Titanium

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Titanium is a chemical element with the symbol Ti and atomic number 22. (Wikipedia.org)






Conferences related to Titanium

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


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Periodicals related to Titanium

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Titanium

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Xplore Articles related to Titanium

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The use of NbTiTa as a high field superconducting alloy

IEEE Transactions on Magnetics, 1981

NbTi-based alloys containing 8% and 25% tantalum have been studied for use at fields around 12 tesla and at temperatures between 2 K and 3 K. These materials have significantly higher current densities at reduced temperatures than other NbTi-based alloys. Using the results of these studies, a 10,000 A, nominal 12 tesla conductor has been designed and is presently being ...


Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVD

ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, 1992

The preparation and compositional control of Pb(Zr,Ti)O/sub 3/ films obtained using two kinds of reactive sputtering processes and MOCVD (metal-organic chemical vapor deposition) were investigated. When a metal composite target was used in reactive sputtering, the film composition Zr/(Zr+Ti) could be controlled from 0.25 to 0.81 by changing the total area of Ti in the target. When an alloy target ...


Critical current density and n-value of NbTi wires at low field

IEEE Transactions on Applied Superconductivity, 1995

The manufacturing process of NbTi wires for lower field applications is optimized concerning both the number of heat treatments and the final true strain, the strain of a wire from the wire diameter at the last heat treatment to the final diameter. The sample wires were made from Nb 54wt%Ti alloy and were manufactured to vary the number of heat ...


Microstructure control in high Ti NbTi alloys

IEEE Transactions on Magnetics, 1989

The microstructures of five high-Ti NbTi alloys (Nb49-62-wt.%Ti) and a ternary Nb-54-wt.%Ti, 4-wt.%Zr alloy have been observed following heat treatments of 80 h at 420 degrees C at prestrains of between 8.3 and 12.6. It was found that increasing prestrain suppressed the formation of deleterious Widmanstatten alpha -Ti and omega phases and that the higher the Ti content, the higher ...


Review of several solid-state devices and their applications

1958 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1958

Presents an abstract of the conference paper.


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Educational Resources on Titanium

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IEEE-USA E-Books

  • The use of NbTiTa as a high field superconducting alloy

    NbTi-based alloys containing 8% and 25% tantalum have been studied for use at fields around 12 tesla and at temperatures between 2 K and 3 K. These materials have significantly higher current densities at reduced temperatures than other NbTi-based alloys. Using the results of these studies, a 10,000 A, nominal 12 tesla conductor has been designed and is presently being fabricated for use in a test coil for the Lawrence Livermore Laboratory HFTF. The alloy selected for that conductor is Nb-43% Ti-25% Ta.

  • Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVD

    The preparation and compositional control of Pb(Zr,Ti)O/sub 3/ films obtained using two kinds of reactive sputtering processes and MOCVD (metal-organic chemical vapor deposition) were investigated. When a metal composite target was used in reactive sputtering, the film composition Zr/(Zr+Ti) could be controlled from 0.25 to 0.81 by changing the total area of Ti in the target. When an alloy target was used in reactive sputtering, there was no change in the Zr/(Zr+Ti) ratio of the films up to 196 h of target usage, and the reproducibility of the film compositional control was very good. Using the MOCVD method, the composition of the films and crystalline structures could be easily controlled by changing the amounts of gases supplied.<<ETX>>

  • Critical current density and n-value of NbTi wires at low field

    The manufacturing process of NbTi wires for lower field applications is optimized concerning both the number of heat treatments and the final true strain, the strain of a wire from the wire diameter at the last heat treatment to the final diameter. The sample wires were made from Nb 54wt%Ti alloy and were manufactured to vary the number of heat treatments (0, 1, 2, and 3) and the final true strain (0 to 3). One of these samples, which had one heat treatment and drew with the final true strain of 0.33, achieved J/sub c/ of 3360 A/mm/sup 2/ and n-value of 111 at 3 T. This J/sub c/ is as good as a J/sub c/ of the wires made from conventional materials and this n-value is 3 times as large as the n-value of wires mentioned above. Furthermore, the n-value at 3 T and the minimum value of the cross-sectional area of each filament show a correlation coefficient of 0.73.<<ETX>>

  • Microstructure control in high Ti NbTi alloys

    The microstructures of five high-Ti NbTi alloys (Nb49-62-wt.%Ti) and a ternary Nb-54-wt.%Ti, 4-wt.%Zr alloy have been observed following heat treatments of 80 h at 420 degrees C at prestrains of between 8.3 and 12.6. It was found that increasing prestrain suppressed the formation of deleterious Widmanstatten alpha -Ti and omega phases and that the higher the Ti content, the higher the prestrain required for elimination of these forms of precipitation. The Zr addition increased the precipitation rate and reduced the precipitate size without promoting the formation of Widmanstatten alpha -Ti or omega .<<ETX>>

  • Review of several solid-state devices and their applications

    Presents an abstract of the conference paper.

  • MOS devices

    None

  • A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD

    A new interlayer dielectric film planarization technology for sub-half-micron multilevel interconnections has been developed. This technology utilizes a new selective TEOS-Ozone APCVD SiO/sub 2/ film formation technique which can be realized by differences in surface adsorption properties and flow characteristics of siloxane oligomers. The deposition rate can be reduced by putting Ti or its alloy metal films such as TiN and TiW on top of Al wirings. These metal films can reduce the oligomer adsorption and assist the oligomer flow into the spacings between Al wirings. Furthermore, the selectivity is enhanced by a CF/sub 4/ gas plasma pre-treatment, even on top of the W films. The TEOS-Ozone APCVD SiO/sub 2/ films deposited on the Ti/Al, TiN/Al, TiW/Al or W/Al wirings with the CF/sub 4/ pre-treatment were more than 40% thinner than those on PECVD SiO/sub 2/ under-layers. Higher capability for both local and global planarization of interlayer dielectrics was confirmed in a multilevel metallization scheme in the double-level Al interconnection technology with the 0.6 mu m design rule and in a prototype 64M DRAM fabrications.<<ETX>>

  • A new ultra-low impedance transmission line

    None

  • Titanium CO<inf>2</inf>-laser welding

    Results of CO2-laser butt and scarf welding of titanium alloy VT20 plates, 2 mm thick, with use of nano-powdered inoculators and without inoculating agents are presented. Satisfactory mechanical properties of weld joint without powders as well as with use of powdered inoculators are obtained. However, introduction of nano-powders of refractory compounds TiN, Y2O3 and their compositions allowed us to improve substantially the weld seam characteristics.

  • Development of Fine Filament NbTi Superconducting Strands for ITER

    The NbTi superconducting wires are used for the Poloidal Field (PF) coil of International Thermonuclear Experimental Reactor (ITER). Western Superconducting Technologies Co., Ltd. (WST) has produced conventional NbTi superconducting strand by single stacking for ITER. The final strands has been heat-treated with different duration. The properties of the NbTi strands meet the requirements to ITER PF strand specification. The diameter of the strand is 0.73 mm and filament diameter is 7.8 . The multifilament composite strand is made up of Nb-Ti filaments embedded in a high purity Cu matrix. This paper presents the results of comparative investigations on critical currents(Ic), critical current density(Jc), AC losses of the strands.



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