Conferences related to Organic semiconductors

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Organic semiconductors

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Organic semiconductors

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Xplore Articles related to Organic semiconductors

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Performance analysis of different novel organic thin film transistor structures

2016 International Conference on Computing, Communication and Automation (ICCCA), 2016

All organic devices are basically fabricated with the existing structures of organic thin film Transistors (OTFTs). This paper introduces three novel structures that have shown better performance in terms of drain current (ID), mobility (μ) and threshold voltage (Vth) with respect to the existing structures such as bottom gate bottom contact (BGBC) and bottom gate top contact (BGTC). The three ...


Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

2007 International Workshop on Physics of Semiconductor Devices, 2007

Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate ...


Wide bandgap HBT on crystalline silicon using electron-blocking PEDOT:PSS emitter

71st Device Research Conference, 2013

Heterojunction bipolar transistors in silicon using a narrow band gap base (e.g. Si/SiGe/Si) are well known and have been in production for many years. However a wide bandgap emitter on silicon has proved elusive (Fig 1(a)). Recently it has been shown that heterojunctions between crystalline silicon and organic semiconductors such as PEDOT or P3HT can block electrons from entering the ...


Innovative electronic biosensors based on organic thin film transistors

SENSORS, 2011 IEEE, 2011

To satisfy the demand for fast and smart analytical systems a great interest has been focused on the study and development of novel bio-sensing devices. Electronic transduction can open new perspectives for point-of-care diagnosis actuated by fast, sensitive, selective and reliable biosensors. Recently our group demonstrated the feasibility of the coupling of a biological recognition element to an organic field-effect ...


Permanent all-optical poling of octupolar molecules

Conference on Lasers and Electro-Optics Europe, 1994

None


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Educational Resources on Organic semiconductors

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IEEE-USA E-Books

  • Performance analysis of different novel organic thin film transistor structures

    All organic devices are basically fabricated with the existing structures of organic thin film Transistors (OTFTs). This paper introduces three novel structures that have shown better performance in terms of drain current (ID), mobility (μ) and threshold voltage (Vth) with respect to the existing structures such as bottom gate bottom contact (BGBC) and bottom gate top contact (BGTC). The three novel structures namely, bottom source top drain (BSTD), top source bottom drain (TSBD) and asymmetric structure are analyzed using Atlas 2-D numerical device simulator. These structures are fully organic TFT as they are simulated on the basis of a fabricated device with source, drain and gate electrode of material PEDOT: PSS (poly(ethylene-dioxythiophene) /polystyrene sulphonate), insulator of PET (Poly ethylene-therephthalate) and organic semiconductor layer of pentacene. Among all the novel structure proposed, the asymmetric structure (with source and drain of different dimensions) showed the highest drive current (ID) and smallest threshold voltage (Vth).

  • Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

    Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.

  • Wide bandgap HBT on crystalline silicon using electron-blocking PEDOT:PSS emitter

    Heterojunction bipolar transistors in silicon using a narrow band gap base (e.g. Si/SiGe/Si) are well known and have been in production for many years. However a wide bandgap emitter on silicon has proved elusive (Fig 1(a)). Recently it has been shown that heterojunctions between crystalline silicon and organic semiconductors such as PEDOT or P3HT can block electrons from entering the organic [1, 2]. In this work we used the Si/PEDOT heterojunction to demonstrate a HBT with an organic semiconductor wide bandgap emitter, and a crystalline silicon base.

  • Innovative electronic biosensors based on organic thin film transistors

    To satisfy the demand for fast and smart analytical systems a great interest has been focused on the study and development of novel bio-sensing devices. Electronic transduction can open new perspectives for point-of-care diagnosis actuated by fast, sensitive, selective and reliable biosensors. Recently our group demonstrated the feasibility of the coupling of a biological recognition element to an organic field-effect device [3, 4]. As a further step, investigations on different deposition techniques have been developed, to improve the adhesion and the homogeneity of the biological element onto the organic semiconductor.

  • Permanent all-optical poling of octupolar molecules

    None

  • A 3-V, 6-bit C-2C digital-to-analog converter using complementary organic thin-film transistors on glass

    A 3-V, 6-bit DAC is designed using complementary organic thin-film transistors on a glass substrate. The p-channel and n-channel transistors utilize dinaphtho-thieno-thiophene (DNTT) and hexadecafluorocopperphthalocyanine (F<sub>16</sub>CuPc) as the organic semiconductors, respectively. A low- temperature process compatible with flexible plastic substrates is used to fabricate the circuit. The DAC utilizes switched-capacitors to circumvent the large transistor variations, and a C-2C structure to avoid the very large capacitances that would otherwise be required in the thin-film process. With calibration, the DAC achieves DNL and INL of less than +/- 1 LSB at a conversion rate of 100 Hz.

  • Nanoimprinted organic distributed feedback lasers under pulsed and quasi-CW optical pumping

    We have previously demonstrated organic semiconductor lasers with low lasing thresholds (P/sub th/=0.2 /spl mu/J/cm/sup 2/). The devices consist of an organic double-heterostructure waveguide with a distributed optical feedback provided by a 1/sup st/ order optical grating (200 nm period) fabricated by nanoimprinting. In this paper we report induced absorption effects found in the study of single layer distributed feedback (DFB) organic lasers under pulsed and quasi-CW optical excitations. These results agree qualitatively with our study of electrically pumped structures and have direct implications on development of diode lasers based on thin films of organic semiconductors.

  • Charge-based Mobility Modeling for Organic Semiconductors

    Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).

  • Organic CuTCNQ nonvolatile memories for integration in the CMOS backend-of-line: preparation from gas/solid reaction and downscaling to an area of 0.25 /spl mu/m/sup 2/

    CuTCNQ is an organic semiconductor charge transfer material that allows the realization of nonvolatile cross-bar memory arrays with conductivity switching. In this work, we present a simple preparation method of this organic memory material, compatible with industrial processing and downsizing of the memory cells. CuTCNQ was prepared on Cu by a solid-gas phase corrosion reaction between the metal and hot TCNQ gas at low pressure. Surface coverage increased with reaction time and temperature. Cu/CuTCNQ/Al cross-point cell arrays with memory areas of 0.01 mm/sup 2/ exhibited I-V curved with ON/OFF current ratios of about 10. Further downscaling of the memory elements was successful to an area of 0.25 /spl mu/m/sup 2/ . Corresponding memories achieved ON/OFF current ratio of about 700. This is, to our knowledge, the first report on downscaling of organic memories to 0.25 /spl mu/m/sup 2/.

  • Printing organic thin-film transistor technology

    Si thin-film transistor (a-Si TFT and LTPS-TFT) and organic thin film transistor (OTFT) based on conjugated organic semiconductor have become attractive for use in flat panel display, smart cards, RFID tags and large area sensors. An organic thin-film transistor (OTFT) can be formed on plastic substrate due to its low process temperature, <150/spl deg/C. Therefore, the manufacturing cost of OTFT is lower than Si TFT because the printing process can be employed. While OTFT is applied to flexible display and electronic components, the electrical properties of OTFT such as the saturation current, the off current, the threshold voltage, and the mobility are affected by deposition of organic semiconductor, processes and environment. Therefore, the phenomenon of OTFT under different condition has to be identified.



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