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Dash is an online tutorial to help you learn HTML, CSS, and JavaScript and create websites from scratch. (Wikipedia.org)






Conferences related to Dash

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2020 IEEE International Conference on Systems, Man, and Cybernetics (SMC)

The 2020 IEEE International Conference on Systems, Man, and Cybernetics (SMC 2020) will be held in Metro Toronto Convention Centre (MTCC), Toronto, Ontario, Canada. SMC 2020 is the flagship conference of the IEEE Systems, Man, and Cybernetics Society. It provides an international forum for researchers and practitioners to report most recent innovations and developments, summarize state-of-the-art, and exchange ideas and advances in all aspects of systems science and engineering, human machine systems, and cybernetics. Advances in these fields have increasing importance in the creation of intelligent environments involving technologies interacting with humans to provide an enriching experience and thereby improve quality of life. Papers related to the conference theme are solicited, including theories, methodologies, and emerging applications. Contributions to theory and practice, including but not limited to the following technical areas, are invited.


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


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Periodicals related to Dash

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Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


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Most published Xplore authors for Dash

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Xplore Articles related to Dash

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The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

7th International Symposium on High-capacity Optical Networks and Enabling Technologies, 2010

We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease ...


Quantum Dash Mode-Locked Lasers for Data Centre Applications

IEEE Journal of Selected Topics in Quantum Electronics, 2015

The authors demonstrate single-polarisation WDM transmission with capacities higher than 400 Gb/s and 1 Tb/s, and show the possibility of obtaining capacity in excess of 4 Tb/s for interconnect applications within and between data centres, based on a single laser source. Quantum Dash (Q-Dash) passively mode-locked lasers (PMLLs), with free spectral ranges of 82.8, 44.7, and 10.2 GHz, were used ...


Operation Mode Characterization of a Chirped in AS/LNP Quantum-Dash Laser

2017 9th IEEE-GCC Conference and Exhibition (GCCCE), 2017

In this paper, we analyze the lasing characteristics of a chirped InP based InAs quantum dash in a well multi stacked laser structure under different current operation modes. These modes are different short pulsed modes of different duty cycles (0.2, 0.5, 1, 2, 3, and 4%) and continuous wave mode. The investigation is carried out by obtaining the output light ...


Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm

2008 20th International Conference on Indium Phosphide and Related Materials, 2008

The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 mum by multiple stacked dash layers from two to five, with ground state lasing at room temperature. The threshold current density reaches a minimum value of 683 A/cm2from double quantum dash structure, resulting ...


Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-$\mu$m Quantum-Dash Lasers

IEEE Photonics Technology Letters, 2009

InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous- wave operation up to 100degC with a characteristic temperature of 88 K between 25degC and 85degC and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85degC. The linewidth enhancement factor above threshold is evaluated by means ...


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Educational Resources on Dash

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IEEE-USA E-Books

  • The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

    We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ~1-1.5 and ~0.6×10-15-1.0×10-15cm2, respectively.

  • Quantum Dash Mode-Locked Lasers for Data Centre Applications

    The authors demonstrate single-polarisation WDM transmission with capacities higher than 400 Gb/s and 1 Tb/s, and show the possibility of obtaining capacity in excess of 4 Tb/s for interconnect applications within and between data centres, based on a single laser source. Quantum Dash (Q-Dash) passively mode-locked lasers (PMLLs), with free spectral ranges of 82.8, 44.7, and 10.2 GHz, were used for the generation of a large number of carriers, enabling high data rate transmission. The terabit per second transmission using Q-Dash MLLs was demonstrated in this paper, and was enabled using intensity modulated and directly detected (IM/DD) single-side band orthogonal frequency-division multiplexed signals. The system performance was investigated for a propagation distance of 3 and 50 km of standard single mode fibre indicating the potential for interconnect applications within and between data centres. The relative intensity noise (RIN) of all Q-Dash devices was characterised, and the effect of RIN on the system performance was investigated by examining the error- vector magnitude of OFDM subcarriers over the desired frequency range.

  • Operation Mode Characterization of a Chirped in AS/LNP Quantum-Dash Laser

    In this paper, we analyze the lasing characteristics of a chirped InP based InAs quantum dash in a well multi stacked laser structure under different current operation modes. These modes are different short pulsed modes of different duty cycles (0.2, 0.5, 1, 2, 3, and 4%) and continuous wave mode. The investigation is carried out by obtaining the output light power against injection current principle characteristics and then shedding light over the involved physics of carrier transitions and distribution within the active medium. Thereafter, the corresponding emission spectra are obtained while the effects of operation under these modes are compared. The results show that the junction temperature of the laser diode is sensitive to the operation mode due to the excess influx of carriers when the duration of pumping the current into the laser diode is increased, thereby affecting the distribution of carriers across the inhomogeneous quantum dash active region. This change in the non- uniform distribution of carriers, together with junction temperature, resulted in a narrow and red-shifted lasing emission in continuous wave mode compared to pulsed mode. These results will help in achieving high wall plug efficiency devices by proper optimization of quantum dash active region.

  • Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm

    The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 mum by multiple stacked dash layers from two to five, with ground state lasing at room temperature. The threshold current density reaches a minimum value of 683 A/cm2from double quantum dash structure, resulting from the trade-off between the low number of carrier requirement in the InAs active region and the reduction of carrier concentration in the optical waveguide.

  • Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-$\mu$m Quantum-Dash Lasers

    InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous- wave operation up to 100degC with a characteristic temperature of 88 K between 25degC and 85degC and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85degC. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.

  • The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

    We demonstrate the effect of nonequilibrium carrier distribution in a self- assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

  • 10 m Free space 128Gbit/s transmission via self-injection locked quantum-dash laser

    Self-injection Locking is employed on L-band InAs/InP quantum-dash laser to lock a single Fabry-Perot mode with ~9dBm power and >30dB SMSR. Successful 128 Gbit/s DP-QPSK data transmission is demonstrated via this ~1607nm locked mode over a 10m indoor FSO channel exhibiting ~-17.5dBm receiver-sensitivity.

  • 64 Gb/s quantum-dash laser based indoor free space optical communication

    We demonstrate a single channel free space optical dual polarization - quadrature phase shift keying (DP-QPSK) transmission using an injection-locked InAs/InP quantum dash (Qdash) laser by employing external modulation. A receiver sensitivity of -19 dBm at ~1621 nm is observed over a 4 m indoor channel at 64 Gb/s transmission rate. This stems the potential of Qdash lasers as a source in optical wireless communication, which is being considered as an alternative optical access technology for future high speed communication networks.

  • Optical wireless communication at 100 Gb/s using L-band Quantum-dash laser

    An indoor 100 Gb/s wireless communication is demonstrated using external coherent injection-locking of InAs/InP Quantum-dash (QDash) laser. Receiver power sensitivities of -18.4 dBm and -17.4 dBm at ~1621.3 nm are observed after propagating along a 2 m and 4 m indoor free-space channels, respectively, while adopting dual polarization quadrature phase shift keying (DP-QPSK) modulation scheme. Moreover, characterization of this far L-band QDash laser showed an injection locked Fabry-Perot mode tunability of ~19 nm with > 35 dB side-mode-suppression-ratio. To the authors' knowledge, this is the first demonstration of showcasing QDash lasers as a viable candidate in optical wireless communication, an attractive alternate optical access technology for next generation high capacity networks.

  • Multi-stack Chirped InAs/InP Quantum-dash Structure as a Tunable Laser

    Two-sectioned quantum dash laser is demonstrated as a monolithic, continuously electrically tunable source. Altering negative (positive) bias voltage on the absorber section showed a 4.2-nm blue-shift (4.5-nm red-shift) with a total broadband tunability of 8.7-nm.



Standards related to Dash

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Standard for Information Technology - Telecommunications and information exchange between systems - Local and metropolitan area networks - Specific requirements - Part 11: Wireless LAN Medium Access Control (MAC) and Physical Layer (PHY) specifications Amendment: Mesh Networking

This amendment describes an IEEE 802.11 Mesh network with an IEEE 802.11 Wireless Distribution System (WDS) using the IEEE 802.11 MAC/PHY layers that supports both broadcast/multicast and unicast delivery over self-configuring multi-hop topologies.