Conferences related to Semiconductor impurities

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

Nanotechnology


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.



Periodicals related to Semiconductor impurities

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.



Most published Xplore authors for Semiconductor impurities

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Xplore Articles related to Semiconductor impurities

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A new super high speed ECL compatible I2L technology

1979 International Electron Devices Meeting, 1979

A new technology for realizing high performance I2L and high speed ECL circuits on a same chip is described. The key to such a technology is graft base structure having respectively optimized impurity profiles for I2L gates and linear transistors. All of base regions (I2L; P+, P--, a linear transistor; P++, P-) are formed in different doping steps, followed by ...


Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate

IEEE Journal of Solid-State Circuits, 1982

The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow ...


Faraday rotation in Fe-based semimagnetic semiconductors

IEEE Transactions on Magnetics, 1992

The dependence of Faraday rotation (FR) of the light polarization phase on the radiation wavelength, the temperature, and the magnetic field for Fe-doped crystals of CdTe and CdSe is investigated. The Faraday effect enhancement due to s,p-d exchange interaction is found for Fe-doped SMS (semimagnetic semiconductors). The variation of s,p-d exchange interaction constants estimated for CdTe:Fe samples corresponds to the ...


Defects and processes in nonmetallic solids

IEEE Journal of Quantum Electronics, 1986

None


Polymer diffusants in III-V semiconductor compounds technology

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996

A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound ...



Educational Resources on Semiconductor impurities

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IEEE-USA E-Books

  • A new super high speed ECL compatible I2L technology

    A new technology for realizing high performance I2L and high speed ECL circuits on a same chip is described. The key to such a technology is graft base structure having respectively optimized impurity profiles for I2L gates and linear transistors. All of base regions (I2L; P+, P--, a linear transistor; P++, P-) are formed in different doping steps, followed by only one n+diffusion for I2L collector and the linear transistor's emitter. I2L P-- intrinsic base region formed by high energy ion implantation has a smaller Gummel number and a deeper junction depth than in the linear transistor. I2L P+extrinsic base region is deeper in junction depth than linear P++base region. A high speed I2L gate with upward current gain of 30 and 7 ns minimum delay could be compatible with a linear transistor having downward current gain of 80, BVCEOof 18 V and 4 GHz maximum cut off frequency. Futhermore, an ECL divider has successfully operated at frequencies up to 1.4 GHz.

  • Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate

    The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow the gate oxide. The, mobility of carrier in the channel is about 100 cm/sup 2//V /spl dot/s for p-channel MOSFET's and 300 cm/sup 2//V /spl dot/s for n-channel devices. This structure has inherent advantages such as crystallographicafly single crystalline.

  • Faraday rotation in Fe-based semimagnetic semiconductors

    The dependence of Faraday rotation (FR) of the light polarization phase on the radiation wavelength, the temperature, and the magnetic field for Fe-doped crystals of CdTe and CdSe is investigated. The Faraday effect enhancement due to s,p-d exchange interaction is found for Fe-doped SMS (semimagnetic semiconductors). The variation of s,p-d exchange interaction constants estimated for CdTe:Fe samples corresponds to the values known for Mn- containing SMS. Along with a steep drop of the oscillator strength, exciton transition as a consequence of Fe impurity introduction causes a substantial decrease of the Faraday effect amplifying degree in such materials. This phenomenon and the insufficient solubility of Fe-atoms in CdTe and CdSe lattices make the realization of applied aspects of SMS difficult.<<ETX>>

  • Defects and processes in nonmetallic solids

    None

  • Polymer diffusants in III-V semiconductor compounds technology

    A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO/sub 2/ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al/sub x/Ga/sub 1-x/As gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions.

  • Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films

    Low temperature photoluminescence spectroscopy is used extensively to study the distribution of defects, concerning the type and impurity in a semiconductor film. Typical photoluminescence spectra are observed in a near band edge region. The undoped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers. When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/III ratio. Below the V/III ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electro-chemical Capacitance Voltage (ECV) profiler.

  • The Influence of Impurity Scattering in Highly Doped SOI-MOSFETs

    The relationship between the most commonly used empirical and physical mobility models is investigated. The parameters of the empirical model are given as a function of those of the physical model. Based on these relations, it will be shown that the three empirical mobility parameters μ0, θ1and θ2are influenced by impurity scattering which increases with the doping concentration. This mechanism can be dominant in the linear mobility reduction factor θ1which may become negative. Experimental results of highly doped SOI- MOSFETs demonstrate that impurity scattering cannot be neglected any longer at ambient and higher temperatures.

  • Terahertz Bloch oscillations in semiconductor superlattices

    Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.

  • Analysis of solid microparticle influence on spacecraft solar arrays

    As it is known, solar array degradation in space is a multi-component function of environment depending mainly on deterioration of the solar array parameters under the corpuscular radiation effect, thermal cycling, charging, etc. Insufficiently studied factors bringing about degradation include effects of micrometeorites, comet and artificial-origin particles. It is assumed to think that the cover glasses of solar cells (SC) erode and fracture under impacts of meteorite bodies. In this case, power drop of a LEO solar array does not exceed 0.2-0.25% per 1 year. However, under certain circumstances, solid particle influence may result in the solar cells shunting and substantial degradation of their power. Shunting occurs under particular structural changes in the semiconductor structure and may be observed at an impact of rather large (over 50-100 /spl mu/m) and high-velocity (over 5-7 km/s) particles.

  • Variable-frequency automatic capacitance/conductance system for impurity profile and deep level determination

    Development of new semiconductor technologies frequently requires impurity density analysis on material with high leakage currents or deep level contamination. Previously described impurity profilers provide no diagnostics for such cases. We have constructed a new variable-frequency capacitance/conductance analysis system applicable to impurity profile. Schottky barrier height, MOS interface state and deep level analysis. The system, which consists almost entirely of commercial "building blocks", uses phase-sensitive detection to provide better than 40dB isolation between capacitance and conductance signals. For impurity profile measurements a two- frequency intermodulation technique avoids the stringent filtering requirements inherent in the Copeland plotter. In this mode the system can measure either capacitance, C and dC/dV or conductance, G and dG/dV over two decades in frequency. A small-scale analog computer integral with the unit allows presentation of the data as impurity profiles. A simple change of circuit parameters permits measurement of C or G with amplitude response flat within 1% over four decades of frequency. The computer may then be used to present the results in formats appropriate to Schottky barrier height or deep level determinations.



Standards related to Semiconductor impurities

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No standards are currently tagged "Semiconductor impurities"