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Xplore Articles related to Spintronics

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Opportunity for Neutron Scattering in Spintronic Thin Film Materials Science

2016 International Conference of Asian Union of Magnetics Societies (ICAUMS), 2016

Basic science has revealed novel magnetic materials or magnetic effects which, in principle, show promise to be deployed in future magnetic electronics or storage devices.


Relativistic Motion of Antiferromagnetic Domain Walls Driven by Spin-Orbit Torques

2016 International Conference of Asian Union of Magnetics Societies (ICAUMS), 2016

Antiferromagnetic spintronics is attracting considerable interest nowadays as the antiferromagnet is immune to external magnetic fields [1] and compatible with metal or semiconductor electronic structure [2]. To be used as functional devices, one has to find an efficient driving force to manipulate antiferromagnet spins. The effect of spin transfer torque (STT) on antiferromagnetic spins has been identified [3]. Recently, Hals ...


Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

2016 IEEE International Electron Devices Meeting (IEDM), 2016

We propose a new spintronics-based memory employing the voltage-control- magnetic-anisotropy effect as a bit selecting principle and the spin-orbit- torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.


Quantum Anomalous Hall Phases in Layered Magnetic Oxides Predicted by First-Principles Density Functional Calculations

2016 International Conference of Asian Union of Magnetics Societies (ICAUMS), 2016

Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number usually in presence of spin-orbit coupling (SOC). Associated metallic chiral edge states carry dissipationless current transport in electronic devices. Due to its intriguing nontrivial topological properties and great potential application for designing dissipationless spintronics, extensive theoretical and experimental studies have been made to search ...


Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene-Based Magnetic Junction

IEEE Transactions on Nanotechnology, 2019

Hydrogenation is suggested as a preferred method for opening bandgap (BG) in graphene for use in spintronic devices. Magnetoresistance (MR) in graphene is found to increase with hydrogenation, which is in contrast to MR obtained through other methods and in pristine graphene. Hydrogenation also results in higher spin filtration (SF) with increase in bandgap in comparison to their values obtained ...


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Educational Resources on Spintronics

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IEEE-USA E-Books

  • Opportunity for Neutron Scattering in Spintronic Thin Film Materials Science

    Basic science has revealed novel magnetic materials or magnetic effects which, in principle, show promise to be deployed in future magnetic electronics or storage devices.

  • Relativistic Motion of Antiferromagnetic Domain Walls Driven by Spin-Orbit Torques

    Antiferromagnetic spintronics is attracting considerable interest nowadays as the antiferromagnet is immune to external magnetic fields [1] and compatible with metal or semiconductor electronic structure [2]. To be used as functional devices, one has to find an efficient driving force to manipulate antiferromagnet spins. The effect of spin transfer torque (STT) on antiferromagnetic spins has been identified [3]. Recently, Hals et. al, [4] reported a theory of STT-induced dynamics of antiferromagnetic domain wall (AF-DW) and found that the DW velocity is proportional to the ratio between the dissipative torque and the damping, as for ferromagnet (FM) DWs.

  • Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

    We propose a new spintronics-based memory employing the voltage-control- magnetic-anisotropy effect as a bit selecting principle and the spin-orbit- torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

  • Quantum Anomalous Hall Phases in Layered Magnetic Oxides Predicted by First-Principles Density Functional Calculations

    Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number usually in presence of spin-orbit coupling (SOC). Associated metallic chiral edge states carry dissipationless current transport in electronic devices. Due to its intriguing nontrivial topological properties and great potential application for designing dissipationless spintronics, extensive theoretical and experimental studies have been made to search for real materials to host such QAHE. Indeed, this intriguing QAH phase has recently been observed in magnetic impurity-doped topological insulators, albeit, at extremely low temperatures [1].

  • Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene-Based Magnetic Junction

    Hydrogenation is suggested as a preferred method for opening bandgap (BG) in graphene for use in spintronic devices. Magnetoresistance (MR) in graphene is found to increase with hydrogenation, which is in contrast to MR obtained through other methods and in pristine graphene. Hydrogenation also results in higher spin filtration (SF) with increase in bandgap in comparison to their values obtained through other methods. Bandgap opening of around ~5.96 eV in graphene is obtained with hydrogenation. Results suggest that MR in hydrogenated structure is larger than the MR of pristine graphene. MR values of ~99% are observed with hydrogenation in comparison to ~90% MR in pristine structure (without hydrogenation). Spin-injection efficiency which is also a measure of spin-filtration is observed to be higher in hydrogenated graphene at around ~90%-100% in comparison to ~80%-90% in the pristine structure.

  • Near-room temperature electrical control of spin and valley Hall effect in monolayer WSe2transistors for spintronic applications

    Monolayer transition metal dichalcogenide (TMD) materials have exciting potential for applications in spintronics. Due to the monolayer geometry and strong spin-orbit coupling, they are predicted to have a coupled spin and valley Hall effect (SVHE), where valley-polarized conduction carriers have opposite spin [1, 2, 3]. This could provide a valley-preserved spin Hall effect for switching future magnetic memories. WSe2is an attractive 2D material in this context because of its large valence band spin splitting. Lifetimes of spin and valley polarized carriers in monolayer WSe2have been measured from 0.7 ns to 1 μs at 10 K [4, 5, 6]. Such long lifetimes combined with reasonable mobilities lead to spin-valley accumulation that can be imaged via the magneto-optical Kerr effect (MOKE). For use in applications, it is necessary to electrically control the SVHE and push it towards room temperature.

  • Scanning Tunneling Microscopy Study on Spintronic Emergent Materials

    We present here the study of scanning tunneling microscopy (STM) on emergent materials with spin characteristics. Scanning tunneling spectroscopy (STS) is used to monitor the local electronic structure in nanometer scale for material surface, and further with help of a magnetic tip, can be spin-sensitive, becoming spin-polarized STM. Several examples will be given in this talk.

  • A general circuit model for spintronic devices under electric and magnetic fields

    In this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport equations which might also neglect certain effects such as thermal fluctuations, spin dissipation in the ferromagnets, and spin precession under magnetic fields, our model incorporates most of the important physics and is based on a time-dependent formulation. An application of our model is shown through simulations of a nonlocal spin-valve under the presence of a magnetic field, where we reproduce experimental results of electrical measurements that demonstrate the phenomena of spin precession and dephasing (“Hanle effect”).

  • Recent Progress in Spintronics and Devices

    The continuing quest of low- dissipation memory and logic devices is critical to enable a new paradigm of non-volatile computation. Spintronic devices are among the best candidates for a non-volatile platform due to the inherent hysteretic property of magnetic materials and the compatibility of these materials with the standard CMOS process. The first generation of the spintronics memory devices uses current-driven spin-transfer-torque (STT) composed of a magnetic tunneling junction (MTJ) structure (Fig. 1 a) [1]; it however has challenges in scaling. The Recent advances of using relativistic spin orbit coupling (SOC) offer potentials for resolving these challenges. Using topological insulators and taking advantage of the spin-momentum locking at their surfaces, giant SOTs are created, enabling ultralow power switching of magnetization (Fig. 1b) [2]. For SOT devices, I will discuss some drawbacks and solutions of SOT devices in needing an external magnetic field for deterministic switching of perpendicular magnetization by the use of structural asymmetry [3] and exchange bias [4] for enabling deterministic field-free SOT switching (Fig. 1c, d). Second, I will discuss the interface engineering of SOC for devices and circuits. Voltage- controlled spintronics by the use of SOI to manipulate magnetic anisotropy (VCMA) effect is another example (Fig. 2a) [5]. For this kind of devices, a high effective VCMA value reported (120 fJ/V-m) using industrial compatible CMOS back-end-of-line fabrication processes was reported for below a 1 fJ switching energy. Beyond the device level properties, we have simulated array-level memory performance metrics compared with SRAM. VCMA-based memory has much lower write energy and higher density (Fig. 2b) along with innovative circuits for improvements. By combining SOT and VCMA, 3-terminal MTJs have been demonstrated the spin logic applications. I will also provide an overview for other devices of magnonic logic circuits allowing for scaling down to the nanometer range and THz frequency operation. Topologically protected magnetic skyrmions and other topological spin textures are robust against defects and external perturbations and may have practical memory and logic devices applications. By engineering SOT and VCMA, we demonstrated new methods for creating and manipulating a stable skyrmion phase in the CoFeB-MgO material system at room temperature [6], [7] (Fig. 2c). With these recent Advances, we are positioned for a new era of heterogeneous integration of spintronics devices with CMOS [8].

  • Van Der Waal Epitaxy: A New Perspective for Flexible Spintronic Devices

    Magnetite (Fe3O4) is a promising candidate for spintronic devices due to its high spin-polarization at Fermi level[1], high Curie temperature [2] and high conductivity[3]. In this work, to demonstrate Fe3O4for flexible spintronics, we estabilish Fe3O4on flexible and transparent muscovite substrates. The crystal structure and epitaxial relationship are estabilished by a combination of reflection high energy electron diffraction, high-resolution X-ray diffraction and Ramn spectroscopy.



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