# Indium Gallium Nitride

View this topic in

# 49 resources related to Indium Gallium Nitride

### IEEE Organizations related to Indium Gallium Nitride

No organizations are currently tagged "Indium Gallium Nitride"

### Conferences related to Indium Gallium Nitride

2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications

2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems

2019 IEEE 9th International Nanoelectronics Conferences (INEC)

Topics of Interests (but not limited to)• Application of nanoelectronic• Low-dimensional materials• Microfluidics/Nanofluidics• Nanomagnetic materials• Carbon materials• Nanomaterials• Nanophotonics• MEMS/NEMS• Nanoelectronic• Nanomedicine• Nano Robotics• Spintronic devices• Sensor and actuators• Quality and Reliability of Nanotechnology

2019 IEEE Canadian Conference of Electrical and Computer Engineering (CCECE)

### Periodicals related to Indium Gallium Nitride

No periodicals are currently tagged "Indium Gallium Nitride"

### Xplore Articles related to Indium Gallium Nitride

IEEE Photonics Technology Letters, 2009

A nitride-based asymmetric two-step light-emitting diode (LED) with In0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N ...

IEEE Photonics Journal, 2012

We demonstrate a color-tunable smart display system based on a micropixelated light-emitting diode $(\mu\hbox{LED})$ array made from one InGaN epitaxial structure with high (0.4) indium mole fraction. When integrated with custom complementary metal–oxide–semiconductor (CMOS) electronics and a CMOS driving board with a field-programmable gate array (FPGA) configuration, this $\mu\hbox{LED}$ device is computer controllable via a simple USB interface and is ...

2012 Conference on Lasers and Electro-Optics (CLEO), 2012

Semipolar (202̅1̅) light-emitting diodes are demonstrated with high optical polarization ratio, high indium incorporation rate, small wavelength shift and narrow spectrum width. These advantages resulted in LEDs with high efficiency and low droop.

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671), 2003

Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.

2012 Conference on Lasers and Electro-Optics (CLEO), 2012

The characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N.

### Educational Resources on Indium Gallium Nitride

#### IEEE-USA E-Books

• A nitride-based asymmetric two-step light-emitting diode (LED) with In0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.

• We demonstrate a color-tunable smart display system based on a micropixelated light-emitting diode $(\mu\hbox{LED})$ array made from one InGaN epitaxial structure with high (0.4) indium mole fraction. When integrated with custom complementary metal–oxide–semiconductor (CMOS) electronics and a CMOS driving board with a field-programmable gate array (FPGA) configuration, this $\mu\hbox{LED}$ device is computer controllable via a simple USB interface and is capable of delivering programmable dynamic images with emission colors changeable from red to green by tailoring the current densities applied to the $\mu\hbox{LED}$ pixels. The color tunability of this CMOS-controlled device is attributed to the competition between the screening of piezo-electric field and the band filling effect. Comparable brightness of the $\mu\hbox{LED}$ pixels emitting at different colors was achieved by adjusting the duty cycle. Further measurement suggests that this microdisplay system can also be used for high-speed visible light communications.

• Semipolar (202̅1̅) light-emitting diodes are demonstrated with high optical polarization ratio, high indium incorporation rate, small wavelength shift and narrow spectrum width. These advantages resulted in LEDs with high efficiency and low droop.

• Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.

• The characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N.

• In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.

• We investigated the effects of prestrained layers on piezoelectric fields and indium incorporation in blue-emitting InGaN/GaN quantum wells by using reverse-biased electroreflectance spectroscopy. We compared two sets of samples, which have identical structures except an insertion of an additional UV quantum well at the bottom of the blue-quantum well. Indium composition of quantum wells with the additional layer is larger than in the wells without the added layer. In contrast, the magnitude of the piezoelectric fields in the quantum wells with the added well is smaller even with higher In composition. The result shows that the strain in the quantum well is partially released and can be controlled by the insertion of the prestrained layer underneath.

• Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1-xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.

• A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W /cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.

• The implementations of an orange and a red light-emitting diode (LED), which are fabricated with a prestrained InGaN-GaN quantum-well (QW) epitaxy structure, are demonstrated. The prestrain condition is created by growing a low-indium QW before the growth of five high-indium QWs. Without the prestrain condition, the five high-indium QWs of the same growth condition lead to green electroluminescence emission. With the prestrained growth, indium incorporation in the QWs grown after the low-indium one becomes higher and hence the orange-red LEDs can be fabricated for elongating the emission wavelength by more than 100 nm. Although the crystal quality and electrical properties of the orange-red LEDs may need to be improved, our results have shown the important effect of prestrained growth for elongating the LED wavelength