IEEE Organizations related to Single Event Transients

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Conferences related to Single Event Transients

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Periodicals related to Single Event Transients

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Most published Xplore authors for Single Event Transients

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Xplore Articles related to Single Event Transients

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Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013

Heavy-ion tests on 65nm CMOS Flip-Flops with different topologies are conducted to investigate their susceptibility to single event upsets (SEUs) and single event transients (SETs). The test results show that SETs on scan- enable node (SE) may cause a large number of SEUs, and the conventional delay filter is vulnerable to SETs, which can reduce the efficiency of delay-filter Flip-Flops. ...


Study of a delayed single-event effect in the Muller C-element

2016 21th IEEE European Test Symposium (ETS), 2016

We study the behavior of the Muller C-element, a fundamental building block in asynchronous design, under SETs. Beyond the expected reactions to the injected SETs - namely immediate state flip or pulse at the output - we also observed an new kind of behavior for the Muller C-element, namely a delayed state flip. In this paper we give a closer ...


Mitigating Multi-Bit-Upset With Well-Slits in 28 nm Multi-Bit-Latch

IEEE Transactions on Nuclear Science, 2013

This paper proposes a technique that mitigates multi-bit-upset (MBU) in multi- bit-latch (MBL) without performance degradation by applying well-slits. The area overhead in an MBL macro for processor design, which includes a clock buffer and a checker, is only 5.4% in a 28 nm technology. Sixty-hour accelerated neutron irradiation test observed no MBUs in the MBL with well- slits. The ...


Simulation of Proton Induced SET in Linear Devices and Assessment of Sensitive Thicknesses

2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2015

This study aims to accurately determine analog SET proton cross sections derived from heavy ion data using gateway tools such as METIS, SIMPA or the more recent METIS approach we developed within Airbus Group. We validate the methodology on three linear devices and show promising results. Especially, METIS could be used in a reversed manner to determine the sensitive thickness ...


A single event transient immune oscillator for DC-DC converter controllers

2017 IEEE International Conference on Signal Processing, Communications and Computing (ICSPCC), 2017

This paper presents a radiation harden oscillator for DC-DC converter controllers. In order to mitigate the single event transient, a novel synchronous RS flip-flop is proposed. Redundancy flip-flop blocks are connected in cycle. Therefore, upset node voltage can be corrected by other nodes. Gate size is carefully designed to improve the critical charge. Three modular redundancy is also utilized. Moreover, ...


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Educational Resources on Single Event Transients

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IEEE.tv Videos

An IEEE IPC Special Session with X. Chen from Nokia Bell Labs
Energy Efficient Single Flux Quantum Based Neuromorphic Computing - IEEE Rebooting Computing 2017
Single Frame Super Resolution: Fuzzy Rule-Based and Gaussian Mixture Regression Approaches
Neuromorphic computing with integrated photonics and superconductors - Jeffrey Shainline: 2016 International Conference on Rebooting Computing
A Comparison Between Single Purpose and Flexible Neuromorphic Processor Designs: IEEE Rebooting Computing 2017
2013 IEEE Medal in Power Engineering
Broadband IQ, Image Reject, and Single Sideband Mixers: MicroApps 2015 - Marki Microwave
IMS MicroApps: Single Chip LNA on 0.25um SOS for SKA Midband Receiver
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Multiobjective Quantum-inspired Evolutionary Algorithm and Preference-based Solution Selection Algorithm
Approximate Dynamic Programming Methods A Unified Framework
A Wideband Single-PLL RF Receiver for Simultaneous Multi-Band and Multi-Channel Digital Car Radio Reception: RFIC Industry Showcase
Handling of a Single Object by Multiple Mobile Robots based on Caster-Like Dynamics
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
IEEE IPC Special Session with Domanic Lavery of UCL
SIMD Programming in VOLK, the Vector-Optimized Library of Kernels
Ciena Corp - IEEE Spectrum Emerging Technology Award, 2019 IEEE Honors Ceremony
Stochastic Single Flux Quantum Neuromorphic Computing using Magnetically Tunable Josephson Junctions - Stephen Russek: 2016 International Conference on Rebooting Computing

IEEE-USA E-Books

  • Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)

    Heavy-ion tests on 65nm CMOS Flip-Flops with different topologies are conducted to investigate their susceptibility to single event upsets (SEUs) and single event transients (SETs). The test results show that SETs on scan- enable node (SE) may cause a large number of SEUs, and the conventional delay filter is vulnerable to SETs, which can reduce the efficiency of delay-filter Flip-Flops. A new delay filter named redundant delay filter (RDF) is proposed to improve the SET immunity.

  • Study of a delayed single-event effect in the Muller C-element

    We study the behavior of the Muller C-element, a fundamental building block in asynchronous design, under SETs. Beyond the expected reactions to the injected SETs - namely immediate state flip or pulse at the output - we also observed an new kind of behavior for the Muller C-element, namely a delayed state flip. In this paper we give a closer analysis of this effect and identify its enabling conditions.

  • Mitigating Multi-Bit-Upset With Well-Slits in 28 nm Multi-Bit-Latch

    This paper proposes a technique that mitigates multi-bit-upset (MBU) in multi- bit-latch (MBL) without performance degradation by applying well-slits. The area overhead in an MBL macro for processor design, which includes a clock buffer and a checker, is only 5.4% in a 28 nm technology. Sixty-hour accelerated neutron irradiation test observed no MBUs in the MBL with well- slits. The proposed mitigation technique achieved excellent robustness against MBU without any increase in SBU rate. The MBL with the proposed mitigation technique helps improve reliability of electronic devices.

  • Simulation of Proton Induced SET in Linear Devices and Assessment of Sensitive Thicknesses

    This study aims to accurately determine analog SET proton cross sections derived from heavy ion data using gateway tools such as METIS, SIMPA or the more recent METIS approach we developed within Airbus Group. We validate the methodology on three linear devices and show promising results. Especially, METIS could be used in a reversed manner to determine the sensitive thickness based on the knowledge of both proton and heavy ion cross sections.

  • A single event transient immune oscillator for DC-DC converter controllers

    This paper presents a radiation harden oscillator for DC-DC converter controllers. In order to mitigate the single event transient, a novel synchronous RS flip-flop is proposed. Redundancy flip-flop blocks are connected in cycle. Therefore, upset node voltage can be corrected by other nodes. Gate size is carefully designed to improve the critical charge. Three modular redundancy is also utilized. Moreover, radiation harden layout technology is applied to degrade the influence of total ionizing dose effect. The simulated results demonstrate that the proposed circuit can work well with linear energy transient of about 85 Mev· cm2/mg.

  • On the mitigation of single event transients on flash-based FPGAs

    Thanks to the immunity against Single Event Upsets in configuration memory, Flash-based FPGA is becoming widely adopted in mission- and safety-critical applications, such as in aerospace field. However, the decreasing of device feature size leads to an increasing of the device sensitivity regarding Single Event Transients (SETs). In this paper, we developed a new workflow to evaluate SET phenomena in a specific convergence case and introduce a new mitigation of SET pulse without introducing any performance penalization to the original netlist.

  • Radiation hardened by design techniques to mitigating P-hit single event transient

    As technologies scale down in size, the single event effect has become a universal phenomenon. In this work, a new radiation hardened by design (RHBD) technique has been proposed to mitigating P-hit single event transient. This method is named here as the 3 transistor common drain (3TCD) method. With simulations of the inverter chain using a three-dimensional (3D) technology computer-aided design (TCAD) simulation tool, it has been found that this new 3TCD method has an obvious effect on the p-channel metal-oxide semiconductor field-effect transistor (PMOS FET) by mitigating single event transient (SET) pulse widths (WSET).

  • The influence of hysteresis voltage on single event transients in a 65nm CMOS high speed comparator

    Hysteresis in a comparator improves the input noise immunity, but can also cause analogue single event transients (ASETs) to be captured. For example, compared to a hysteresis-free comparator, a comparator with a hysteresis voltage of 8 mV, takes an additional 40 ns to recover. As the requirement for noise immunity increases, the vulnerability of a comparator with hysteresis to ASETs worsens. The reliability also worsens for higher sampling frequencies and lower differential input voltage amplitudes. This paper investigates the trade-off between noise immunity and reliability in a 65nm CMOS comparator.

  • Radiation Effects Characterization of TI LMT01-SP1 High Accuracy 2-pin Temperature Sensor

    LMT01-SP is a high accuracy two pin Temp Sensor being released for Space applications. LMT01-SP has been characterized to pass Total Dose (TID) of 100Krads. It is shown to be Latch-up immune upto 93.17 MeV-cm2 /mg, and has very low cross section for Single Event Transients.

  • Radiation Effects Characterization of TI OPA4277-SP High Precision Operational Amplifier

    OPA4277-SP is a high precision operational amplifier with very low offset device that is released for space applications. OPA4277-SP has been characterized to pass Total Ionizing Dose (TID) of 50Krads and is shown to be latch-up immune up to 90.9 MeV-cm2/mg. Detailed Single Event Transient (SET) study was done to encompass multiple customer use case conditions.



Standards related to Single Event Transients

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Jobs related to Single Event Transients

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