains in all cases. While there is a slight decrease in porosities from Sc1 to Sc7, the filled impregnant of Ba Ca aluminates for Sc1 to Sc5 is satisfied the requirement for dispenser cathode, but is obviously lower for Sc7. All cathodes made from Sc3, Sc5 and Sc7 reach a Space Charge Limited current density of about 50A/cm2at true temperature of 960°C except Sc1 of 33A/cm2. The knee points at initial current density of 30A/cm2are 830C, 875°C and 920°C for Sc5, Sc3 and Sc7, respectively. Almost no knee can be observed for Sc1. Therefore, Sc5 and Sc3 exhibit the best emission and emission uniformity, Sc7 comes second and Sc1 goes the worst.

  • The effect of scandia doping on the structure and electron emission capacity of the 512 aluminate

    Driven by the demands of thermionic cathode working in the vacuum electron devices with high power or/and frequencies, small amount of scandia were added into the 512 aluminate. All the samples are synthesized with the solid state mixing followed by the sintering. Powder X-ray diffraction (XRD) measurements revealed that the main phase of the samples is Ba5CaAl4O12and the scandium presents in the materials in the form of Ba2ScAlO5phase after sintering. It was found that the addition of 3 wt.% scandium oxide to the 5BaO1CaO- 2Al2O3aluminates can increase the DC electron emission density from 5.98 A-cm- 2to 17.68 A-cm-2for the tungsten matrix cathode operating at 1100°CB.

  • Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: Influence of intrinsic stress and sputtering parameters

    Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for next generation RF filters, sensors, actuators and energy harvesting devices. In this work, process-microstructure-property relationships of such ASN films containing up to 40 at% Sc were investigated. Hereby, the influence of the process parameters on the film structure, the intrinsic stress and the piezoelectric response was carefully investigated.

  • Scandate cathode performance comparisons

    Data comparisons were made between scandate cathodes from several groups world-wide. Processing and test parameters were identical between cathodes. Cathode emission performance was measured in close-spaced diodes. This data will be presented. In addition, surface and cross-sectional morphology via SEM after sintering, impregnation, and activation are shown. Furthermore, the cathodes were installed in Pierce gun testers and comparison data taken at 100 amps/cm2. Life tests were performed and knee point migration on each cathode was measured. Crush tests on the cathode matrices were performed to gauge mechanical strength. Liquid-Solid versus Liquid-Liquid processes are evaluated.

  • Scandium Aluminum Nitride as an Emerging Material for High Power Transistors

    Incorporating a novel ultra-wide bandgap material, ScAlN, as the layer material in III-nitride high-electron-mobility transistors has the potential to improve output power at millimeter wave frequencies. Lattice-matched ScAlN can be grown by molecular beam epitaxy with high interfacial quality and phase purity. Varying the ScAlN barrier thickness from 3-25 nm results in sheet charge densities of 2.0-3.2 × 1013cm-2and electron mobilities as high as 1060 cm2/V·s.

  • The structure of Scandium thin films on the W(100) surface observed using emission microscopy

    Thermionic emission microscopy is used to observe scandium on W(100). Scandium thin films were deposited by thermal evaporation from a metal source onto W(100). The scandium films on W(100) were observed to dewet from the W(100) surface and to form droplets when the surface is heated: the dewetting temperature is thickness dependent, and spans a range from 500 to 800 C, far below the melting temperature (1541 C). Thinner films produce smaller droplets.

  • Scandium-doped barium hexaferrite thin-films for nonreciprocal satellite components

    In this study scandium-doped barium hexaferrite thin-films intended for self- biased nonreciprocal devices are produced by means of the sol-gel method on alumina substrate. The scandium doping factor is varied between x = 0:025 and x = 0:4. X-ray diffraction analysis and the measured hysteresis curves are shown for both doped and undoped films. For broadband microwave characterization the thin-films are deposited on coplanar waveguides. In experiments the ferromagnetic resonance frequency is shown to be adjustable from 43:2 GHz to 27:1 GHz by increasing the scandium-doping level and nonreciprocal behavior is demonstrated.



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