Conferences related to Semiconductor growth

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

The Topical Meetings of the IEEE Photonics Society are the premier conference series for exciting, new areas in photonic science, technology, and applications; creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.



Periodicals related to Semiconductor growth

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Education, IEEE Transactions on

Educational methods, technology, and programs; history of technology; impact of evolving research on education.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Semiconductor growth

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No authors for "Semiconductor growth"


Xplore Articles related to Semiconductor growth

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IEE Colloquium on 'GaAs on Si' (Digest No.47)

IEE Colloquium on GaAs on Si, 1988

None


IEE Colloquium on 'III-V Compound Semiconductor Materials Growth' (Digest No.062)

IEE Colloquium on III-V Compound Semiconductor Materials Growth, 1992

None


High-efficiency hot-electron transport in GaInAs/InP hot electron transistor grown by OMVPE

Electronics Letters, 1989

Improved characteristics of the GaInAs/InP hot electron transistor (HET) fabricated by organo-metallic vapour phase epitaxy (OMVPE) are reported. The common-emitter current gain was 8 for the base thickness of 40 nm at 77 K. This result shows a promising potential for the heterostructure material system of GaInAs/InP for high-speed ballistic electron devices.<<ETX>>


10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth

Electronics Letters, 1994

Selective MOVPE growth is used to develop multiwavelength MQW-DBR lasers. Selectively grown waveguide layer thicknesses in the DBR region are varied by controlling the mask stripe width, resulting in wavelength control in MQW-DBR laser arrays fabricated with a constant period grating. A wavelength span of over 20 nm at a 2.5 nm constant wavelength step is demonstrated for 10 consecutive ...


Spot-size converted 1.3 mu m laser with butt-jointed selectively grown vertically tapered waveguide

Electronics Letters, 1995

A 1.3 mu m laser has been developed with a butt-jointed selectively grown spot-sire converter (SSC). The SSC vertically tapered waveguide and strained multiquantum well (MQW) active region are independently optimised. The laser was buried with semi-insulating InP to reduce optical loss in the SSC. A threshold current of 7 mA and an output power of >20 mW were obtained. ...



Educational Resources on Semiconductor growth

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IEEE-USA E-Books

  • IEE Colloquium on 'GaAs on Si' (Digest No.47)

    None

  • IEE Colloquium on 'III-V Compound Semiconductor Materials Growth' (Digest No.062)

    None

  • High-efficiency hot-electron transport in GaInAs/InP hot electron transistor grown by OMVPE

    Improved characteristics of the GaInAs/InP hot electron transistor (HET) fabricated by organo-metallic vapour phase epitaxy (OMVPE) are reported. The common-emitter current gain was 8 for the base thickness of 40 nm at 77 K. This result shows a promising potential for the heterostructure material system of GaInAs/InP for high-speed ballistic electron devices.<<ETX>>

  • 10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth

    Selective MOVPE growth is used to develop multiwavelength MQW-DBR lasers. Selectively grown waveguide layer thicknesses in the DBR region are varied by controlling the mask stripe width, resulting in wavelength control in MQW-DBR laser arrays fabricated with a constant period grating. A wavelength span of over 20 nm at a 2.5 nm constant wavelength step is demonstrated for 10 consecutive lasers.<<ETX>>

  • Spot-size converted 1.3 mu m laser with butt-jointed selectively grown vertically tapered waveguide

    A 1.3 mu m laser has been developed with a butt-jointed selectively grown spot-sire converter (SSC). The SSC vertically tapered waveguide and strained multiquantum well (MQW) active region are independently optimised. The laser was buried with semi-insulating InP to reduce optical loss in the SSC. A threshold current of 7 mA and an output power of >20 mW were obtained. Minimum coupling loss to a flat-end fibre of 1.06 dB was achieved. Long-term stability was also confirmed.<<ETX>>

  • AC characterization and modelling of the Ge/sub x/Si/sub 1-x//Si BICFET

    We present the first RF measurements of the Ge/sub x/Si/sub 1-x//Si Bipolar Inversion Channel Field Effect Transistor demonstrating the potential of the device for high-speed applications. Molecular Beam Epitaxially-grown Ge/sub x/Si/sub 1-x//Si devices fabricated with 4 micron emitter widths demonstrated de-embedded f/sub t/'s of 28 GHz. The lateral delay due to the charging of the inversion base presently limits the high-speed performance as does the conventional collector-base capacitance of the contact junctions. DC current gains above 3000 have been achieved at room temperature; the gain improves to 3500 at 10 K.<<ETX>>

  • Electrical passivation in hydrogen plasma exposed GaN

    Lightly p-doped (3*10/sup 17/ cm/sup -3/) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250 degrees C. Subsequent annealing to 350 degrees C produces further dopant passivation, while higher temperatures (450 degrees C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides.<<ETX>>

  • High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE

    Results are presented which show for the first time the achievement of predicted median lifetimes of 3*10/sup 5/ hours at 80 degrees C, and 10/sup 7/ hours at 25 degrees C by buried heterostructure (BH) lasers grown entirely by atmospheric MOVPE.<<ETX>>

  • Low temperature growth of GaAs quantum well lasers by modulated beam epitaxy

    GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/GaAs flux is held constant while the As flux is periodically shut off to produce a metal- rich surface. Devices grown at a substrate temperature of 500 degrees C exhibit threshold current densities below 1 kA/cm/sup 2/. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, this technique is more practical than migration enhanced epitaxy for low temperature laser growth.<<ETX>>

  • Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 mu m wavelength

    A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the compositional uniformity. A reflectivity of over 99% was obtained at 1.6 mu m from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers.<<ETX>>



Standards related to Semiconductor growth

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No standards are currently tagged "Semiconductor growth"