IEEE Organizations related to Magnetic domain walls

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Conferences related to Magnetic domain walls

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems



Periodicals related to Magnetic domain walls

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Energy Conversion, IEEE Transaction on

Research, development, design, application, construction, installation, and operation of electric power generating facilities (along with their conventional, nuclear, or renewable sources) for the safe, reliable, and economic generation of electrical energy for general industrial, commercial, public, and domestic consumption, and electromechanical energy conversion for the use of electrical energy



Most published Xplore authors for Magnetic domain walls

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Xplore Articles related to Magnetic domain walls

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The application of domain wall motion to storage devices

1961 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1961

None


A magnetic film analog-to-binary encoder

1963 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1963

None


One-dimensional domain wall motion with an in-plane field applied at an arbitrary angle

IEEE Transactions on Magnetics, 1990

The authors use a previously developed general procedure for calculating the configuration and stability limits of a steadily translating lossless one- dimensional domain wall in the case of orthorhombic anisotropy with a field applied perpendicular to the easy axis at arbitrary angle. The regions where the three previously identified breakdown mechanisms occur in this more general case are mapped. A ...


High Frequency Magnetic Field Sensors Based On The Faraday Effect In Garnet Thick Films

8th Optical Fiber Sensors Conference, 1992

None


Dynamics of topological spin structures

2015 IEEE International Magnetics Conference (INTERMAG), 2015

Topological spin structures that emerge from the Dzyaloshinskii-Moriya interaction (DMI), such as chiral domain walls and skyrmions have become the focus of intense investigations due to exciting physics and possible applications [1] . We showed for chiral domain walls (DWs) (where a symmetry - breaking interaction, such as the DMI leads to a unique chirality) that multiple DWs can be ...



Educational Resources on Magnetic domain walls

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IEEE-USA E-Books

  • The application of domain wall motion to storage devices

    None

  • A magnetic film analog-to-binary encoder

    None

  • One-dimensional domain wall motion with an in-plane field applied at an arbitrary angle

    The authors use a previously developed general procedure for calculating the configuration and stability limits of a steadily translating lossless one- dimensional domain wall in the case of orthorhombic anisotropy with a field applied perpendicular to the easy axis at arbitrary angle. The regions where the three previously identified breakdown mechanisms occur in this more general case are mapped. A scaling procedure obtained from a refined analysis improves the solution accuracy in those cases in which a transition from a stable to an unstable orientation appears in regions far from the wall center.<<ETX>>

  • High Frequency Magnetic Field Sensors Based On The Faraday Effect In Garnet Thick Films

    None

  • Dynamics of topological spin structures

    Topological spin structures that emerge from the Dzyaloshinskii-Moriya interaction (DMI), such as chiral domain walls and skyrmions have become the focus of intense investigations due to exciting physics and possible applications [1] . We showed for chiral domain walls (DWs) (where a symmetry - breaking interaction, such as the DMI leads to a unique chirality) that multiple DWs can be efficiently displaced synchronously using special field geometries [2] . This overcomes the commonly assumed limitation that magnetic fields cannot be used to move adjacent DWs synchronously and paves the way for new device ideas such as smart cards with non-contact writing .

  • Investigation of the magnetic aftereffects in Ti-doped YIG

    The magnetic aftereffects (MAEs) phenomena in titanium-doped yttrium iron garnets (Ti-YIG) (Y/sub 3/Fe/sub 5-x/Ti/sub x/O/sub 12/) (0 /spl les/ x /spl les/ 0.2) prepared by a standard ceramic method and sintered up to 1420/spl deg/C in air and CO/sub 2/ atmospheres were demonstrated in this study. The results were interpreted with the aid of defect content data from thermogravimetric measurements. It was observed defect parameter increases with increasing x and a reducing atmosphere is much more effective for increasing the amount of defects. It was also suggested through thermogravimetric and magnetic disaccommodation measurements that only oxygen vacancies and ferrous cations were present in Ti-doped YIG.

  • Novel STT-MTJ Device Enabling All-Metallic Logic Circuits

    Spintronics is an emerging platform for logic circuit design. Though many approaches have been proposed, and several have met with some success, a number of challenges remain. Here, we introduce a new style of magnetic logic- mLogic-enabled by a novel four-terminal device. An input current pulse to the device switches the magnetic state by spin transfer torque-driven domain wall motion, which programs the resistance state of a magnetic tunnel junction in an electrically-insulated but magnetically-coupled path. Despite the low switching ratios of the devices, limited by the tunnel magnetoresistance ratio, logic circuits independent of CMOS may be configured using current- based signaling. Micromagnetic analysis of device performance and the concepts of mLogic circuit design are introduced, with SPICE simulation of logic gates demonstrating correct logic operation at supplies below 100 mV.

  • Spin-valve RAM cell

    This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.

  • Hysteresis Loop Areas in Kinetic Ising Models: Effects of the Switching Mechanism

    None

  • Domain wall pinning in the hard permanent magnet Sm<inf>2</inf>Co<inf>10</inf>Cu<inf>1.48</inf>Fe<inf>3.16</inf>Zr<inf>0.194</inf>

    We have considered the ferromagnetic domain wall pinning caused by a planar type defect characterized by a change in the magnitude of the exchange constant and the uniaxial magnetic anisotropy and in the angular deviation of the magnetic anisotropy axis. Our model is appropriate for bulk material when the magnitude of the radius of curvature of the defect is not large compared to the width of the domain wall. Expressions are obtained and graphed for the coercive force due to such pinning. It is shown that the angular mismatch between the defect and the host material breaks the degeneracy between clockwise and counterclockwise rotating Bloch walls. Further, the results are applied to the Japanese commercial TDK material, Sm2Co10Cu1.48Fe3.16Zr0.194, which shows a fine cellular structure of approximately 500 A scale.



Standards related to Magnetic domain walls

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No standards are currently tagged "Magnetic domain walls"