IEEE Organizations related to Crystal Growth

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Conferences related to Crystal Growth

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2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


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Periodicals related to Crystal Growth

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Most published Xplore authors for Crystal Growth

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Xplore Articles related to Crystal Growth

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Application of a distributed generalised predictive controller for adaptive control of a crystal growth process

International Conference on Control 1991. Control '91, 1991

Describes a distributed generalized predictive controller (DGPC) which has been successfully applied to a crystal growth process based on the temperature oscillation method. The proper selection of the sampling period for every loop is made by a supervisor module. Good quality control has been achieved in the two possible modes of operation-periodically oscillating source temperature and periodically oscillating crystal temperature. ...


The design of a microgravity payload: the solution growth facility

IEE Colloquium on Satellite Instrumentation, 1988

Solution growth facility is a multiuser experimental equipment capable of automatically growing large single crystals from solutions; SGF accommodates an experiment for the measurement of SORET coefficient of some liquids which is the ratio of the thermal diffusion coefficient and the isothermal diffusion coefficient. SGF configuration employs four reactors filled with various solutions; three of them are operated in an ...


Single Crystal Growth of BaGa4S7and BaGa4Se7by the Horizontal Gradient Freeze Technique

2018 Conference on Lasers and Electro-Optics (CLEO), 2018

Horizontal gradient freeze growth in transparent furnaces yields extremely favorable crystallization of high-optical quality barium thiogallate and sellenogallate: two new nonlinear optical crystals with wide band gaps, deep infrared transparency, and moderately high nonlinear coefficients.


Laterally seeded epitaxy enhancement in zone melting recrystallisation by increase of silicon film thickness

Electronics Letters, 1989

Polycrystalline silicon films with various thickness on SiO/sub 2/ with seeding windows were recrystallised at high scan speeds using RF-induced graphite strip heating. It has been found that the laterally seeded epitaxial widths of defect-free silicon films on SiO/sub 2/ are 40 and 53 mu m for film thicknesses of 350 and 500 nm, respectively. For a 1100 nm-thick silicon ...


Simulation of Planar Nanowire Growth Based on AIIIBV Semiconductors

2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), 2019

The scheme of planar GaAs nanowires growth according to the vapor-liquid-solid mechanism on the base of Monte Carlo simulation was proposed. The influence of substrate orientation and the properties of surface passivation layer on planar nanocrystal morphology was investigated. The film-mask optimal characteristics were found to ensure the stability of planar nanowire growth on the GaAs(111)A surface.


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Educational Resources on Crystal Growth

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IEEE-USA E-Books

  • Application of a distributed generalised predictive controller for adaptive control of a crystal growth process

    Describes a distributed generalized predictive controller (DGPC) which has been successfully applied to a crystal growth process based on the temperature oscillation method. The proper selection of the sampling period for every loop is made by a supervisor module. Good quality control has been achieved in the two possible modes of operation-periodically oscillating source temperature and periodically oscillating crystal temperature. Long term adaptive control shows stability and high performance of the DGPC during the whole experiment.<>

  • The design of a microgravity payload: the solution growth facility

    Solution growth facility is a multiuser experimental equipment capable of automatically growing large single crystals from solutions; SGF accommodates an experiment for the measurement of SORET coefficient of some liquids which is the ratio of the thermal diffusion coefficient and the isothermal diffusion coefficient. SGF configuration employs four reactors filled with various solutions; three of them are operated in an isothermal temperature mode and the fourth reactor is designed for the study of separation of liquids with a temperature gradient. The facility incorporates data handling and control electronics based on the Z80 microprocessor.<>

  • Single Crystal Growth of BaGa4S7and BaGa4Se7by the Horizontal Gradient Freeze Technique

    Horizontal gradient freeze growth in transparent furnaces yields extremely favorable crystallization of high-optical quality barium thiogallate and sellenogallate: two new nonlinear optical crystals with wide band gaps, deep infrared transparency, and moderately high nonlinear coefficients.

  • Laterally seeded epitaxy enhancement in zone melting recrystallisation by increase of silicon film thickness

    Polycrystalline silicon films with various thickness on SiO/sub 2/ with seeding windows were recrystallised at high scan speeds using RF-induced graphite strip heating. It has been found that the laterally seeded epitaxial widths of defect-free silicon films on SiO/sub 2/ are 40 and 53 mu m for film thicknesses of 350 and 500 nm, respectively. For a 1100 nm-thick silicon film, the epitaxy width reaches 100 mu m. The scan direction of the strip heater was perpendicular to seeding windows in the experiments.<>

  • Simulation of Planar Nanowire Growth Based on AIIIBV Semiconductors

    The scheme of planar GaAs nanowires growth according to the vapor-liquid-solid mechanism on the base of Monte Carlo simulation was proposed. The influence of substrate orientation and the properties of surface passivation layer on planar nanocrystal morphology was investigated. The film-mask optimal characteristics were found to ensure the stability of planar nanowire growth on the GaAs(111)A surface.

  • Advances in CdMnTe Nuclear Radiation Detectors Development

    Cadmium manganese telluride (CdMnTe) is one of the tertiary compounds of cadmium telluride (CdTe) that has shown great promise in the detection of X-rays and gamma-rays at room temperature without cryogenic cooling. While cadmium zinc telluride (CdZnTe) wide band gap semiconductor has been widely researched and developed to high resolution detector, CdMnTe has comparatively received less effort in development. It is however expected that a more homogeneous CdMnTe crystal with lesser defects than CdZnTe will be easier to grow since the segregation coefficient of Mn in CdTe is closer to unity than that of Zn. This paper briefly reviews the material properties and growth techniques for CdMnTe and presents progress in the development of CdMnTe detectors. Three successive Bridgman growths of CdMnTe resulted in detector grade crystals.

  • Frequency Comb Stabilization of a 50-fs Thin-Disk Laser Oscillator Operating in a Strongly SPM-broadened Regime

    An Yb:LuO thin-disk laser generating 50-fs pulses at 4-W average output power and 50-MW intracavity peak power is CEO stabilized with 200-mrad integrated phase noise. Effects of repetition-rate stabilization onto the CEO noise are discussed.

  • Nonlinear Generalized Predictive Control of the Crystal Diameter in CZ-Si Crystal Growth Process Based on Stacked Sparse Autoencoder

    A new control structure with constant pulling speed for growing high-quality crystal in the Czochralski (CZ) method is presented in this brief. In this control structure, the pulling speed is not involved in the controlling of crystal diameter and only the temperature is used as the control quantity. Due to the time delay and the nonlinearity relationship are commonly involved between the temperature and crystal diameter, which make the diameter control difficult and complicated, a generalized predictive controller (GPC) based on the stacked sparse autoencoder (SSAE) is proposed under the new control structure. The time delay is obtained by using the correlation identification algorithm, the input order and output order are determined by the Lipchitz quotients algorithm, and the prediction model is trained by SSAE. Combining the SSAE with the nonlinear GPC algorithm, the control law of the temperature is calculated for diameter control. The simulation result verifies the correctness of the proposed control algorithm. The experimental result indicates that the new control structure with constant pulling speed is more conducive to growing high-quality crystal, avoiding the fluctuation of pulling speed. The proposed SSAE-based GPC algorithm can accurately track the reference diameter. The studies in this brief provide a feasible strategy for growing large size and high-quality crystal in the CZ method.

  • Effect of Deposited Pressure on the CdTe Thin Films by Closed Space Sublimation Method

    A home-made CSS system in which the CdTe source was above the substrate was used to deposit CdTe thin film. The pressure (3.7~260 Pa) was controlled by nitrogen. The experimental results showed that the deposited rate increased with the decreasing pressure. As the pressure decreased, the center of the film was thicker than that in the edge. Accordingly, the micromorphology obtained by SEM showed that the crystal grain size became larger while the orientation was more random with the decreasing deposition pressure analyzed by XRD. The Non-stoichimometric composition shift of CdTe thin films was characterized by EDX and the Cd/ Te atomic ratio was 0.87± 0.04, 0.88±0.08 and 0.93 ±0.13 as the increasing pressure in our experiments. The calculated results showed that Te-5p orbitals of CdTe with Cd vacancy increased comparing with the bulk CdTe at G-point.

  • Growth and piezoelectric properties of Sr3Ta(Al0.5Ga0.5)3Si2O14crystals with langasite structure

    New piezoelectric crystal Sr3Ta(Al0.5Ga0.5)3Si2O14(STAGS) with ordered langasite structure was successfully grown by Czochralski method. The lattice parameters of STAGS were a = 8.269 Å, c = 5.036 Å. The rocking curve evident the crystal quality declined and the diffraction peak shift slightly from top to bottom. Element analysis revealed the Al3+was not easy to occupy the C site as Ga3+in crystal. The piezoelectric coefficients d11of STAGS was found to be 5.1pC/N and the resistivity was high up to 4.94×106Ω·m for top part and 7.08×106Ω·cm for bottom part at 700°C, respectively.



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