IEEE Organizations related to Indium Gallium Zinc Oxide

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Conferences related to Indium Gallium Zinc Oxide

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent (semi)conductive oxides.

  • 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


2019 IEEE 9th International Nanoelectronics Conferences (INEC)

Topics of Interests (but not limited to)• Application of nanoelectronic• Low-dimensional materials• Microfluidics/Nanofluidics• Nanomagnetic materials• Carbon materials• Nanomaterials• Nanophotonics• MEMS/NEMS• Nanoelectronic• Nanomedicine• Nano Robotics• Spintronic devices• Sensor and actuators• Quality and Reliability of Nanotechnology


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Periodicals related to Indium Gallium Zinc Oxide

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Most published Xplore authors for Indium Gallium Zinc Oxide

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Xplore Articles related to Indium Gallium Zinc Oxide

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Displays, Sensors, and MEMS - TFTs, Displays and Memories

2007 IEEE International Electron Devices Meeting, 2007

None


Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

IEEE Electron Device Letters, 2008

The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are ...


Hydrogen behavior from ALD Al2O3 passivation layer for amorphous InGaZnO TFTs

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014

The characteristics of amorphous indium gallium zinc oxide (a-InGaZnO) thin- film transistors (TFTs) fabricated using atomic layer deposition (ALD) Al2O3 passivation layer and hydrogen distribution in a-InGaZnO were investigated by comparison with plasma enhanced chemical vapor deposition (PECVD) passivation layer. TFTs fabricated using PECVD passivation layer showed conductive or hump behavior, while that fabricated using ALD passivation layer showed enhancement ...


High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007

Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.


High-Performance a-IGZO TFT With$\hbox{ZrO}_{2}$Gate Dielectric Fabricated at Room Temperature

IEEE Electron Device Letters, 2010

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2is one of the most promising high-kmaterials. The a-IGZO TFT (channelW/L= 240/30 ¿m) with ZrO2shows high performance such as high on current of 2.11 mA and ...


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Educational Resources on Indium Gallium Zinc Oxide

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IEEE-USA E-Books

  • Displays, Sensors, and MEMS - TFTs, Displays and Memories

    None

  • Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

    The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V ldr s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

  • Hydrogen behavior from ALD Al2O3 passivation layer for amorphous InGaZnO TFTs

    The characteristics of amorphous indium gallium zinc oxide (a-InGaZnO) thin- film transistors (TFTs) fabricated using atomic layer deposition (ALD) Al2O3 passivation layer and hydrogen distribution in a-InGaZnO were investigated by comparison with plasma enhanced chemical vapor deposition (PECVD) passivation layer. TFTs fabricated using PECVD passivation layer showed conductive or hump behavior, while that fabricated using ALD passivation layer showed enhancement type characteristics. According to secondary ion mass spectroscopy analysis, hydrogen was introduced into a-InGaZnO during PECVD, while it was hardly introduced during ALD regardless of considerable hydrogen in Al2O3. Thus, the behavior of hydrogen in a-InGaZnO is one possible cause of the difference in TFT characteristics between PECVD and ALD passivation.

  • High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors

    Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.

  • High-Performance a-IGZO TFT With$\hbox{ZrO}_{2}$Gate Dielectric Fabricated at Room Temperature

    We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2is one of the most promising high-kmaterials. The a-IGZO TFT (channelW/L= 240/30 ¿m) with ZrO2shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 cm2/(V·s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.

  • Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors

    The electrical performance as a function of operating temperature of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is assessed by measuring drain current versus gate voltage [log(ID) - VGS] transfer curves at temperatures from -50°C to +50°C. These bottom-gate staggered a-IGZO TFTs are fabricated using thermal silicon dioxide as the gate insulator. An almost rigid log(ID) - VGStransfer curve shift to lower (more negative) turn-on voltage (VON) with increasing temperature is observed. The extent of the VONoperating temperature dependence of a TFT appears to be correlated to its trap density. A lower trap density gives rise to less VONoperating temperature dependence. Although log(ID) - VGStransfer curves are observed to shift almost rigidly with temperature, a more detailed temperature-dependence assessment indicates that the shift is not exactly rigid. The mobility is found to increase slightly with increasing operating temperature. This trend is attributed to enhanced detrapping at a higher operating temperature.

  • High-Performance a-IGZO Thin-Film Transistor Using$ \hbox{Ta}_{2}\hbox{O}_{5}$Gate Dielectric

    In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta2O5exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 105, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm2/V·s; these characteristics make it suitable for use as a switching transistor and in low- power applications.

  • High-performance carbon nanotube/InGaZnO composite thin film transistors and concentration effect

    In this work, single-walled carbon nanotube/amorphous indium gallium zinc oxide (SWNT/a-IGZO) composite thin film transistors (TFTs) have been realized by a simple sputtering method for the first time. Effect of the embedded single-walled carbon nanotube (SWNT) concentration on the electrical properties of the composite TFTs has also been investigated. The composite TFTs show better electrical performance compared with those without SWNT. The TFTs with SWNT concentration of 0.025 mg/mL show the best performance among all the samples. The field-effect mobility is improved by more than twice by embedding SWNTs. The oncurrent reaches 0.54 μA/μm under a drain voltage of 20 V, and Ion/Ioff ratio reaches about 8×105. Lower threshold voltage has also been obtained. Besides, the proposed fabrication process is mainly sputter- based so that it is more stable to achieve the device uniformity and more compatible with the existing massproduction process for display panel, which pushes SWNT/a-IGZO composite TFTs one more step closer to the practical applications.

  • Bulk-Accumulation Oxide Thin-Film Transistor Circuits With Zero Gate-to-Drain Overlap Capacitance for High Speed

    The overlap between gate and source/drain electrodes gives rise to parasitic capacitance (Cgd), which causes RC signal delay in thin-film transistor (TFT) circuits. Here, we show that in amorphous-indium-gallium-zinc-oxide TFTs, offsets as large as 0.5 μm, result in only slight reductions in draincurrent, such that (compared with single-gate TFTs with 2.5-μm gate-to-source/drain overlaps) an overall three times increase in switching speed can be achieved in dual-gate TFTs with offset top-gates shorted to offset bottom-gates. The high switching speed (~18 ns/stage delay), which is a combined effect of the bulk-accumulation achieved by shorting the two gates and zero Cgd, results in high-speed amorphous oxide TFT-based circuits.

  • Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

    The effect of bulk accumulation on switching speed of dual-gate amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-based circuits is investigated. Given that bulk accumulation is achieved by synchronized driving of the top gate (TG) and bottom gate, it can be modulated by varying the length of the TG (LTG) for fixed source-drain distance (L). It is confirmed from fabricated ring oscillators that switching speed increases with increasing LTG for fixed L, verifying that bulk accumulation improves switching speed. However, switching speed drops dramatically when the TG overlaps the source/drain electrodes due to additional parasitic capacitance. TFT-circuits with the longest, but nonoverlapping TGs are demonstrated to exhibit the fastest switching speed; operation frequency exceeding 2.63 MHz for input voltage VDD of 20 V, which is also the fastest among all inverted staggered amorphous-oxide-semiconductor TFT-based circuits.



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