IEEE Organizations related to Extreme Ultraviolet Lithography

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Conferences related to Extreme Ultraviolet Lithography

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2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE Industry Applications Society Annual Meeting

The Annual Meeting is a gathering of experts who work and conduct research in the industrial applications of electrical systems.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Extreme Ultraviolet Lithography

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Most published Xplore authors for Extreme Ultraviolet Lithography

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Xplore Articles related to Extreme Ultraviolet Lithography

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Resist coating and developing process technology toward EUV manufacturing sub 7nm node

2018 International Symposium on Semiconductor Manufacturing (ISSM), 2018

Extreme ultraviolet lithography (EUVL) is getting closer to practical use for mass production every year. For applying EUV lithography to manufacturing, productivity improvement is a critical challenge. Throughput and yield are important factors for productivity. EUV source power is steadily advancing year by year, bringing improvements in throughput. Furthermore, yield improvement is necessary for productivity enhancement. In order to improve ...


Continuing Moore's law with EUV lithography

2017 IEEE International Electron Devices Meeting (IEDM), 2017

Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, significant progress has been made in the development of EUV exposure tools, with source power meeting the roadmap target for EUV insertion1 as well as demonstrating improvements in system ...


A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018

SRAM plays an integral role in the power, performance, and area of a mobile system-on-a-chip. To achieve low power and high density, extreme ultraviolet (EUV) technology is adopted for the 7nm FinFET technology [3-4]. Conventional ArF immersion with a single exposure for an extreme high-resolution patterning shows the limitation of lithographic patterning. Therefore, multi-patterning lithographic technique is applied to support ...


Enabling manufacturing of sub-10nm generations of integrated circuits with EUV lithography

2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019

A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on our NXE:3400B EUV exposure systems with much reduced rate of source power degradation. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle and progress on the pellicle has resulted in an EUV transmission of 83% at high source power. NXE:3400C ...


EUV Lithography at Threshold of High-Volume Manufacturing*

2018 IEEE International Electron Devices Meeting (IEDM), 2018

A throughput of >140 wph at a dose of 20 mJ/cm2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle ...


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Educational Resources on Extreme Ultraviolet Lithography

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IEEE-USA E-Books

  • Resist coating and developing process technology toward EUV manufacturing sub 7nm node

    Extreme ultraviolet lithography (EUVL) is getting closer to practical use for mass production every year. For applying EUV lithography to manufacturing, productivity improvement is a critical challenge. Throughput and yield are important factors for productivity. EUV source power is steadily advancing year by year, bringing improvements in throughput. Furthermore, yield improvement is necessary for productivity enhancement. In order to improve the yield in EUV lithography processing, further improvement of defectivity and critical dimension (CD) uniformity is required. Reduction of residue and in- film particle defects is very crucial work to enhance the productivity. For residue defects, it is found that the residue defects detected after development inspection (ADI) are perfectly transferred to after etching inspection (AEI), meaning that high defectivity of residue deteriorates yield directly. Furthermore, in-film particle defect counts increase from ADI to AEI because particles included in spin-on-carbon (SOC) and spin-on-glass (SOG) as well as that in resist film are the sources of defects in AEI, while particles mainly included in resist film can be observed in ADI. Figure 1 shows the normalized defectivity comparison between conventional rinse and filtration used and optimizing rinse used and improving filtration efficiency in ADI and AEI. ADI defectivity in which optimized rinse is applied and improving filtration efficiency achieved 0.04, while that in which conventional rinse and filtration are used defined 1.00, meaning the 96 % of improvement. In addition, AEI defectivity by using optimized rinse and improving of filtration efficiency shows 86 % of reduction as compared with that using conventional rinse and filtration. These results reveal that our novel actions for rinse and material supply show excellent performance for defect reduction. For the other aspect of yield improvement, CD uniformity control is one of the crucial factors. CD variations are comprised of several components such as wafer to wafer CD uniformity, field to field CD uniformity. To achieve CD uniformity target for manufacturing, we have optimized developing process with the latest technology. Then, 15 % of field to field CD uniformity improvement and significant improvement of wafer to wafer CD uniformity are achieved.

  • Continuing Moore's law with EUV lithography

    Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, significant progress has been made in the development of EUV exposure tools, with source power meeting the roadmap target for EUV insertion1 as well as demonstrating improvements in system availability and infrastructure such as mask blank defectivity, pellicle membrane manufacturing, and EUV photoresist materials. This paper reviews the current status and challenges of EUV lithography for High Volume Manufacturing (HVM).

  • A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications

    SRAM plays an integral role in the power, performance, and area of a mobile system-on-a-chip. To achieve low power and high density, extreme ultraviolet (EUV) technology is adopted for the 7nm FinFET technology [3-4]. Conventional ArF immersion with a single exposure for an extreme high-resolution patterning shows the limitation of lithographic patterning. Therefore, multi-patterning lithographic technique is applied to support a high-resolution lithography. However, this also includes process variations due to using multi-pattering masks. Alternatively, EUV offers competitive scaling with a single-mask with the benefit of smaller wavelength, which provides smaller process variation with less additional pattering. Figure 11.2.1 shows a 7nm EUV FinFET 6T high- density (HD) SRAM bitcell with an area of 0.026μm2. The pull-up, pass-gate, and pull-down ratios are 1:1:1 for high-density and low-power applications. Another benefit of EUV technology also features a bi-directional metal layer with a scaled pitch that provides an extra degree of freedom for signal and power routing. Figure 11.2.2 highlights EUV benefits in accordance with bi- directional metals. A uni-directional metal layer requires different metal layer to connect two nets, and have no choice but to support the limited via between two perpendicular metal lines with the limited metal width. A wider metal allows placement of more vias between the metal lines, but it does not demonstrate optimum Power, Performance, and Area (PPA) with redundant parasitic capacitance. However, EUV provides bi-directional metal lines, where the different layers of metal are coherent in the same direction. Therefore, more vias can be placed to reduce the IR-drop with smaller parasitic capacitance and resistance. Figure 11.2.2 illustrates the delay impact versus stacked-via distance in a standard cell array. It shows that the timing penalty is directly proportional to the stacked via distance in a uni- directional metal routing.

  • Enabling manufacturing of sub-10nm generations of integrated circuits with EUV lithography

    A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on our NXE:3400B EUV exposure systems with much reduced rate of source power degradation. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle and progress on the pellicle has resulted in an EUV transmission of 83% at high source power. NXE:3400C will be available in 2019 with a throughput of >155 wph and tighter overlay specifications to further enhance EUV productivity and capability. Additionally, development of a 0.55 NA EUV exposure system has started to enable continued scaling in semiconductor manufacturing.

  • EUV Lithography at Threshold of High-Volume Manufacturing*

    A throughput of >140 wph at a dose of 20 mJ/cm2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k1. ASML has also started to develop a next-generation NA=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing.

  • Stochastic limitations to EUV lithography

    Stochastic-induced roughness continues to be a major concern in the implementation of extreme ultraviolet (EUV) lithography for semiconductor high-volume manufacturing, potentially limiting product yield or lithography throughput or both. For this reason considerable effort has been made in the last 10 years to characterize, understand, and reduce stochastic-induced roughness of post- lithography and post-etch features. Despite these efforts, far too little progress has been made in reducing the effects of stochastics, such as linewidth roughness (LWR), line-edge roughness (LER), local critical dimension uniformity (LCDU), and stochastic defectivity.

  • Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers

    The ability to rapidly detect both printable EUV mask adder defects as well as mask absorber defects across the entire mask image field is a key enabler for EUV lithography. Current optical wafer-based inspection techniques are only capable of detecting repeater defects on a die-to-die basis for chiplets within the image field. Larger server-type chips that encompass the entire mask image field cannot rely on such a scheme, since the presence of the defect in every die prevents their detection. In this paper, a prototype optical wafer defect inspection methodology designed to detect repeater defects over the entire image field, termed die-to-baseline reference die (D2BRD), is investigated. The sensitivity of this inspection technique is demonstrated and compared to eBeam inspection over a range of defect sizes for both opaque and clear type mask absorber programmed defects. Moreover, the D2BRD methodology is used to monitor printing defect adders present in a lithographic defect test mask, as well as 7-nm BEOL layers. Using defect repeater analysis, SEM review and patch image classification of full chip wafer inspections over several mask cycles, the D2BRD scheme is shown to allow the unambiguous identification of mask adder defects, while suppressing random process defects. This methodology has the potential to define the risk assessment of mask adder defects in the absence of an EUV pellicle, and can play an integral part of the wafer print protection strategy.

  • Gradient-Based Source Mask Optimization for Extreme Ultraviolet Lithography

    Extreme ultraviolet (EUV) lithography is the most promising technology for the next generation very-large scale integrated circuit fabrication. EUV lithography invariably introduces distortions in the projected lithographic mask patterns and thus inverse lithography tools are needed to compensate for these. This paper develops two kinds of model-based source and mask optimization (SMO) frameworks, referred to as the parametric SMO and the pixelated SMO, both to provide primary strategies for improving the image fidelity of EUV lithography. In the parametric SMO, the source pattern is defined by a few geometrical parameters. Meanwhile, in the pixelated SMO, the light source is represented by a grid pattern. These two SMO frameworks are established using a nonlinear imaging model that coarsely approximates the optical proximity effect, flare and photoresist effects in an analytic closed- form. In addition, a retargeting method is used to approximately compensate for the mask shadowing effects based on a calibrated shadowing model. Another contribution of this paper is to develop a hybrid cooperative optimization algorithm based on conjugate gradient and compare it to the simultaneous SMO algorithm. It is shown that the hybrid SMO algorithm can achieve superior convergence characteristics and computational efficiency over the simultaneous SMO algorithm.



Standards related to Extreme Ultraviolet Lithography

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Jobs related to Extreme Ultraviolet Lithography

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