IEEE Organizations related to Chalcogenides

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Conferences related to Chalcogenides

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2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL)

CAOL*2019 will provide a forum for scientists in a wide area of laser physics, optoelectronics, optics and photonics. The conference will cover wide frontiers in laser physics, photonics, nanotechnology, material physics, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the problems in hand, together with detailed analysis of application problems. This year in the frame of CAOL we will organize two accompanying events, the Workshop on Data Science in Modern Optoelectronics and Laser Engineering and the Workshop “Measurement Uncertainty: Scientific, Standard, Applied and Methodical Aspects” (UM*2019). DSMOLE*2019 will be dedicated to problems arising from merging of modern optoelectronics and laser engineering with data science, artificial and computational intelligence. UM*2019 will cover cutting edge developments in metrology and adjacent fields.

  • 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The technical program traditionally consists of invited lectures and regular contributed papers (oral and poster sessions). The previous conferences were successfully held in since 1999 in different cities of Ukraine and Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3- 2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    CAOL*2013 will provide a forum for scientists in a wide area of laser physics and optoelectronics. The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The previous conferences were successfully held in 2003, 2005, 2008 and 2010 in Crimea, and in 2006 in Guanajuato, Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3-2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with analysis of the application problems. The technical program consists of invited and regular contributed papers.

  • 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The 4-nd International Conference on Advanced Optoelectronics and Lasers (CAOL'2008) will be held in Alushta, Crimea, Ukraine, from September 29 to October 4, 2008. CAOL'2008 will provide a forum for experts in a wide area of laser physics and optoelectronics. The previous conferences were successfully provided in 2003 and 2005 in Crimea, and in 2006 in Guanajuato, Mexico.

  • 2005 International Conference on Advanced Optoelectronics and Lasers (CAOL)

  • 2003 International Conference on Advanced Optoelectronics and Lasers (CAOL)


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Periodicals related to Chalcogenides

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No periodicals are currently tagged "Chalcogenides"


Most published Xplore authors for Chalcogenides

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Xplore Articles related to Chalcogenides

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Cross Point Cu-ReRAM with BC-Doped Selector

2018 IEEE International Memory Workshop (IMW), 2018

Cross point ReRAM is a promising candidate for Storage Class Memory (SCM) application. We have developed both of our original Cu-ReRAM and BC-doped OTS selector material technologies. Cu-ReRAM shows the best variability and operational window margin among reported ReRAMs. BC-doped Selector achieved outstanding performance of cycling endurance, Vth drift and leakage current. Additives of Boron and Carbon improve thermal stability ...


Band-Gap Engineering in Cu2ZnSn(S,Se)4 Solar Cells by Post-Sulphurization of Selenized Absorber Layers

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017

A post-sulphurization process for kesterite Cu2ZnSn(S,Se)4 solar cell absorber layers is developed in order to control the sulphur concentration and thus the band gap of the resulting solar cell absorber layers. It is shown that at sulphurization temperatures above 450°C an efficient incorporation of S takes place. Varying temperature between 450°C and 600°C and hold time between 5 min and ...


Time Domain Modeling of Multimode Selenide-Chalcogenide Glass Fiber Based Mid Infrared Spontaneous Emission Sources

2018 20th International Conference on Transparent Optical Networks (ICTON), 2018

We develop time domain models of selenide-chalcogenide glass fiber based MIR spontaneous emission sources. The modeling parameters used are derived from experimentally obtained data. The models are based on the rate equations' approach to simulate the distribution of ions between the relevant energy levels. The optical power distribution within the fiber is calculated by solving a set of partial differential ...


Plasma Prepared Arsenic Sulfide Luminescent Quantum Dots

2018 20th International Conference on Transparent Optical Networks (ICTON), 2018

For the first time the arsenic sulfide luminescence quantum dots have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The chalcogenide materials were synthesized as via direct interaction of elemental arsenic and sulfur vapors and as well as by disproportion of arsenic monosulfide vapors in RF (40 MHz) low-temperature non-equilibrium argon plasma discharge at low pressure. The structural and optical ...


Mid-infrared waveguide integrated chalcogenide glass on black phosphorus photodetectors

2018 Conference on Lasers and Electro-Optics (CLEO), 2018

The first mid-infrared waveguide integrated black phosphorus photodetector was fabricated and characterized with a responsivity of 40 mA/W at 2185 nm wavelength.


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Educational Resources on Chalcogenides

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IEEE.tv Videos

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IEEE-USA E-Books

  • Cross Point Cu-ReRAM with BC-Doped Selector

    Cross point ReRAM is a promising candidate for Storage Class Memory (SCM) application. We have developed both of our original Cu-ReRAM and BC-doped OTS selector material technologies. Cu-ReRAM shows the best variability and operational window margin among reported ReRAMs. BC-doped Selector achieved outstanding performance of cycling endurance, Vth drift and leakage current. Additives of Boron and Carbon improve thermal stability above 400oC, showing compatibility for process integration at the same time. 1S1R memory cell of combination of Cu-ReRAM and BC-doped OTS matches well and shows excellent performance to enable Mbit class cross point array.

  • Band-Gap Engineering in Cu2ZnSn(S,Se)4 Solar Cells by Post-Sulphurization of Selenized Absorber Layers

    A post-sulphurization process for kesterite Cu2ZnSn(S,Se)4 solar cell absorber layers is developed in order to control the sulphur concentration and thus the band gap of the resulting solar cell absorber layers. It is shown that at sulphurization temperatures above 450°C an efficient incorporation of S takes place. Varying temperature between 450°C and 600°C and hold time between 5 min and 1 hour the sulphur content can accurately be controlled, thus allowing bandgap tuning in the complete range between about 1 eV and 1.5 eV.

  • Time Domain Modeling of Multimode Selenide-Chalcogenide Glass Fiber Based Mid Infrared Spontaneous Emission Sources

    We develop time domain models of selenide-chalcogenide glass fiber based MIR spontaneous emission sources. The modeling parameters used are derived from experimentally obtained data. The models are based on the rate equations' approach to simulate the distribution of ions between the relevant energy levels. The optical power distribution within the fiber is calculated by solving a set of partial differential equations using specially developed finite difference schemes that allow for a direct inclusion of the step discontinuities appearing at the fiber facets. The results obtained allow for a thorough analysis of luminescence from lanthanide ion doped chalcogenide fibers.

  • Plasma Prepared Arsenic Sulfide Luminescent Quantum Dots

    For the first time the arsenic sulfide luminescence quantum dots have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The chalcogenide materials were synthesized as via direct interaction of elemental arsenic and sulfur vapors and as well as by disproportion of arsenic monosulfide vapors in RF (40 MHz) low-temperature non-equilibrium argon plasma discharge at low pressure. The structural and optical properties of the nanoclusters were studied. Having been prepared by the proposed method, the chalcogenide quantum dots possess the spherical and ellipsoidal shape. These forms are of practical interest, since they appear to be utilized as a source of polarized irradiation.

  • Mid-infrared waveguide integrated chalcogenide glass on black phosphorus photodetectors

    The first mid-infrared waveguide integrated black phosphorus photodetector was fabricated and characterized with a responsivity of 40 mA/W at 2185 nm wavelength.

  • An innovative alkali doping strategy for Cu2ZnSnSe4through the CdS buffer layer

    Alkali doping (Li, Na, K) has shown to be very relevant for obtaining high efficiency kesterite solar cells. Conversely to absorbers produced by chemical routes, the doping with very low alkaline contents of absorbers prepared by PVD routes is very complex. In this work we present an innovative approach based on the introduction of alkali-citrates during the CBD process of CdS, for the selective doping of Cu2ZnSnSe4/CdS interface. We demonstrate that this simple strategy is very useful for incorporating the alkalis into the system, reporting efficiencies over 10% for the K doped CdS.

  • Advanced Functions for Signal Processing and Sensing Harnessing On-Chip SBS

    This paper reviews some of the significant SBS-enabled signal processing applications in chalcogenide photonic waveguides and demonstrates a characterization technique to monitor the performance of this platform.

  • Mid-Infrared Waveguides and Applications

    Mid-infrared spectroscopy attracts growing interests because of its coverage over the characteristic spectral absorption features for many molecules. This paper will review our study in mid-infrared photonics including material characterization, on-chip waveguide fabrication and supercontinuum generation for the spectroscopic applications.

  • Review of progress in understanding the electron transport properties of amorphous chalcogenide phase change semiconductors (Invited paper)

    The amorphous chalcogenide phase change semiconductors exhibit a series of peculiar yet technologically important electron transport properties, which have attracted intensive research attention in recent years. Despite their promising application scenario, these electron transport properties' fundamental governing physics remains an unsolved scientific puzzle which is still under debate. This paper reviews these measured peculiar electron transport properties, their technological significance, and their existing theoretical explanations. The open questions are summarized, in order to invoke further research attention.

  • Plasma Preparation of the Top-Quality Phase Change Materials Based on As-Se-Te Chalcogenide System

    The excellence of the Plasma-Enhanced Chemical Vapor Deposition (PECVD) approach in terms of preparation of the top-quality phase change materials based on As-Se-Te chalcogenide ternary system has been demonstrated. The samples were synthesized via direct interaction of arsenic, selenium and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at low pressure. The amorphous films with high degree of structural and chemical uniformity have been prepared in the broad range of contents, in particular, the chemical compositions going beyond the region of glass formation.



Standards related to Chalcogenides

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Jobs related to Chalcogenides

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