1,424 resources related to Oxygen
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Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.
The IEEE Sensors Conference is a forum for presentation, discussion, andexchange of state -of-the art information including the latest research and development in sensors andtheir related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
Bioinformatics, Computational Biology, Biomedical Engineering
This conference covers a wide range of fields from measurement and control to system analysis and design, from theory to application and from software to hardware.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.
This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.
Proceedings of the IRE, 1961
IEEE Conference Record - Abstracts. 1992 IEEE International Conference on Plasma, 1993
2006 IEEE International Magnetics Conference (INTERMAG), 2006
In this paper, the potential for new device materials and insight into the effects of some of the different iron oxide forms on exchange bias with NiFe (Permalloy) was discussed. The iron-oxides have significantly different magnetic properties. Thin film bilayers were deposited using a dual ion-beam deposition technique that produced an antiferromagnetic iron-oxide layer composition that ranged from Fe<sub>3</sub>O<sub>4</sub> to ...
Proceedings of the Fifteenth Annual Northeast Bioengineering Conference, 1989
Summary form only given. A pacemaker-cardiovascular system sets a reference venous oxygen saturation level as the input and cardiovascular venous oxygen saturation as the output. The error drives the pacemaker with gain to regulate the heart rate. Cardiac output is obtained as a function of heart rate and the work load (using the Frank-Starling mechanism). The oxygen supplied by the ...
Conference Record of the 1988 IEEE International Symposium on Electrical Insulation, 1988
Synchrotron radiation (SR) vacuum lithography was carried out using plasma chemical processes. Plasma-polymerized and -copolymerized polymethyl methacrylate (PMMA) resists were irradiated by SR directly, and the film thickness was reduced due to the random decomposition of the polymer. Self- development was enhanced by incorporation of Sn, S, F and I as sensitizers into plasma-polymerized while it was restrained by incorporation ...
In this paper, the potential for new device materials and insight into the effects of some of the different iron oxide forms on exchange bias with NiFe (Permalloy) was discussed. The iron-oxides have significantly different magnetic properties. Thin film bilayers were deposited using a dual ion-beam deposition technique that produced an antiferromagnetic iron-oxide layer composition that ranged from Fe<sub>3</sub>O<sub>4</sub> to Fe<sub>2</sub>O<sub>3</sub>. The crystal structures of the Fe-oxide films were characterized by X-ray diffractometry (XRD). A JEOL (JEM-2010) Transmission electron microscope (TEM) operating at 200 kV was used for microstructural analysis. The magnetic properties such as exchange coupling and magnetic hysteresis of these bilayers were characterized using a vibrating sample magnetometer (VSM) and a superconducting quantum interference device (SQUID) magnetometry.
Summary form only given. A pacemaker-cardiovascular system sets a reference venous oxygen saturation level as the input and cardiovascular venous oxygen saturation as the output. The error drives the pacemaker with gain to regulate the heart rate. Cardiac output is obtained as a function of heart rate and the work load (using the Frank-Starling mechanism). The oxygen supplied by the blood is consumed due to normal activity and performance of the work load. The net oxygen saturation in the venous blood gives the system output. In the forward-loop of the model, the term (1/cardiac output) was linearized using a Taylor-series expansion, about the steady-state level. An average time delay (=82.5/cardiac output) was also calculated on the basis of the steady-state heart rate. The closed-loop pole locations can be obtained from the open-loop transfer function using the root-locus technique. A root locus program which allows for a time delay in the forward loop was used to plot the closed-loop pole locations of the linearized pacemaker-cardiovascular system as a function of controller gain.<<ETX>>
Synchrotron radiation (SR) vacuum lithography was carried out using plasma chemical processes. Plasma-polymerized and -copolymerized polymethyl methacrylate (PMMA) resists were irradiated by SR directly, and the film thickness was reduced due to the random decomposition of the polymer. Self- development was enhanced by incorporation of Sn, S, F and I as sensitizers into plasma-polymerized while it was restrained by incorporation of styrene. The thickness reduction was completely saturated at a high dose for all plasma-polymerized resists. Oxygen plasma etching enhanced the positive tone pattern on the resist following SR irradiation doses below the saturation level. Surface treatment of plasma-polymerized FBM using W(CO)/sub 6/ as a monomer gas was also found to enhance differential thickness.<<ETX>>
In order to reduce emissions and improve performance of internal combustion engines, it is desirable to know the oxygen concentration of the gas inducted into the engine so that the appropriate amount of fuel can be injected. This is especially true for diesel engines in which up to 50% of the exhaust gas is recirculated back into the engine. This work presents an estimation algorithm for the oxygen concentration in the intake manifold of a turbocharged diesel engine. The only quantities needed for the estimation scheme are boost pressure, fueling rate, engine speed and EGR valve lift, all of which are generally known to the engine control unit. This estimator is a first order linear dynamic model (with time varying coefficients) and asymptotically stable. Due to the unobservability of the oxygen concentration model, the speed of convergence of the estimation scheme is fixed by engine parameters, but is as fast as the phenomenon of mixing of the exhaust gas recirculated with the air in the intake manifold. Simulation studies show the effectiveness of the proposed estimator.
We measured the density of the trap states at the interface of SIMOX (Separation by Implanted Oxygen) wafers by high frequency C-V measurements of MOS diodes fabricated on SIMOX wafers. SIMOX structures with p-type or n-type silicon substrates are found to have traps of about 10/sup 12/ cm/sup -2/ eV/sup -1/ at the back interface. We tried to estimate the density of the trap states at the front interface, too.
Control of oxygen precipitation is important for increasing the yield in ULSI- processing. In the present work, computer modeling is used to investigate the formation of oxygen precipitates during double-step (LO-HI) and multi-step CMOS-type thermal anneals. The calculations agree well with a large number of experimental results. The proposed model is used to investigate the influence of processing parameters such as initial oxygen content, annealing temperature and time, and the thermal history of wafers on the amount of precipitation observed. The model is also used to determine 2-step and 3-step substitutional anneals showing precipitation behavior similar to that of a multi-step CMOS- type anneal. It is concluded that application of the computer model offers the potential of reducing both time and costs for the development of shorter substitutional thermal processes, which are necessary for routine testing of the precipitation behavior of wafers used in multi-step device processing.<<ETX>>
The influence of oxygen in ambient gas during liquid-phase epitaxial growth on a double-heterostructure (DH) wafer is investigated. The oxygen incorporated into grown layers seems to be associated with the formation of crystal defects such as so-called dark-spot defects (DSD's) and saucer pits. When the oxygen concentration is reduced less than 0.03 ppm, crystal defects such as DSD's and saucer pits drastically decrease in the epitaxial layers. Al added into Ga solutions behaves as the getter of the oxygen in the Ga solutions and prevents the formation of DSD's in the active layers. The correlation between DSD's and etch pits is examined. All of the dislocations do not always contribute to the formation of DSD's. The formation of DSD's depends on oxygen concentration in the ambient hydrogen gas. In DH lasers fabricated from DH wafers grown under the extremely low oxygen concentration, the operating life at room temperature exceeds 10 000 h at the present time.
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