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Most published Xplore authors for Silicon On Sapphire

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Xplore Articles related to Silicon On Sapphire

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Integrated high-quality factor silicon-on-sapphire ring resonators for the mid-infrared

10th International Conference on Group IV Photonics, 2013

We demonstrate high-quality (Q) factor grating-coupled silicon-on-sapphire ring resonators, operating around 4.5 μm. Total Q-factors of 151,000 and intrinsic Q-factors of 278,000 are measured, enabling applications in nonlinear wavelength generation and other areas.


Silicon-on-sapphire nanowire for mid-IR supercontinuum generation

2015 Conference on Lasers and Electro-Optics (CLEO), 2015

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.


Evaluation of penetration of cosmetic liquids using terahertz time of flight method

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018

The terahertz time-of-flight method was applied to evaluate the the penetration speed and the depth of the skin lotion into the skin. The result suggests that the terahertz time-of-flight method is one of useful option in this field.


Integrated high-quality factor silicon-on-sapphire resonators for mid-infrared applications

CLEO: 2013, 2013

We demonstrate high-quality (Q) factor grating-coupled silicon-on-sapphire ring resonators, operating around 4.5 μm. Total Q-factors of 151,000 and intrinsic Q-factors of 278,000 are measured, enabling applications in nonlinear wavelength generation and other areas.


Novel superjunction LDMOS with multi-floating buried layers

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017

In this paper, a novel superjunction lateral double-diffused MOSFET (SJ-LDMOS) based on the bulk electric field modulation is proposed. The new structure is characterized by adding the multiple floating buried layers (MFBL) into the substrate/epitaxial layer. In this way, the high bulk electric field under the drain diffusion edge is reduced and the overall bulk electric field distribution is optimized. ...


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Educational Resources on Silicon On Sapphire

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IEEE.tv Videos

Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
Silicon Labs' Thunderboard Sense (SLTB001A): Mouser Engineering Bench Talk
Silicon THz: an Opportunity for Innovation
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
IMS MicroApps: Silicon Technology Solutions for Wireless Front End Modules
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
Ready, Fire, Aim - Highlights of Hot Chips 20
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Chief Scientist Barbara De Salvo on How Leti is a Pioneer to Innovation - 2016 Women in Engineering Conference
Transphorm: Redefining Energy Efficiency
KeyTalk with Ljubisa Stevanovic: From SiC MOSFET Devices to MW-scale Power Converters - APEC 2017
A CMOS Qubit: Quantum & Probabilistic Computing - Mark Sanquer at INC 2019
RF-pFET in Fully Depleted SOI Demonstrates 420GHz FT: RFIC Industry Showcase 2017
Augmented Reality: Stan Honey's Impact on Sports Events and Navigation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
Kurt Petersen: 2019 IEEE Medal of Honor Recipient
Connecting Silicon & Brain Neurons: Neuromorphic Computing - Stefano Vassanelli at INC 2019
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017

IEEE-USA E-Books

  • Integrated high-quality factor silicon-on-sapphire ring resonators for the mid-infrared

    We demonstrate high-quality (Q) factor grating-coupled silicon-on-sapphire ring resonators, operating around 4.5 μm. Total Q-factors of 151,000 and intrinsic Q-factors of 278,000 are measured, enabling applications in nonlinear wavelength generation and other areas.

  • Silicon-on-sapphire nanowire for mid-IR supercontinuum generation

    We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.

  • Evaluation of penetration of cosmetic liquids using terahertz time of flight method

    The terahertz time-of-flight method was applied to evaluate the the penetration speed and the depth of the skin lotion into the skin. The result suggests that the terahertz time-of-flight method is one of useful option in this field.

  • Integrated high-quality factor silicon-on-sapphire resonators for mid-infrared applications

    We demonstrate high-quality (Q) factor grating-coupled silicon-on-sapphire ring resonators, operating around 4.5 μm. Total Q-factors of 151,000 and intrinsic Q-factors of 278,000 are measured, enabling applications in nonlinear wavelength generation and other areas.

  • Novel superjunction LDMOS with multi-floating buried layers

    In this paper, a novel superjunction lateral double-diffused MOSFET (SJ-LDMOS) based on the bulk electric field modulation is proposed. The new structure is characterized by adding the multiple floating buried layers (MFBL) into the substrate/epitaxial layer. In this way, the high bulk electric field under the drain diffusion edge is reduced and the overall bulk electric field distribution is optimized. In addition, the N+/P-substrate junction and the auxiliary MFBL/substrate junctions jointly sustain a high breakdown voltage (BV). Simulated results show that the BV of MFBL SJ-LDMOS is improved by about 80.4% than that of the buffered step doping (BSD) SJ-LDMOS with the same drift region length. Furthermore, compared with the N-type buffered SJ-LDMOS the BV of MFBL SJ-LDMOS significantly increases by 131.7%. Moreover, the power figure-of-merit (FOM=BV2/RON, sp) of MFBL SJ-LDMOS reaches 13.07 MW/cm2 with the excellent performance breaking the silicon limit.

  • On-chip supercontinuum spanning 4000 nm in silicon on sapphire

    We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

  • Single-Event Transient Effect on a Self-Biased Ring-Oscillator PLL and an LC PLL Fabricated in SOS Technology

    The single-event transient effect on a ring-oscillator based and an LC-tank based phased-locked loop circuits fabricated in a 0.25 μm silicon-on-sapphire technology is analyzed with circuit-level simulations followed by laser experiments. Advantages of the LC-tank based circuits in terms of single-event tolerance over the ring-oscillator based circuits are discussed.



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