IEEE Organizations related to Nanoribbons

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Conferences related to Nanoribbons

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2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems


2019 IEEE 9th International Nanoelectronics Conferences (INEC)

Topics of Interests (but not limited to)• Application of nanoelectronic• Low-dimensional materials• Microfluidics/Nanofluidics• Nanomagnetic materials• Carbon materials• Nanomaterials• Nanophotonics• MEMS/NEMS• Nanoelectronic• Nanomedicine• Nano Robotics• Spintronic devices• Sensor and actuators• Quality and Reliability of Nanotechnology


2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

EDSSC provides as a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the broad areas of electron devices and solid state circuits and systems. The technical program includes invited talks by famous scientists and contributed papers.


2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

The RSM conference series has become the preeminent international forum on semiconductor electronics embracing all aspects of the semiconductor technology from circuit device, modeling and simulation, photonics and sensor technology, MEMs technology, process and fabrication packaging technology and manufacturing, failure analysis and reliability, material and devices and nanoelectronics.

  • 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

    The RSM conference series has become the preeminent international forum on semiconductorelectronics embracing all aspects of the semiconductor technology from circuit device, modelingand simulation, photonics and sensor technology, MEMs technology, process and fabrication,packaging technology and manufacturing, failure analysis and reliability, material and devicesand nanoelectronics.

  • 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

    The RSM conference series has become the preeminent international forum on semiconductor electronics embracing all aspects of the semiconductor technology from circuit device, modeling and simulation, photonics and sensor technology, MEMs technology, process and fabrication, packaging technology and manufacturing, failure analysis and reliability, material and devices and nanoelectronics.

  • 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

    This is the fourth RSM organized by the Electron Devices Chapter of IEEE Malaysia Section and technically co-sponsored by Electron Devices Society. Over the last eighteen years, RSM has become the preeminent international forum on semiconductor electronics embracing all aspects of the semiconductor technology

  • 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

    This 2011 regional symposium is aimed at bringing together researchers from industry and academia to explore various issues and trends in the field of micro and nanoelectronics.


2019 Silicon Nanoelectronics Workshop (SNW)

-Sub-10 nm transistors employing conventional and novel architecture including non-classical structures, novel channel and source/drain materials, non-thermal injection mechanisms- Device physics of nanodevices including quantum effects, nonequilibrium and ballistic transport- Modeling and simulation of nanoscale devices- Device scaling issues including doping fluctuations and atomic granularity- Novel devices and architectures for quantum and neuromorphic computing - Optoelectronics using silicon nanostructures- Devices for heterogeneous integration on silicon, including 2D materials, Ge and III-V, CNT, spin-based devices, MEMS and NEMS- Environmental devices which contributes to low-carbon society (wireless sensors, energy harvesters, steep slope devices)


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Xplore Articles related to Nanoribbons

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Terahertz Spectroscopy of 2D Materials

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018

We use time-resolved THz spectroscopy to study the effects of photoexcitation on conductivity and ultrafast carrier in 2D layered materials with different electronic properties: metallic transition metal carbides (MXenes) [1] and semiconducting germanium sulfide (GeS) [2].


Positive Exchange Bias in Potassium Split Graphene Nanoribbons

2016 International Conference of Asian Union of Magnetics Societies (ICAUMS), 2016

We demonstrate on the effect of the negative cooling magnetic field on the exchange bias properties of the graphene nanoribbons (GNRs).


Studies on Surface Plasmon Dispersion Theory on the Bilayer Graphene Ribbon Arrays Metasurface

2018 IEEE International Conference on Computational Electromagnetics (ICCEM), 2018

Graphene surface plasmon polaritons (SPP) provide a promising platform to develop a series of new photonic, plasmonic and optoelectronic devices from terahertz to optic spectrum owing to its excellent properties. In this paper, a new kind of graphene metasurfaces, i.e., bilayer graphene ribbon arrays separated by a dielectric gap is proposed. The general dispersion theory of SPP mode on the ...


Effects of Edge Termination on the Electronic Properties of Zigzag Boron Nitride Nanoribbons

2018 10th International Conference on Electrical and Computer Engineering (ICECE), 2018

Two-dimensional hexagonal boron nitride has attracted the eyes of many scientists due to its very high thermal and electrical stability. This paper reports the effects of edge termination by non-metallic (NM) atoms (H, P, F, and O) on the electronic properties of zigzag boron nitride nanoribbon (ZBNNR). First principles calculations were performed using local density approximation (LDA) to calculate the ...


Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 2018

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this ...


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  • Terahertz Spectroscopy of 2D Materials

    We use time-resolved THz spectroscopy to study the effects of photoexcitation on conductivity and ultrafast carrier in 2D layered materials with different electronic properties: metallic transition metal carbides (MXenes) [1] and semiconducting germanium sulfide (GeS) [2].

  • Positive Exchange Bias in Potassium Split Graphene Nanoribbons

    We demonstrate on the effect of the negative cooling magnetic field on the exchange bias properties of the graphene nanoribbons (GNRs).

  • Studies on Surface Plasmon Dispersion Theory on the Bilayer Graphene Ribbon Arrays Metasurface

    Graphene surface plasmon polaritons (SPP) provide a promising platform to develop a series of new photonic, plasmonic and optoelectronic devices from terahertz to optic spectrum owing to its excellent properties. In this paper, a new kind of graphene metasurfaces, i.e., bilayer graphene ribbon arrays separated by a dielectric gap is proposed. The general dispersion theory of SPP mode on the structure is investigated by a modal expansion method. Solving field expressions on different regions and using proper periodic boundary conditions, the analytical dispersion expressions of SPP mode are obtained on the bilayer graphene ribbon arrays for the first time. With this result, the SPP characteristics of dispersion and propagation loss can be calculated and analyzed with graphene and structural parameters. The proposed SPP modes on the bilayer graphene ribbon arrays metasurface can open up new ways to develop some functional devices such as low-loss sub-wavelength plasmonic waveguide, planar retroreflectors and the enhanced terahertz radiation source.

  • Effects of Edge Termination on the Electronic Properties of Zigzag Boron Nitride Nanoribbons

    Two-dimensional hexagonal boron nitride has attracted the eyes of many scientists due to its very high thermal and electrical stability. This paper reports the effects of edge termination by non-metallic (NM) atoms (H, P, F, and O) on the electronic properties of zigzag boron nitride nanoribbon (ZBNNR). First principles calculations were performed using local density approximation (LDA) to calculate the electronic properties of ZBNNR. Several possible configurations have been considered such as ZBNNR with symmetric edge termination, asymmetric edge termination, and half bare edge. It was found that ZBNNR with O termination exhibits metallic property regardless of termination cases. ZBNNR with P termination exhibits semi-metallic massless dirac fermion behavior which is also independent of the termination cases. However, ZBNNR with H and F terminations exhibit metallic or semiconducting properties depending on the termination cases. These findings are very much important to understand the modulated electronic properties of ZBNNR as well as applications of these materials in nanoelectronic devices.

  • Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

    Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum (Al) oxide layer (approximately 5 nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the Al-oxide. Graphene nanoribbons (with widths as small as 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon the Al-oxide layer. These stacks served as etch-stops while the unprotected remnants of Al-oxide and graphene were etched in a CF4/ O2 plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the graphene before and after microfabrication. Current-versus-voltage traces of the nanodevices exhibited the characteristic conductance minima corresponding to the charge-neutrality point of graphene. Radio frequency power detection experiments at this DC biasing point revealed a detection sensitivity of 0.14 mV/mW.

  • Perfect spin-filter and negative differential resistance for a carbon chain device with defective graphene nanoribbons connected

    In order to study the characteristics of carbon chains and defects in graphene nanoribbons, we studied the electronic transport characteristics for a carbon chain device with defective graphene nanoribbon connected. And density functional theory (DFT) combined with the non-equilibrium green's function (NEGF) is used as the research method. By analyzing the calculations, we found this structure has an excellent spin filtering effect. Meanwhile, we also observed the spin-up current has a negative differential resistance effect (NDR) at a low negative bias. The spin filter and NDR are simultaneously observed in a carbon-based device, which has great significance in spintronic research.

  • Bandgap Engineering of Black Phosphorus-Based Nano structures

    In this work, first-principles calculations based on Density Functional Theory (DFT) were employed in order to investigate the electronic properties of Black Phosphorus and its 2D and 1D derivatives, named Phosphorene and Phosphorene Nanoribbons (PNRs) respectively. The electronic structures of the black phosphorus-based nanostructures were firstly examined. Our results demonstrate that all dimensions behave as semiconductors except for the zigzag nanoribbons which are shown to be metals. Furthermore, we extended our study to include different strategies to engineer the bandgap of the two-dimensional phosphorene and the one-dimensional phosphorene nanoribbons either by stacking a multiple number of the phosphorene layers, exercising a tensile or compressive strain or by edge-passivating the phosphorene nanoribbons with Hydrogen. Our study reveals that the bandgaps and the electronic properties of these black phosphorus-based nanostructures are very flexible and several approaches could be adopted in order to engineer them.

  • High Reflection from a One-Dimensional Array of Graphene Nanoribbons

    We show one-dimensional plasmonic systems such as graphene nanoribbons can be used to engineer extremely large bandwidth, high reflectivity resonances. Further, we prove that the underlying concept relies upon the general observation of the lack of Chu-Harrington limit in one-dimensional systems. © 2019 The Author(s).

  • Electro-Thermal Simulation of Graphene Nanoribbons Including Self-Heating Effects

    An effective method for the electro-thermal simulation of graphene nanoribbons (GNRs) is presented based on the Boltzmann-Poisson formalism coupled with heat conduction equation (HCE). Firstly, the Boltzmann transport equation (BTE) is solved under the relaxation time approximation (RTA). The power density is then used as the Joule-heating source in HCE to calculate the temperature profile along the GNR. After that, the temperature result is sent back to the BTE for updating the distribution function. This process is iterated until self-consistency is achieved. Using this method, the current-voltage (1-V) characteristic of GNRs is simulated. Self-heating of GNR is examined and is found to be non-negligible under high bias condition.

  • Effect of Edge passivation on the Electronic Properties of Zigzag Phosphorene Nanoribbons (ZPNRs) Antidots

    In this paper, we report the electronic properties of Zigzag Phosphorene Nanoribbons(ZPNRs) when passivated using different atoms. All electronic properties were calculated using the Density Functional Based Tight Binding(DFTB) Method which provide result similar to DFT methodbut saves computational time. Single layer PNRs structure was optimized and simulated with Hydrogen, Oxygen and without any passivation. The bandstructure, Density of States(DOS) both confirm the superiority of H passivation over others. The same calculation is repeated for the ZPNRs based antidot lattice. We observe that although ZPNRs reduce bandgap in antidot structure irrespective of the passivation, H passivated antidot lattice provide a bandgap in semiconducting range whereas other passivations return metallic behaviour.



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