IEEE Organizations related to Cryogenic Electronics

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No organizations are currently tagged "Cryogenic Electronics"



Conferences related to Cryogenic Electronics

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2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


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Periodicals related to Cryogenic Electronics

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No periodicals are currently tagged "Cryogenic Electronics"


Most published Xplore authors for Cryogenic Electronics

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Xplore Articles related to Cryogenic Electronics

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TBCCO-thin film microwave devices

IEE Colloquium on Superconducting Microwave Circuits, 1996

Thallium based HTS thin films have been deposited on a variety of substrates, including single sided films on LaAlO/sub 3/ and double sided films on MgO. Various microwave devices have been fabricated from such films including planar filters, high Q disk resonators and a tunable oscillator. This paper reports on experimental results for such devices and their integration with a ...


Design and realization of an optimal current sensitive CCC

IEEE Transactions on Instrumentation and Measurement, 1999

The sensitivity of an overlapped tube cryogenic current comparator (CCC), coupled to a SQUID by means of a flux transformer, is calculated and compared with measurements. Conditions for optimal coupling between the CCC and the SQUID are derived. Based on these, an optimal CCC for precision measurements of very small currents in the nanoampere range has been designed. The paper ...


Hot-carrier transport in thin-film SOI MOSFETs at room and cryogenic temperatures

Electronics Letters, 1995

The influence of the substrate bias on the hot-carrier effects in thin-film SOI MOSFETs is investigated. It is shown that the high-field properties strongly depend on the substrate bias, with a substantial decrease of the impact ionisation rate for volume inversion operation, which is very promising for the reduction of hot-carrier-induced degradation of double-gate SOI MOSFETs. Furthermore, the analysis of ...


InAs bipolar transistors: a path to high-performance cryogenic electronics

51st Annual Device Research Conference, 1993

None


Results from a detailed calculation of the sensitivity of a cryogenic current comparator

IEEE Transactions on Instrumentation and Measurement, 1999

A detailed calculation of the sensitivity of a cryogenic current comparator (CCC) has been completed. The model accounts for the current distributions on the closed external shield and the overlapped shield around the windings. Additional refinements to the model lead to excellent agreement (typically better than 5%) with sensitivity measurements for a wide range of CCC geometries. We demonstrate that ...


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Educational Resources on Cryogenic Electronics

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IEEE-USA E-Books

  • TBCCO-thin film microwave devices

    Thallium based HTS thin films have been deposited on a variety of substrates, including single sided films on LaAlO/sub 3/ and double sided films on MgO. Various microwave devices have been fabricated from such films including planar filters, high Q disk resonators and a tunable oscillator. This paper reports on experimental results for such devices and their integration with a cryocooler as well as presenting an overview of the current state of the TBCCO thin film program at Oxford.

  • Design and realization of an optimal current sensitive CCC

    The sensitivity of an overlapped tube cryogenic current comparator (CCC), coupled to a SQUID by means of a flux transformer, is calculated and compared with measurements. Conditions for optimal coupling between the CCC and the SQUID are derived. Based on these, an optimal CCC for precision measurements of very small currents in the nanoampere range has been designed. The paper describes the construction and testing of some parts of the system. An essential element is a home-made dc SQUID with low current noise and low inductance input coil equal to that of the CCC overlapped shield, which we use as sensing coil.

  • Hot-carrier transport in thin-film SOI MOSFETs at room and cryogenic temperatures

    The influence of the substrate bias on the hot-carrier effects in thin-film SOI MOSFETs is investigated. It is shown that the high-field properties strongly depend on the substrate bias, with a substantial decrease of the impact ionisation rate for volume inversion operation, which is very promising for the reduction of hot-carrier-induced degradation of double-gate SOI MOSFETs. Furthermore, the analysis of the electrical properties of these devices in a wide temperature range allows us to propose a satisfactory model for the hot-carrier behaviours, which highlights the role of the substrate bias for control of the high-field region and thus, of the nonstationary transport in thin Si films.<>

  • InAs bipolar transistors: a path to high-performance cryogenic electronics

    None

  • Results from a detailed calculation of the sensitivity of a cryogenic current comparator

    A detailed calculation of the sensitivity of a cryogenic current comparator (CCC) has been completed. The model accounts for the current distributions on the closed external shield and the overlapped shield around the windings. Additional refinements to the model lead to excellent agreement (typically better than 5%) with sensitivity measurements for a wide range of CCC geometries. We demonstrate that generally the best strategy for significantly improving the overall gain of a CCC is to increase the number of windings in the toroid at the expense of a reduction in the sensitivity.

  • InAs bipolar transistors: a path to high-performance cryogenic electronics

    The authors present the first demonstration of npn InAs bipolar transistors operating under room temperature and cryogenic conditions. The development of InAs HBTs (heterojunction bipolar transistors) has been hindered by the lack of a suitable wide bandgap emitter. This problem is circumvented by using the pseudo-HBT concept, which relies on the Burnstein shift to effectively widen the bandgap in the n-emitter and bandgap narrowing in the heavily doped p-type base to effectively shrink the base bandgap. For low temperature operation, the resulting bandgap difference should be more than sufficient for a wide-gap emitter as demonstrated by the current gains of more than 100 observed in GaAs pseudo-HBTs operating at 35 K.

  • Low temperature analysis of 0.25 /spl mu/m T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

    A low temperature dc and HF investigation of 0.25 /spl mu/m T-gate Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's is presented. Outstanding maximum oscillation frequencies f/sub max/ range from 100-120 GHz at 300 K up to 195 GHz at 50 K. These high-frequency characteristics are the first reported at low temperature on Si/SiGe n-MODFET's and are also the highest room temperature data reported so far; physical modeling is used to explain the main trends observed when cooling down the n-MODFET. Many experimental data are presented. The dependence on temperature and biases of the important small-signal equivalent circuit parameters is investigated to analyze the device high-frequency performances and the minimum noise figure of the intrinsic device is determined.

  • Stabilized Millimeter Oscillators Employing Planar And Quasi-optic Image Whispering Gallery Mode Disc Dielectric Resonators

    None

  • Cryogenic performance of a 200 GHz SiGe HBT technology

    The cryogenic performance of a 200 GHz SiGe HBT technology is presented for the first time. Measurements of the current-voltage, small-signal ac, and broadband noise characteristics of a 200 GHz SiGe HBT was made at 85K, 150K, 200K and 300K. At 85K, these SiGe HBTs maintain excellent dc ideality, with a peak current gain of 3800, a peak cut-off frequency of 250 GHz, and a minimum noise figure of approximately 0.30 dB at a frequency of 14 GHz, and in all cases represent improvements over their corresponding 300K values. These results suggest that aggressively-scaled SiGe HBT technology is well-suited for emerging cryogenic applications requiring extreme levels of transistor performance.

  • Low noise cryogenic electronics: preamplifier configurations with feedback on the bolometer

    We have developed preamplifier configurations used to readout resistive bolometers such as those based on neutron transmuted doped Germanium thermometers (so-called NTD Ge thermometers) or NbSi thin film thermometers. We introduce the impedance regulating preamplifier configuration. This configuration is compared to previously proposed readout configurations with feedback on the bolometer. It is shown that the impedance regulating preamplifier achieves extreme electrothermal feedback without using transition edge thermometer and SQUID readout. Thus the detector and readout electronics are straightforwardly calibrated and can handle much larger event rates. Looped configurations simplify the design and improve performance of detection such as bandwidth. Finally, we analyze the impedance regulating amplifier noise contributions, with JFETs as front-end devices, relative to other configurations.



Standards related to Cryogenic Electronics

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Jobs related to Cryogenic Electronics

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