Device

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A technical, physical component (hardware) with communication capabilities linking it to other IT systems. A device can be either attached to or embedded inside a physical entity or monitor a physical entity in its vicinity. (Wikipedia.org)






Conferences related to Device

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


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Periodicals related to Device

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Antennas and Wireless Propagation Letters, IEEE

IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


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Most published Xplore authors for Device

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Xplore Articles related to Device

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Simple simulation approach for the first trigger step of SEB (single event burn-out) based upon physical analysis for Si high voltage bipolar device

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016

Through the physical analysis, the first and minimum destruction point of the power semiconductor chip is precisely identified as around the main pn junction. It well agrees with the Impact Ionization (I/I) peak enhanced by an electric field crowding. A simple device simulation approach, which uses a visible light approximation (optical generation) instead of a high energy radiation ion, is ...


Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications

IEEE Electron Device Letters, 2010

In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant ...


Electro-Optical Characteristics of Liquid Crystal Device With Nanoscale Molybdenum Trioxide$(\hbox{MoO}_{3})$Thin Films

IEEE Electron Device Letters, 2012

The liquid crystal (LC) alignment of molybdenum trioxide (MoO3) thin layers through ion-beam (IB) irradiation leads to LC alignment characteristics that are superior to those obtained with rubbed polyimide (PI) layers. We found that LC alignment states on a thin MoO3layer are influenced by changes in IB irradiation energy. X-ray photoelectron spectroscopy analysis showed that the binding intensities of the ...


Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

IEEE Electron Device Letters, 2018

The self-rectifying resistive-switching (RS) device is one of the most promising solutions to overcome the sneaking current issue in a 3D vertical crossbar array. In this letter, we report a CMOS-compatible, forming-free, self-rectifying resistive random access memory device with high uniformity and low operation voltage (<;3V) for embedded memory application. Thanks to the low read voltage, this device shows robust ...


General Geometric Fluctuation Modeling for Device Variability Analysis

IEEE Transactions on Electron Devices, 2015

We propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct modeling of multiple variational devices, the proposed geometric variation (GV) model shows a better efficiency thanks to its IFM- based nature. Compared with the existing random geometric fluctuation (RGF) model where the noise sources ...


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Educational Resources on Device

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IEEE.tv Videos

IMS 2011 Microapps - Advanced Terahertz Device Characterization
LPIRC: On Device Vision, Google AI-Style
Mobile Internet Devices at Intel
Designing Efficient On-Device AI - Aakanksha Chowdhery - LPIRC 2019
MicroNano Robotics Enabled Technology for Nano Device Assembly and Drug Discovery
IMS 2011 Microapps - Improved Microwave Device Characterization and Qualification Using Affordable Microwave Microprobing Techniques for High-Yield Production of Microwave Components
Energous Corporation President Stephen Rizzone demonstrates wireless mobile device charging - 2016 Women in Engineering Conference
The IMS Core, Wireless Network Architecture and LTE
Q&A with Heather Benz: IEEE Brain Podcast, Episode 4
Honda U3-X Personal Mobility Device in NY
Agilent: Test up to 1500 amps and 10,000 volts!
CES 2008: Herman Miller's C2 Climate Control for the desktop
Modeling Device-to-Device Communications for Wireless Public Safety Networks - David Griffith - 5G Technologies for Tactical and First Responder Networks 2018
IMS 2012 Microapps - Reducing Active Device Temperature Rise and RF Heating Effects with High Thermal Conductivity Low Loss Circuit Laminates
Evaluating Over-The-Air Performance of MIMO Wireless Devices
Pt. 2: More Moore: Scaling of CMOS - An Chen - Industry Panel 2, IEEE Globecom, 2019
IMS 2011 Microapps - Volume Manufacturing Trends for Automotive Radar Devices
IMS 2012 Microapps - Panel Session: Device Characterization Methods and Advanced RF/ Microwave Design
What's New in Storage Devices - Jim Gathman from IBM
Overview of SDRJ - Yoshihiro Hayashi at INC 2019

IEEE-USA E-Books

  • Simple simulation approach for the first trigger step of SEB (single event burn-out) based upon physical analysis for Si high voltage bipolar device

    Through the physical analysis, the first and minimum destruction point of the power semiconductor chip is precisely identified as around the main pn junction. It well agrees with the Impact Ionization (I/I) peak enhanced by an electric field crowding. A simple device simulation approach, which uses a visible light approximation (optical generation) instead of a high energy radiation ion, is effective to trace the SEB phenomenon. Several fundamental settings were studied to simulate the experimental results.

  • Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications

    In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant low-frequency noise mechanism in both devices. The use of a high-mobility bilayer oxide TFT with scaled gate length is still valid for reducing low-frequency noise.

  • Electro-Optical Characteristics of Liquid Crystal Device With Nanoscale Molybdenum Trioxide$(\hbox{MoO}_{3})$Thin Films

    The liquid crystal (LC) alignment of molybdenum trioxide (MoO3) thin layers through ion-beam (IB) irradiation leads to LC alignment characteristics that are superior to those obtained with rubbed polyimide (PI) layers. We found that LC alignment states on a thin MoO3layer are influenced by changes in IB irradiation energy. X-ray photoelectron spectroscopy analysis showed that the binding intensities of the Mo peaks that significantly decreased at IB irradiation energies greater than 2400 eV can homogeneously align with the LC and MoO3molecules. An examination of the electro-optical characteristics revealed that MoO3gave rise to a fast LC response time when compared to the PI layer.

  • Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

    The self-rectifying resistive-switching (RS) device is one of the most promising solutions to overcome the sneaking current issue in a 3D vertical crossbar array. In this letter, we report a CMOS-compatible, forming-free, self-rectifying resistive random access memory device with high uniformity and low operation voltage (&lt;;3V) for embedded memory application. Thanks to the low read voltage, this device shows robust read disturbance (&gt;10<sup>9</sup>) characteristics. After introducing a 3-nm HfO<sub>2</sub> thin film between Pd and WO<sub>x</sub> layer, Schottky contact of Pd/HfO<sub>2</sub> was formed, which resulted in rectifying property. The HfO<sub>2</sub> layer also served as an oxygen reservoir for RS in WO<sub>x</sub> layer. This novel memory device with excellent performance is a promising candidate for future high density embedded memory application.

  • General Geometric Fluctuation Modeling for Device Variability Analysis

    We propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct modeling of multiple variational devices, the proposed geometric variation (GV) model shows a better efficiency thanks to its IFM- based nature. Compared with the existing random geometric fluctuation (RGF) model where the noise sources are limited to the interfaces, the present GV model provides better accuracy and wider application areas as it transforms the geometric variation into global mesh deformation and computes the noise sources induced by the geometric variation in the whole simulation domain. GV model also provides great insights into the device by providing the effective noise sources, equationwise contributions, and sensitivity maps that are useful for device characterization and optimization.

  • High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology

    A novel high voltage edge termination utilizing Surface-Charge-Control (SCC) technology has been proposed for a wide range temperature with humidity. Under electrically biased and high-humidity conditions, charges generated by the high electric field and external perturbations accumulate on the silicon surface, which eventually degrades the blocking capability. The proposed edge termination structure has an optimized semi-insulated layer on the silicon surface. Due to this optimized layer, the accumulated charges on the silicon surface are swept away, which contributes to the improvement of the reliability. HTRB and low-temperature with high-humidity tests were carried out on the fabricated 6.5kV IGBT devices utilizing the SCC technology. The results validate that the proposed SCC technology has improved the long-term stability and the robustness against high humidity conditions.

  • Failure analysis of the VDMOS device with Vsd and Rds (on) exceeded limit based on reliability physics

    Failure analysis is carried out in an irregular way because failure occurred in different situations with different phenomena. Experiences are usually needed to do failure analysis. When a new failure case occurs, it is difficult to make an effective scheme to implement the failure analysis without experiences. To solve this problem, an analysis method based on reliability physics is proposed in this article. In this paper, a power VDMOS device failed with both parameters VSDand RDS (on)degraded after 500 cycles of temperature cycle test. The failure analysis based on reliability physics is carried out to guide the implement of experiments, such as a c-mode scanning acoustic microscope test and a thermal resistance test. At last the root cause of the device failure is found.

  • Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

    Negative-SET behavior, induced by nano-filament overgrowth phenomenon, takes major responsibility to the reset failure phenomenon in conductive bridge random access memory (CBRAM). The unexpected negative-SET behavior in CBRAM devices can result in serious reliability issues and has been an obstacle on the way to mass production. In this letter, we have proposed a back-end-of- line (BEOL) compatible TiN barrier layer to improve the device reliability in CBRAM devices by eliminating the nano-filament overgrowth phenomenon and negative-SET behavior. Thus, a higher reset voltage can be applied to the TiN barrier layer devices to achieve more complete reset process and obtain better resistive switching performance. The results show that the Cu/HfO<sub>2</sub>/TiN/Ru device with one transistor structure has excellent comprehensive memory properties, including high reliability, fast switching speed, high resistance state uniformity, high endurance, long retention, and multi-level storage ability.

  • IEEE Draft Standard for Medical Device Communications -- Medical Device Data Language (MDDL) Virtual Medical Device, Specialized -- Cardiac Output

    This standard establishes a model for the implementation of the Cardiac Output Virtual Medical Device. It establishes a Design Model and specifies how this Model should be implemented. It also provides guidance concerning bandwidth requirements as well as how to specify conformance with this standard.

  • IEEE Draft Standard for Medical Device Communications - Medical Device Data Language (MDDL) Medical Device Specializations - Pulse Oximeter

    This standard establishes a model for the implementation of the Pulse Oximeter Virtual Medical Device. It establishes a Design Model and specifies how this Model should be implemented. It also provides guidance concerning bandwidth requirements as well as how to specify conformance with this standard.



Standards related to Device

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IEEE Application Guide for Low-Voltage AC Power Circuit Breakers Applied with Separately-Mounted Current-Limiting Fuses

This guide applies to low-voltage ac power circuit breakers of the 635 V maximum voltage class with separately-mounted current-limiting fuses for use on ac circuits with available short-circuit currents of 200 000 A (rms symmetrical) or less. Low-voltage ac fused power circuit breakers and combinations of fuses and molded-case circuit breakers are not covered by this guide. This guide sets ...


IEEE Standard for Local and metropolitan area networks - Secure Device Identity

This standard specifies unique per-device identifiers (DevID) and the management and cryptographic binding of a device to its identifiers, the relationship between an initially installed identity and subsequent locally significant identities, and interfaces and methods for use of DevIDs with existing and new provisioning and authentication protocols.