IEEE Organizations related to Static Induction Transistors

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Conferences related to Static Induction Transistors

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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC)

As one of the most important annual academic conferences in communication science andtechnology for Chinese not only Cross Strait Quad -Region but also all over the world.


2019 IEEE Vehicle Power and Propulsion Conference (VPPC)

Batteries; charge/discharge; ultra-capacitors; flywheels; hybrid energy storage; fuel cells; auxiliary power; SoC and SoH; solar vehicles; Converters; rectifiers; inverters; motor drives; power semiconductors; EMI/EMC; generators; integrated starter/alternators; drive trains; electro-magnetic compatibility; power architectures; 42V PowerNet; X-by-wire; electric power steering; hydraulic powertrain; Active suspension; cruise controls; remote sensing; wireless sensors; vehicular networking; cooperative driving; intelligent & autonomous vehicles; active and passive safety; embedded operation; driver assistance; virtual/digital Power split; fault tolerance; energy management;driving pattern recognition; driver modelling; shifting control; Vehicular systems/components; CAD/CAE; virtual prototyping; driving cycle design; ecodriving; life cycle analysis; EV infrastructure; V2X; on board chargers; AC & DC infrastructure; fast, superfast, wireless, smart & conductive charging; Smart Grid

  • 2018 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Batteries; charge/discharge; ultra-capacitors; flywheels; hybrid energy storage; fuel cells; auxiliary power; SoC and SoH; solar vehicles; Converters; rectifiers; inverters; motor drives; power semiconductors; EMI/EMC; generators; integrated starter/alternators; drive trains; electro-magnetic compatibility; power architectures; 42V PowerNet; X-by-wire; electric power steering; hydraulic powertrain; Active suspension; cruise controls; remote sensing; wirelesssensors; vehicular networking; cooperative driving; intelligent & autonomous vehicles; active & passive safety; embedded operation; driver assistance; virtual/digital Power split; fault tolerance; energy management; driving pattern recognition; driver modelling; shifting control; Vehicular systems/components; CAD/CAE; virtual prototyping; driving cycle design; ecodriving; life cycle analysis; EV infrastructure; V2X; on board chargers; AC & DC infrastructure; fast, superfast, wireless, smart & conductive charging; Smart Grid

  • 2017 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Batteries; charge/discharge; ultra-capacitors; flywheels; hybrid energy storage; fuel cells;auxiliary power; SoC and SoH; solar vehicles; Converters; rectifiers; inverters; motor drives; power semiconductors; EMI/EMC; generators; integrated starter/alternators; drive trains; electro-magnetic compatibility; power architectures; 42V PowerNet; X-by-wire; electric power steering; hydraulic powertrain; Active suspension; cruise controls; remote sensing; wireless sensors; vehicular networking; cooperative driving; intelligent & autonomous vehicles; active & passive safety; embedded operation; driver assistance; virtual/digital Power split; fault tolerance; energy management; driving pattern recognition; driver modelling; shifting control; Vehicular systems/components; CAD/CAE; virtual prototyping; driving cycle design; ecodriving; life cycle analysis; EV infrastructure; V2X; on board chargers; AC & DC infrastructure; fast, superfast, wireless, smart & conductive charging; Smart Grid

  • 2016 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Batteries; charge/discharge; ultra-capacitors; flywheels; hybrid energy storage; fuel cells;auxiliary power; SoC and SoH; solar vehiclesConverters; rectifiers; inverters; motor drives; power semiconductors; EMI/EMC; generators;integrated starter/alternators; drive trains; electro-magnetic compatibility; power architectures;42V PowerNet; X-by-wire; electric power steering; hydraulic powertrainActive suspension; cruise controls; remote sensing; wireless sensors; vehicular networking;cooperative driving; intelligent & autonomous vehicles; active & passive safety; embeddedoperation; driver assistance; virtual/digital Power split; fault tolerance; energy management; driving pattern recognition; driver modelling;shifting control; Vehicular systems/components; CAD/CAE; virtual prototyping; driving cycledesign; ecodriving; life cycle analysis; EV infrastructure; V2X; on board chargers; AC & DCinfrastructure; fast, superfast, wireless, smart & conductive charging; Smart Grid

  • 2015 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Batteries; charge/discharge; ultra-capacitors; flywheels; hybrid energy storage; fuel cells; auxiliary power; SoC and SoH; solar vehicles; Converters; rectifiers; inverters; motor drives; power semiconductors; EMI/EMC; generators; integrated starter/alternators; drive trains; electro-magnetic compatibility; power architectures; 42V PowerNet; X-by-wire; electric power steering; hydraulic powertrain; Active suspension; cruise controls; remote sensing; wireless sensors; vehicular networking; cooperative driving; intelligent & autonomous vehicles; active & passive safety; embedded operation; driver assistance; virtual/digital; Power split; fault tolerance; energy management; driving pattern recognition; driver modelling; shifting control; Vehicular systems/components; CAD/CAE; virtual prototyping; driving cycle design; ecodriving; life cycle analysis; EV infrastructure; V2X; on board chargers; AC & DC infrastructure; fast, superfast, wireless, smart & conductive charging; Smart Grid

  • 2014 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Vehicular Electric Power Systems and Loads Vehicular Power Electronics and Motor Drives Advanced Vehicles Energy Storage Components / Systems Vehicular Electronics Modeling, Analysis, Dynamics and Control Intelligent Transportation SystemsElectric VehiclesHybrid Electric VehiclesFuel Cell VehiclesMULTIPHASE DRIVESADVANCED BATTERY TECHNOLOGIES FOR TRACTION APPLICATIONSDESIGN HEV POWER TRAINSFUEL CELL VEHICLESINTELLIGENT VEHICLE TECHNOLOGIES and ITSSMART GRIDS and EVs

  • 2013 IEEE Vehicle Power and Propulsion Conference (VPPC)

    VGreen Car - Electric Propelled System 1. HEV, Plug-In HEV, BEV System Design 2. Fuel Cell and FCEV/FCHEV System Design 3. Electronic Actuator and Electric Machinery for Vehicle Applications 4. Power Electronics and Converter for Vehicle Applications 5. Motor Drives for Vehicle Applications 6. Battery, Energy Storage System and their Management Systems for xEVs 7. Renewable Energy and Auxiliary Power Unit (APU) 8. Advanced Powertrain Controls for xEVs 9. Charging System including Interface Couplers 10. Smart Grid and Electrical Infrastructure for xEVs 11. Other Applications Intelligent Car 12. Intelligent Vehicle for Safety (included V2V) 13. Telematics (included V2I) 14. Network and Imbedded System for Vehicle 15. Electromagnetic Compatibility (EMC) in xEVs 16. Other Applications High Efficiency Transportation 17. Conventional Vehicle System Design 18. Advanced Automotive Power and Propulsion 19. Railway, Ship, Air, and Space Vehicles 20. Mechanical, Hydraulic

  • 2012 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Topic 1: HEV, BEV, FCEV and Plug-In EV System Design. Topic 2: Automotive Actuator and Electric Machinery Topic 3: Power Converter for Automotive Applications Topic 4: Motor Drives for Vehicle Applications Topic 5: Energy and Power Management for xEVs Topic 6: Charging System including Interface Couplers Topic 7: Smart Grid and Electrical Infrastructure Topic 8: Intelligent Vehicle for Safety (included V2V) Topic 9: Telematics (included V2I) Topic 10: Imbedded System for Vehicle Topic 11: Electromagnetic Compatibility (EMC) in xEVs Topic 12: Conventional Vehicle System Design Topic 13: Advanced Automotive Power and Propulsion Topic 14: Railway, Ship, Air, and Space Vehicles Topic 15: Mechanical, Hydraulic and Pneumatic Systems Topic 16: Modeling, Simulation, Emissions and Control

  • 2011 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Vehicular Power Electronics, Motor Drives, and Electric Machines; Electric and Hybrid Electric Vehicles; Plug-in Hybrid Electric Vehicles, Smart Grid, and Electrical Infrastructure; Energy Storage; Fuel Cell and Fuel Cell Hybrid Vehicles; Land Vehicles; Sea, Undersea, Air, and Space Vehicles; Mechanical, Hydraulic, and Pneumatic Systems; Modeling, Simulation, Emissions, and Control.

  • 2010 IEEE Vehicle Power and Propulsion Conference (VPPC)

    Power Electronics, Electric Drives, Electric Vehicles, Hybrid vehicles, motion control, transportation systems

  • 2009 IEEE Vehicle Power and Propulsion Conference (VPPC)

    The 2009 IEEE Vehicle Power and Propulsion Conference (VPPC09) will be held in Dearborn, Michigan, USA. The conference is co-sponsored by IEEE Power Electronics Society (PELS) and IEEE Vehicular Technology (VT). This year the conference will feature the theme of Sustainability: hybrid, plug-in, fuel cell and battery technology. The conference also features keynote speakers from top executives from the major automotive companies, and a banquet at the Henry Ford Museum.

  • 2008 IEEE Vehicle Power and Propulsion Conference (VPPC)

    The IEEE Vehicle Power and Propulsion Conference (VPPC) is a top-level international conference in the field of electric/hybrid vehicles, co-sponsored by IEEE Power Electronics Society and IEEE Vehicular Technology Society. It addresses the state-of-the-art and recent achievements in vehicular power and propulsion systems, automotive energy storage systems, electric/hybrid vehicles, and vehicular electronics.

  • 2007 IEEE Vehicle Power and Propulsion Conference (VPPC)

  • 2006 IEEE Vehicle Power and Propulsion Conference (VPPC)

  • 2005 IEEE Vehicle Power and Propulsion Conference (VPPC)


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Periodicals related to Static Induction Transistors

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Most published Xplore authors for Static Induction Transistors

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Xplore Articles related to Static Induction Transistors

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New phase-shifted soft-switching PWM high-frequency series resonant inverters topologies and their practical evaluations

1994 Fifth International Conference on Power Electronics and Variable-Speed Drives, 1994

This paper is concerned with a novel control scheme for full-bridge series- resonant phase-shifted PWM inverter. This control scheme is based upon varying inverter frequency adaptively according to load circuit parameters and phase- shifted angle phi . As a result, switching losses and stresses are minimized under phase-shifted power regulation. High frequency series-resonant inverters using this control technique and static ...


Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor

IEEE Electron Device Letters, 2018

A 35-A cascode configuration of a drain-tosource breakdown voltage of 978 V utilizing an silicon carbide (SiC) buried gate static induction transistor (BGSIT) and low voltage Si-MOSFET (SiC-BGSIT cascode) has been experimentally demonstrated for the first time. The SiC-SIT is mounted with the Si-MOSFET in an originally designed resin 4pin package. The ON-resistance RDS(ON)of this device exhibits 34.3 mΩ at ...


Transient temperature evaluation during switching process in static induction transistor

1994 Fifth International Conference on Power Electronics and Variable-Speed Drives, 1994

In this paper a 2-D electrothermal analysis of a static induction transistor (SIT) is presented. Due to its excellent switching performances, the SIT has been used in a wide range of electronics applications in recent years. The main difficulties in applications of SIT are thermal problems caused by high voltage drop and power losses in the ON-state. In order to ...


Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

IEEE Transactions on Electron Devices, 2005

In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding of carrier transport under electrostatic discharge (ESD) conditions. Special test devices were designed and manufactured using Infineon's SPT5 technology, namely: a bipolar junction transistor (BJT), a static-induction transistor (SIT) and a vertical DMOS transistor (VDMOS), ...


Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

IEEE Journal of the Electron Devices Society, 2017

The rapid development of RF power electronics requires amplifier operating at high frequency with high output power. GaN-based HEMTs as RF devices have made continuous progress in the last two decades showing great potential for working up to G band range. However, vertical structure is preferred to obtain higher output power. In this paper, we have designed and fabricated GaN ...


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Educational Resources on Static Induction Transistors

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IEEE-USA E-Books

  • New phase-shifted soft-switching PWM high-frequency series resonant inverters topologies and their practical evaluations

    This paper is concerned with a novel control scheme for full-bridge series- resonant phase-shifted PWM inverter. This control scheme is based upon varying inverter frequency adaptively according to load circuit parameters and phase- shifted angle phi . As a result, switching losses and stresses are minimized under phase-shifted power regulation. High frequency series-resonant inverters using this control technique and static induction power devices are practically applied to a 30 kHz-500 kHz high-power induction heating and melting power supply. The trially-produced inverter breadboards using static induction transistors are successfully demonstrated and discussed from a practical point of view. Finally, zero-voltage soft-switching effects of lossless capacitive snubbers are mentioned for an inverter circuit design which is incorporated into one switching leg of the full-bridge configuration.<>

  • Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor

    A 35-A cascode configuration of a drain-tosource breakdown voltage of 978 V utilizing an silicon carbide (SiC) buried gate static induction transistor (BGSIT) and low voltage Si-MOSFET (SiC-BGSIT cascode) has been experimentally demonstrated for the first time. The SiC-SIT is mounted with the Si-MOSFET in an originally designed resin 4pin package. The ON-resistance RDS(ON)of this device exhibits 34.3 mΩ at room temperature, which is 50% of the commercial SiC MOSFET of the similar rating. The temperature dependence of RDS(ON)and gate threshold voltage has been revealed. It has been suggested that when compared with the SiC-JFET cascode with the similar rating, the BGSIT cascode has a soft dVds/dt property with a relatively small switching loss.

  • Transient temperature evaluation during switching process in static induction transistor

    In this paper a 2-D electrothermal analysis of a static induction transistor (SIT) is presented. Due to its excellent switching performances, the SIT has been used in a wide range of electronics applications in recent years. The main difficulties in applications of SIT are thermal problems caused by high voltage drop and power losses in the ON-state. In order to estimate the temperature rise inside the semiconductor structure and to examine the influence of gate driving on power losses, a 2-D electrical and thermal simulation of SIT working in a simple circuit has been performed.<>

  • Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

    In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding of carrier transport under electrostatic discharge (ESD) conditions. Special test devices were designed and manufactured using Infineon's SPT5 technology, namely: a bipolar junction transistor (BJT), a static-induction transistor (SIT) and a vertical DMOS transistor (VDMOS), all of them with a cylindrical geometry. The measurements were carried out using a customized measurement setup that allows very high operating temperatures to be reached. A novel extraction methodology allowing for the determination of the impact-ionization coefficient against electric field and lattice temperature has been used. The experiments, carried out up to 773 K, confirm a previous theoretical investigation on impact-ionization, and widely extend the validity range of the compact model here proposed for implementation in device simulation tools. This is especially useful to predict the failure threshold of ESD-protection and power devices.

  • Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

    The rapid development of RF power electronics requires amplifier operating at high frequency with high output power. GaN-based HEMTs as RF devices have made continuous progress in the last two decades showing great potential for working up to G band range. However, vertical structure is preferred to obtain higher output power. In this paper, we have designed and fabricated GaN static induction transistor using the self-aligned technology, which was accomplished mainly by using a SiO2 lift-off step in buffered oxide etch (BOE). By optimizing the time in ultrasonic bath and in BOE, the SiO2 and the metal on top were removed completely which resulted in the gate metal only on the sidewalls. Both dry and wet etch techniques were investigated to reduce the gate leakage on the etched surface. The low power dry etch combined with the tetramethylammonium hydroxide wet etch can effectively reduce the etch damages, decrease the gate leakage and enhance the gate control over the channel.

  • Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

    GaAs static induction transistors (SIT) with 10-nm scale channel and with a 100-nm channel were fabricated with molecular layer epitaxy (MLE). Area- selective epitaxy of GaAs/AlGaAs/GaAs was used for the gate. Temperature dependence of current-voltage (I-V) characteristics of the 100-nm SIT indicates ballistic injection of electrons. In the 10-nm scale SIT, electrons are transported ballistically in the drain-side electric field. Direct tunneling is responsible for the transport through the potential barrier. It is indicated by the temperature dependence and by the electroluminescence spectrum. Electron transport in the 10-nm scale SIT is nearly scattering-free. The plausible estimation of the electron transit time is 2/spl middot/10/sup -14/ s; the worst case estimation based on saturated drift velocity gives 1/spl middot/10/sup -13/ s. It makes the ISITs suitable for THz applications. Multiple area-selective MLE GaAs regrowth was used as a tool for automatic definition of the channel length.



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