IEEE Organizations related to Magnetic Multilayers

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Conferences related to Magnetic Multilayers

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


IGARSS 2020 - 2020 IEEE International Geoscience and Remote Sensing Symposium

All fields of satellite, airborne and ground remote sensing.


2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems


2019 IEEE 9th International Nanoelectronics Conferences (INEC)

Topics of Interests (but not limited to)• Application of nanoelectronic• Low-dimensional materials• Microfluidics/Nanofluidics• Nanomagnetic materials• Carbon materials• Nanomaterials• Nanophotonics• MEMS/NEMS• Nanoelectronic• Nanomedicine• Nano Robotics• Spintronic devices• Sensor and actuators• Quality and Reliability of Nanotechnology


2018 International Semiconductor Conference (CAS)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics ofscientific research and technological development. On the other hand, this is an occasion forrefreshing a broad perspective of the participants through invited papers and tutorials. TheConference is underlying the development in micro-and nanotechnologies, still maintaining the"traditional" connection with semiconductor electronics.


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Periodicals related to Magnetic Multilayers

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Most published Xplore authors for Magnetic Multilayers

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Xplore Articles related to Magnetic Multilayers

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Pro's and con's on a superconducting memory

1959 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1959

The most direct way to attain a faster computer is to increase speed of the random-access memory (RAM). In this connection, application of the principles of superconductivity to memory to attain rapid switching times is currently being givcn serious cousideration. This report covers the advantages and disadvantages experienced during our investigations on 8 x 8 memory planes.


Magnetic properties of Fe-N/Si-N multilayer films

1990 IEEE International Magnetics Conference (INTERMAG), 1990

None


Transformers

Electrical Energy Conversion and Transport: An Interactive Computer-Based Approach, None

This chapter contains sections titled:ConstructionSingle-Phase TransformersThree-Phase Transformers]]>


Anisotrophy and magneto-optical studies in evaporated Co/Pt multilayers

1990 IEEE International Magnetics Conference (INTERMAG), 1990

None


Magneto-optical recording on eveporated Co/Pt multilayer films

1990 IEEE International Magnetics Conference (INTERMAG), 1990

None


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Educational Resources on Magnetic Multilayers

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IEEE.tv Videos

Nanoscale Magnetism with Picosecond Time Resolution and High Sensitivity - Hendrik Ohldag - IEEE Magnetics Distinguished Lecture
JUSTIN M. SHAW - IEEE Magnetics Distinguished Lecture
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Perpendicular magnetic anisotropy: From ultralow power spintronics to cancer therapy
A Discussion on Hard Drives
Magnetic Nanowires: Revolutionizing Hard Drives, RAM, and Cancer Treatment
HYUNSOO YANG - IEEE Magnetics Distinguished Lecture
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 6 of 7 - A high sensitive magnetometer system for natural magnetic field measurements
Spin Dynamics in Inhomogeneously Magnetized Systems - Teruo Ono: IEEE Magnetics Society Distinguished Lecture 2016
Magnetic Shield Implementation - EMC Society Demo
HARI SRIKANTH - IEEE Magnetics Distinguished Lecture
35 Years of Magnetic Heterostructures
High Magnetic Field Science and its Application in the US - ASC-2014 Plenary series - 10 of 13 - Friday 2014/8/15
IEEE Magnetics 2014 Distinguished Lectures - JONATHAN COKER
Magmites: Wireless Resonant Magnetic Microrobots
Magnetic Materials and Magnetic Devices - Josep Fontcuberta: IEEE Magnetics Distinguished Lecture 2016
IEEE Magnetics 2014 Distinguished Lectures - Tim St Pierre
ASC-2014 SQUIDs 50th Anniversary: 4 of 6 - Keiji Enpuku
IMS 2015: Robert H. Caverly - Aspects of Magnetic Resonance Imaging
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing

IEEE-USA E-Books

  • Pro's and con's on a superconducting memory

    The most direct way to attain a faster computer is to increase speed of the random-access memory (RAM). In this connection, application of the principles of superconductivity to memory to attain rapid switching times is currently being givcn serious cousideration. This report covers the advantages and disadvantages experienced during our investigations on 8 x 8 memory planes.

  • Magnetic properties of Fe-N/Si-N multilayer films

    None

  • Transformers

    This chapter contains sections titled:ConstructionSingle-Phase TransformersThree-Phase Transformers]]>

  • Anisotrophy and magneto-optical studies in evaporated Co/Pt multilayers

    None

  • Magneto-optical recording on eveporated Co/Pt multilayer films

    None

  • Quantitative Magnetic Characterization of Synthetic Ferrimagnets for Predictive Spin-Dynamic Behavior

    Geometric or magnetic asymmetries in synthetic antiferromagnetic particles give rise to ferrimagnetic-like magnetization behavior, both quasi-static and dynamic. Such asymmetries in synthetic ferrimagnets can originate from a thickness imbalance or a fringing field from the reference layer in a nanopillar stack. In this paper, we theoretically describe the effects of the corresponding magnetic asymmetry contribution on the structure's static and spin-dynamic behavior. The developed model is then used to experimentally determine the asymmetry parameters of typical nanoscale spin-flop junctions, as well as successfully describe their microwave resonant properties, such as the frequency splitting and the field dependence of the optical spin-resonance spectra.

  • Magnetic Behavior of Ni/Cu Multilayer Nanowire Arrays Studied by First-Order Reversal Curve Diagrams

    Arrays of Ni/Cu multilayer nanowires were fabricated by electrodeposition into alumina templates (pore diameter = 175 nm, interpore distance = 300 nm), with an Ni disc thickness between 20 and 50 nm, and a Cu thickness between 10 and 35 nm. Vector major hysteresis loops were measured with an out-of-plane (along the nanowire axis) and inplane (perpendicular to the nanowire axis) applied field. During the magnetization reversal, we did not observe any net component of transverse magnetization (My) , perpendicular to the applied field Hx. Extrapolated first-order reversal curve (FORC) diagrams were measured, out-of- plane and inplane. While the major hysteresis loops of all arrays have similar shapes, their FORC diagrams reveal distinct patterns, suggesting different magnetic behavior. The magnetic anisotropy can be controlled by the ratio of Cu to Ni thickness, the nanowire axis becoming harder as the ratio increases. In the out-of-plane direction, the maximum interaction field is proportional to the Ni thickness. The FORCs show evidence of a large coercive field distribution, which we attribute to the smaller interaction fields in the nanodiscs along the edges of the samples. In the inplane direction, depending upon the easy axis direction, there can be a mixture of nanodiscs reversed by coherent and incoherent rotation, or by incoherent rotation only.

  • Decimal Tunneling Magnetoresistance States in Fe/GaAlAs/GaMnAs Magnetic Tunnel Junction

    We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.

  • Electronic and structural characteristics of atomic diffusion in Fe/Al [001] and Al/Fe [001] systems

    In this study, the atomistic behaviors of surface diffusion and incorporation in Fe-Al multilayer systems were quantitatively investigated using density functional theory (DFT) calculation. The energy barrier, energy gain, charge density distribution, and density of states (DOS) were analyzed, in detail, to determine the factors governing the interface morphology and the growth mode for multilayer fabrication of extremely reduced dimension.

  • Controlling the Magnetic Properties of Cr-Implanted Co/Pt Multilayer Films Using Ion Irradiation for Planar Patterned Media

    We have investigated the modification of the microstructure and magnetic properties of Co/Pt multilayer films with various layer structures using ion beam irradiation. Cr/[Co/Pt] multilayer films prepared by a magnetron sputtering deposition on a surface oxidized Si substrate were irradiated by 30 keV Kr+ ion beam with various ion doses from 1×1014 to 5×1015 ions/cm2. The modifications of magnetic properties and microstructures due to Kr+ ion irradiation depended on Co/Pt layer structures. The as-prepared [Co(0.4 nm)/Pt(0.45 nm)]15 multilayer films were confirmed to exhibit the square shaped M-H loop and the perpendicular easy axis with a saturation magnetization of 620 emu/cc and coercivity of 1.1 kOe. After the irradiation with ion dose of 5×1015 ions/cm2, the easy axis changes from perpendicular to in-plane direction. The coercivity and saturation magnetization decrease down to 2% and 13% of its original values, respectively. The decrease of coercivity and saturation magnetization is due to the implantation of the Cr atom in the top most layers into Co/Pt multilayer films caused by Kr+ ion irradiation, as confirmed from Auger electron spectroscopy (AES) depth profiles.



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Jobs related to Magnetic Multilayers

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