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Periodicals related to Silicon Nitride

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Most published Xplore authors for Silicon Nitride

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Xplore Articles related to Silicon Nitride

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Optimization of silicon nitride antireflective nanostructures for silicon solar cells

2018 7th International Energy and Sustainability Conference (IESC), 2018

Nanostructured antireflective coatings are emerging as key components in today's highly efficient silicon solar cells. In this work, an antireflective structure composed of silicon nitride (SiNx) nanocone arrays on a SiNx thin layer is modelled and simulated. The structural parameters are optimized in order to suppress the surface reflectance and to enhance the short-circuit current density of crystalline silicon solar ...


Efficient silicon nitride grating coupler with a dielectric multilayer reflector

2017 22nd Microoptics Conference (MOC), 2017

A highly efficient grating coupler with a dielectric multilayer reflector for silicon nitride photonic integrated circuits was proposed. Design, fabrication and optical characterization were presented. The peak coupling efficiency and 3 dB bandwidth are -4.5 dB and 68.0 nm, respectively. The fabrication process is CMOS-compatible with only one etching step.


Group IV Compounds Modulators and Mid Index Waveguides for Enhanced CMOS Photonics

2018 IEEE Photonics Conference (IPC), 2018

We demonstrate CMOS compatible photonic components such as high speed Ge/SiGe electro-absorption modulators and a flexible BEOL SiN waveguide platform for applications such as temperature insensitive CWDM and all optical signal processing through enhanced non-linear characteristics.


Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform

2018 76th Device Research Conference (DRC), 2018

Metal-halide perovskites, low-cost solution processed semiconductors, have been successfully demonstrated in various optoelectronic devices, including optically pumped continuous wave lasers [1]. Straight forward deposition by spin coating [2] makes them an interesting choice for integrated micro/nano optoelectronics.


Corrections to “Characterization of Hybrid InP-TriPleX Photonic Integrated Tunable Lasers Based on Silicon Nitride (Si3N4/SiO2) Microring Resonators for Optical Coherent System” [Sep 18 Art no. 1400108]

IEEE Photonics Journal, 2018

Presents corrections to the paper, “Characterization of Hybrid InP-TriPleX photonic integrated tunable lasers based on silicon nitride (Si3N4/SiO2) microring resonators for optical coherent system,” (Lin, Y., et al), IEEE Photon. J., vol. 10, no. 3, Jun. 2018, Art. no. 1400108.


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Educational Resources on Silicon Nitride

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IEEE.tv Videos

IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
GaN and SiC, Fact vs. Friction: APEC 2013 KeyTalk with Dr. Umesh Mishra
Millimeter-Wave Bandpass Filter Using High-Q Conical Inductors and MOM Capacitors: RFIC Interactive Forum
Gallium Nitride (GaN) takes Center Stage: IR, Infineon
The Long Term Reliability of Gallium Nitride
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
Silicon THz: an Opportunity for Innovation
Silicon Labs' Thunderboard Sense (SLTB001A): Mouser Engineering Bench Talk
IEEE Patent Presentation
IMS MicroApps: Silicon Technology Solutions for Wireless Front End Modules
Silicon Photonics: An IPC Keynote with Michal Lipson
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
2011 IEEE Awards Edison Medal - Isamu Akasaki
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Moving from Si to SiC from the End User’s Perspective - Muhammad Nawaz, APEC 2018
Chief Scientist Barbara De Salvo on How Leti is a Pioneer to Innovation - 2016 Women in Engineering Conference

IEEE-USA E-Books

  • Optimization of silicon nitride antireflective nanostructures for silicon solar cells

    Nanostructured antireflective coatings are emerging as key components in today's highly efficient silicon solar cells. In this work, an antireflective structure composed of silicon nitride (SiNx) nanocone arrays on a SiNx thin layer is modelled and simulated. The structural parameters are optimized in order to suppress the surface reflectance and to enhance the short-circuit current density of crystalline silicon solar cells. With the optimized geometrical parameters, this antireflective structure is found to reduce the weighted reflectance down to 0.57% and to improve the short-circuit current density up to 41.94 mA/cm2 in the wavelength range 300-1100 nm and under normal incidence. The reflectance is also found to stay below 1% for angles of incidence lower than 50° and for the s and p light polarizations.

  • Efficient silicon nitride grating coupler with a dielectric multilayer reflector

    A highly efficient grating coupler with a dielectric multilayer reflector for silicon nitride photonic integrated circuits was proposed. Design, fabrication and optical characterization were presented. The peak coupling efficiency and 3 dB bandwidth are -4.5 dB and 68.0 nm, respectively. The fabrication process is CMOS-compatible with only one etching step.

  • Group IV Compounds Modulators and Mid Index Waveguides for Enhanced CMOS Photonics

    We demonstrate CMOS compatible photonic components such as high speed Ge/SiGe electro-absorption modulators and a flexible BEOL SiN waveguide platform for applications such as temperature insensitive CWDM and all optical signal processing through enhanced non-linear characteristics.

  • Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform

    Metal-halide perovskites, low-cost solution processed semiconductors, have been successfully demonstrated in various optoelectronic devices, including optically pumped continuous wave lasers [1]. Straight forward deposition by spin coating [2] makes them an interesting choice for integrated micro/nano optoelectronics.

  • Corrections to “Characterization of Hybrid InP-TriPleX Photonic Integrated Tunable Lasers Based on Silicon Nitride (Si3N4/SiO2) Microring Resonators for Optical Coherent System” [Sep 18 Art no. 1400108]

    Presents corrections to the paper, “Characterization of Hybrid InP-TriPleX photonic integrated tunable lasers based on silicon nitride (Si3N4/SiO2) microring resonators for optical coherent system,” (Lin, Y., et al), IEEE Photon. J., vol. 10, no. 3, Jun. 2018, Art. no. 1400108.

  • Efficient and low noise single-photon-level frequency conversion interfaces using Si3N4microrings

    Optical frequency conversion is an essential building block of nanophotonics, whose application ranges from tunable light sources for classical on-chip communications to miniaturized telecommunications-band interfaces for quantum information science. In the widely-used silicon photonics platform (including silicon nitride and silicon dioxide), a majority of reported frequency conversion experiments have used a degenerate four-wave mixing (FWM) process called parametric amplification (PA), as χ(2)is absent due to the crystalline centrosymmetry and χ(3)is the dominant nonlinearity. While PA-based frequency conversion works well for many classical applications, it offers a limited signal-to-noise ratio (SNR) when it comes down to the single-photon-level input light, largely because of the amplified vacuum fluctuation noise. Alternatively, there is another FWM process, termed four-wave-mixing Bragg scattering (FWMBS), that has been shown to be of low noise both theoretically and experimentally. The FWM-BS process is non-degenerate, and is typically operated in the normal dispersion region so it does not amplify vacuum fluctuations. Here we report our recent progress in developing an efficient and low-noise frequency conversion interface for single-photon-level inputs based on the FWM-BS process using silicon nanophotonics. For the demonstration purpose, the 1550nm band and 980nm band are chosen due to their relevance to low-loss transmission through optical fibers and quantum light generation by InAs/GaAs quantum dots, respectively. A compact silicon nitride microring resonator is employed (footprint <; 0.5×10-4cm2), for which a careful design has been carried out to minimize the frequency mismatch of the underlying FWM- BS process and to optimize the coupling to the relevant resonant modes. Thanks to the resonance enhancement, the required pump power has been reduced significantly to less than 60mW continuous-wave pumps in all the following frequency conversion configurations using the same device. We first show the intraband conversion in the 980nm band with two strong pumps in the 1550nm band. The spectral translation is over a few nanometers and the conversion efficiency is > 25%. Next, we demonstrate wideband frequency conversion from the 1550nm band to the 980nm band (upconversion) and the 980nm band to the 1550nm band (downconversion), with one strong pump in each band. For both the upconversion and downconversion cases, the spectral translation is around 600 nanometer and the conversion efficiency is > 60%. To characterize the noise property of the FWM-BS process, we measure the background noise for both the 980nm intraband conversion and the wideband 980nm to 1550nm downconversion using single-photon-level inputs, which is found to be on the fW and pW level, respectively. In addition, we have adopted simulation techniques based on the Lugiato-Lefever equation, which has been typically used for microresonator frequency combs, for the FWM-BS process, and quantitative agreements with measurements have been obtained.

  • Integrated silicon nitride time-bin entanglement circuits

    Time-bin entangled states are generated and analyzed in an integrated silicon nitride chip. Quantum state tomography indicates 91% fidelity to the ideal state, demonstrating its potential for applications in quantum communication networks.

  • Chirality and directional emission of a SiNx-based microring resonator with position controllable scatters

    Chiral device breaking time-reversal symmetry can control the propagation direction of the light which is great significant for the information processing on chip. Here we report a new chiral structure based on silicon nitride (SiNx) microring resonator embedded with a scatterer in the evanescent region the waveguide. The simulation results show that the asymmetry backscattering of the whispering-gallery modes (WGMs) can be induced by a single scatterer and thus directional transmission observed. In addition, the dimensions and relative position of the scatterer have been optimized to obtain the strongest chirality effect, resulting in an extinction ratio of up to 10 dB. Our results open pathways towards many chiral integrated nanophotonic devices.

  • A 300mm CMOS-Compatible PECVD Silicon Nitride Platform for Integrated Photonics with Low Loss and Low Process Induced Phase Variation

    Low loss PECVD silicon nitride waveguides at 905 nm (0.2 dB/cm) and 532 nm (1.36 dB/cm) wavelengths are reported. Efficacy of phase variation measurements for identifying process conditions for optical phased array fabrication is demonstrated.

  • Scalability and Yield in Elastomer Stamp Micro-Transfer-Printing

    Elastomer stamp micro-transfer-printing is a highly scalable method for the assembly of microscale components onto non-native substrates. One of the key value propositions of micro-transfer-printing is that the transfer stamp can be scaled to wafer-dimensions and can transfer tens to thousands of micro- devices in a single step, equating to multiple millions of units per hour. Here, we report on the results of systematically scaling the stamp from 12.8 mm × 12.8 mm to a full 150 mm stamp, capable of transferring all the required devices to a 150 mm receiving wafer in one operation. The 150 mm stamp is designed to transfer more than 80,000 chips in one print cycle. This study was carried out using silicon nitride test vehicles that were specially designed for this project. We will discuss how stamp scaling impacts transfer yield and the implications for ultra-high throughput assembly of micro-devices. In addition, we will explore the capability to transfer very small devices down to 3 μm × 3 μm.



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