Conferences related to Sputter etching

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE/ASME International Conference on Advanced Intelligent Mechatronics (AIM)

The scope of the 2020 IEEE/ASME AIM includes the following topics: Actuators, Automotive Systems, Bioengineering, Data Storage Systems, Electronic Packaging, Fault Diagnosis, Human-Machine Interfaces, Industry Applications, Information Technology, Intelligent Systems, Machine Vision, Manufacturing, Micro-Electro-Mechanical Systems, Micro/Nano Technology, Modeling and Design, System Identification and Adaptive Control, Motion Control, Vibration and Noise Control, Neural and Fuzzy Control, Opto-Electronic Systems, Optomechatronics, Prototyping, Real-Time and Hardware-in-the-Loop Simulation, Robotics, Sensors, System Integration, Transportation Systems, Smart Materials and Structures, Energy Harvesting and other frontier fields.


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Periodicals related to Sputter etching

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Sputter etching

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Xplore Articles related to Sputter etching

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Technology '90: solid state (semiconductor storage)

IEEE Spectrum, 1990

Significant developments during 1989 are reviewed. Among them are: chips that passed the one-million transistor mark; logic and memory on one chip; advances in dynamic RAMs; BiCMOS static RAMs with increased speed and density; digital and analog functions on one chip; and gains due to packaging.<<ETX>>


Improving metal step coverage with Ar sputtering

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference, 1991

Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow. The sputtering improves the metal step coverage by rounding off the sharp corners on contact side- walls without contact CD loss nor degrading device performance. This approach is extremely useful for shallow junction ...


Distribution functions of positive ions and electrons in a plasma near a surface

IEEE Transactions on Plasma Science, 2000

In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential ...


A New MoSi2/Thin-Poly Si Gate Process

1983 Symposium on VLSI Technology. Digest of Technical Papers, 1983

None


Sub-Terabyte Optical Disc Realized by Three-Dimensional Pit Selection

2006 Optical Data Storage Topical Meeting, 2006

Three-dimensional pit selection (3DPS) is proposed for optical discs with the capacity of hundreds of gigabytes, where the super-resolution and multi-layer techniques are combined. In this method, a high transmittance of each layer is obtained by discrete opaque data pits made of a super-resolution material. The dual-layer disc was fabricated using a phase-change material as a pit material. The experimental ...


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Educational Resources on Sputter etching

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IEEE-USA E-Books

  • Technology '90: solid state (semiconductor storage)

    Significant developments during 1989 are reviewed. Among them are: chips that passed the one-million transistor mark; logic and memory on one chip; advances in dynamic RAMs; BiCMOS static RAMs with increased speed and density; digital and analog functions on one chip; and gains due to packaging.<<ETX>>

  • Improving metal step coverage with Ar sputtering

    Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow. The sputtering improves the metal step coverage by rounding off the sharp corners on contact side- walls without contact CD loss nor degrading device performance. This approach is extremely useful for shallow junction formation and titanium or tungsten silicide processes which can not tolerate high temperature reflow. The depth limitation for 0.8 mu m contacts on metal step coverage improvement is found to be around 1.0 um.<<ETX>>

  • Distribution functions of positive ions and electrons in a plasma near a surface

    In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential with position, the model and analysis from Emmert et al. (1980), are used. Distribution functions of the ions and electrons in a collisionless presheath and sheath on a wall partially reflecting ions and electrons, therefore, can be exactly obtained. The reflections of the ions and electrons by a wall play important roles in studying heat transfer from a plasma sheath to a workpiece surface, and sputter etching and deposition, ion implantation, and ion scattering spectroscopy. Irrespective of ion and electron reflectivities, velocities of the ions in the presheath and sheath are of highly non-Maxwell-Boltzmann distributions. The electrons in the presheath are close to Maxwell-Boltzmann distributions, whereas those in the sheath are non-Maxwell-Boltzmann distributions. Even though the wall partially reflects ions and electrons, the Bohm's criterion is marginally satisfied at the sheath edge. The computed distribution functions for a completely absorbing surface agree with theoretical results provided in the literature. Good comparison of the resulted transport variables with available analytical work is presented in the companion paper.

  • A New MoSi2/Thin-Poly Si Gate Process

    None

  • Sub-Terabyte Optical Disc Realized by Three-Dimensional Pit Selection

    Three-dimensional pit selection (3DPS) is proposed for optical discs with the capacity of hundreds of gigabytes, where the super-resolution and multi-layer techniques are combined. In this method, a high transmittance of each layer is obtained by discrete opaque data pits made of a super-resolution material. The dual-layer disc was fabricated using a phase-change material as a pit material. The experimental data show that the super-resolution effect is obtained for both layers. The additional advantages and the future expandability are discussed

  • Photonic bandgap crystals at optical wavelengths

    None

  • A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond

    Recently, 1 Gb DRAM based on the 0.18 /spl mu/m technology node (generation) and 0.15 /spl mu/m technology node for 4 Gb DRAM have been successfully demonstrated. These two technology generations are based on MIS capacitors using Ta/sub 2/O/sub 5/ dielectric. The extension of Ta/sub 2/O/sub 5/ MIS capacitors below 0.15 /spl mu/m technology is considered to be difficult due to insufficient cell capacitance. It is widely accepted that the MIM capacitor using high dielectric constant material is inevitable for 0.15 /spl mu/m technology and beyond. Although many studies to use high dielectric material have been reported, those studies are not adequate for 0.15 /spl mu/m technology and beyond because most of the studies are either based on a simple capacitor module process or based on large feature size design rules. In this paper, for the first time, a DRAM technology using BaSrTiO/sub 3/ (BST) MIM capacitors is developed with 0.15 /spl mu/m technology.

  • Head and media requirements for high density recording

    The extension of magnetic recording to very high areal density requires that all the critical parameters of the system be reduced to extremely small values. The recording head parameters have to be scaled down, as well as the media magnetic parameters and the media thickness. Furthermore, pulse-slimming equalization techniques are effective in increasing the recording density by reducing intersymbol interface and eliminating negative sidelobes. The author discusses the limitations of conventional ferrite heads, and the advantages of thin-film inductive heads deposited by sputtering and/or electrodeposition onto a very hard ceramic wafer the structure of the head elements being defined by photolithography and dry and wet etch steps, and thin-film magnetoresistive read heads. The latter are particularly advantageous on inner tracks of small-diameter disk drives where linear velocity is relatively slow. Integrating a magnetoresistive read head with an inductive write head not only improves the readback sensitivity but also solves track interference problems during reading, since the width of the read element can be made narrower than the width of the write head. Critical requirements for longitudinal-recording media in general and thin-film disks in particular are also considered.<<ETX>>

  • Combined thin film magnetoresistive read, inductive write heads

    Using photolithographic and thin-film deposition techniques various types of single- and multi-turn inductive heads have been fabricated, with or without a magnetoresistive (MR) element in the gap. The MR element has a Barberpole configuration, which makes biasing by an external field superfluous. Reading has also been done inductively. Read and write experiments have been performed on tape and disc.

  • Ion Beam Etching of Reflective Array Filters

    None



Standards related to Sputter etching

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