IEEE Organizations related to Junctionless Nanowire Transistors

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Conferences related to Junctionless Nanowire Transistors

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems


2019 IEEE 9th International Nanoelectronics Conferences (INEC)

Topics of Interests (but not limited to)• Application of nanoelectronic• Low-dimensional materials• Microfluidics/Nanofluidics• Nanomagnetic materials• Carbon materials• Nanomaterials• Nanophotonics• MEMS/NEMS• Nanoelectronic• Nanomedicine• Nano Robotics• Spintronic devices• Sensor and actuators• Quality and Reliability of Nanotechnology


2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

EDSSC provides as a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the broad areas of electron devices and solid state circuits and systems. The technical program includes invited talks by famous scientists and contributed papers.


2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

The fifth joint EUROSOI-ULIS event will be hosted by IMEP-LaHC in Grenoble, France. The focus of the sessions is on advanced nanoscale devices, including SOI technology.Papers in the following areas are solicited:-Physical mechanisms and innovative SOI-like devices.-New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.-Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.-New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc. Advanced test structures and characterization techniques, reliability and variability assessment techniques for new materials and novel devices.

  • 2018 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The fourth joint EUROSOI-ULIS event will be hosted by the University of Granada in Granada, Spain. The focus of the sessions is on advanced nanoscale devices, including SOI technology. Papers in the following areas are solicited:Physical mechanisms and innovative SOI-like devices.New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.

  • 2017 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    EUROSOI-ULIS is a European Conference that resulted from the merging in 2015 of the two sister Conferences: EUROSOI and ULIS. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers related to the More Moore, More than Moore and Beyond CMOS research fields (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2016 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    In order to further increase audience and scientific impact, the two sister conferences ULIS and EUROSOI have decided to merge in 2015 and the first joint EUROSOI-ULIS event was a sucess. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The future landscape of the micro-nano-electronics will essentially contain extremely miniaturized fully depleted devices such as planar SOI or narrow FinFETs and nanowires. These aspects were covered in both ULIS and EuroSOI conferences, leading to significant overlap. In order to further increase audience and scientific impact, the two sister conferences have decided to merge in 2015. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2014 15th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices for More Moore (CMOS, Memories), More than Moore (Nanosensing, Energy Harvesting, RF, ...) and Beyond-CMOS (Nanowires, CNT, Graphene, Tunnel FET, ...) applications.

  • 2013 14th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)

    ULIS is an annual conference that regroups the European research community working on advanced silicon devices and nanodevices. It has been held annually since 2000. The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2009 10th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2008 9th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices for switches, memory and novel applications such as sensors and bioelectronics.


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Periodicals related to Junctionless Nanowire Transistors

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Most published Xplore authors for Junctionless Nanowire Transistors

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Xplore Articles related to Junctionless Nanowire Transistors

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Modeling the Interface Trap Density Influence on Junctionless Nanowire Transistors Behavior

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018

This work proposes a methodology for the modeling of the interface traps influence on the electrical characteristics of Junction less Nanowire Transistors. The interface traps can influence the electrical behavior of junction less in both on-and off-states due to the partial depletion regime operation, in which the surface potential varies with the applied biases. The methodology validation is performed using ...


Highly Sensitive Juntionless Nanowire Transistor Biosensor in Detecting Breast Tumor Marker

2018 IEEE SENSORS, 2018

Here, we demonstrate a real-time, ultrasensitive junctionless nanowire transistor (JNT) biosensor for breast tumor marker sensing. The proposed JNT biosensor with low-frequency noise, small subthreshold slope and high channel mobility has great potential to solve the key problem of poor signal-to-noise ratio or low sensitivity in current nanobiosensor. The JNT with CMOS- compatibility is made using a (111) silicon-on-insulator (SOi) ...


Cryogenic Characteristics of Ge channel Junctionless Nanowire Transistors

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018

We fabricated high performance Ge channel junctionless nanowire transistors (JNTs) and demonstrated their cryogenic characteristics from 90 to 270 K. The results show that the leakage current is more sensitive to temperature than drive current. The slope of threshold voltage shift with temperature is estimated to be 2.5 mV/K. Low field mobility decreases with reduced temperature and is found to ...


Experimental Analysis of Self-Heating Effects Using the Pulsed IV Method in Junctionless Nanowire Transistors

2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 2018

This paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for ...


Lateral spacers influence on the effective channel length of junctionless nanowire transistors

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017

This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.


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Educational Resources on Junctionless Nanowire Transistors

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IEEE-USA E-Books

  • Modeling the Interface Trap Density Influence on Junctionless Nanowire Transistors Behavior

    This work proposes a methodology for the modeling of the interface traps influence on the electrical characteristics of Junction less Nanowire Transistors. The interface traps can influence the electrical behavior of junction less in both on-and off-states due to the partial depletion regime operation, in which the surface potential varies with the applied biases. The methodology validation is performed using numerical simulations, where the drain current, the trans conductance, the threshold voltage and the subthreshold slope have been analyzed. The modeling considering different traps energetic distributions has been demonstrated.

  • Highly Sensitive Juntionless Nanowire Transistor Biosensor in Detecting Breast Tumor Marker

    Here, we demonstrate a real-time, ultrasensitive junctionless nanowire transistor (JNT) biosensor for breast tumor marker sensing. The proposed JNT biosensor with low-frequency noise, small subthreshold slope and high channel mobility has great potential to solve the key problem of poor signal-to-noise ratio or low sensitivity in current nanobiosensor. The JNT with CMOS- compatibility is made using a (111) silicon-on-insulator (SOi) wafer with a low-cost and top-down fabrication approach. The fabricated device shows excellent electrical properties and high sensitivity for recognizing breast tumor marker (the CEA protein) as low as 1fg/ml.

  • Cryogenic Characteristics of Ge channel Junctionless Nanowire Transistors

    We fabricated high performance Ge channel junctionless nanowire transistors (JNTs) and demonstrated their cryogenic characteristics from 90 to 270 K. The results show that the leakage current is more sensitive to temperature than drive current. The slope of threshold voltage shift with temperature is estimated to be 2.5 mV/K. Low field mobility decreases with reduced temperature and is found to be limited by both Coulomb scattering and neutral defects scattering.

  • Experimental Analysis of Self-Heating Effects Using the Pulsed IV Method in Junctionless Nanowire Transistors

    This paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for all cases current degradation lower than 4.5% is seen.

  • Lateral spacers influence on the effective channel length of junctionless nanowire transistors

    This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.

  • One-Dimensional Transport through Two Subbands in Silicon Junctionless Nanowire Transistors

    We experimentally investigate the one-dimensional transport through two subbands in silicon junctionless nanowire transistors. The drain-voltage dependent properties of one-dimensional transport was discussed in detail. The quantized drain current and peak-like transconductance can be identified at low drain voltage, resulting from the filling of discrete subbands. At high drain voltage, the drain current exhibits linear relationship with the gate voltage at each current-carrying mode. Moreover, the transconductance vs. gate voltage displays step-like shapes.



Standards related to Junctionless Nanowire Transistors

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Jobs related to Junctionless Nanowire Transistors

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